auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 2.95 EUR |
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Technische Details IXTP28P065T Littelfuse
Description: MOSFET P-CH 65V 28A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V.
Weitere Produktangebote IXTP28P065T nach Preis ab 2.56 EUR bis 6.74 EUR
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IXTP28P065T | Hersteller : Littelfuse |
 Trans MOSFET P-CH 65V 28A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP28P065T | Hersteller : Littelfuse |
Trans MOSFET P-CH 65V 28A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP28P065T | Hersteller : IXYS |
MOSFETs 28 Amps 65V 0.045 Rds |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP28P065T | Hersteller : Littelfuse |
Trans MOSFET P-CH 65V 28A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP28P065T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -28A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 45mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 31ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP28P065T | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 65V 28A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTP28P065T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -28A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 45mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 31ns |
Produkt ist nicht verfügbar |