IXTN500N20X4 IXYS
Hersteller: IXYS
Description: Ultra Junction X4-Class Power
Power Dissipation (Max): 1150W (Tc)
Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B - miniBLOC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTN500N20X4 IXYS
Description: Ultra Junction X4-Class Power, Power Dissipation (Max): 1150W (Tc), Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 500A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B - miniBLOC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Packaging: Tube.
Weitere Produktangebote IXTN500N20X4 nach Preis ab 60.54 EUR bis 84.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXTN500N20X4 | Hersteller : IXYS |
MOSFET Modules 200V 1.99mohm 500A Ultra Junction X4-Class Power MOSFET in SOT-227B |
auf Bestellung 452 Stücke: Lieferzeit 10-14 Tag (e) |
|

