Technische Details IXTN400N20X4 IXYS
Description: Ultra Junction X4-Class Power, Input Capacitance (Ciss) (Max) @ Vds: 27700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 348 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B - miniBLOC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 340A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXTN400N20X4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| IXTN400N20X4 | Hersteller : IXYS |
Description: Ultra Junction X4-Class Power Input Capacitance (Ciss) (Max) @ Vds: 27700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 348 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B - miniBLOC Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 340A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
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