| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXYT12N250CV1HV | IXYS |
Description: IGBT 2500V 28A TO268HVPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-268HV (IXYT) Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
Produkt ist nicht verfügbar |
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IXYA12N250CHV | IXYS |
Description: DISC IGBT XPT-HI VOLTAGE TO-263DPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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W2865HA680 | IXYS |
Description: DIODE STANDARD 6800V 4825A W121Packaging: Box Package / Case: DO-200AD Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 53 µs Technology: Standard Current - Average Rectified (Io): 4825A Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 6800 V Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A Current - Reverse Leakage @ Vr: 100 mA @ 6800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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W2865HA720 | IXYS |
Description: DIODE STANDARD 7200V 4825A W121Packaging: Box Package / Case: DO-200AD Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 53 µs Technology: Standard Current - Average Rectified (Io): 4825A Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 7200 V Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A Current - Reverse Leakage @ Vr: 100 mA @ 7200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFA6N120P-TRL | IXYS |
Description: MOSFET N-CH 1200V 6A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V |
Produkt ist nicht verfügbar |
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QV6012NH4RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
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QV6012NH4RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
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QV6012NH5RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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QV6012NH5RP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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QV6012RH5TP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA10P15T-TRL | IXYS |
Description: MOSFET P-CH 150V 10A TO263 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V Power Dissipation (Max): 83W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA10P15T | IXYS |
Description: MOSFET P-CH 150V 10A TO263Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V Power Dissipation (Max): 83W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CLA15E1200NPZ-TUB | IXYS |
Description: SCR 1.2KV 33A TO-263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 70 mA Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - On State (It (AV)) (Max): 15 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.35 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 33 A Voltage - Off State: 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CLA15E1200NPZ-TRL | IXYS |
Description: SCR 1.2KV 33A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 70 mA Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - On State (It (AV)) (Max): 15 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.35 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 33 A Voltage - Off State: 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXKH47N60CC3 | IXYS |
Description: MOSFET N-CH 600V 47A TO247AD Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFH60N20F | IXYS |
Description: MOSFET N-CH 60A TO247 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFT60N20F | IXYS |
Description: MOSFET N-CH 60A TO268 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFT60N20 | IXYS |
Description: MOSFET N-CH 60A TO268 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFP12N65X2A | IXYS |
Description: MOSFET N-CH TO220 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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MKE38RK600DFEL-TUB | IXYS |
Description: MOSFET N-CH 600V 50A SMPDPackaging: Tube Package / Case: 9-SMD Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: ISOPLUS-SMPD™.B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXFT21N50 | IXYS |
Description: MOSFET N-CH 21A TO268 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFT21N50F | IXYS |
Description: MOSFET N-CH 21A TO268 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXTU4N60P | IXYS |
Description: MOSFET N-CH TO251 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXKK85N60CC3 | IXYS |
Description: MOSFET N-CH 600V 85A TO264A Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| N2825TJ450 | IXYS |
Description: SCR 4.5KV 5520A W81 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz Current - On State (It (AV)) (Max): 2825 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 3.37 V Current - Off State (Max): 250 mA Supplier Device Package: W81 Current - On State (It (RMS)) (Max): 5520 A Voltage - Off State: 4.5 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| W1185LC450 | IXYS |
Description: DIODE GEN PURP 4.5KV 1185A W4Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1185A Supplier Device Package: W4 Operating Temperature - Junction: -55°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 4500 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A Current - Reverse Leakage @ Vr: 30 mA @ 4500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFK40N50Q2 | IXYS |
Description: MOSFET N-CH 40A TO264 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFM12N90Q | IXYS |
Description: MOSFET N-CH 900V 12A TO-204AA Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXTY26P10T-TRL | IXYS |
Description: MOSFET P-CH 100V 26A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IX526119 | IXYS |
Description: ITF40PF1200DHGTLB-TRR Packaging: Tape & Reel (TR) |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IX526112 | IXYS |
Description: ITF40PF1200DHGTLB-TUB Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DPG30IM300PC-TUB | IXYS |
Description: DIODE GEN PURP 300V 30A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 42pF @ 150V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DPG30IM400PC-TUB | IXYS |
Description: DIODE GEN PURP 400V 30A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 200V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
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DPG30IM300PC-TRL | IXYS |
Description: DIODE GEN PURP 300V 30A TO263AAPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 42pF @ 150V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DPG30IM400PC-TRL | IXYS |
Description: DIODE GEN PURP 400V 30A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 200V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
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DPG30I600PM | IXYS |
Description: DIODE GP 600V 15A TO220ACFPPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 26pF @ 400V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXTP03N90P | IXYS |
Description: MOSFET N-CH TO220AB Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXTY03N90PHV | IXYS |
Description: MOSFET N-CH TO252AA Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFH28N50F | IXYS |
Description: MOSFET N-CH 28A TO247 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFT28N50F | IXYS |
Description: MOSFET N-CH 28A TO268 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXFT40N30 | IXYS |
Description: MOSFET N-CH 40A TO268 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXTA36N30P-PDP | IXYS |
Description: MOSFET N-CH TO263 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFN55N120SK | IXYS |
Description: SIC AND MULTICHIP DISCRETEPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 3.6V @ 12mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V |
auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA340N04T4-TRL | IXYS |
Description: MOSFET N-CH TO263 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXTS01N90P-89 | IXYS |
Description: MOSFET N-CH SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXTS01N90P-223 | IXYS |
Description: MOSFET N-CH SMD Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DMA10P1600PZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
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DMA10P1600PZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HVPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
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DMA10IM1600PZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DMA30IM1600PZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 30A TO263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DMA10IM1600PZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO263HVPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DMA30IM1600PZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 30A TO263HVPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| CMA50E1600TZ-TRL | IXYS |
Description: SCR 1.6KV 79A TO268AAPackaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.3 V Supplier Device Package: TO-268AA (D3Pak-HV) Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CMA50E1600TZ-TUB | IXYS |
Description: SCR 1.6KV 79A TO268AAPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.3 V Supplier Device Package: TO-268AA (D3Pak-HV) Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFK1801 | IXYS |
Description: MOSFET N-CH 18A TO264 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MITA300RF1700P-PC | IXYS |
Description: IGBT MOD MITA300RF1700PTED-PCPackaging: Box |
Produkt ist nicht verfügbar |
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| IXTM13N80 | IXYS |
Description: MOSFET N-CH TO-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| N2154JK020 | IXYS |
Description: SCR 200V 4190A WP1Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - On State (It (AV)) (Max): 2154 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.58 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 4190 A Voltage - Off State: 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| N2154JK040 | IXYS |
Description: SCR 400V 4190A WP1Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - On State (It (AV)) (Max): 2154 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.58 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 4190 A Voltage - Off State: 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| N2154JK060 | IXYS |
Description: SCR 600V 4190A WP1Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz Current - On State (It (AV)) (Max): 2154 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.58 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 4190 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYT12N250CV1HV |
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Hersteller: IXYS
Description: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA12N250CHV |
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Hersteller: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| W2865HA680 |
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Hersteller: IXYS
Description: DIODE STANDARD 6800V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Description: DIODE STANDARD 6800V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| W2865HA720 |
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Hersteller: IXYS
Description: DIODE STANDARD 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
Description: DIODE STANDARD 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA6N120P-TRL |
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Hersteller: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| QV6012NH4RP |
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Hersteller: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| QV6012NH4RP |
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Hersteller: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.53 EUR |
| 10+ | 4.31 EUR |
| 100+ | 3.04 EUR |
| QV6012NH5RP |
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Hersteller: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 2.52 EUR |
| QV6012NH5RP |
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Hersteller: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.58 EUR |
| 10+ | 4.34 EUR |
| 100+ | 3.07 EUR |
| QV6012RH5TP |
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Hersteller: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.09 EUR |
| 10+ | 4 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 2.14 EUR |
| IXTA10P15T-TRL |
Hersteller: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA10P15T |
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Hersteller: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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| CLA15E1200NPZ-TUB |
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Hersteller: IXYS
Description: SCR 1.2KV 33A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 33A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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| CLA15E1200NPZ-TRL |
![]() |
Hersteller: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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| MKE38RK600DFEL-TUB |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| N2825TJ450 |
Hersteller: IXYS
Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
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| W1185LC450 |
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Hersteller: IXYS
Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
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| IXTY26P10T-TRL |
Hersteller: IXYS
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Produkt ist nicht verfügbar
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| IX526119 |
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 32.17 EUR |
| DPG30IM300PC-TUB |
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Hersteller: IXYS
Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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| DPG30IM400PC-TUB |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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| DPG30IM300PC-TRL |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE GEN PURP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
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| DPG30IM400PC-TRL |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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| DPG30I600PM |
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Hersteller: IXYS
Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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| IXFN55N120SK |
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Hersteller: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 81.38 EUR |
| 10+ | 75.66 EUR |
| DMA10P1600PZ-TUB |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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| DMA10P1600PZ-TRL |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DMA10IM1600PZ-TUB |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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| DMA30IM1600PZ-TUB |
![]() |
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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| DMA10IM1600PZ-TRL |
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Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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| DMA30IM1600PZ-TRL |
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Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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| CMA50E1600TZ-TRL |
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Hersteller: IXYS
Description: SCR 1.6KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
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| CMA50E1600TZ-TUB |
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Hersteller: IXYS
Description: SCR 1.6KV 79A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 79A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 9.16 EUR |
| N2154JK020 |
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Hersteller: IXYS
Description: SCR 200V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 200 V
Description: SCR 200V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 200 V
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| N2154JK040 |
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Hersteller: IXYS
Description: SCR 400V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 400 V
Description: SCR 400V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 400 V
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| N2154JK060 |
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Hersteller: IXYS
Description: SCR 600V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 600 V
Description: SCR 600V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 600 V
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