IXTN500N20X4 IXYS
Hersteller: IXYSDescription: Ultra Junction X4-Class Power
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B - miniBLOC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 65.63 EUR |
| 10+ | 49.21 EUR |
| 100+ | 45.29 EUR |
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Technische Details IXTN500N20X4 IXYS
Description: Ultra Junction X4-Class Power, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500A (Tc), Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V, Power Dissipation (Max): 1150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B - miniBLOC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V.
Weitere Produktangebote IXTN500N20X4 nach Preis ab 60.54 EUR bis 73.09 EUR
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IXTN500N20X4 | Hersteller : IXYS |
MOSFET Modules 200V 1.99mohm 500A Ultra Junction X4-Class Power MOSFET in SOT-227B |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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