| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CPC3720CTR | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.4W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
auf Bestellung 317 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA10P50P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 414ns |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA96P085T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 55ns |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA32P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -32A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 26ns |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA36N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA52P10P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -52A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA28P065T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -28A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 45mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 31ns |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA2N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 800ns Features of semiconductor devices: standard power mosfet |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA4N70X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Power dissipation: 80W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA340N04T4-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 480W Case: TO263-7 On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 256nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 43ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA10P50P-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 10A; 300W; D2PAK Type of transistor: P-MOSFET Drain current: 10A Power dissipation: 300W Case: D2PAK Gate-source voltage: 20V On-state resistance: 1Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA1N170DHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO263HV On-state resistance: 16Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA1N200P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO263HV On-state resistance: 40Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA24P085T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -24A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: SMD Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA36P15P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA3N120HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263HV Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 700ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA06N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.6A Power dissipation: 42W Case: TO263 On-state resistance: 34Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN22N100L | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 22A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.6Ω Pulsed drain current: 50A Power dissipation: 700W Technology: Linear™ Kind of channel: enhancement Gate charge: 0.27µC Reverse recovery time: 1µs Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN62N50L | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 62A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.1Ω Pulsed drain current: 150A Power dissipation: 800W Technology: Linear™ Kind of channel: enhancement Gate charge: 550nC Reverse recovery time: 0.5µs Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN200N10L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 178A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 11mΩ Pulsed drain current: 500A Power dissipation: 830W Technology: Linear L2™ Kind of channel: enhancement Gate charge: 540nC Reverse recovery time: 245ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN17N120L | IXYS |
Category: Transistor modules Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.9Ω Pulsed drain current: 34A Power dissipation: 540W Technology: Linear™ Kind of channel: enhancement Gate charge: 155nC Reverse recovery time: 1.83µs Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN40P50P | IXYS |
Category: Transistor modules Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: -500V Drain current: -40A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.23Ω Pulsed drain current: -120A Power dissipation: 890W Technology: PolarP™ Kind of channel: enhancement Gate charge: 205nC Reverse recovery time: 477ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN240N075L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 75V Drain current: 225A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 7mΩ Pulsed drain current: 720A Power dissipation: 735W Technology: Linear L2™ Kind of channel: enhancement Gate charge: 546nC Reverse recovery time: 206ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN90N25L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 90A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 36mΩ Pulsed drain current: 360A Power dissipation: 735W Technology: Linear L2™ Kind of channel: enhancement Gate charge: 640nC Reverse recovery time: 266ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN170P10P | IXYS |
Category: Transistor modules Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: -100V Drain current: -170A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 14mΩ Pulsed drain current: -510A Power dissipation: 890W Technology: PolarP™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 176ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTN32P60P | IXYS |
Category: Transistor modules Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: -600V Drain current: -32A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.35Ω Pulsed drain current: -96A Power dissipation: 890W Technology: PolarP™ Kind of channel: enhancement Gate charge: 196nC Reverse recovery time: 480ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN550N055T2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 55V Drain current: 550A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 1.3mΩ Pulsed drain current: 1.65kA Power dissipation: 940W Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate charge: 595nC Reverse recovery time: 100ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN600N04T2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 40V Drain current: 600A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 1.3mΩ Pulsed drain current: 1.8kA Power dissipation: 940W Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate charge: 590nC Reverse recovery time: 100ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN200N10T | IXYS |
Category: Transistor modules Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 200A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.5mΩ Pulsed drain current: 500A Power dissipation: 550W Technology: TrenchMV™ Kind of channel: enhancement Gate charge: 152nC Reverse recovery time: 76ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTN400N15X4 | IXYS |
Category: Transistor modules Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw Type of semiconductor module: MOSFET transistor Drain-source voltage: 150V Drain current: 400A Case: SOT227B On-state resistance: 3.1mΩ Power dissipation: 1.1kW Technology: X4-Class Reverse recovery time: 175ns Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXTN400N20X4 | IXYS |
Category: Transistor modules Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw Type of semiconductor module: MOSFET transistor Drain-source voltage: 200V Drain current: 340A Case: SOT227B On-state resistance: 3mΩ Power dissipation: 830W Reverse recovery time: 270ns Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXTN5N250 | IXYS |
Category: Transistor modules Description: Module; 5A; SOT227B; 700W; 1.2us; screw Type of semiconductor module: MOSFET transistor Drain current: 5A Case: SOT227B Power dissipation: 700W Reverse recovery time: 1.2µs Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTN8N150L | IXYS |
Category: Transistor modules Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.5kV Drain current: 7.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 3.6Ω Pulsed drain current: 20A Power dissipation: 545W Technology: Linear™ Kind of channel: enhancement Gate charge: 250nC Reverse recovery time: 1.7µs Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTH102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns Type of transistor: N-MOSFET Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of channel: enhancement Reverse recovery time: 97ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IX4310TTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOT23-5 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...24V Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IX4310NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...24V Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DPG30C200PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V Max. off-state voltage: 200V Load current: 15A x2 Max. forward impulse current: 0.24kA Max. forward voltage: 1.51V Case: TO263AB Type of diode: rectifying Reverse recovery time: 35ns Mounting: SMD Power dissipation: 90W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Kind of package: reel; tape Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DPG30C300PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V Max. off-state voltage: 300V Load current: 15A x2 Max. forward impulse current: 0.24kA Max. forward voltage: 1.51V Case: TO263AB Type of diode: rectifying Reverse recovery time: 35ns Mounting: SMD Power dissipation: 90W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Kind of package: reel; tape Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCMA85P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA Max. off-state voltage: 1.2kV Load current: 85A Max. forward impulse current: 1.28kA Electrical mounting: screw Max. forward voltage: 1.51V Case: TO240AA Mechanical mounting: screw Gate current: 95/200mA Type of semiconductor module: thyristor Max. load current: 135A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCMA85P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA Max. off-state voltage: 1.6kV Load current: 85A Max. forward impulse current: 1.28kA Electrical mounting: screw Max. forward voltage: 1.51V Case: TO240AA Mechanical mounting: screw Gate current: 95/200mA Type of semiconductor module: thyristor Max. load current: 135A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCMA85P1800TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA Max. off-state voltage: 1.8kV Load current: 85A Max. forward impulse current: 1.28kA Electrical mounting: screw Max. forward voltage: 1.51V Case: TO240AA Mechanical mounting: screw Gate current: 95/200mA Type of semiconductor module: thyristor Max. load current: 135A Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DPG20C400PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V Max. off-state voltage: 0.4kV Load current: 10A x2 Max. forward impulse current: 150A Max. forward voltage: 1.51V Case: TO263AB Type of diode: rectifying Reverse recovery time: 45ns Mounting: SMD Power dissipation: 65W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Kind of package: reel; tape Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXFH48N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Power dissipation: 520W Case: TO247-3 Mounting: THT Gate charge: 38nC Kind of package: tube Reverse recovery time: 163ns Pulsed drain current: 68A Polarisation: unipolar Drain current: 48A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V On-state resistance: 65mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXGQ85N33PCD1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 330V; 85A; 150W; TO3P Type of transistor: IGBT Collector-emitter voltage: 330V Collector current: 85A Power dissipation: 150W Case: TO3P Mounting: THT Gate charge: 80nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTA140N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns Type of transistor: N-MOSFET Drain-source voltage: 55V Drain current: 140A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 82nC Kind of channel: enhancement Reverse recovery time: 40ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTT140N075L2HV-TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns Type of transistor: N-MOSFET Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: D3PAK; TO268 Gate-source voltage: 20V Mounting: SMD Gate charge: 275nC Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFX140N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 140A Power dissipation: 960W Case: PLUS247™ On-state resistance: 17mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA140N12T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO263 On-state resistance: 10mΩ Mounting: SMD Gate charge: 174nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 65ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXTH140N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTP140N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 140A Power dissipation: 250W Case: TO220AB On-state resistance: 5.4mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 40ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP140N12T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO220AB On-state resistance: 10mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 65ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSIK45-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45Ax2; Ifsm: 480A; ISOPLUS247™; tube Mounting: THT Max. forward impulse current: 0.48kA Max. forward voltage: 1.26V Power dissipation: 165W Max. off-state voltage: 1.6kV Load current: 45A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: ISOPLUS247™ Type of diode: rectifying |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PLA160 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Control voltage: 1.8...2.8V DC Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 50µs Switched voltage: max. 300V AC; max. 300V DC Case: DIP6 Max. operating current: 50mA Turn-off time: 50µs Control current max.: 50mA On-state resistance: 100Ω |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PLA160S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Control voltage: 1.8...2.8V DC Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 50µs Switched voltage: max. 300V AC; max. 300V DC Case: DIP6 Max. operating current: 50mA Turn-off time: 50µs Control current max.: 50mA On-state resistance: 100Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CLA16E800PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT Mounting: THT Max. forward impulse current: 195A Gate current: 50mA Max. off-state voltage: 0.8kV Load current: 10A Max. load current: 16A Kind of package: tube Case: TO220FP Type of thyristor: standard |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PLA160STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Control voltage: 1.8...2.8V DC Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 50µs Switched voltage: max. 300V AC; max. 300V DC Case: DIP6 Max. operating current: 50mA Turn-off time: 50µs Control current max.: 50mA On-state resistance: 100Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IXDN614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Mounting: THT Supply voltage: 4.5...35V Output current: -14...14A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 140ns Kind of package: tube Case: DIP8 Turn-off time: 130ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEI2X30-10B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 200A Max. forward voltage: 2V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1kV Electrical mounting: screw Load current: 30A x2 Max. load current: 60A Kind of package: tube Semiconductor structure: double independent |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CMA30E1600PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP Gate current: 28/50mA Max. off-state voltage: 1.6kV Load current: 23A Max. load current: 36A Kind of package: tube Case: TO220FP Type of thyristor: standard Mounting: THT Max. forward impulse current: 220A |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CPC3720CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA10P50P |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA96P085T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA32P05T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 26ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 26ns
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA36N30P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA52P10P |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA28P065T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA2N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA4N70X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA3N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA340N04T4-7 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA10P50P-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 10A; 300W; D2PAK
Type of transistor: P-MOSFET
Drain current: 10A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 10A; 300W; D2PAK
Type of transistor: P-MOSFET
Drain current: 10A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTA1N170DHV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 30ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA1N200P3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA24P085T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA36P15P |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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| IXTA3N120HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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| IXTA06N120P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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| IXTN22N100L |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 22A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.6Ω
Pulsed drain current: 50A
Power dissipation: 700W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 0.27µC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 22A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.6Ω
Pulsed drain current: 50A
Power dissipation: 700W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 0.27µC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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| IXTN62N50L |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 550nC
Reverse recovery time: 0.5µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 550nC
Reverse recovery time: 0.5µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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| IXTN200N10L2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 178A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 500A
Power dissipation: 830W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 540nC
Reverse recovery time: 245ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 178A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 500A
Power dissipation: 830W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 540nC
Reverse recovery time: 245ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN17N120L |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 155nC
Reverse recovery time: 1.83µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 155nC
Reverse recovery time: 1.83µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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| IXTN40P50P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -500V
Drain current: -40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.23Ω
Pulsed drain current: -120A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 205nC
Reverse recovery time: 477ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -500V
Drain current: -40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.23Ω
Pulsed drain current: -120A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 205nC
Reverse recovery time: 477ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN240N075L2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 225A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7mΩ
Pulsed drain current: 720A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 546nC
Reverse recovery time: 206ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 225A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7mΩ
Pulsed drain current: 720A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 546nC
Reverse recovery time: 206ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN90N25L2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 90A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 360A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 640nC
Reverse recovery time: 266ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 90A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 360A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 640nC
Reverse recovery time: 266ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN170P10P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14mΩ
Pulsed drain current: -510A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 176ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14mΩ
Pulsed drain current: -510A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 176ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTN32P60P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -600V
Drain current: -32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: -96A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 196nC
Reverse recovery time: 480ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -600V
Drain current: -32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: -96A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 196nC
Reverse recovery time: 480ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN550N055T2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 55V
Drain current: 550A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.65kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 595nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 55V
Drain current: 550A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.65kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 595nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN600N04T2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 40V
Drain current: 600A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.8kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 590nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 40V
Drain current: 600A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.8kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 590nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN200N10T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTN400N15X4 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
On-state resistance: 3.1mΩ
Power dissipation: 1.1kW
Technology: X4-Class
Reverse recovery time: 175ns
Mechanical mounting: screw
Category: Transistor modules
Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
On-state resistance: 3.1mΩ
Power dissipation: 1.1kW
Technology: X4-Class
Reverse recovery time: 175ns
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTN400N20X4 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 340A
Case: SOT227B
On-state resistance: 3mΩ
Power dissipation: 830W
Reverse recovery time: 270ns
Mechanical mounting: screw
Category: Transistor modules
Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 340A
Case: SOT227B
On-state resistance: 3mΩ
Power dissipation: 830W
Reverse recovery time: 270ns
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXTN5N250 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; 5A; SOT227B; 700W; 1.2us; screw
Type of semiconductor module: MOSFET transistor
Drain current: 5A
Case: SOT227B
Power dissipation: 700W
Reverse recovery time: 1.2µs
Mechanical mounting: screw
Category: Transistor modules
Description: Module; 5A; SOT227B; 700W; 1.2us; screw
Type of semiconductor module: MOSFET transistor
Drain current: 5A
Case: SOT227B
Power dissipation: 700W
Reverse recovery time: 1.2µs
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXTN8N150L |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.5kV
Drain current: 7.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.6Ω
Pulsed drain current: 20A
Power dissipation: 545W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 1.7µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.5kV
Drain current: 7.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.6Ω
Pulsed drain current: 20A
Power dissipation: 545W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 1.7µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXTH102N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Reverse recovery time: 97ns
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Reverse recovery time: 97ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IX4310TTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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| IX4310NTR |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| DPG30C200PC-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 200V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 200V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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| DPG30C300PC-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 300V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 300V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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| MCMA85P1200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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| MCMA85P1600TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.6kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.6kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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| MCMA85P1800TA |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.8kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.8kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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| DPG20C400PC-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 0.4kV
Load current: 10A x2
Max. forward impulse current: 150A
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 45ns
Mounting: SMD
Power dissipation: 65W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 0.4kV
Load current: 10A x2
Max. forward impulse current: 150A
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 45ns
Mounting: SMD
Power dissipation: 65W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXFH48N60X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Produkt ist nicht verfügbar
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| IXGQ85N33PCD1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 330V; 85A; 150W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 330V
Collector current: 85A
Power dissipation: 150W
Case: TO3P
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 330V; 85A; 150W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 330V
Collector current: 85A
Power dissipation: 150W
Case: TO3P
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
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| IXTA140N055T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 82nC
Kind of channel: enhancement
Reverse recovery time: 40ns
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 82nC
Kind of channel: enhancement
Reverse recovery time: 40ns
Application: automotive industry
Produkt ist nicht verfügbar
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| IXTT140N075L2HV-TR |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 275nC
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 275nC
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXFX140N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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Im Einkaufswagen
Stück im Wert von UAH
| IXTA140N12T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTH140N075L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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| IXTP140N055T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP140N12T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSIK45-16AR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; Ifsm: 480A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.26V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; Ifsm: 480A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.26V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Type of diode: rectifying
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA160 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA160S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CLA16E800PN |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 0.8kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 0.8kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Produkt ist nicht verfügbar
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| PLA160STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXDN614PI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Mounting: THT
Supply voltage: 4.5...35V
Output current: -14...14A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 140ns
Kind of package: tube
Case: DIP8
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Mounting: THT
Supply voltage: 4.5...35V
Output current: -14...14A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 140ns
Kind of package: tube
Case: DIP8
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI2X30-10B |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 200A
Max. forward voltage: 2V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 30A x2
Max. load current: 60A
Kind of package: tube
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 200A
Max. forward voltage: 2V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 30A x2
Max. load current: 60A
Kind of package: tube
Semiconductor structure: double independent
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| CMA30E1600PN |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 23A
Max. load current: 36A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 220A
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 23A
Max. load current: 36A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 220A
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)