| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DSEP29-06AS-TUB | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: D2PAK Kind of package: tube Max. forward voltage: 1.26V Reverse recovery time: 35ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSEP29-06AS-TRL | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: D2PAK; TO263AB Kind of package: reel; tape Max. forward voltage: 1.61V Reverse recovery time: 35ns Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSEP29-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220AC Kind of package: tube Max. forward voltage: 1.81V Reverse recovery time: 40ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DSEP29-12B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220-2 Kind of package: tube Max. forward voltage: 3.76V Reverse recovery time: 140ns Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXDI609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDI609SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 820 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI609SIATR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXDI609SITR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| VUO82-16NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 0.78V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN630YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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LOC110P | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A Kind of output: transistor Case: Flatpack 8pin |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| LOC110PTR | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A Kind of output: transistor Case: Flatpack 8pin |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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LOC110STR | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXFH80N65X2W | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PM1205S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PM1205STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PM1206S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Max. operating current: 0.5A Control current max.: 100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PM1206STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Max. operating current: 0.5A Control current max.: 100mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXGH10N170A | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 140W Gate charge: 29nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 20A Type of transistor: IGBT Turn-on time: 107ns Kind of package: tube Case: TO247-3 Turn-off time: 240ns Gate-emitter voltage: ±20V Collector current: 5A Mounting: THT |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH10N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 110W Gate charge: 32nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 0.3µs Kind of package: tube Case: TO247-3 Turn-off time: 630ns Gate-emitter voltage: ±20V Collector current: 10A Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFR20N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.63Ω Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX20N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFK20N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: TO264 On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXSA20N120L2-7TR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 160Ω Mounting: SMD Gate charge: 29nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IXSH20N120L2KHV | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 136W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 160Ω Mounting: THT Gate charge: 29nC Kind of channel: enhancement Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DSEP29-06AS-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-06AS-TRL |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-12B |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 820 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.38 EUR |
| 48+ | 1.78 EUR |
| 50+ | 1.71 EUR |
| 52+ | 1.65 EUR |
| 100+ | 1.59 EUR |
| 300+ | 1.57 EUR |
| IXDI609SIATR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609SITR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VUO82-16NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 54.3 EUR |
| 3+ | 50.92 EUR |
| 5+ | 50.88 EUR |
| IXDN630YI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.63 EUR |
| 10+ | 10.13 EUR |
| 25+ | 9.7 EUR |
| 50+ | 9.35 EUR |
| 100+ | 9.31 EUR |
| LOC110P |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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| LOC110PTR |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LOC110STR |
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Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXFH80N65X2W |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| PM1205S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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| PM1205STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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| PM1206S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
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| PM1206STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXGH10N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 12.07 EUR |
| 10+ | 9.78 EUR |
| IXGH10N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Produkt ist nicht verfügbar
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| IXFR20N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 43.42 EUR |
| 3+ | 38.94 EUR |
| 10+ | 34.44 EUR |
| 30+ | 31.04 EUR |
| IXFX20N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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| IXFK20N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IXSA20N120L2-7TR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXSH20N120L2KHV |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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