auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 39.44 EUR |
| 10+ | 32.16 EUR |
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Technische Details IXFB132N50P3 IXYS
Description: MOSFET N-CH 500V 132A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 132A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V, Power Dissipation (Max): 1890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.
Weitere Produktangebote IXFB132N50P3 nach Preis ab 28.44 EUR bis 42.87 EUR
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IXFB132N50P3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 132A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB132N50P3 Produktcode: 94706
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IXFB132N50P3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 132A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB132N50P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 267nC Reverse recovery time: 250ns Power dissipation: 1890W Technology: HiPerFET™; Polar3™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFB132N50P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 267nC Reverse recovery time: 250ns Power dissipation: 1890W Technology: HiPerFET™; Polar3™ |
Produkt ist nicht verfügbar |