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IXFX48N60Q3 IXFX48N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D50AFCE6D67820&compId=IXFK(X)48N60Q3.pdf?ci_sign=88d6698196cd71ddff7d54284cef316093b06013 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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IXFL210N30P3 IXFL210N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC4111820&compId=IXFL210N30P3.pdf?ci_sign=8debaaf3e40442e35f52c30c53f9fb7705cad9b7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
On-state resistance: 16mΩ
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Kind of package: tube
Kind of channel: enhancement
Case: ISOPLUS264™
Type of transistor: N-MOSFET
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IXFN210N30X3 IXFN210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A8601508278BF&compId=IXFN210N30X3.pdf?ci_sign=425abed453ce5bc07b68e84cb503672f86d89703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Mechanical mounting: screw
Reverse recovery time: 190ns
Gate charge: 375nC
Kind of channel: enhancement
auf Bestellung 5 Stücke:
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2+51.22 EUR
3+50.49 EUR
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IXFB210N30P3 IXFB210N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46B16B9872A18&compId=IXFB210N30P3.pdf?ci_sign=bf9c00172d85f0f1adf86ab7c01e6aacacfaa7ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 14.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1890W
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: PLUS264™
Type of transistor: N-MOSFET
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IXFX210N30X3 IXFX210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: PLUS247™
Type of transistor: N-MOSFET
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IXFR44N50Q IXFR44N50Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CAB820&compId=IXFR44N50Q.pdf?ci_sign=99a97c2b9e5d063cf27fe5a4fef4e55efd7f134a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 213 Stücke:
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4+22.06 EUR
30+21.88 EUR
120+21.22 EUR
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IXFR44N50Q3 IXFR44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CC1820&compId=IXFR44N50Q3.pdf?ci_sign=ca7c3ddda1e0d4f113690187365893ed7eb3e98e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFH44N50Q3 IXFH44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N50P IXFR44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C95820&compId=IXFR44N50P.pdf?ci_sign=7af93dd52bee59ebe4814ce2e7c1a8e2f92a4efb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50P IXFT44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50Q3 IXFT44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ44N50P IXTQ44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13E9820&compId=IXTQ44N50P.pdf?ci_sign=5b6b390d0f88dc2b81c15815714aa839131be972 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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CPC1965Y CPC1965Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Case: SIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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CPC1963GS CPC1963GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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CPC1918J CPC1918J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493398907C0C7&compId=CPC1918.pdf?ci_sign=4fc9f0d46107b46a9061ff3415a0ee5b30266423 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 5250mA
Turn-off time: 10ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.1Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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CPC1979J CPC1979J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B380C7&compId=CPC1979.pdf?ci_sign=70957c329dbb70e06230b407c35c949224c15f38 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 1.4A
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.75Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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CPC1976YX6 CPC1976YX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AFC0C7&compId=CPC1976YX6.pdf?ci_sign=e33d691a54e5fb0e6bd851fcf1f909cfda4963d9 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
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CPC1964BX6 CPC1964BX6 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81E40C7&compId=CPC1964BX6.pdf?ci_sign=9b9c3e34b7e7142d60cacdfccc00e5c72159f0b0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1.5A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
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DPG60C300PC-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4295FD1C4C0C4&compId=DPG60C300PC.pdf?ci_sign=a033f22975254e4886d6b85c02cb90d5ac81dd13 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
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CPC5712U CPC5712U IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85CD8B72C8D8BF&compId=CPC5712.pdf?ci_sign=ecc7e95d5c1594f45f4608f513d2fdc393fd7c97 Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Output current: -500...500µA
Case: SOP16
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 500 Stücke:
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24+3.06 EUR
38+1.92 EUR
44+1.63 EUR
100+1.32 EUR
300+1.13 EUR
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LF2304NTR LF2304NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F29789D15760CE&compId=LF2304NTR.pdf?ci_sign=f1044170d027d292a2dc7abf2e6e6f6bc457bf3f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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DSEP12-12A DSEP12-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEF452F4F42143&compId=DSEP12-12A.pdf?ci_sign=0cc1292922f483364547a0e801999c0e23b38784 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 123 Stücke:
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18+3.98 EUR
34+2.13 EUR
36+2.02 EUR
100+1.93 EUR
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DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4C180AC36E0C4&compId=DSEP12-12AZ.pdf?ci_sign=956cc442568388d17ac272cecda55173443e4967 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 73 Stücke:
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20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
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IXDD609D2TR IXDD609D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
auf Bestellung 24 Stücke:
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24+2.97 EUR
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IX4428MTR IX4428MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 5 Stücke:
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5+14.3 EUR
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MDD142-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB835E44A13F20C4&compId=MDD142-14N1.pdf?ci_sign=c807210ad6cabb478a57675836e6c44b1fb6cbc3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
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LCA125L LCA125L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977900C7&compId=LCA125L.pdf?ci_sign=bd25a905c638ad1b7c2a44af4dc9a834373d843c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
21+3.45 EUR
22+3.26 EUR
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LAA125L LAA125L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.75 EUR
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LAA125P LAA125P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
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16+4.75 EUR
100+3.92 EUR
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MDD142-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836528462340C4&compId=MDD142-18N1.pdf?ci_sign=9366f54f491397d4f9552c3d0401e2db9c8cabd0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.7kA
Produkt ist nicht verfügbar
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IXFP14N85XM IXFP14N85XM IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA7B820&compId=IXFP14N85XM.pdf?ci_sign=fba212d00ea120f7800f4e1c9c0e098254fe3612 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 38W
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFP14N60P IXFP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFP14N85X IXFP14N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTA2N100P IXTA2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
27+2.7 EUR
30+2.46 EUR
50+2.4 EUR
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IXTY2N100P IXTY2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFR32N100Q3 IXFR32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C11820&compId=IXFR32N100Q3.pdf?ci_sign=207d43adf354c4b1b1b46c20c722f96e3911f588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 195nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
2+55.26 EUR
3+49.76 EUR
10+43.93 EUR
30+39.47 EUR
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CPC1301G CPC1301G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
Case: DIP4
Turn-on time: 1µs
Turn-off time: 60µs
Max. off-state voltage: 5V
Trigger current: 50mA
Slew rate: 0.25V/μs
CTR@If: 1000-8000%@1mA
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
61+1.17 EUR
64+1.13 EUR
68+1.06 EUR
69+1.04 EUR
100+1.03 EUR
Mindestbestellmenge: 40
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IXTP2N100P IXTP2N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
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IXFR32N100P IXFR32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BFB820&compId=IXFR32N100P.pdf?ci_sign=286c97be0b3093d0dac3237c4fe3344de0bb073d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK32N100P IXFK32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXFN32N100Q3 IXFN32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXTH12N100L IXTH12N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917F1820&compId=IXTH12N100L.pdf?ci_sign=063f94f56b2999358eaa03eb222f63a951994af2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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IXFK32N100Q3 IXFK32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK52N100X IXFK52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFN32N100P IXFN32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFN52N100X IXFN52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFX32N100P IXFX32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX32N100Q3 IXFX32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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DSS6-0025BS DSS6-0025BS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAE9537B9338BF&compId=DSS6-0025BS.pdf?ci_sign=c4764c4d2d09aff3e5d75d1005bf3fe019d6e548 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
114+0.63 EUR
131+0.55 EUR
250+0.51 EUR
500+0.49 EUR
Mindestbestellmenge: 82
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IXTP02N50D IXTP02N50D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49599820&compId=IXTP02N50D.pdf?ci_sign=7c63629b80656d24b64dc55efa4f5870d4ea98b3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC74F820&compId=IXKH70N60C5.pdf?ci_sign=4e1286ce35213f63fda6d3c5bff014c2071f69a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5 IXKT70N60C5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284E291BA6C7820&compId=IXKT70N60C5.pdf?ci_sign=eac3ccd80caa6a0c5898799ec7579ba6e8b3237a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1788J CPC1788J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713 Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.4 EUR
25+14.43 EUR
Mindestbestellmenge: 5
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PBA150 PBA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBA150STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DSEP29-12A DSEP29-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.18 EUR
22+3.26 EUR
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DSI30-12A DSI30-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.26 EUR
37+1.94 EUR
39+1.84 EUR
100+1.77 EUR
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MDD142-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834FBC6AAC00C4&compId=MDD142-12N1.pdf?ci_sign=e60450221a50dc38006779b9dcd279ebaf641ce1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
Produkt ist nicht verfügbar
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DMA30P1600HR DMA30P1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4530BDDF9C0C4&compId=DMA30P1600HR.pdf?ci_sign=353bf02d8c968b714b88bc63f36a7db07a0987a9 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.41 EUR
9+8.18 EUR
10+7.74 EUR
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IXFX48N60Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D50AFCE6D67820&compId=IXFK(X)48N60Q3.pdf?ci_sign=88d6698196cd71ddff7d54284cef316093b06013
IXFX48N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFL210N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94FFC4111820&compId=IXFL210N30P3.pdf?ci_sign=8debaaf3e40442e35f52c30c53f9fb7705cad9b7
IXFL210N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
On-state resistance: 16mΩ
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Kind of package: tube
Kind of channel: enhancement
Case: ISOPLUS264™
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFN210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A8601508278BF&compId=IXFN210N30X3.pdf?ci_sign=425abed453ce5bc07b68e84cb503672f86d89703 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFN210N30X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
Mechanical mounting: screw
Reverse recovery time: 190ns
Gate charge: 375nC
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+51.22 EUR
3+50.49 EUR
Mindestbestellmenge: 2
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IXFB210N30P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46B16B9872A18&compId=IXFB210N30P3.pdf?ci_sign=bf9c00172d85f0f1adf86ab7c01e6aacacfaa7ad
IXFB210N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 14.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1890W
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: PLUS264™
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFX210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFX210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: PLUS247™
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFR44N50Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CAB820&compId=IXFR44N50Q.pdf?ci_sign=99a97c2b9e5d063cf27fe5a4fef4e55efd7f134a
IXFR44N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.06 EUR
30+21.88 EUR
120+21.22 EUR
Mindestbestellmenge: 4
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IXFR44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CC1820&compId=IXFR44N50Q3.pdf?ci_sign=ca7c3ddda1e0d4f113690187365893ed7eb3e98e
IXFR44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c
IXFH44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR44N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C95820&compId=IXFR44N50P.pdf?ci_sign=7af93dd52bee59ebe4814ce2e7c1a8e2f92a4efb
IXFR44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT44N50P pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFT44N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c
IXFT44N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ44N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13E9820&compId=IXTQ44N50P.pdf?ci_sign=5b6b390d0f88dc2b81c15815714aa839131be972
IXTQ44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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CPC1965Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Case: SIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Produkt ist nicht verfügbar
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CPC1963GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98
CPC1963GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Produkt ist nicht verfügbar
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CPC1918J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493398907C0C7&compId=CPC1918.pdf?ci_sign=4fc9f0d46107b46a9061ff3415a0ee5b30266423
CPC1918J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 5250mA
Turn-off time: 10ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.1Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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CPC1979J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B380C7&compId=CPC1979.pdf?ci_sign=70957c329dbb70e06230b407c35c949224c15f38
CPC1979J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 1.4A
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.75Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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CPC1976YX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AFC0C7&compId=CPC1976YX6.pdf?ci_sign=e33d691a54e5fb0e6bd851fcf1f909cfda4963d9
CPC1976YX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1964BX6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81E40C7&compId=CPC1964BX6.pdf?ci_sign=9b9c3e34b7e7142d60cacdfccc00e5c72159f0b0
CPC1964BX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1.5A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Produkt ist nicht verfügbar
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DPG60C300PC-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4295FD1C4C0C4&compId=DPG60C300PC.pdf?ci_sign=a033f22975254e4886d6b85c02cb90d5ac81dd13
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CPC5712U pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85CD8B72C8D8BF&compId=CPC5712.pdf?ci_sign=ecc7e95d5c1594f45f4608f513d2fdc393fd7c97
CPC5712U
Hersteller: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Output current: -500...500µA
Case: SOP16
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
38+1.92 EUR
44+1.63 EUR
100+1.32 EUR
300+1.13 EUR
Mindestbestellmenge: 24
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LF2304NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F29789D15760CE&compId=LF2304NTR.pdf?ci_sign=f1044170d027d292a2dc7abf2e6e6f6bc457bf3f
LF2304NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSEP12-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEF452F4F42143&compId=DSEP12-12A.pdf?ci_sign=0cc1292922f483364547a0e801999c0e23b38784
DSEP12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
34+2.13 EUR
36+2.02 EUR
100+1.93 EUR
Mindestbestellmenge: 18
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DSEP12-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4C180AC36E0C4&compId=DSEP12-12AZ.pdf?ci_sign=956cc442568388d17ac272cecda55173443e4967
DSEP12-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.27 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXDD609D2TR pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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IX4428MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4428MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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MDD142-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB835E44A13F20C4&compId=MDD142-14N1.pdf?ci_sign=c807210ad6cabb478a57675836e6c44b1fb6cbc3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LCA125L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977900C7&compId=LCA125L.pdf?ci_sign=bd25a905c638ad1b7c2a44af4dc9a834373d843c
LCA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.08 EUR
21+3.45 EUR
22+3.26 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LAA125L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
LAA125L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
16+4.6 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
LAA125P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
LAA125P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
100+3.92 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
MDD142-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836528462340C4&compId=MDD142-18N1.pdf?ci_sign=9366f54f491397d4f9552c3d0401e2db9c8cabd0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.7kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP14N85XM pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA7B820&compId=IXFP14N85XM.pdf?ci_sign=fba212d00ea120f7800f4e1c9c0e098254fe3612
IXFP14N85XM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 38W
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFP14N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb
IXFP14N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Mounting: THT
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTA2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTA2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
27+2.7 EUR
30+2.46 EUR
50+2.4 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXTY2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTY2N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C11820&compId=IXFR32N100Q3.pdf?ci_sign=207d43adf354c4b1b1b46c20c722f96e3911f588
IXFR32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 195nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+55.26 EUR
3+49.76 EUR
10+43.93 EUR
30+39.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CPC1301G pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e
CPC1301G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
Case: DIP4
Turn-on time: 1µs
Turn-off time: 60µs
Max. off-state voltage: 5V
Trigger current: 50mA
Slew rate: 0.25V/μs
CTR@If: 1000-8000%@1mA
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
61+1.17 EUR
64+1.13 EUR
68+1.06 EUR
69+1.04 EUR
100+1.03 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IXTP2N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA1618BD17820&compId=IXTA(P%2CY)2N100P.pdf?ci_sign=ed9b99ae18ad9cc7de5cc0535e18145ae9cd8895
IXTP2N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFR32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BFB820&compId=IXFR32N100P.pdf?ci_sign=286c97be0b3093d0dac3237c4fe3344de0bb073d
IXFR32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c
IXFK32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225
IXFN32N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH12N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917F1820&compId=IXTH12N100L.pdf?ci_sign=063f94f56b2999358eaa03eb222f63a951994af2
IXTH12N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8
IXFK32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2894A9AD9909820&compId=IXFK(X)52N100X.pdf?ci_sign=d2feeeb089048c7914dc2f8557add2bc13006bca
IXFK52N100X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFN32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98
IXFN32N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910
IXFN52N100X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFX32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC1DC4FAEC1820&compId=IXFK(X)32N100P.pdf?ci_sign=d4d0595112cc0bc4e87edb1f70eff260601fd64c
IXFX32N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A93A81055778BF&compId=IXF_32N100Q3.pdf?ci_sign=e4e37fba8c821b262a57b3694710db983ba811c8
IXFX32N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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DSS6-0025BS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAE9537B9338BF&compId=DSS6-0025BS.pdf?ci_sign=c4764c4d2d09aff3e5d75d1005bf3fe019d6e548
DSS6-0025BS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
114+0.63 EUR
131+0.55 EUR
250+0.51 EUR
500+0.49 EUR
Mindestbestellmenge: 82
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IXTP02N50D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49599820&compId=IXTP02N50D.pdf?ci_sign=7c63629b80656d24b64dc55efa4f5870d4ea98b3
IXTP02N50D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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IXXH75N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB15D1C4927820&compId=IXXH75N60B3D1.pdf?ci_sign=bdc739111de6b9c22e1ccea3f1e37d6575acee96
IXXH75N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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IXKH70N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC74F820&compId=IXKH70N60C5.pdf?ci_sign=4e1286ce35213f63fda6d3c5bff014c2071f69a7
IXKH70N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXKT70N60C5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A284E291BA6C7820&compId=IXKT70N60C5.pdf?ci_sign=eac3ccd80caa6a0c5898799ec7579ba6e8b3237a
IXKT70N60C5
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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CPC1788J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F17C0C7&compId=CPC1788.pdf?ci_sign=5afe43b0f4acb5db424133f790bb06fafda6d713
CPC1788J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.4 EUR
25+14.43 EUR
Mindestbestellmenge: 5
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PBA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
PBA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBA150STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26AB60C7&compId=PBA150.pdf?ci_sign=95c39d9d73c016e3ffd8e8cb2457778578aa240e
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DSEP29-12A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD59D0904DFD8BF&compId=DSEP29-12A.pdf?ci_sign=52e4f654c53702ba952ecba83e74d2eda922abbb
DSEP29-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.18 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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DSI30-12A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEECF6943966143&compId=DSI30-12A.pdf?ci_sign=f9a445f10c0aa8da27c3439715f2c7bf4e306c19
DSI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
37+1.94 EUR
39+1.84 EUR
100+1.77 EUR
Mindestbestellmenge: 22
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MDD142-12N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB834FBC6AAC00C4&compId=MDD142-12N1.pdf?ci_sign=e60450221a50dc38006779b9dcd279ebaf641ce1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Case: Y4-M6
Produkt ist nicht verfügbar
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DMA30P1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4530BDDF9C0C4&compId=DMA30P1600HR.pdf?ci_sign=353bf02d8c968b714b88bc63f36a7db07a0987a9
DMA30P1600HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; ISO247™; 115W
Kind of package: tube
Case: ISO247™
Semiconductor structure: double series
Type of diode: rectifying
Mounting: THT
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. forward impulse current: 255A
Load current: 30A
Max. off-state voltage: 1.6kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.41 EUR
9+8.18 EUR
10+7.74 EUR
Mindestbestellmenge: 7
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