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DSEP29-06AS-TUB DSEP29-06AS-TUB IXYS DSEP29-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
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DSEP29-06AS-TRL DSEP29-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
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DSEP29-12A DSEP29-12A IXYS DSEP29-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
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DSEP29-12B IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Produkt ist nicht verfügbar
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IXDI609SI IXDI609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SIA IXDI609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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36+2.38 EUR
48+1.78 EUR
50+1.71 EUR
52+1.65 EUR
100+1.59 EUR
300+1.57 EUR
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IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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VUO82-16NO7 IXYS VUO82-16NO7.pdf LFPCN250701_PWS-x screw.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
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IXDN630YI IXDN630YI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
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10+10.13 EUR
25+9.7 EUR
50+9.35 EUR
100+9.31 EUR
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
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LOC110STR LOC110STR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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IXFH80N65X2W IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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PM1205S PM1205S IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1205STR IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
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IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
auf Bestellung 278 Stücke:
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IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
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IXFR20N120P IXFR20N120P IXYS IXFR20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
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3+38.94 EUR
10+34.44 EUR
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IXFX20N120P IXFX20N120P IXYS IXF_20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFK20N120P IXFK20N120P IXYS IXF_20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
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IXSA20N120L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
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IXSH20N120L2KHV IXYS ixsh20n120l2khv-datasheet?assetguid=9393cb5f-7bae-401e-ad69-960584edc726 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
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DSEP29-06AS-TUB DSEP29-06AS.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
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DSEP29-06AS-TRL Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DSEP29-12A DSEP29-12A.pdf
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
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DSEP29-12B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Produkt ist nicht verfügbar
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IXDI609SI IXDD609CI.pdf
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SIA IXDD609CI.pdf
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 820 Stücke:
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AnzahlPrivatkunde
36+2.38 EUR
48+1.78 EUR
50+1.71 EUR
52+1.65 EUR
100+1.59 EUR
300+1.57 EUR
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IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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VUO82-16NO7 VUO82-16NO7.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 22 Stücke:
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AnzahlPrivatkunde
2+54.3 EUR
3+50.92 EUR
5+50.88 EUR
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IXDN630YI IXD_630.pdf
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 114 Stücke:
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AnzahlPrivatkunde
7+12.63 EUR
10+10.13 EUR
25+9.7 EUR
50+9.35 EUR
100+9.31 EUR
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LOC110P LOC110.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110PTR LOC110.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Kind of output: transistor
Case: Flatpack 8pin
Produkt ist nicht verfügbar
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LOC110STR LOC110.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXFH80N65X2W
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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PM1205S PM1205.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
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PM1205STR PM1205.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
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PM1206S PM1206.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
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PM1206STR PM1206.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXGH10N170A IXG_10N170A.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+12.07 EUR
10+9.78 EUR
Mindestbestellmenge: 8 Stücke
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IXGH10N170 IXGH(t)10N170.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Produkt ist nicht verfügbar
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IXFR20N120P IXFR20N120P.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+43.42 EUR
3+38.94 EUR
10+34.44 EUR
30+31.04 EUR
Mindestbestellmenge: 2 Stücke
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IXFX20N120P IXF_20N120P.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFK20N120P IXF_20N120P.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXSA20N120L2-7TR power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXSH20N120L2KHV ixsh20n120l2khv-datasheet?assetguid=9393cb5f-7bae-401e-ad69-960584edc726
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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