| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFA26N30X3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Power dissipation: 170W Gate charge: 22nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 26A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 66mΩ Reverse recovery time: 105ns Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSA20C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V Mounting: THT Case: TO220AB Max. off-state voltage: 0.1kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 0.24kA Max. forward voltage: 0.71V Power dissipation: 65W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFH90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFQ90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO3P Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 124ns Pulsed drain current: 220A Polarisation: unipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFA90N20X3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 95ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP90N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA90N20X3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns Type of transistor: N-MOSFET Technology: X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: D2PAK-3 Gate-source voltage: 20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 124ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MDD175-28N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.8kV Load current: 240A Case: Y1-CU Max. forward voltage: 1.01V Max. forward impulse current: 7.23kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXTT40N50L2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: D3PAK; TO268 Gate-source voltage: 20V On-state resistance: 0.17Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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XCA170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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XCA170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| XCA170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXDI630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDI630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDI630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDI630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DPG30P300PJ | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A Semiconductor structure: double series Features of semiconductor devices: fast switching Max. forward impulse current: 0.45kA Case: ISOPLUS220™ Kind of package: tube Max. forward voltage: 1.27V Reverse recovery time: 35ns Power dissipation: 145W Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPG80C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 40A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 0.45kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.36V Power dissipation: 215W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPG60IM400QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 0.45kA Case: TO3P Kind of package: tube Max. forward voltage: 1.47V Reverse recovery time: 45ns Power dissipation: 275W Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCC95-18io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTR20P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Technology: PolarP™ Drain current: -13A Kind of channel: enhancement Drain-source voltage: -500V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.49Ω Reverse recovery time: 406ns Power dissipation: 190W Gate charge: 103nC Polarisation: unipolar |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN75N120 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B Technology: NPT Collector current: 150A Power dissipation: 660W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 190A Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYH75N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 1.15kW Case: TO247; TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 157nC Kind of package: tube Turn-on time: 24ns Turn-off time: 235ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXFP22N65X2MW | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MDMA60B1200MB | IXYS |
Category: Diode modules Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: THT Load current: 60A Kind of package: bulk Case: ECO-PAC 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXFA5N100P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263 On-state resistance: 2.8Ω Reverse recovery time: 200ns Power dissipation: 250W Gate charge: 33.4nC Technology: HiPerFET™ Drain current: 5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP5N100PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: TO220-3 On-state resistance: 2.8Ω Reverse recovery time: 200ns Power dissipation: 42W Gate charge: 33.4nC Drain current: 2.3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFT15N100Q3-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D3PAK; TO268 On-state resistance: 1.1Ω Reverse recovery time: 250ns Power dissipation: 690W Gate charge: 64nC Technology: HiPerFET™ Drain current: 15A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTA05N100-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263 On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 40W Gate charge: 7.8nC Drain current: 0.75A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA05N100HV-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263AB On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 40W Gate charge: 7.8nC Drain current: 0.75A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MXB12R600DPHFC | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns Type of transistor: N-MOSFET Technology: X2-Class Polarisation: N Drain-source voltage: 600V Drain current: 18A Power dissipation: 130W Case: i4-pac On-state resistance: 0.16Ω Mounting: THT Gate charge: 37nC Kind of channel: enhancement Reverse recovery time: 145ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CPC1563GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC On-state resistance: 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2ms Switched voltage: max. 600V AC; max. 600V DC Case: DIP6 Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CPC1963GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTA50N20P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns Type of transistor: N-MOSFET Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: D2PAK; TO263 Gate-source voltage: 20V Mounting: SMD Gate charge: 70nC Kind of channel: enhancement Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY90N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns On-state resistance: 8.4mΩ Reverse recovery time: 37ns Mounting: SMD Power dissipation: 150W Gate charge: 42nC Polarisation: N Drain current: 90A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK; TO252AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 350 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY90N055T2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns Reverse recovery time: 37ns Mounting: SMD Power dissipation: 150W Gate charge: 42nC Drain current: 90A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Case: DPAK; TO252AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 55ns |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUBW50-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 53A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 290W Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MUBW30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 180W Mechanical mounting: screw Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MUBW30-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 21A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Mechanical mounting: screw Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MUBW15-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 14A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 75W Mechanical mounting: screw Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MUBW25-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Power dissipation: 225W Mechanical mounting: screw Technology: NPT |
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| MUBW75-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 65A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 320W Mechanical mounting: screw Technology: NPT |
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| MUBW75-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 355W Mechanical mounting: screw |
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| MUBW10-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 8A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 18A Power dissipation: 50W Mechanical mounting: screw Technology: NPT |
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| MUBW10-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 15A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 85W Mechanical mounting: screw Technology: NPT |
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| MUBW10-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 35A Power dissipation: 180W Mechanical mounting: screw Technology: NPT |
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| MUBW100-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 85A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 410W Mechanical mounting: screw Technology: NPT |
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| MUBW15-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 18A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 100W Mechanical mounting: screw Technology: NPT |
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| MUBW15-12T7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 140W Mechanical mounting: screw Technology: NPT |
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| MUBW20-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 17A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 85W Mechanical mounting: screw Technology: NPT |
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| MUBW35-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 29A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 130W Mechanical mounting: screw Technology: NPT |
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| MUBW35-12A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Power dissipation: 225W Mechanical mounting: screw Technology: NPT |
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| MUBW50-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 250W Mechanical mounting: screw Technology: NPT |
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Im Einkaufswagen Stück im Wert von UAH | |
| MUBW50-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 270W Mechanical mounting: screw |
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| MUBW75-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 34A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 450W Mechanical mounting: screw |
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|
|
IXFN360N10T | IXYS |
Category: Transistor modules Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 360A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 2.6mΩ Pulsed drain current: 900A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 130ns Gate charge: 525nC |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFA26N30X3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
Produkt ist nicht verfügbar
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| DSA20C100PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| IXFH90N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA90N20X3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP90N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFQ90N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA90N20X3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Pulsed drain current: 220A
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFA90N20X3-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 90A; 390W; D2PAK,TO263; 95ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 95ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IXFP90N20X3M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXTA90N20X3-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; 200V; 90A; 390W; D2PAK-3; 124ns
Type of transistor: N-MOSFET
Technology: X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: D2PAK-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MDD175-28N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| IXTT40N50L2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 40A; 540W; D3PAK,TO268; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| XCA170 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
| XCA170S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| XCA170STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXDI630MCI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDI630YI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDI630MYI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDI630CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DPG30P300PJ |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 145W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 450A; ISOPLUS220™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: ISOPLUS220™
Kind of package: tube
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 145W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG80C300HB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.36V
Power dissipation: 215W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; Ifsm: 450A; TO247-3; tube; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.36V
Power dissipation: 215W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG60IM400QB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO3P
Kind of package: tube
Max. forward voltage: 1.47V
Reverse recovery time: 45ns
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; Ifsm: 450A; TO3P; tube; 275W; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.45kA
Case: TO3P
Kind of package: tube
Max. forward voltage: 1.47V
Reverse recovery time: 45ns
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| MCC95-18io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTR20P50P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: PolarP™
Drain current: -13A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.49Ω
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: PolarP™
Drain current: -13A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.49Ω
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN75N120 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH75N120B4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP22N65X2MW |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| MDMA60B1200MB |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
Category: Diode modules
Description: Module: diode; 1.2kV; 60A; ECO-PAC 1; THT; screw; bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Load current: 60A
Kind of package: bulk
Case: ECO-PAC 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA5N100P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 5A; 250W; D2PAK,TO263; 200ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 250W
Gate charge: 33.4nC
Technology: HiPerFET™
Drain current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXFP5N100PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: TO220-3
On-state resistance: 2.8Ω
Reverse recovery time: 200ns
Power dissipation: 42W
Gate charge: 33.4nC
Drain current: 2.3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFT15N100Q3-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 1.1Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Technology: HiPerFET™
Drain current: 15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 15A; 690W; D3PAK,TO268; 250ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 1.1Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Technology: HiPerFET™
Drain current: 15A
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXTA05N100-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTA05N100HV-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263AB; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Gate charge: 7.8nC
Drain current: 0.75A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MXB12R600DPHFC |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 130W
Case: i4-pac
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| CPC1563GSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1963GSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 50mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXTA50N20P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 200V; 50A; 360W; D2PAK,TO263; 150ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTY90N055T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 90A; 150W; DPAK,TO252AA; 37ns
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Polarisation: N
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 350 Stücke
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| IXTY90N055T2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 90A; 150W; DPAK,TO252AA; 37ns
Reverse recovery time: 37ns
Mounting: SMD
Power dissipation: 150W
Gate charge: 42nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXTP96P085T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| MUBW50-17T8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW30-06A7 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW30-12A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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| MUBW15-06A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW25-12A7 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW75-06A8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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| MUBW75-12T8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| MUBW10-06A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 8A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Power dissipation: 50W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW10-06A7 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW10-12A7 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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| MUBW100-06A8 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 85A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 410W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW15-06A7 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW15-12T7 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW20-06A6K |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUBW35-06A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
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Stück im Wert von UAH
| MUBW35-12A8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Mechanical mounting: screw
Technology: NPT
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Stück im Wert von UAH
| MUBW50-06A8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Mechanical mounting: screw
Technology: NPT
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Stück im Wert von UAH
| MUBW50-12T8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
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| MUBW75-17T8 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXFN360N10T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 130ns
Gate charge: 525nC
Category: Transistor modules
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 130ns
Gate charge: 525nC
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)