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CPC1025NTR CPC1025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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CPC1019NTR CPC1019NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
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CPC1006NTR CPC1006NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Relay variant: 1-phase; current source
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CPC1010N CPC1010N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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CPC1004NTR CPC1004NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56 Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Relay variant: current source
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CPC1010NTR CPC1010NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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CPC1016NTR CPC1016NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Relay variant: 1-phase; current source
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IXA12IF1200HB IXA12IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
auf Bestellung 261 Stücke:
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13+5.75 EUR
16+4.73 EUR
30+4.06 EUR
120+3.58 EUR
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IXA37IF1200HJ IXA37IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
auf Bestellung 52 Stücke:
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3+25.48 EUR
10+22.52 EUR
30+20.21 EUR
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
auf Bestellung 49 Stücke:
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10+7.64 EUR
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DHG10I1200PA DHG10I1200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Power dissipation: 85W
Case: TO220AC
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.23V
Load current: 10A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: Sonic FRD™
Type of diode: rectifying
auf Bestellung 158 Stücke:
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27+2.67 EUR
35+2.06 EUR
41+1.74 EUR
45+1.62 EUR
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IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Case: PLUS264™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±20V
Drain current: 300A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.5kW
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
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1+71.5 EUR
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VMM300-03F IXYS VMM300-03F.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Polarisation: unipolar
Technology: HiPerFET™
Drain-source voltage: 300V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 220A
Pulsed drain current: 1.16kA
On-state resistance: 7.4mΩ
Power dissipation: 1.5kW
Electrical mounting: FASTON connectors; screw
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IXFN300N10P IXFN300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF6281B2EE41820&compId=IXFN300N10P.pdf?ci_sign=698fb9a6d5df3e5793ba0cfa72c193b24b0e5395 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 295A
Pulsed drain current: 900A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.07kW
Electrical mounting: screw
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IXFN300N20X3 IXFN300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A8B7B874BD8BF&compId=IXFN300N20X3.pdf?ci_sign=21884cf5f5cecb1983c221f0ce87390a4ae6f23e pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 700A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
On-state resistance: 3.5mΩ
Power dissipation: 695W
Electrical mounting: screw
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CLA60PD1200NA CLA60PD1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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CLA110MB1200NA CLA110MB1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269 Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
auf Bestellung 71 Stücke:
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3+26.4 EUR
5+24.17 EUR
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IXGN200N60B3 IXGN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
auf Bestellung 39 Stücke:
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2+61.78 EUR
3+56.54 EUR
Mindestbestellmenge: 2
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DSEP2X91-03A DSEP2X91-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5B97D60E15FAA50&compId=DSEP2X91-03A-DTE.pdf?ci_sign=2598ba83b247f01b3d7354586c51ea5939025420 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 90A
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 77 Stücke:
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2+41.54 EUR
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DSEP2X61-03A DSEP2X61-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 69 Stücke:
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3+33.79 EUR
Mindestbestellmenge: 3
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DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 56 Stücke:
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2+50.84 EUR
3+45.3 EUR
9+44.66 EUR
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DSS2X121-0045B DSS2X121-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449 description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 17 Stücke:
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2+42.41 EUR
3+37.49 EUR
10+33.72 EUR
Mindestbestellmenge: 2
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MCO150-16IO1 MCO150-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXDD630MYI IXDD630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
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IXDD630MCI IXDD630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
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IXTQ470P2 IXTQ470P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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CS45-12IO1 CS45-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.45 EUR
13+5.85 EUR
14+5.16 EUR
30+4.75 EUR
Mindestbestellmenge: 10
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IXTX102N65X2 IXTX102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTP48P05T IXTP48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.78 EUR
20+3.68 EUR
50+3.12 EUR
100+3.02 EUR
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IXTP44N10T IXTP44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.37 EUR
39+1.84 EUR
52+1.4 EUR
100+1.26 EUR
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IXTY44N10T IXTY44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
29+2.47 EUR
36+2 EUR
70+1.73 EUR
Mindestbestellmenge: 26
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IXTY48P05T IXTY48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTA48P05T IXTA48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTK120P20T IXTK120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTK102N65X2 IXTK102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTN120P20T IXTN120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
Produkt ist nicht verfügbar
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DAA200X1800NA DAA200X1800NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03 Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.41 EUR
3+41.03 EUR
10+38.25 EUR
30+37.25 EUR
Mindestbestellmenge: 2
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CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
32+2.27 EUR
36+2.02 EUR
50+1.83 EUR
Mindestbestellmenge: 29
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MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
auf Bestellung 4 Stücke:
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2+46.85 EUR
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LAA110 LAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.09 EUR
16+4.6 EUR
17+4.26 EUR
30+4.06 EUR
Mindestbestellmenge: 15
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LAA110PL LAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.06 EUR
17+4.46 EUR
100+4.1 EUR
Mindestbestellmenge: 15
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LAA110S LAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.32 EUR
50+5.33 EUR
100+5.06 EUR
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PAA110LS PAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.66 EUR
50+6.25 EUR
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PAA110PL PAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.66 EUR
12+6.25 EUR
Mindestbestellmenge: 10
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PAA110S PAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.04 EUR
11+6.79 EUR
50+6.15 EUR
Mindestbestellmenge: 9
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PAA110 PAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.68 EUR
Mindestbestellmenge: 10
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PAA110L PAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
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LAA110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110L LAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LS LAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
Produkt ist nicht verfügbar
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CPC1025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db
CPC1025NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1019NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
Produkt ist nicht verfügbar
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CPC1006NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419
CPC1006NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1010N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1004NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56
CPC1004NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Relay variant: current source
Produkt ist nicht verfügbar
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CPC1010NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1016NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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IXA12IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378
IXA12IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
16+4.73 EUR
30+4.06 EUR
120+3.58 EUR
Mindestbestellmenge: 13
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IXA37IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55
IXA37IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.48 EUR
10+22.52 EUR
30+20.21 EUR
Mindestbestellmenge: 3
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IXA30RG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.64 EUR
Mindestbestellmenge: 10
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DHG10I1200PA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84
DHG10I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Power dissipation: 85W
Case: TO220AC
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.23V
Load current: 10A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: Sonic FRD™
Type of diode: rectifying
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
35+2.06 EUR
41+1.74 EUR
45+1.62 EUR
Mindestbestellmenge: 27
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IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Case: PLUS264™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±20V
Drain current: 300A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.5kW
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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VMM300-03F VMM300-03F.pdf
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Polarisation: unipolar
Technology: HiPerFET™
Drain-source voltage: 300V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 220A
Pulsed drain current: 1.16kA
On-state resistance: 7.4mΩ
Power dissipation: 1.5kW
Electrical mounting: FASTON connectors; screw
Produkt ist nicht verfügbar
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IXFN300N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF6281B2EE41820&compId=IXFN300N10P.pdf?ci_sign=698fb9a6d5df3e5793ba0cfa72c193b24b0e5395
IXFN300N10P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 295A
Pulsed drain current: 900A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.07kW
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXFN300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A8B7B874BD8BF&compId=IXFN300N20X3.pdf?ci_sign=21884cf5f5cecb1983c221f0ce87390a4ae6f23e pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFN300N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 700A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
On-state resistance: 3.5mΩ
Power dissipation: 695W
Electrical mounting: screw
Produkt ist nicht verfügbar
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CLA60PD1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CLA110MB1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.4 EUR
5+24.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXGN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+61.78 EUR
3+56.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DSEP2X91-03A description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5B97D60E15FAA50&compId=DSEP2X91-03A-DTE.pdf?ci_sign=2598ba83b247f01b3d7354586c51ea5939025420
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 90A
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DSEP2X61-03A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484
DSEP2X61-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.79 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+50.84 EUR
3+45.3 EUR
9+44.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DSS2X121-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449
DSS2X121-0045B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.41 EUR
3+37.49 EUR
10+33.72 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCO150-16IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775
MCO150-16IO1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXDD630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630MCI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ470P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b
IXTQ470P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CS45-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0
CS45-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.45 EUR
13+5.85 EUR
14+5.16 EUR
30+4.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTX102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTX102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTP48P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
20+3.68 EUR
50+3.12 EUR
100+3.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTP44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTP44N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
39+1.84 EUR
52+1.4 EUR
100+1.26 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IXTY44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
29+2.47 EUR
36+2 EUR
70+1.73 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IXTY48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTY48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTA48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTK120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTK102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN120P20T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2
IXTN120P20T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DAA200X1800NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03
DAA200X1800NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.41 EUR
3+41.03 EUR
10+38.25 EUR
30+37.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CLA15E1200NPZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac
CLA15E1200NPZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
32+2.27 EUR
36+2.02 EUR
50+1.83 EUR
Mindestbestellmenge: 29
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MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.85 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
LAA110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.09 EUR
16+4.6 EUR
17+4.26 EUR
30+4.06 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
17+4.46 EUR
100+4.1 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LAA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.32 EUR
50+5.33 EUR
100+5.06 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.66 EUR
50+6.25 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.66 EUR
12+6.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PAA110S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
11+6.79 EUR
50+6.15 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PAA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.68 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
Produkt ist nicht verfügbar
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IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
Produkt ist nicht verfügbar
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