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IXYA55N65B5

IXYA55N65B5 IXYS


Power_Semiconductor_Discrete_IGBT_IXYA55N65B5_Datasheet.pdf
Hersteller: IXYS
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
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Lieferzeit 10-14 Tag (e)
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1+12.6 EUR
10+8.03 EUR
100+6.11 EUR
500+5.72 EUR
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Technische Details IXYA55N65B5 IXYS

Description: IGBT TRENCH FS 650V 122A TO-263, Power - Max: 395 W, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Current - Collector Pulsed (Icm): 250 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 122 A, Gate Charge: 130 nC, Test Condition: 300V, 25A, 5Ohm, 15V, Switching Energy: 550µJ (on), 600µJ (off), Td (on/off) @ 25°C: 20ns/200ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-263 (D2Pak), Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ).

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IXYA55N65B5 IXYA55N65B5 Hersteller : IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Description: IGBT TRENCH FS 650V 122A TO-263
Power - Max: 395 W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 122 A
Gate Charge: 130 nC
Test Condition: 300V, 25A, 5Ohm, 15V
Switching Energy: 550µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 20ns/200ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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