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IXYA55N65B5 IXYS


Power_Semiconductor_Discrete_IGBT_IXYA55N65B5_Datasheet.pdf
Hersteller: IXYS
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.99 EUR
10+9.56 EUR
100+7.27 EUR
500+6.81 EUR
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Technische Details IXYA55N65B5 IXYS

Description: IGBT TRENCH FS 650V 122A TO-263, Power - Max: 395 W, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Current - Collector Pulsed (Icm): 250 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 122 A, Gate Charge: 130 nC, Test Condition: 300V, 25A, 5Ohm, 15V, Switching Energy: 550µJ (on), 600µJ (off), Td (on/off) @ 25°C: 20ns/200ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-263 (D2Pak), Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ).

Weitere Produktangebote IXYA55N65B5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXYA55N65B5 IXYA55N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Description: IGBT TRENCH FS 650V 122A TO-263
Power - Max: 395 W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 122 A
Gate Charge: 130 nC
Test Condition: 300V, 25A, 5Ohm, 15V
Switching Energy: 550µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 20ns/200ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA55N65B5 IXYA55N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXYA55N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf
Hersteller: IXYS
Description: IGBT TRENCH FS 650V 122A TO-263
Power - Max: 395 W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 122 A
Gate Charge: 130 nC
Test Condition: 300V, 25A, 5Ohm, 15V
Switching Energy: 550µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 20ns/200ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA55N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH