| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXTA120N04T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO263 On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 35ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTA220N04T2-7 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO263-7 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 45ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTH420N04T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Power dissipation: 935W Case: TO247-3 On-state resistance: 2mΩ Mounting: THT Gate charge: 315nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 74ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTP120N04T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO220AB On-state resistance: 6.1mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 35ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTT440N04T4HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 440A Power dissipation: 940W Case: TO268HV On-state resistance: 1.25mΩ Mounting: SMD Gate charge: 480nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 72ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXFH220N06T3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXFA220N06T3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
MCD56-12io8B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Case: TO240AA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate current: 100/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.24V Load current: 60A Max. forward impulse current: 1.5kA Max. load current: 100A Kind of package: bulk |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
MMIX1F40N110P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.1kV Drain current: 24A Pulsed drain current: 100A Power dissipation: 500W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 310nC Kind of channel: enhancement Reverse recovery time: 300ns Technology: HiPerFET™; Polar™ |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() +1 |
MMIX2F60N50P3 | IXYS |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A Type of transistor: N-MOSFET x2 Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 150A Power dissipation: 320W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhancement Reverse recovery time: 250ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
IXTP28P065T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -28A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 45mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 31ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTA28P065T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -28A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 45mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 31ns |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| MDMA360UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Gate-emitter voltage: ±20V Collector current: 175A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Topology: boost chopper; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: E2-Pack Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MDMA210UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Gate-emitter voltage: ±20V Collector current: 84A Pulsed collector current: 225A Max. off-state voltage: 1.2kV Topology: boost chopper; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: E2-Pack Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MDMA280UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 300A Max. off-state voltage: 1.2kV Topology: boost chopper; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Case: E2-Pack Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|
MCC56-14io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| MCC56-14io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|
IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 100W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC On-state resistance: 10Ω Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 1kV |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
IXTP1R6N100D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 100W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC On-state resistance: 10Ω Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 1kV |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
IXTA1R6N100D2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Mounting: SMD Case: TO263 Kind of package: tube Polarisation: unipolar Reverse recovery time: 11ns Gate charge: 645nC Drain current: 1.6A On-state resistance: 10Ω Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 1kV Kind of channel: depletion Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Polarisation: unipolar Reverse recovery time: 970ns Gate charge: 27nC Drain current: 1.6A On-state resistance: 10Ω Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 1kV Kind of channel: depletion Type of transistor: N-MOSFET Technology: Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
MEK95-06DA | IXYS |
Category: Diode modulesDescription: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V Type of semiconductor module: diode Semiconductor structure: common cathode Max. off-state voltage: 0.6kV Load current: 95A Case: TO240AA Max. forward voltage: 1.36V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
IXFK102N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Gate charge: 224nC On-state resistance: 33mΩ Power dissipation: 700W Kind of package: tube Case: TO264 Kind of channel: enhancement |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
DSEC60-06A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO247-3 Max. forward voltage: 1.6V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
DSEC60-06B | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO247-3 Max. forward voltage: 2.51V Power dissipation: 165W Reverse recovery time: 30ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
DSEC60-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.74V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTK140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Technology: Polar™ Type of transistor: N-MOSFET Polarisation: unipolar Reverse recovery time: 250ns Gate charge: 185nC On-state resistance: 0.24Ω Gate-source voltage: ±20V Drain-source voltage: 300V Power dissipation: 1.04kW Drain current: 140A Case: TO264 Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXFK140N25T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264 Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 255nC On-state resistance: 17mΩ Drain-source voltage: 250V Power dissipation: 960W Drain current: 140A Case: TO264 Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXYK140N90C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Mounting: THT Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Turn-on time: 122ns Gate charge: 330nC Turn-off time: 0.3µs Gate-emitter voltage: ±20V Collector current: 140A Power dissipation: 1.63kW Pulsed collector current: 840A Collector-emitter voltage: 900V Case: TO264 Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTH64N65X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 64A Power dissipation: 890W Case: TO247-3 On-state resistance: 51mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 450ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
CPC1777J | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω Relay variant: current source Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Body dimensions: 19.91x20.88x5.03mm Turn-on time: 20ms Control current max.: 50mA On-state resistance: 0.5Ω Max. operating current: 2A Switched voltage: max. 600V DC Insulation voltage: 2.5kV Case: i4-pac |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
CPC1779J | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS Relay variant: current source Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Body dimensions: 19.91x26.16x5.03mm Turn-on time: 20ms Control current max.: 100mA On-state resistance: 0.4Ω Max. operating current: 2A Switched voltage: max. 600V DC Insulation voltage: 2.5kV Case: ISOPLUS264™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTQ82N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 82A Power dissipation: 500W Case: TO3P Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
IXTP1N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns Kind of package: tube Case: TO220AB Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 900ns On-state resistance: 20Ω Drain current: 1A Power dissipation: 63W Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTA1N120P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Kind of package: tube Case: TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 900ns On-state resistance: 20Ω Drain current: 1A Power dissipation: 63W Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTH62N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 62A Power dissipation: 780W Case: TO247-3 On-state resistance: 50mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 445ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
IXTH52N65X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 52A Power dissipation: 660W Case: TO247-3 On-state resistance: 68mΩ Mounting: THT Gate charge: 113nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 435ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
LAA125PL | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 16Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA125S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 16Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA125LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 16Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA125 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Case: DIP8 Mounting: THT Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| LAA125LSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Case: DIP8 Mounting: SMT Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LAA125PLTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Case: DIP8 Mounting: SMT Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LAA125PTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Case: DIP8 Mounting: SMT Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| LAA125STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA On-state resistance: 16Ω Case: DIP8 Mounting: SMT Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|
LAA108P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x2.16mm Max. operating current: 300mA Control current max.: 50mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 527 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA120L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA120S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA120LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA120PL | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA108 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 300mA Control current max.: 50mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
LAA120 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA160 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 50µs Turn-off time: 50µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA Control voltage: 1.8...2.8V DC On-state resistance: 100Ω Switched voltage: max. 300V AC; max. 300V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS Case: DIP6 |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA134S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 350mA Control current max.: 50mA On-state resistance: 3Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA194S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 0.13A Control current max.: 50mA On-state resistance: 35Ω Switched voltage: max. 600V AC; max. 600V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA110 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 1ms Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA190 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 1ms Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA190S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 1ms Turn-off time: 0.5ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA193E | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 0.1A Control current max.: 50mA On-state resistance: 50Ω Switched voltage: max. 600V AC; max. 600V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
PLA194 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 0.13A Control current max.: 50mA On-state resistance: 35Ω Switched voltage: max. 600V AC; max. 600V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXTA120N04T2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA220N04T2-7 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH420N04T2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP120N04T2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT440N04T4HV |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH220N06T3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA220N06T3 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD56-12io8B |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 36.55 EUR |
| 3+ | 32.3 EUR |
| 10+ | 28.96 EUR |
| MMIX1F40N110P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 73.67 EUR |
| 3+ | 65.09 EUR |
| 10+ | 58.46 EUR |
| 20+ | 58.43 EUR |
| MMIX2F60N50P3 |
![]() |
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 52.35 EUR |
| 3+ | 46.19 EUR |
| 10+ | 41.53 EUR |
| 20+ | 38.75 EUR |
| IXTP28P065T |
![]() |
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA28P065T |
![]() |
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.53 EUR |
| 26+ | 2.83 EUR |
| 50+ | 2.36 EUR |
| MDMA360UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA210UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA280UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC56-14io1B |
![]() |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.84 EUR |
| 10+ | 31.6 EUR |
| MCC56-14io8B |
![]() |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY1R6N100D2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.66 EUR |
| 20+ | 3.62 EUR |
| 23+ | 3.13 EUR |
| 28+ | 2.63 EUR |
| 70+ | 2.6 EUR |
| IXTP1R6N100D2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 19+ | 3.86 EUR |
| 50+ | 2.82 EUR |
| 100+ | 2.5 EUR |
| IXTA1R6N100D2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA1R6N100D2HV |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MEK95-06DA |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 31.96 EUR |
| 5+ | 29.74 EUR |
| IXFK102N30P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.52 EUR |
| DSEC60-06A |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEC60-06B |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEC60-12A |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK140N30P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK140N25T |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYK140N90C3 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Case: TO264
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Case: TO264
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH64N65X |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1777J |
![]() |
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: i4-pac
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: i4-pac
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1779J |
![]() |
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.4Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.4Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ82N25P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.68 EUR |
| 10+ | 7.22 EUR |
| 30+ | 6.79 EUR |
| IXTP1N120P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA1N120P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH62N65X2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH52N65X |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 435ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 435ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA125PL |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 50+ | 5.39 EUR |
| 100+ | 4.32 EUR |
| LAA125S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 50+ | 4.19 EUR |
| LAA125LS |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.98 EUR |
| 15+ | 4.79 EUR |
| LAA125 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA125LSTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA125PLTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA125PTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA125STR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA108P |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 527 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.8 EUR |
| 28+ | 2.57 EUR |
| 32+ | 2.25 EUR |
| 33+ | 2.23 EUR |
| LAA120L |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 50+ | 5.39 EUR |
| LAA120S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.61 EUR |
| 17+ | 4.46 EUR |
| 50+ | 4.15 EUR |
| LAA120LS |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 50+ | 5.39 EUR |
| LAA120PL |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 50+ | 5.39 EUR |
| 100+ | 4.32 EUR |
| LAA108 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| LAA120 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.22 EUR |
| 18+ | 4.02 EUR |
| PLA160 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.53 EUR |
| 15+ | 4.8 EUR |
| 50+ | 4.69 EUR |
| PLA134S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 350mA
Control current max.: 50mA
On-state resistance: 3Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 350mA
Control current max.: 50mA
On-state resistance: 3Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 22.27 EUR |
| 50+ | 14.59 EUR |
| PLA194S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.13A
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.13A
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.03 EUR |
| 22+ | 3.29 EUR |
| 50+ | 3 EUR |
| PLA110 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| PLA190 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.23 EUR |
| 16+ | 4.56 EUR |
| 250+ | 3.65 EUR |
| PLA190S |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.12 EUR |
| 18+ | 4.12 EUR |
| 50+ | 3.76 EUR |
| 250+ | 3.63 EUR |
| PLA193E |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.1A
Control current max.: 50mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.1A
Control current max.: 50mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.7 EUR |
| 50+ | 2.43 EUR |
| 250+ | 1.94 EUR |
| PLA194 |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.13A
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.13A
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 600V AC; max. 600V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.58 EUR |
| 50+ | 3.65 EUR |





































