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IXFK170N20T IXFK170N20T IXYS IXFK(X)170N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK170N10P IXFK170N10P IXYS IXFH170N10P_IXFK170N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
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IXFK170N20P IXFK170N20P IXYS IXF_170N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFK170N25X3 IXFK170N25X3 IXYS IXFH(K,T)170N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXTH6N120 IXTH6N120 IXYS IXTH(T)6N120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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IXSH50N120L3KHV IXYS ixsh50n120l3khv-datasheet?assetguid=9644dbfd-17f3-4dea-9c3f-6522d4396c27 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IXSH150N120L3KHV IXYS ixsh150n120l3khv-datasheet?assetguid=3b24457e-312a-48d4-b272-f6237e6614ca Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IXGT64N60B3-TRL IXYS PdfFile218150.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 460W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 460W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
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IXGX100N170 IXGX100N170 IXYS IXGK(X)100N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
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CPC1909J CPC1909J IXYS CPC1909.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1908J CPC1908J IXYS CPC1908.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
On-state resistance: 0.3Ω
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Case: i4-pac
Turn-off time: 5ms
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
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IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: tube
Case: SO8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
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IX4426CMTR IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IX4426CN IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IX4426CNTR IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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DSEE29-12CC DSEE29-12CC IXYS media?resourcetype=datasheets&itemid=24507e8a-7c41-4bc2-92b1-51550d9eec5c&filename=Littelfuse-Power-Semiconductors-DSEE29-12CC-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 200A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.62V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSI30-12A DSI30-12A IXYS DSI30-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 300A; TO220AC; tube; 160W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.3kA
Case: TO220AC
Max. forward voltage: 1.25V
Power dissipation: 160W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
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DHG30I1200HA DHG30I1200HA IXYS DHG30I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-2; tube; 180W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.95V
Power dissipation: 180W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 200ns
Mounting: THT
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DSEI2X30-12B DSEI2X30-12B IXYS DSEI2X30-12B.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 30A x2
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 2.2V
Type of semiconductor module: diode
Max. load current: 60A
Kind of package: tube
Semiconductor structure: double independent
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DSEP2X31-12A DSEP2X31-12A IXYS media?resourcetype=datasheets&itemid=9c404301-9b52-434d-94d6-c96c0ef74990&filename=Littelfuse-Power-Semiconductors-DSEP2x31-12A-Datasheet description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 30A x2
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 1.77V
Type of semiconductor module: diode
Max. load current: 60A
Kind of package: tube
Semiconductor structure: double independent
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MMIX1F132N50P3MMIX1F132N50P3
MMIX1F132N50P3MMIX1F132N50P3
 MMIX1F132N50P3 IXYS littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Power dissipation: 520W
Gate charge: 267nC
Polarisation: unipolar
Technology: HiPerFET™; Polar3™
Drain current: 63A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: SMPD
On-state resistance: 43mΩ
Reverse recovery time: 250ns
Mounting: SMD
Pulsed drain current: 330A
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IXDN602CPI IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IXDN602CSIA IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IXDN602CSIATR IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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CLA40MT1200NPB CLA40MT1200NPB IXYS CLA40MT1200NPB.pdf Category: Triacs
Description: Triac; 1.2kV; 20A; Igt: 40/60mA; TO220AB; tube; Ifsm: 170A
Max. forward impulse current: 170A
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 20A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
Mounting: THT
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CLA40MT1200NPZ-TUB CLA40MT1200NPZ-TUB IXYS CLA40MT1200NPZ.pdf Category: Triacs
Description: Triac; 1.2kV; 20A; Igt: 40/60mA; TO263ABHV; tube; Ifsm: 170A
Max. forward impulse current: 170A
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 20A
Kind of package: tube
Case: TO263ABHV
Typ of triac: standard
Mounting: SMD
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CLA30MT1200NPZ-TRL CLA30MT1200NPZ-TRL IXYS media?resourcetype=datasheets&itemid=636eac5f-86db-4f80-a492-aa2746822f9d&filename=Littelfuse-Power-Semiconductors-CLA30MT1200NPZ-Datasheet Category: Triacs
Description: Triac; 1.2kV; 33A; Igt: 40mA; D2PAK; reel,tape
Gate current: 40mA
Max. off-state voltage: 1.2kV
Max. load current: 33A
Kind of package: reel; tape
Case: D2PAK
Typ of triac: standard
Mounting: SMD
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CLA60MT1200NTZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 66A; 30A; Igt: 60mA; SMD
Gate current: 60mA
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 66A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of thyristor: standard
Mounting: SMD
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CLA40MT1200NHR IXYS CLA40MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 20A; Igt: 60/100A; ISO247™; tube; Ifsm: 155A
Max. forward impulse current: 155A
Gate current: 60/100A
Max. off-state voltage: 1.2kV
Max. load current: 20A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
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CLA40MT1200NPZ-TRL CLA40MT1200NPZ-TRL IXYS CLA40MT1200NPZ.pdf Category: Triacs
Description: Triac; 1.2kV; 44A; Igt: 40mA; D2PAK; reel,tape
Gate current: 40mA
Max. off-state voltage: 1.2kV
Max. load current: 44A
Kind of package: reel; tape
Case: D2PAK
Typ of triac: standard
Mounting: SMD
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DSEI2X101-06A DSEI2X101-06A IXYS DSEI2x101-06A.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 192A
Mechanical mounting: screw
Kind of package: tube
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DSEI2X61-12B DSEI2X61-12B IXYS DSEI2x61-12B.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 52A x2
Case: SOT227B
Max. forward voltage: 2.5V
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Max. load current: 104A
Mechanical mounting: screw
Kind of package: tube
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DSEI2X31-06C DSEI2X31-06C IXYS DSEI2X3x.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Kind of package: tube
Technology: FRED
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DSEI2X61-04C DSEI2X61-04C IXYS DSEI2X61-04C.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
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DSEI2X31-12B DSEI2X31-12B IXYS DSEI2x31-12B.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Max. load current: 46A
Mechanical mounting: screw
Kind of package: tube
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DSEP2X91-03A DSEP2X91-03A IXYS DSEP2X91-03A-DTE.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Kind of package: tube
Technology: HiPerFRED™
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DSEP2X101-04A DSEP2X101-04A IXYS DSEP2X101-04A.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.4kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.73V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Kind of package: tube
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IXTA160N10T IXTA160N10T IXYS 238_littelfusediscretemosfetsnchanneltrenchgate.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; D2PAK,TO263AB; 60ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 132nC
Application: automotive industry
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IXTA160N10T7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n10t7_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
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IXTH160N10T IXYS 930fea42d6444a0e92695651359abcd1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 160A; 430W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
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IXTQ160N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
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MDNA280UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
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IXYR100N120C3 IXYR100N120C3 IXYS IXYR100N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
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IXYR100N65A3V1 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; ISOPLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IXFY4N60P3 IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Pulsed drain current: 8A
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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DSEI2X161-12P DSEI2X161-12P IXYS DSEI2X161-12P.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. forward voltage: 1.9V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 128A x2
Max. load current: 256A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward impulse current: 1.2kA
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IXTH50P10 IXTH50P10 IXYS IXT_50P10.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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IXTT68P20T IXTT68P20T IXYS IXT_68P20T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 245ns
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CPC2330N CPC2330N IXYS CPC2330N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.35x3.81x2.18mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SO8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
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IXFK170N20T IXFK(X)170N20T.pdf
IXFK170N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK170N10P IXFH170N10P_IXFK170N10P.pdf
IXFK170N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
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IXFK170N20P IXF_170N20P.pdf
IXFK170N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFK170N25X3 IXFH(K,T)170N25X3_HV.pdf
IXFK170N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXTH6N120 IXTH(T)6N120.pdf
IXTH6N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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IXSH50N120L3KHV ixsh50n120l3khv-datasheet?assetguid=9644dbfd-17f3-4dea-9c3f-6522d4396c27
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXSH150N120L3KHV ixsh150n120l3khv-datasheet?assetguid=3b24457e-312a-48d4-b272-f6237e6614ca
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXGT64N60B3-TRL PdfFile218150.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 460W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 460W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXGX100N170 IXGK(X)100N170.pdf
IXGX100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
Produkt ist nicht verfügbar
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CPC1909J CPC1909.pdf
CPC1909J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1908J CPC1908.pdf
CPC1908J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 3500mA; max.60VAC
Max. operating current: 3.5A
Switched voltage: max. 60V AC; max. 60V DC
On-state resistance: 0.3Ω
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Case: i4-pac
Turn-off time: 5ms
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IX4426N IX4426-27-28.pdf
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: tube
Case: SO8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
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IX4426CMTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IX4426CN
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IX4426CNTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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DSEE29-12CC media?resourcetype=datasheets&itemid=24507e8a-7c41-4bc2-92b1-51550d9eec5c&filename=Littelfuse-Power-Semiconductors-DSEE29-12CC-Datasheet
DSEE29-12CC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 200A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.62V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSI30-12A DSI30-12A.pdf
DSI30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 300A; TO220AC; tube; 160W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.3kA
Case: TO220AC
Max. forward voltage: 1.25V
Power dissipation: 160W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
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DHG30I1200HA DHG30I1200HA.pdf
DHG30I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-2; tube; 180W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.95V
Power dissipation: 180W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 200ns
Mounting: THT
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DSEI2X30-12B DSEI2X30-12B.pdf
DSEI2X30-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 30A x2
Max. forward impulse current: 375A
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 2.2V
Type of semiconductor module: diode
Max. load current: 60A
Kind of package: tube
Semiconductor structure: double independent
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DSEP2X31-12A description media?resourcetype=datasheets&itemid=9c404301-9b52-434d-94d6-c96c0ef74990&filename=Littelfuse-Power-Semiconductors-DSEP2x31-12A-Datasheet
DSEP2X31-12A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 30A x2
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 1.77V
Type of semiconductor module: diode
Max. load current: 60A
Kind of package: tube
Semiconductor structure: double independent
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MMIX1F132N50P3 littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316
MMIX1F132N50P3MMIX1F132N50P3
MMIX1F132N50P3MMIX1F132N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Power dissipation: 520W
Gate charge: 267nC
Polarisation: unipolar
Technology: HiPerFET™; Polar3™
Drain current: 63A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: SMPD
On-state resistance: 43mΩ
Reverse recovery time: 250ns
Mounting: SMD
Pulsed drain current: 330A
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IXDN602CPI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXDN602CSIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXDN602CSIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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CLA40MT1200NPB CLA40MT1200NPB.pdf
CLA40MT1200NPB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 20A; Igt: 40/60mA; TO220AB; tube; Ifsm: 170A
Max. forward impulse current: 170A
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 20A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
Mounting: THT
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CLA40MT1200NPZ-TUB CLA40MT1200NPZ.pdf
CLA40MT1200NPZ-TUB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 20A; Igt: 40/60mA; TO263ABHV; tube; Ifsm: 170A
Max. forward impulse current: 170A
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 20A
Kind of package: tube
Case: TO263ABHV
Typ of triac: standard
Mounting: SMD
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CLA30MT1200NPZ-TRL media?resourcetype=datasheets&itemid=636eac5f-86db-4f80-a492-aa2746822f9d&filename=Littelfuse-Power-Semiconductors-CLA30MT1200NPZ-Datasheet
CLA30MT1200NPZ-TRL
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 33A; Igt: 40mA; D2PAK; reel,tape
Gate current: 40mA
Max. off-state voltage: 1.2kV
Max. load current: 33A
Kind of package: reel; tape
Case: D2PAK
Typ of triac: standard
Mounting: SMD
Produkt ist nicht verfügbar
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CLA60MT1200NTZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 66A; 30A; Igt: 60mA; SMD
Gate current: 60mA
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 66A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of thyristor: standard
Mounting: SMD
Produkt ist nicht verfügbar
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CLA40MT1200NHR CLA40MT1200NHR.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 20A; Igt: 60/100A; ISO247™; tube; Ifsm: 155A
Max. forward impulse current: 155A
Gate current: 60/100A
Max. off-state voltage: 1.2kV
Max. load current: 20A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Produkt ist nicht verfügbar
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CLA40MT1200NPZ-TRL CLA40MT1200NPZ.pdf
CLA40MT1200NPZ-TRL
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 44A; Igt: 40mA; D2PAK; reel,tape
Gate current: 40mA
Max. off-state voltage: 1.2kV
Max. load current: 44A
Kind of package: reel; tape
Case: D2PAK
Typ of triac: standard
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DSEI2X101-06A DSEI2x101-06A.pdf
DSEI2X101-06A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 192A
Mechanical mounting: screw
Kind of package: tube
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DSEI2X61-12B description DSEI2x61-12B.pdf
DSEI2X61-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 52A x2
Case: SOT227B
Max. forward voltage: 2.5V
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Max. load current: 104A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 271 Stücke:
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DSEI2X31-06C DSEI2X3x.pdf
DSEI2X31-06C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Kind of package: tube
Technology: FRED
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DSEI2X61-04C DSEI2X61-04C.pdf
DSEI2X61-04C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
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DSEI2X31-12B description DSEI2x31-12B.pdf
DSEI2X31-12B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Max. load current: 46A
Mechanical mounting: screw
Kind of package: tube
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DSEP2X91-03A description DSEP2X91-03A-DTE.pdf
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Kind of package: tube
Technology: HiPerFRED™
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DSEP2X101-04A DSEP2X101-04A.pdf
DSEP2X101-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.4kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.73V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Kind of package: tube
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IXTA160N10T 238_littelfusediscretemosfetsnchanneltrenchgate.pdf
IXTA160N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; D2PAK,TO263AB; 60ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 132nC
Application: automotive industry
Produkt ist nicht verfügbar
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IXTA160N10T7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta160n10t7_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
Produkt ist nicht verfügbar
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IXTH160N10T 930fea42d6444a0e92695651359abcd1.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 160A; 430W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
Produkt ist nicht verfügbar
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IXTQ160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 160A; 430W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 132nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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MDNA280UB2200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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IXYR100N120C3 IXYR100N120C3.pdf
IXYR100N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IXYR100N65A3V1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; ISOPLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
IXFY4N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Pulsed drain current: 8A
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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DSEI2X161-12P DSEI2X161-12P.pdf
DSEI2X161-12P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. forward voltage: 1.9V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 128A x2
Max. load current: 256A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
Max. forward impulse current: 1.2kA
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IXTH50P10 IXT_50P10.pdf
IXTH50P10
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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IXTT68P20T IXT_68P20T.pdf
IXTT68P20T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 245ns
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CPC2330N CPC2330N.pdf
CPC2330N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.35x3.81x2.18mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SO8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
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