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IXTA8N70X2

IXTA8N70X2 IXYS


IXTA(P,U,Y)8N70X2.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTA8N70X2 IXYS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 8A, Power dissipation: 150W, Case: TO263, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 12nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 200ns, Anzahl je Verpackung: 1 Stücke.

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IXTA8N70X2 IXTA8N70X2 Hersteller : IXYS ixys_s_a0005444840_1-2272752.pdf MOSFET 700V/8A Ultra Junct X2-Class MOSFET
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IXTA8N70X2 IXTA8N70X2 Hersteller : IXYS IXTA(P,U,Y)8N70X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar