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MTC120WX75GD-SMD IXYS Description: MOSFET 6N-CH 75V 180A ISOPLUS
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Packaging: Tube
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GWM160-0055X1-SMDSAM IXYS GWM160-0055X1.pdf Description: MOSFET 6N-CH 55V 150A ISOPLUS
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MCD600-22IO1W IXYS Description: MOD SCR HI POWER 1200V
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IXTK3N250L IXYS media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFM15N60 IXYS IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf Description: MOSFET N-CH 600V 15A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFT52N30Q TRL IXYS IXF(H,K,T)52N30Q.pdf Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268 (IXFT)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
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IXFX52N30Q IXYS Description: MOSFET N-CH 300V 52A PLUS247-3
Drain to Source Voltage (Vdss): 300 V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Power Dissipation (Max): 360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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MDD26-18N1B MDD26-18N1B IXYS MDD26-18N1B.pdf Description: DIODE MODULE 1.8KV 36A TO240AA
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MDD56-18N1B MDD56-18N1B IXYS MDD56-18N1B.pdf Description: DIODE MOD GP 1800V 95A TO240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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IXGH56N60B3 IXYS Description: DISC IGBT PT-MID FREQUENCY TO-24
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K1270MA420 IXYS Description: SCR 4.2KV W77
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MDA72-16N1B MDA72-16N1B IXYS MDD72,%20MDA72.pdf Description: DIODE MODULE 1.6KV 113A TO240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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IXFP30N25X3M IXFP30N25X3M IXYS littelfuse-discrete-mosfets-ixfp30n25x3m-datasheet?assetguid=2d206ff5-b2ac-4ccd-97cf-d473755efd4c Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFJ80N25X3 IXFJ80N25X3 IXYS PCIM_Highlights_2017.pdf Description: MOSFET N-CH 250V 44A ISO TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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MCB20P1200LB-TRR IXYS Description: MCB20P1200LB-TRR
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MCB30P1200LB-TRR IXYS media?resourcetype=datasheets&itemid=5a7c5301-a704-415b-8ddc-e9365d96adad&filename=littelfuse%2520power%2520semiconductors%2520mcb30p1200lb%2520datasheet.pdf Description: MOSFET 2N-CH 1200V 9SMPD
Supplier Device Package: 9-SMPD-B
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
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CLE90UH1200TLB-TRR IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf Description: BIPOLAR MODULE - THYRISTOR SMPD
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MCB60P1200TLB-TRR IXYS Description: MCB60P1200TLB-TRR
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MCB40P1200LB-TRR IXYS Description: MCB40P1200LB-TRR
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DHG60U1200LB-TRR DHG60U1200LB-TRR IXYS DHG60U1200LB.pdf Description: BRIDGE RECT 3P 1.2KV 60A 9-SMPDB
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DHG40B1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Average Rectified (Io): 34 A
Voltage - Peak Reverse (Max): 1.2 kV
Part Status: Active
Supplier Device Package: 9-SMPD-B
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
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MKH17RP650DCGL-TRR IXYS Description: MKH17RP650DCGLB-TRR
Part Status: Active
Packaging: Tape & Reel (TR)
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N3175HE160 IXYS Description: SCR 1.6KV 6310A W80
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N3175HE180 IXYS media?resourcetype=datasheets&amp;itemid=5768ca36-608a-49f0-9516-8afe9a8c20e9&amp;filename=littelfuse_discrete_thyristors_phase_control_n3175he1_0_datasheet.pdf Description: SCR 1.8KV 6310A W80
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 6310 A
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3175 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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IXA20RG1200DHG-TUB IXA20RG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHG-TRR IXA20RG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20I1200PZ-TUB IXA20I1200PZ-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 165 W
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IXA20I1200PZ-TRL IXA20I1200PZ-TRL IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Power - Max: 165 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IXYP24N100A4 IXYP24N100A4 IXYS littelfuse-discrete-igbts-ixy-24n100a4-datasheet?assetguid=10de694c-f2b8-4ef8-81d5-7cb713d12062 Description: IGBT PT 1000V 85A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
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IXFP8N65X2M IXFP8N65X2M IXYS Description: MOSFET N-CH 650V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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QJ8035LH4TP QJ8035LH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
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QJ8035RH4TP QJ8035RH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
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QJ8035NH4TP QJ8035NH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
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IXFK170N25X3 IXFK170N25X3 IXYS littelfuse-discrete-mosfets-ixf-170n25x3-datasheet?assetguid=27111ec5-cb82-481f-918b-bee4de39fe3a Description: MOSFET N-CH 250V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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VBE60-12A VBE60-12A IXYS VBE6012A.pdf Description: BRIDGE RECT 1P 1.2KV 60A SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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MDNA660U2200PT-PC IXYS Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
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N1725MC360 IXYS Description: SCR 3.6KV 3360A W70
Mounting Type: Chassis Mount
Package / Case: TO-200AC, K-PUK
Packaging: Box
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 3360 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W70
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1725 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
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IXTA140P05T-TRL IXTA140P05T-TRL IXYS Description: IXTA140P05T
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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QJ8030RH4TP QJ8030RH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
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QJ8035NH4RP QJ8035NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
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QJ8035NH4RP QJ8035NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
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QJ8030NH4TP QJ8030NH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
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DSA120X150LB-TUB DSA120X150LB-TUB IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
Technology: Schottky
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOPLUS-SMPD™.B
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251 Description: SCR 1.2KV 7.8A TO-252AA
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 7.8 A
Part Status: Active
Supplier Device Package: TO-252AA
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Current - On State (It (AV)) (Max): 5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 150°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251 Description: SCR 1.2KV 7.8A TO-252AA
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 7.8 A
Part Status: Active
Supplier Device Package: TO-252AA
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Current - On State (It (AV)) (Max): 5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 150°C
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DHG40B1200LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Average Rectified (Io): 34 A
Voltage - Peak Reverse (Max): 1.2 kV
Part Status: Active
Supplier Device Package: 9-SMPD-B
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tube
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IXFQ80N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
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S6X8BBS3RP S6X8BBS3RP IXYS littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552 Description: SCR 600V 800MA SOT-23-3
Current - On State (It (RMS)) (Max): 800 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Off State: 600 V
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S6X8BBS3RP S6X8BBS3RP IXYS littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552 Description: SCR 600V 800MA SOT-23-3
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 800 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMA30P1200HB IXYS media?resourcetype=datasheets&itemid=9e8e9c31-8e39-46b5-8db7-7500dfb48089&filename=littelfuse-power-semiconductors-dma30p1200hb-datasheet Description: DIODE GEN PURP 1.2KV 30A TO247
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 (IXTH)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
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MKH17RP650DCGL-TUB IXYS Description: MKH17RP650DCGLB-TUB
Part Status: Active
Packaging: Tube
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MKH24I650HR IXYS media?resourcetype=datasheets&itemid=7a052698-ad25-450e-a21d-07ac16a73f21&filename=littelfuse_discrete_mosfets_n-channel_super_junction_mkh24i650hr_datasheet.pdf Description: DISCMSFT NCHSUPRJUNCCFD-CLS ISO2
Part Status: Active
Packaging: Tube
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S6X8TS3RP S6X8TS3RP IXYS sxx8xsx-ev-series-datasheet?assetguid=33D0D5E7-46FD-406D-80AE-F94899E78783 Description: SCR 800V 800MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
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S6X8TS3RP S6X8TS3RP IXYS sxx8xsx-ev-series-datasheet?assetguid=33D0D5E7-46FD-406D-80AE-F94899E78783 Description: SCR 800V 800MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
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CNA30E2200FB CNA30E2200FB IXYS media?resourcetype=datasheets&itemid=03d6ed5c-1cb4-41e7-980c-aaa0d075ef37&filename=Littelfuse-Power-Semiconductors-CNA30E2200FB-Datasheet Description: SCR 2.2KV 47A I4-PAC
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 47 A
Part Status: Active
Supplier Device Package: ISOPLUS i4-PAC™
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 3 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 30 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -10°C ~ 70°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Packaging: Tube
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LGD8201TH IXYS Description: DPAK, IGBT3
Power - Max: 125 W
Current - Collector Pulsed (Icm): 50 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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LGB8204ATH LGB8204ATH IXYS media?resourcetype=datasheets&itemid=ef372b67-c6a1-42f9-a56c-a2c35c882046&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgb8204ath_datasheet.pdf Description: D2PAK, IGBT3
Power - Max: 115 W
Current - Collector Pulsed (Icm): 50 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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LST3205EL2CT2 IXYS Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
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GWM120-0075P3-SMD SAM IXYS GWM120-0075P3.pdf Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GWM120-0075X1-SMDSAM IXYS GWM120-0075X1.pdf Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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MTC120WX75GD-SMD
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 180A ISOPLUS
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Packaging: Tube
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GWM160-0055X1-SMDSAM GWM160-0055X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 55V 150A ISOPLUS
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MCD600-22IO1W
Hersteller: IXYS
Description: MOD SCR HI POWER 1200V
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IXTK3N250L media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFM15N60 IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
Produkt ist nicht verfügbar
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IXFT52N30Q TRL IXF(H,K,T)52N30Q.pdf
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268 (IXFT)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXFX52N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A PLUS247-3
Drain to Source Voltage (Vdss): 300 V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Power Dissipation (Max): 360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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MDD26-18N1B MDD26-18N1B.pdf
MDD26-18N1B
Hersteller: IXYS
Description: DIODE MODULE 1.8KV 36A TO240AA
Produkt ist nicht verfügbar
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MDD56-18N1B MDD56-18N1B.pdf
MDD56-18N1B
Hersteller: IXYS
Description: DIODE MOD GP 1800V 95A TO240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Produkt ist nicht verfügbar
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IXGH56N60B3
Hersteller: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-24
Produkt ist nicht verfügbar
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K1270MA420
Hersteller: IXYS
Description: SCR 4.2KV W77
Produkt ist nicht verfügbar
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MDA72-16N1B MDD72,%20MDA72.pdf
MDA72-16N1B
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 113A TO240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 35 Stücke:
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1+82.81 EUR
10+76.36 EUR
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IXFP30N25X3M littelfuse-discrete-mosfets-ixfp30n25x3m-datasheet?assetguid=2d206ff5-b2ac-4ccd-97cf-d473755efd4c
IXFP30N25X3M
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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IXFJ80N25X3 PCIM_Highlights_2017.pdf
IXFJ80N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A ISO TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+26.05 EUR
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MCB20P1200LB-TRR
Hersteller: IXYS
Description: MCB20P1200LB-TRR
Produkt ist nicht verfügbar
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MCB30P1200LB-TRR media?resourcetype=datasheets&itemid=5a7c5301-a704-415b-8ddc-e9365d96adad&filename=littelfuse%2520power%2520semiconductors%2520mcb30p1200lb%2520datasheet.pdf
Hersteller: IXYS
Description: MOSFET 2N-CH 1200V 9SMPD
Supplier Device Package: 9-SMPD-B
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CLE90UH1200TLB-TRR Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR SMPD
Produkt ist nicht verfügbar
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MCB60P1200TLB-TRR
Hersteller: IXYS
Description: MCB60P1200TLB-TRR
Produkt ist nicht verfügbar
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MCB40P1200LB-TRR
Hersteller: IXYS
Description: MCB40P1200LB-TRR
Produkt ist nicht verfügbar
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DHG60U1200LB-TRR DHG60U1200LB.pdf
DHG60U1200LB-TRR
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 60A 9-SMPDB
Produkt ist nicht verfügbar
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DHG40B1200LB-TRR
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Average Rectified (Io): 34 A
Voltage - Peak Reverse (Max): 1.2 kV
Part Status: Active
Supplier Device Package: 9-SMPD-B
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MKH17RP650DCGL-TRR
Hersteller: IXYS
Description: MKH17RP650DCGLB-TRR
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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N3175HE160
Hersteller: IXYS
Description: SCR 1.6KV 6310A W80
Produkt ist nicht verfügbar
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N3175HE180 media?resourcetype=datasheets&amp;itemid=5768ca36-608a-49f0-9516-8afe9a8c20e9&amp;filename=littelfuse_discrete_thyristors_phase_control_n3175he1_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 1.8KV 6310A W80
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 6310 A
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3175 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Produkt ist nicht verfügbar
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IXA20RG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TUB
Hersteller: IXYS
Description: IGBT 1200V 32A 125W SMPD
Produkt ist nicht verfügbar
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IXA20RG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TRR
Hersteller: IXYS
Description: IGBT 1200V 32A 125W SMPD
Produkt ist nicht verfügbar
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IXA20I1200PZ-TUB
IXA20I1200PZ-TUB
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 165 W
Produkt ist nicht verfügbar
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IXA20I1200PZ-TRL
IXA20I1200PZ-TRL
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Power - Max: 165 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXYP24N100A4 littelfuse-discrete-igbts-ixy-24n100a4-datasheet?assetguid=10de694c-f2b8-4ef8-81d5-7cb713d12062
IXYP24N100A4
Hersteller: IXYS
Description: IGBT PT 1000V 85A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXFP8N65X2M
IXFP8N65X2M
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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QJ8035LH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035LH4TP
Hersteller: IXYS
Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.26 EUR
10+11.08 EUR
100+8.15 EUR
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QJ8035RH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035RH4TP
Hersteller: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
auf Bestellung 698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.24 EUR
10+9.65 EUR
100+7.04 EUR
500+5.94 EUR
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QJ8035NH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4TP
Hersteller: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.92 EUR
10+10.84 EUR
100+7.97 EUR
500+6.75 EUR
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IXFK170N25X3 littelfuse-discrete-mosfets-ixf-170n25x3-datasheet?assetguid=27111ec5-cb82-481f-918b-bee4de39fe3a
IXFK170N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+40.84 EUR
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VBE60-12A VBE6012A.pdf
VBE60-12A
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 60A SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 114 Stücke:
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AnzahlPrivatkunde
1+75.07 EUR
10+55.93 EUR
100+48.05 EUR
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MDNA660U2200PT-PC
Hersteller: IXYS
Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
Produkt ist nicht verfügbar
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N1725MC360
Hersteller: IXYS
Description: SCR 3.6KV 3360A W70
Mounting Type: Chassis Mount
Package / Case: TO-200AC, K-PUK
Packaging: Box
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 3360 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W70
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1725 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Produkt ist nicht verfügbar
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IXTA140P05T-TRL
IXTA140P05T-TRL
Hersteller: IXYS
Description: IXTA140P05T
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QJ8030RH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030RH4TP
Hersteller: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.28 EUR
10+8.95 EUR
100+6.51 EUR
500+5.46 EUR
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QJ8035NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4RP
Hersteller: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
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QJ8035NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4RP
Hersteller: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
auf Bestellung 490 Stücke:
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2+15.92 EUR
10+10.84 EUR
100+8.04 EUR
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QJ8030NH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4TP
Hersteller: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
auf Bestellung 823 Stücke:
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2+15.43 EUR
10+10.5 EUR
100+7.7 EUR
500+6.51 EUR
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DSA120X150LB-TUB DSA120X150LB.pdf
DSA120X150LB-TUB
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Technology: Schottky
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOPLUS-SMPD™.B
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Produkt ist nicht verfügbar
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CLA5E1200UC-TRL Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251
CLA5E1200UC-TRL
Hersteller: IXYS
Description: SCR 1.2KV 7.8A TO-252AA
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 7.8 A
Part Status: Active
Supplier Device Package: TO-252AA
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Current - On State (It (AV)) (Max): 5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 150°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CLA5E1200UC-TRL Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251
CLA5E1200UC-TRL
Hersteller: IXYS
Description: SCR 1.2KV 7.8A TO-252AA
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 7.8 A
Part Status: Active
Supplier Device Package: TO-252AA
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Current - On State (It (AV)) (Max): 5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 150°C
auf Bestellung 2422 Stücke:
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AnzahlPrivatkunde
4+6.83 EUR
10+4.46 EUR
100+3.13 EUR
500+2.56 EUR
1000+2.37 EUR
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DHG40B1200LB-TUB
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Average Rectified (Io): 34 A
Voltage - Peak Reverse (Max): 1.2 kV
Part Status: Active
Supplier Device Package: 9-SMPD-B
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tube
Produkt ist nicht verfügbar
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IXFQ80N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Produkt ist nicht verfügbar
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S6X8BBS3RP littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552
S6X8BBS3RP
Hersteller: IXYS
Description: SCR 600V 800MA SOT-23-3
Current - On State (It (RMS)) (Max): 800 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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S6X8BBS3RP littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552
S6X8BBS3RP
Hersteller: IXYS
Description: SCR 600V 800MA SOT-23-3
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 800 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 10 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1025 Stücke:
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AnzahlPrivatkunde
13+1.65 EUR
21+1.04 EUR
100+0.68 EUR
500+0.51 EUR
1000+0.46 EUR
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DMA30P1200HB media?resourcetype=datasheets&itemid=9e8e9c31-8e39-46b5-8db7-7500dfb48089&filename=littelfuse-power-semiconductors-dma30p1200hb-datasheet
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 (IXTH)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Produkt ist nicht verfügbar
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MKH17RP650DCGL-TUB
Hersteller: IXYS
Description: MKH17RP650DCGLB-TUB
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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MKH24I650HR media?resourcetype=datasheets&itemid=7a052698-ad25-450e-a21d-07ac16a73f21&filename=littelfuse_discrete_mosfets_n-channel_super_junction_mkh24i650hr_datasheet.pdf
Hersteller: IXYS
Description: DISCMSFT NCHSUPRJUNCCFD-CLS ISO2
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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S6X8TS3RP sxx8xsx-ev-series-datasheet?assetguid=33D0D5E7-46FD-406D-80AE-F94899E78783
S6X8TS3RP
Hersteller: IXYS
Description: SCR 800V 800MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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S6X8TS3RP sxx8xsx-ev-series-datasheet?assetguid=33D0D5E7-46FD-406D-80AE-F94899E78783
S6X8TS3RP
Hersteller: IXYS
Description: SCR 800V 800MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
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CNA30E2200FB media?resourcetype=datasheets&itemid=03d6ed5c-1cb4-41e7-980c-aaa0d075ef37&filename=Littelfuse-Power-Semiconductors-CNA30E2200FB-Datasheet
CNA30E2200FB
Hersteller: IXYS
Description: SCR 2.2KV 47A I4-PAC
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 47 A
Part Status: Active
Supplier Device Package: ISOPLUS i4-PAC™
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 3 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 30 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -10°C ~ 70°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Packaging: Tube
Produkt ist nicht verfügbar
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LGD8201TH
Hersteller: IXYS
Description: DPAK, IGBT3
Power - Max: 125 W
Current - Collector Pulsed (Icm): 50 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LGB8204ATH media?resourcetype=datasheets&itemid=ef372b67-c6a1-42f9-a56c-a2c35c882046&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgb8204ath_datasheet.pdf
LGB8204ATH
Hersteller: IXYS
Description: D2PAK, IGBT3
Power - Max: 115 W
Current - Collector Pulsed (Icm): 50 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LST3205EL2CT2
Hersteller: IXYS
Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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GWM120-0075P3-SMD SAM GWM120-0075P3.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GWM120-0075X1-SMDSAM GWM120-0075X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Produkt ist nicht verfügbar
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