Produkte > IXYS > Alle Produkte des Herstellers IXYS (16162) > Seite 269 nach 270

Wählen Sie Seite:   [  << Vorherige Seite ]  1 27 54 81 108 135 162 189 216 243 264 265 266 267 268 269 270  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFB132N50P3 IXFB132N50P3 IXYS IXFB132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFL132N50P3 IXFL132N50P3 IXYS IXFL132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY01N100 IXTY01N100 IXYS IXTU(Y)01N100.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
35+2.06 EUR
39+1.86 EUR
70+1.82 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P20T IXTP32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.52 EUR
10+7.75 EUR
11+7.02 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P05T IXTP32P05T IXYS IXT_32P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFP30N25X3M IXFP30N25X3M IXYS IXFP30N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA30N25X3 IXFA30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH1N450HV IXTH1N450HV IXYS IXTH(T)1N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.14 EUR
5+43.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCMA110P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF2103NTR LF2103NTR IXYS LF2103NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1563G CPC1563G IXYS CPC1563.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.35 EUR
50+3.5 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DSB20C60PN DSB20C60PN IXYS DSB20C60PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 30W
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
143+0.5 EUR
147+0.49 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
DSA20C60PN DSA20C60PN IXYS DSA20C60PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
65+1.1 EUR
73+0.99 EUR
81+0.89 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IXTP24P085T IXTP24P085T IXYS IXT_24P085T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA710 LAA710 IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.2 EUR
10+12.61 EUR
50+10.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
LBA716 LBA716 IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.32 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PLB150S PLB150S IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Manufacturer series: OptoMOS
Case: DIP6
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 2.5ms
On-state resistance: 7Ω
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.67 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXEL40N400 IXEL40N400 IXYS IXEL40N400.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 4kV
Collector current: 40A
Power dissipation: 380W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Turn-on time: 260ns
Turn-off time: 1.17µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD200-16IO1 MCD200-16IO1 IXYS MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Max. forward voltage: 1.2V
Threshold on-voltage: 0.8V
Load current: 216A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 8kA
Max. load current: 340A
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD200-14io1 IXYS MCD200-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 216A; Y4-M6; Ufmax: 1.1V; Ifsm: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Max. forward voltage: 1.1V
Threshold on-voltage: 0.8V
Load current: 216A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Max. load current: 340A
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD200-18io1 IXYS MCD200-18io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Max. forward voltage: 1.2V
Threshold on-voltage: 0.8V
Load current: 216A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8kA
Max. load current: 340A
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLA143S PLA143S IXYS PLA143.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
18+4.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PLA143 PLA143 IXYS PLA143.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN80N30L2 IXTN80N30L2 IXYS IXTN80N30L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 38mΩ
Pulsed drain current: 200A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 660nC
Reverse recovery time: 485ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH50N90B2D1 IXGH50N90B2D1 IXYS IXG_50N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: GenX3™; HiPerFAST™; PT
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.09 EUR
6+13.24 EUR
10+12.11 EUR
30+10.48 EUR
120+9.6 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXGH50N90B2 IXGH50N90B2 IXYS IXGH(T)50N90B2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: HiPerFAST™; XPT™
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.3 EUR
8+9.27 EUR
10+8.18 EUR
30+7.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXYH50N120C3D1 IXYH50N120C3D1 IXYS IXYH50N120C3d1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 96ns
Turn-off time: 0.22µs
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.44 EUR
6+14.29 EUR
10+13.64 EUR
30+12.23 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 200V
Drain current: 60A
Reverse recovery time: 330ns
Gate charge: 255nC
On-state resistance: 45mΩ
Power dissipation: 540W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH260N055T2 IXTH260N055T2 IXYS IXTH260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 260A
Reverse recovery time: 60ns
Gate charge: 0.14µC
On-state resistance: 3.3mΩ
Power dissipation: 480W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH360N055T2 IXTH360N055T2 IXYS IXTH(T)360N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 360A
Reverse recovery time: 78ns
Gate charge: 330nC
On-state resistance: 2.4mΩ
Power dissipation: 935W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P60 IXTH10P60 IXYS IXT_10P60.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -10A
Reverse recovery time: 0.5µs
Gate charge: 135nC
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH16P60P IXTH16P60P IXYS IXT_16P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -16A
Reverse recovery time: 440ns
Gate charge: 92nC
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26N60P IXTH26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 26A
Reverse recovery time: 0.5µs
Gate charge: 72nC
On-state resistance: 0.27Ω
Power dissipation: 460W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N50P3 IXFH60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.32 EUR
9+8.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTN60N50L2 IXTN60N50L2 IXYS IXTN60N50L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK60N50L2 IXTK60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ60N50P3 IXFQ60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N50P3 IXFT60N50P3 IXYS IXF_60N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1977J CPC1977J IXYS CPC1977.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXCP10M45S IXCP10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH6N50D2 IXTH6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.8 EUR
10+9.77 EUR
30+9.14 EUR
120+8.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP6N50D2 IXTP6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.91 EUR
10+8.14 EUR
50+6.52 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTA6N50D2 IXTA6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.54 EUR
10+8.65 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC3982TTR CPC3982TTR IXYS CPC3982.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
128+0.56 EUR
178+0.4 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708CTR CPC3708CTR IXYS CPC3708.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
122+0.59 EUR
143+0.5 EUR
500+0.47 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
CPC5603CTR CPC5603CTR IXYS CPC5603.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
104+0.69 EUR
123+0.58 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
82+0.88 EUR
107+0.67 EUR
120+0.6 EUR
250+0.51 EUR
500+0.49 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
CPC3701CTR CPC3701CTR IXYS CPC3701.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
96+0.75 EUR
133+0.54 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
CPC5602CTR CPC5602CTR IXYS CPC5602.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
90+0.8 EUR
115+0.63 EUR
126+0.57 EUR
250+0.5 EUR
500+0.47 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
CPC3902ZTR CPC3902ZTR IXYS CPC3902.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
88+0.82 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708ZTR CPC3708ZTR IXYS CPC3708.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
83+0.86 EUR
107+0.67 EUR
500+0.55 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
CPC3720CTR CPC3720CTR IXYS CPC3720.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
124+0.58 EUR
136+0.53 EUR
154+0.47 EUR
250+0.43 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
CPC3730CTR CPC3730CTR IXYS CPC3730.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXTP3N50D2 IXTP3N50D2 IXYS IXTA(P)3N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
22+3.3 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IXTH50P10 IXTH50P10 IXYS IXT_50P10.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.21 EUR
10+11.27 EUR
30+10.57 EUR
120+9.7 EUR
270+9.24 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFB132N50P3 IXFB132N50P3.pdf
IXFB132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFL132N50P3 IXFL132N50P3.pdf
IXFL132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY01N100 IXTU(Y)01N100.pdf
IXTY01N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
35+2.06 EUR
39+1.86 EUR
70+1.82 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P20T IXT_32P20T.pdf
IXTP32P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
10+7.75 EUR
11+7.02 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P05T IXT_32P05T.pdf
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFP30N25X3M IXFP30N25X3M.pdf
IXFP30N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA30N25X3 IXFA(P,Y)30N25X3.pdf
IXFA30N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH1N450HV IXTH(T)1N450HV.pdf
IXTH1N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.14 EUR
5+43.6 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCMA110P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170A IXG_10N170A.pdf
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH10N170 IXGH(t)10N170.pdf
IXGH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LF2103NTR LF2103NTR.pdf
LF2103NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1563G CPC1563.pdf
CPC1563G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
50+3.5 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DSB20C60PN DSB20C60PN.pdf
DSB20C60PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 30W
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
143+0.5 EUR
147+0.49 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
DSA20C60PN DSA20C60PN.pdf
DSA20C60PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
65+1.1 EUR
73+0.99 EUR
81+0.89 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IXTP24P085T IXT_24P085T.pdf
IXTP24P085T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LAA710 LAA710.pdf
LAA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
Kind of output: MOSFET
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.2 EUR
10+12.61 EUR
50+10.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
LBA716 LBA716.pdf
LBA716
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Case: DIP8
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.32 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PLB150S PLB150.pdf
PLB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Manufacturer series: OptoMOS
Case: DIP6
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 2.5ms
On-state resistance: 7Ω
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.67 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXEL40N400 IXEL40N400.pdf
IXEL40N400
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 4kV
Collector current: 40A
Power dissipation: 380W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Turn-on time: 260ns
Turn-off time: 1.17µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD200-16IO1 MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD200-16IO1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Max. forward voltage: 1.2V
Threshold on-voltage: 0.8V
Load current: 216A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 8kA
Max. load current: 340A
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD200-14io1 MCD200-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 216A; Y4-M6; Ufmax: 1.1V; Ifsm: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Max. forward voltage: 1.1V
Threshold on-voltage: 0.8V
Load current: 216A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Max. load current: 340A
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD200-18io1 MCD200-18io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Max. forward voltage: 1.2V
Threshold on-voltage: 0.8V
Load current: 216A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8kA
Max. load current: 340A
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PLA143S PLA143.pdf
PLA143S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
18+4.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PLA143 PLA143.pdf
PLA143
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN80N30L2 IXTN80N30L2.pdf
IXTN80N30L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 38mΩ
Pulsed drain current: 200A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 660nC
Reverse recovery time: 485ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGH50N90B2D1 IXG_50N90B2D1.pdf
IXGH50N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: GenX3™; HiPerFAST™; PT
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.09 EUR
6+13.24 EUR
10+12.11 EUR
30+10.48 EUR
120+9.6 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXGH50N90B2 IXGH(T)50N90B2.pdf
IXGH50N90B2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: HiPerFAST™; XPT™
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.3 EUR
8+9.27 EUR
10+8.18 EUR
30+7.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXYH50N120C3D1 IXYH50N120C3d1.pdf
IXYH50N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 96ns
Turn-off time: 0.22µs
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.44 EUR
6+14.29 EUR
10+13.64 EUR
30+12.23 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 200V
Drain current: 60A
Reverse recovery time: 330ns
Gate charge: 255nC
On-state resistance: 45mΩ
Power dissipation: 540W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH260N055T2 IXTH260N055T2.pdf
IXTH260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 260A
Reverse recovery time: 60ns
Gate charge: 0.14µC
On-state resistance: 3.3mΩ
Power dissipation: 480W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH360N055T2 IXTH(T)360N055T2.pdf
IXTH360N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 55V
Drain current: 360A
Reverse recovery time: 78ns
Gate charge: 330nC
On-state resistance: 2.4mΩ
Power dissipation: 935W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH10P60 IXT_10P60.pdf
IXTH10P60
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -10A
Reverse recovery time: 0.5µs
Gate charge: 135nC
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH16P60P IXT_16P60P.pdf
IXTH16P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Mounting: THT
Drain-source voltage: -600V
Drain current: -16A
Reverse recovery time: 440ns
Gate charge: 92nC
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Kind of channel: enhancement
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 26A
Reverse recovery time: 0.5µs
Gate charge: 72nC
On-state resistance: 0.27Ω
Power dissipation: 460W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N50P3 IXF_60N50P3.pdf
IXFH60N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.32 EUR
9+8.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTN60N50L2 IXTN60N50L2.pdf
IXTN60N50L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTK60N50L2 IXTK(X)60N50L2.pdf
IXTK60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ60N50P3 IXF_60N50P3.pdf
IXFQ60N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT60N50P3 IXF_60N50P3.pdf
IXFT60N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1977J CPC1977.pdf
CPC1977J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA120X200LB-TRR
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXCP10M45S IXCP10M90S.pdf
IXCP10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH6N50D2 IXTA(H,P)6N50D2.pdf
IXTH6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.8 EUR
10+9.77 EUR
30+9.14 EUR
120+8.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP6N50D2 IXTA(H,P)6N50D2.pdf
IXTP6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.91 EUR
10+8.14 EUR
50+6.52 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTA6N50D2 IXTA(H,P)6N50D2.pdf
IXTA6N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.54 EUR
10+8.65 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC3982TTR CPC3982.pdf
CPC3982TTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
128+0.56 EUR
178+0.4 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708CTR CPC3708.pdf
CPC3708CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
122+0.59 EUR
143+0.5 EUR
500+0.47 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
CPC5603CTR CPC5603.pdf
CPC5603CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
104+0.69 EUR
123+0.58 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
CPC3703CTR CPC3703.pdf
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
82+0.88 EUR
107+0.67 EUR
120+0.6 EUR
250+0.51 EUR
500+0.49 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
CPC3701CTR CPC3701.pdf
CPC3701CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
96+0.75 EUR
133+0.54 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
CPC5602CTR CPC5602.pdf
CPC5602CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
90+0.8 EUR
115+0.63 EUR
126+0.57 EUR
250+0.5 EUR
500+0.47 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
CPC3902ZTR CPC3902.pdf
CPC3902ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
88+0.82 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708ZTR CPC3708.pdf
CPC3708ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
83+0.86 EUR
107+0.67 EUR
500+0.55 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
CPC3720CTR CPC3720.pdf
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
124+0.58 EUR
136+0.53 EUR
154+0.47 EUR
250+0.43 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
CPC3730CTR CPC3730.pdf
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXTP3N50D2 IXTA(P)3N50D2.pdf
IXTP3N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
22+3.3 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IXTH50P10 IXT_50P10.pdf
IXTH50P10
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.21 EUR
10+11.27 EUR
30+10.57 EUR
120+9.7 EUR
270+9.24 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 27 54 81 108 135 162 189 216 243 264 265 266 267 268 269 270  [ Nächste Seite >> ]