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LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Collector-emitter voltage: 500mV
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 205 Stücke:
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43+1.7 EUR
53+1.37 EUR
67+1.07 EUR
100+0.87 EUR
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PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 145 Stücke:
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18+4.1 EUR
100+3.82 EUR
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PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 95 Stücke:
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14+5.33 EUR
17+4.28 EUR
50+3.9 EUR
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IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
auf Bestellung 321 Stücke:
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7+10.22 EUR
8+9.54 EUR
10+8.44 EUR
50+7.82 EUR
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IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
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IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXBT16N170A IXBT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 8 Stücke:
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5+15.67 EUR
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IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 18 Stücke:
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5+15.67 EUR
10+14.07 EUR
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IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
auf Bestellung 19 Stücke:
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6+12.87 EUR
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LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 450 Stücke:
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24+3.05 EUR
50+2.77 EUR
250+2.49 EUR
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LCB716S LCB716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 115 Stücke:
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50+7.99 EUR
100+6.84 EUR
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Produkt ist nicht verfügbar
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Produkt ist nicht verfügbar
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DSEI120-06A DSEI120-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Semiconductor structure: single diode
auf Bestellung 8 Stücke:
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7+11.08 EUR
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IXFT50N85XHV IXFT50N85XHV IXYS IXF_50N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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VBO22-16NO8 VBO22-16NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
auf Bestellung 50 Stücke:
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5+14.47 EUR
6+12.78 EUR
10+11.9 EUR
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IX2120B IX2120B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
auf Bestellung 232 Stücke:
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34+2.13 EUR
36+2.03 EUR
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IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 75 Stücke:
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10+13.33 EUR
30+12.24 EUR
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IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 200V; 115A; SOT227B
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXTP26P10T IXTP26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 8 Stücke:
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8+8.94 EUR
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IXTY26P10T IXTY26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTA26P10T IXTA26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 540 Stücke:
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16+4.76 EUR
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IXDI630MYI IXDI630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
auf Bestellung 110 Stücke:
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IXTH270N04T4 IXTH270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Case: TO247-3
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
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IXTP270N04T4 IXTP270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Case: TO220AB
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
auf Bestellung 59 Stücke:
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20+3.62 EUR
23+3.2 EUR
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CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
auf Bestellung 243 Stücke:
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9+8.45 EUR
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VBO21-12NO7 VBO21-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 21 Stücke:
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IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Produkt ist nicht verfügbar
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Produkt ist nicht verfügbar
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IXYX50N170C IXYX50N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXYN100N65A3 IXYN100N65A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXYN100N120C3 IXYN100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
auf Bestellung 20 Stücke:
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1+146.72 EUR
3+128.7 EUR
10+116.09 EUR
20+111.83 EUR
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IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
auf Bestellung 15 Stücke:
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1+145.43 EUR
3+128.7 EUR
10+115.83 EUR
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH120N30B3 IXGH120N30B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Kind of package: tube
Gate charge: 225nC
Turn-on time: 51ns
Turn-off time: 356ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Produkt ist nicht verfügbar
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IXGH120N30C3 IXGH120N30C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Kind of package: tube
Gate charge: 230nC
Turn-on time: 66ns
Turn-off time: 233ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Produkt ist nicht verfügbar
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IXGH28N60B3D1 IXGH28N60B3D1 IXYS IXGH28N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 80nC
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXTP18P10T IXTP18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
auf Bestellung 92 Stücke:
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20+3.63 EUR
32+2.3 EUR
35+2.04 EUR
50+1.89 EUR
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IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
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2+44.66 EUR
3+40.15 EUR
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IXTP230N075T2 IXTP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 35 Stücke:
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14+5.28 EUR
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IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 3 Stücke:
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3+23.84 EUR
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CPC3982TTR CPC3982TTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: depletion
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.15A
Power dissipation: 0.4W
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
auf Bestellung 2851 Stücke:
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103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
220+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
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CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
auf Bestellung 381 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
226+0.32 EUR
250+0.29 EUR
Mindestbestellmenge: 103
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CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Kind of channel: depletion
Case: SOT89
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.14A
Power dissipation: 1.4W
Gate-source voltage: ±15V
On-state resistance: 35Ω
Drain-source voltage: 350V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
On-state resistance: 5.5Ω
Drain current: 3A
Drain-source voltage: 1kV
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.76 EUR
21+3.47 EUR
25+3.27 EUR
50+3.13 EUR
100+2.99 EUR
Mindestbestellmenge: 16
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LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Collector-emitter voltage: 500mV
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
53+1.37 EUR
67+1.07 EUR
100+0.87 EUR
Mindestbestellmenge: 43
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PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.1 EUR
100+3.82 EUR
Mindestbestellmenge: 18
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PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
17+4.28 EUR
50+3.9 EUR
Mindestbestellmenge: 14
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IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
8+9.54 EUR
10+8.44 EUR
50+7.82 EUR
Mindestbestellmenge: 7
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IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
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IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXBT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
Mindestbestellmenge: 5
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IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
10+14.07 EUR
Mindestbestellmenge: 5
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IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.87 EUR
Mindestbestellmenge: 6
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LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
50+2.77 EUR
250+2.49 EUR
Mindestbestellmenge: 24
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LCB716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c
LCB716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.72 EUR
50+7.99 EUR
100+6.84 EUR
Mindestbestellmenge: 9
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LOC110P LOC110.pdf
LOC110P
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Produkt ist nicht verfügbar
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LOC110PTR LOC110.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Produkt ist nicht verfügbar
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DSEI120-06A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b
DSEI120-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Semiconductor structure: single diode
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.08 EUR
Mindestbestellmenge: 7
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IXFT50N85XHV IXF_50N85X.pdf
IXFT50N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: D2PAK
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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MIXA60HU1200VA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
Produkt ist nicht verfügbar
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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VBO22-16NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd
VBO22-16NO8
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.47 EUR
6+12.78 EUR
10+11.9 EUR
Mindestbestellmenge: 5
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IX2120B pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c
IX2120B
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
36+2.03 EUR
Mindestbestellmenge: 34
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IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
10+13.33 EUR
30+12.24 EUR
Mindestbestellmenge: 5
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IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 200V; 115A; SOT227B
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTP26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTP26P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTY26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTY26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTA26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTA26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
16+4.76 EUR
50+4.06 EUR
Mindestbestellmenge: 10
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IXDI630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.4 EUR
10+8.45 EUR
50+7.29 EUR
Mindestbestellmenge: 6
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IXTH270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTH270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Case: TO247-3
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTP270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Case: TO220AB
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 182nC
Reverse recovery time: 48ns
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Power dissipation: 375W
Drain current: 270A
Kind of package: tube
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.02 EUR
20+3.62 EUR
23+3.2 EUR
50+2.97 EUR
Mindestbestellmenge: 18
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CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.8 EUR
9+8.45 EUR
10+7.81 EUR
Mindestbestellmenge: 8
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VBO21-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208
VBO21-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.33 EUR
6+13.61 EUR
10+12.24 EUR
Mindestbestellmenge: 5
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IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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MDI550-12A4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Produkt ist nicht verfügbar
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MID550-12A4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Produkt ist nicht verfügbar
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IXYX100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953
IXYX100N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Produkt ist nicht verfügbar
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IXYX50N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b
IXYX50N170C
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 50A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXYN100N65A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b
IXYN100N65A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXYN100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405
IXYN100N120C3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
Type of semiconductor module: IGBT
Electrical mounting: screw
Produkt ist nicht verfügbar
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IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+146.72 EUR
3+128.7 EUR
10+116.09 EUR
20+111.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+145.43 EUR
3+128.7 EUR
10+115.83 EUR
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IXGH30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGH30N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH120N30B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27
IXGH120N30B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Kind of package: tube
Gate charge: 225nC
Turn-on time: 51ns
Turn-off time: 356ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Produkt ist nicht verfügbar
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IXGH120N30C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f
IXGH120N30C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Kind of package: tube
Gate charge: 230nC
Turn-on time: 66ns
Turn-off time: 233ns
Power dissipation: 540W
Collector-emitter voltage: 300V
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Produkt ist nicht verfügbar
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IXGH28N60B3D1 IXGH28N60B3D1.pdf
IXGH28N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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IXGH30N120C3H1 IXGH30N120C3H1.pdf
IXGH30N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 80nC
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 115A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH48N60A3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380
IXGH48N60A3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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IXTP18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTP18P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
32+2.3 EUR
35+2.04 EUR
50+1.89 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.66 EUR
3+40.15 EUR
Mindestbestellmenge: 2
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IXTP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988
IXTP230N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 75V
Gate charge: 178nC
Reverse recovery time: 66ns
On-state resistance: 4.2mΩ
Power dissipation: 480W
Drain current: 230A
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.76 EUR
14+5.28 EUR
Mindestbestellmenge: 11
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IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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CPC3982TTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3
CPC3982TTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: depletion
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.15A
Power dissipation: 0.4W
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
118+0.61 EUR
207+0.35 EUR
220+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 103
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CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
auf Bestellung 381 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
226+0.32 EUR
250+0.29 EUR
Mindestbestellmenge: 103
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CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Kind of channel: depletion
Case: SOT89
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.14A
Power dissipation: 1.4W
Gate-source voltage: ±15V
On-state resistance: 35Ω
Drain-source voltage: 350V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
On-state resistance: 5.5Ω
Drain current: 3A
Drain-source voltage: 1kV
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
21+3.47 EUR
25+3.27 EUR
50+3.13 EUR
100+2.99 EUR
Mindestbestellmenge: 16
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