IXTA8N70X2 IXYS
Hersteller: IXYS
Description: MOSFET N-CHANNEL 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.27 EUR |
| 50+ | 4.27 EUR |
| 100+ | 3.88 EUR |
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Technische Details IXTA8N70X2 IXYS
Description: MOSFET N-CHANNEL 700V 8A TO220-3, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IXTA8N70X2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXTA8N70X2 | IXYS |
MOSFETs 700V/8A Ultra Junct X2-Class MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA8N70X2 |
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Hersteller: IXYS
MOSFETs 700V/8A Ultra Junct X2-Class MOSFET
MOSFETs 700V/8A Ultra Junct X2-Class MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

