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IXYH40N65C3 IXYH40N65C3 IXYS IXYH40N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFR80N60P3 IXFR80N60P3 IXYS IXFR80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFX80N60P3 IXFX80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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MCD224-20io1 MCD224-20io1 IXYS MCD224-20IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD224-22io1 MCD224-22io1 IXYS MCD224-22io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-14io1 MCD225-14io1 IXYS MCD225-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-16io1 MCD225-16io1 IXYS MCD225-16io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-12io1 MCD225-12io1 IXYS MCD225-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-18io1 MCD225-18io1 IXYS MCD225-18io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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CLA80E1200HF CLA80E1200HF IXYS CLA80E1200HF.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
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IXFH10N100P IXFH10N100P IXYS IXFH10N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
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IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
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IXTP4N70X2M IXTP4N70X2M IXYS IXTP4N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
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IXFH220N06T3 IXFH220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 IXFA220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXFX420N10T IXFX420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXFK520N075T2 IXFK520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 545nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
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IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Semiconductor structure: single transistor
Mechanical mounting: screw
Polarisation: unipolar
Reverse recovery time: 150ns
Gate charge: 545nC
Type of semiconductor module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 75V
Drain current: 480A
Power dissipation: 940W
Electrical mounting: screw
Pulsed drain current: 1.5kA
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IXTA120N075T2 IXTA120N075T2 IXYS IXTA(P)120N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 50ns
Gate charge: 78nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
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IXFX520N075T2 IXFX520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 545nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
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IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Case: TO220AB
On-state resistance: 7.7mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 50ns
Gate charge: 78nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
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MMIX1F520N075T2
+1
 		MMIX1F520N075T2 IXYS MMIX1F520N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Mounting: SMD
Case: SMPD
On-state resistance: 1.6mΩ
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 150ns
Gate charge: 545nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 500A
Power dissipation: 830W
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IXTH11P50 IXTH11P50 IXYS DS94535L(IXTH-T11P50).pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
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IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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IXFH90N20X3 IXFH90N20X3 IXYS IXF_90N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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IXFQ90N20X3 IXFQ90N20X3 IXYS IXF_90N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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7+11.24 EUR
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IXFP90N20X3 IXFP90N20X3 IXYS IXF_90N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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IXFA90N20X3 IXFA90N20X3 IXYS IXFA90N20X3.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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IXFP90N20X3M IXFP90N20X3M IXYS IXFP90N20X3M.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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IXTA90N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 126 Stücke:
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IXYP8N90C3 IXYP8N90C3 IXYS IXYP(y)8N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
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IXFT340N075T2 IXFT340N075T2 IXYS IXFH(T)340N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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IXFH180N20X3 IXFH180N20X3 IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
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4+18.09 EUR
6+14.13 EUR
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IXTH80N20L IXTH80N20L IXYS IXTH(T)80N20L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT80N20L IXTT80N20L IXYS IXTH(T)80N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFT180N20X3HV IXFT180N20X3HV IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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CPC1303GRTR CPC1303GRTR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Case: SO4
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Insulation voltage: 5kV
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IXFQ140N20X3 IXFQ140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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5+15.17 EUR
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IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXGH48N60A3 IXGH48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS IXGH48N60A3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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DSS16-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSS16-01AS-TRL IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFA22N65X2 IXFA22N65X2 IXYS IXF_22N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Produkt ist nicht verfügbar
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DPS30I600HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; tube; TO247AD; FRED
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Case: TO247AD
Technology: FRED
Produkt ist nicht verfügbar
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IXFB44N100P IXFB44N100P IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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DSP25-16A DSP25-16A IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: TO247-3
Semiconductor structure: double series
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DSP25-12A DSP25-12A IXYS DSP25-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Semiconductor structure: double series
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IXYH40N65C3 IXYH40N65C3.pdf
IXYH40N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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4+20.68 EUR
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IXFR80N60P3 IXFR80N60P3.pdf
IXFR80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFX80N60P3 IXFK(X)80N60P3.pdf
IXFX80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MCD224-20io1 MCD224-20IO1.pdf
MCD224-20io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD224-22io1 MCD224-22io1.pdf
MCD224-22io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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MCD225-14io1 MCD225-14io1.pdf
MCD225-14io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-16io1 MCD225-16io1.pdf
MCD225-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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MCD225-12io1 MCD225-12io1.pdf
MCD225-12io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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MCD225-18io1 MCD225-18io1.pdf
MCD225-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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CLA80E1200HF CLA80E1200HF.pdf
CLA80E1200HF
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
10+7.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N100P IXFH10N100P.pdf
IXFH10N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.28 EUR
10+7.24 EUR
12+6.38 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.6 EUR
32+2.29 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
30+2.4 EUR
34+2.12 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N70X2M IXTP4N70X2M.pdf
IXTP4N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH220N06T3 IXxx220N06T3-DTE.pdf
IXFH220N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA220N06T3 IXxx220N06T3-DTE.pdf
IXFA220N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.59 EUR
5+17.62 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFX420N10T IXFK420N10T_IXFX420N10T.pdf
IXFX420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F420N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK520N075T2 IXFK(X)520N075T2.pdf
IXFK520N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 545nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Semiconductor structure: single transistor
Mechanical mounting: screw
Polarisation: unipolar
Reverse recovery time: 150ns
Gate charge: 545nC
Type of semiconductor module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 75V
Drain current: 480A
Power dissipation: 940W
Electrical mounting: screw
Pulsed drain current: 1.5kA
Produkt ist nicht verfügbar
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IXTA120N075T2 IXTA(P)120N075T2.pdf
IXTA120N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 50ns
Gate charge: 78nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFX520N075T2 IXFK(X)520N075T2.pdf
IXFX520N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 545nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Case: TO220AB
On-state resistance: 7.7mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 50ns
Gate charge: 78nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F520N075T2 MMIX1F520N075T2.pdf
MMIX1F520N075T2
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Mounting: SMD
Case: SMPD
On-state resistance: 1.6mΩ
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 150ns
Gate charge: 545nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 500A
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXTH11P50 DS94535L(IXTH-T11P50).pdf
IXTH11P50
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.93 EUR
10+10.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXFH90N20X3 IXF_90N20X3.pdf 200VProductBrief.pdf
IXFH90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.08 EUR
9+8.25 EUR
10+7.32 EUR
20+7.22 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ90N20X3 IXF_90N20X3.pdf 200VProductBrief.pdf
IXFQ90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.24 EUR
8+10.11 EUR
10+8.94 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFP90N20X3 IXF_90N20X3.pdf 200VProductBrief.pdf
IXFP90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.59 EUR
12+6.18 EUR
25+6.05 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFA90N20X3 IXFA90N20X3.pdf 200VProductBrief.pdf
IXFA90N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.55 EUR
11+7.14 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFP90N20X3M IXFP90N20X3M.pdf 200VProductBrief.pdf
IXFP90N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA90N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXYP8N90C3 IXYP(y)8N90C3.pdf
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT340N075T2 IXFH(T)340N075T2.pdf
IXFT340N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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IXFH180N20X3 IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.09 EUR
6+14.13 EUR
Mindestbestellmenge: 4
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IXTH80N20L IXTH(T)80N20L.pdf
IXTH80N20L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTT80N20L IXTH(T)80N20L.pdf
IXTT80N20L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 180nC
On-state resistance: 32mΩ
Drain current: 80A
Power dissipation: 520W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFT180N20X3HV IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFT180N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Gate charge: 154nC
On-state resistance: 7.5mΩ
Drain current: 180A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
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CPC1303GRTR CPC1303GR.pdf
CPC1303GRTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Case: SO4
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 8µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Insulation voltage: 5kV
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
51+1.42 EUR
Mindestbestellmenge: 38
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IXFQ140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFQ140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.96 EUR
7+11.48 EUR
10+10.31 EUR
30+10.15 EUR
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IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 75 Stücke:
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Anzahl Preis
5+15.17 EUR
10+11.17 EUR
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IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXGH48N60A3 IXGA(P,H)48N60A3.pdf
IXGH48N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXGH48N60A3D1 IXGH48N60A3D1.pdf
IXGH48N60A3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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DSS16-0045AS-TRL media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSS16-01AS-TRL
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFA22N65X2 IXF_22N65X2.pdf
IXFA22N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Produkt ist nicht verfügbar
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DPS30I600HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; tube; TO247AD; FRED
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Case: TO247AD
Technology: FRED
Produkt ist nicht verfügbar
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IXFB44N100P IXFB44N100P.pdf
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.26 EUR
10+28.23 EUR
25+27.1 EUR
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DSP25-16A Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.23V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.6kV
Case: TO247-3
Semiconductor structure: double series
auf Bestellung 231 Stücke:
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Anzahl Preis
15+4.99 EUR
17+4.38 EUR
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DSP25-12A DSP25-12A.pdf
DSP25-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Semiconductor structure: double series
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.66 EUR
17+4.38 EUR
Mindestbestellmenge: 16
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