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IXFT24N90P IXFT24N90P IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 419 Stücke:
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IXTH1N200P3HV IXTH1N200P3HV IXYS littelfuse-discrete-mosfets-ixt-1n200p3-datasheet?assetguid=4b665d05-b45e-49d5-b5cb-2feb07396528 Description: MOSFET N-CH 2000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Produkt ist nicht verfügbar
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IX3407BTR IX3407BTR IXYS Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 2000 Stücke:
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IX3407BTR IX3407BTR IXYS Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 2086 Stücke:
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10+3.14 EUR
100+2.18 EUR
500+1.85 EUR
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IXTK120N65X2 IXTK120N65X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 45 Stücke:
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IXFH60N50P3 IXFH60N50P3 IXYS DS100311BIXFHFTFQ60N50P3.pdf Description: MOSFET N-CH 500V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
auf Bestellung 403 Stücke:
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30+10.44 EUR
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IXFH56N30X3 IXFH56N30X3 IXYS littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758 Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 4142 Stücke:
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30+10.34 EUR
120+8.82 EUR
510+8.29 EUR
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IXFX160N30T IXFX160N30T IXYS DS100127AIXFKFX160N30T.pdf Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 437 Stücke:
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IXFK160N30T IXFK160N30T IXYS DS100127AIXFKFX160N30T.pdf Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 2036 Stücke:
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25+19.55 EUR
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IXFK48N50 IXFK48N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4 Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT24N90P-TRL IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP15N50L2 IXTP15N50L2 IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 158 Stücke:
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2+16.4 EUR
50+9.17 EUR
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IXTA15N50L2-TRL IXTA15N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Description: MOSFET N-CH 500V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY48P05T IXTY48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
auf Bestellung 120 Stücke:
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IXTA24P085T IXTA24P085T IXYS littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98 Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
Produkt ist nicht verfügbar
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IXFK44N80P IXFK44N80P IXYS littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 74 Stücke:
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IXFH24N80P IXFH24N80P IXYS IXFH24N80P.pdf Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 608 Stücke:
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120+10.31 EUR
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IXFR44N80P IXFR44N80P IXYS DS99504EIXFR44N80P.pdf Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX44N80P IXFX44N80P IXYS littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 280 Stücke:
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IXTX110N20L2 IXTX110N20L2 IXYS DS100195IXTKTX110N20L2.pdf Description: MOSFET N-CH 200V 110A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 1128 Stücke:
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IXTK110N20L2 IXTK110N20L2 IXYS DS100195IXTKTX110N20L2.pdf Description: MOSFET N-CH 200V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK90N25L2 IXTK90N25L2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B Description: MOSFET N-CH 250V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.85 EUR
25+34.79 EUR
100+33.79 EUR
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IXFK320N17T2 IXFK320N17T2 IXYS DS100188IXFKFX320N17T2.pdf Description: MOSFET N-CH 170V 320A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
auf Bestellung 432 Stücke:
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IXFH44N50P IXFH44N50P IXYS DS99366FIXFHFTFK44N50P.pdf description Description: MOSFET N-CH 500V 44A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY02N120P-TRL IXTY02N120P-TRL IXYS littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA36P15P-TRL IXTA36P15P-TRL IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+5.2 EUR
Mindestbestellmenge: 800
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IXTA36P15P-TRL IXTA36P15P-TRL IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 6086 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.11 EUR
10+8.24 EUR
100+6.36 EUR
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IXTA52P10P-TRL IXTA52P10P-TRL IXYS littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+5.2 EUR
Mindestbestellmenge: 800
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IXTA52P10P-TRL IXTA52P10P-TRL IXYS littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1120 Stücke:
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10+8.24 EUR
100+6.36 EUR
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IXTA26P20P-TRL IXTA26P20P-TRL IXYS littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA26P20P-TRL IXTA26P20P-TRL IXYS littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.21 EUR
Mindestbestellmenge: 2
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IXTA06N120P-TRL IXTA06N120P-TRL IXYS littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7 Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.16 EUR
1600+3.15 EUR
Mindestbestellmenge: 800
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IXTA06N120P-TRL IXTA06N120P-TRL IXYS littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7 Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 6703 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.24 EUR
10+5.55 EUR
100+3.97 EUR
Mindestbestellmenge: 3
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IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.16 EUR
Mindestbestellmenge: 800
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IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 1803 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.5 EUR
10+6.67 EUR
100+5.09 EUR
Mindestbestellmenge: 3
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IXTK22N100L IXTK22N100L IXYS DS99293DIXTKTX22N100L.pdf Description: MOSFET N-CH 1000V 22A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX20N120P IXFX20N120P IXYS littelfuse-discrete-mosfets-ixf-20n120p-datasheet?assetguid=e6809744-4588-43ea-a419-5e983248ea7f Description: MOSFET N-CH 1200V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.89 EUR
30+27.08 EUR
120+25.8 EUR
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IXSH20N120L2KHV IXSH20N120L2KHV IXYS power-semiconductor-sic-mosfet-ixsh20n120l2khv-datasheet?assetguid=e179c676-7e7f-445c-976f-ac44912d8246 Description: 1200V 60M (20A @25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.52 EUR
10+6.39 EUR
Mindestbestellmenge: 2
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IXSA20N120L2-7TR IXSA20N120L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7 Description: 1200V 60M (20A @25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
Produkt ist nicht verfügbar
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IXSA20N120L2-7TR IXSA20N120L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7 Description: 1200V 60M (20A @25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.98 EUR
10+6.72 EUR
100+4.91 EUR
Mindestbestellmenge: 2
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IXTA130N10T IXTA130N10T IXYS littelfuse-discrete-mosfets-ixt-130n10t-1of2-datasheet?assetguid=35a29cb3-cabc-48a7-80a0-8b3ad9bec8fb Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
50+4.45 EUR
100+4.06 EUR
500+3.38 EUR
Mindestbestellmenge: 3
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IXFA130N10T2 IXFA130N10T2 IXYS littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3 Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
auf Bestellung 240 Stücke:
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IXFH230N10T IXFH230N10T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH230N10T-Datasheet.PDF?assetguid=8D6653DE-0CEB-4D29-BB26-5DD40921D115 Description: MOSFET N-CH 100V 230A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA130N10T2-TRL IXFA130N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3 Description: MOSFET N-CH 100V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP32P20T IXTP32P20T IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P20T-Datasheet.PDF?assetguid=41EE09BF-5ADB-4340-95F0-9B4C12E513EA Description: MOSFET P-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
auf Bestellung 407 Stücke:
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IXFK140N20P IXFK140N20P IXYS 99219.pdf Description: MOSFET N-CH 200V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 300 Stücke:
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IXFA38N30X3 IXFA38N30X3 IXYS littelfuse-discrete-mosfets-ixf-38n30x3-datasheet?assetguid=bf5a0d57-37da-484a-a94b-aa873a26c7d4 Description: MOSFET N-CH 300V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT38N30L2HV IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_38n30_datasheet.pdf?assetguid=44323f9e-8bfe-42f4-980e-ab8e12213bb6 Description: MOSFET N-CH 300V 38A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 19A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXKC20N60C IXKC20N60C IXYS Description: MOSFET N-CH 600V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT120N30X3HV IXFT120N30X3HV IXYS littelfuse-discrete-mosfets-ixf-120n30x3-datasheet?assetguid=a6aee090-17b8-48bf-a452-f0160a553826 Description: MOSFET N-CH 300V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 118 Stücke:
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IXTH120N20X4 IXTH120N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth120n20x4-datasheet?assetguid=8536ac9b-7498-445b-9d59-b42a274a3c4e Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
auf Bestellung 220 Stücke:
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IXTT220N20X4HV IXTT220N20X4HV IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtt220n20x4hv-datasheet?assetguid=198ffe7f-584b-44cf-b82f-685f31233027 Description: MOSFET N-CH 200V 220A X4 TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
auf Bestellung 840 Stücke:
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1+29.41 EUR
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120+16.49 EUR
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IXTH220N20X4 IXTH220N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth220n20x4-datasheet?assetguid=06313bbe-84ef-4deb-8e74-35cd13460d56 Description: MOSFET N-CH 200V 220A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
auf Bestellung 1085 Stücke:
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IXTP80N075L2 IXTP80N075L2 IXYS littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880 Description: MOSFET N-CH 75V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 750 Stücke:
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IXTP80N12T2 IXTP80N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_80n12t2_datasheet.pdf?assetguid=179b90c7-53dd-480f-a46b-1d7b2ae9347e Description: MOSFET N-CH 120V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
auf Bestellung 600 Stücke:
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DCG160X650NA DCG160X650NA IXYS littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd Description: DIODE MOD SIC 650V 80A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Produkt ist nicht verfügbar
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R1448NC20H R1448NC20H IXYS LittelfuseDiscreteThyristorsFastThyristorsR1448NC20DatasheetPDF.pdf Description: SCR 2KV 2916A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Current - On State (It (AV)) (Max): 1448 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.35 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2916 A
Voltage - Off State: 2 kV
auf Bestellung 18 Stücke:
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IXTP36P15P IXTP36P15P IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 459 Stücke:
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IXTA36P15P IXTA36P15P IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 1242 Stücke:
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2+12.11 EUR
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100+6.04 EUR
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IXTP15P15T IXTP15P15T IXYS littelfusediscretemosfetspchannelixt15p15td.pdf Description: MOSFET P-CH 150V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
auf Bestellung 280 Stücke:
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5+3.63 EUR
50+3.42 EUR
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IXFT24N90P littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
IXFT24N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 419 Stücke:
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Anzahl Preis
1+27.47 EUR
30+17.1 EUR
120+15.08 EUR
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IXTH1N200P3HV littelfuse-discrete-mosfets-ixt-1n200p3-datasheet?assetguid=4b665d05-b45e-49d5-b5cb-2feb07396528
IXTH1N200P3HV
Hersteller: IXYS
Description: MOSFET N-CH 2000V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Produkt ist nicht verfügbar
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IX3407BTR
IX3407BTR
Hersteller: IXYS
Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.64 EUR
2000+1.52 EUR
Mindestbestellmenge: 1000
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IX3407BTR
IX3407BTR
Hersteller: IXYS
Description: ISOLATED GATE DRIVER, 7A, SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Common Mode Transient Immunity (Min): 150kV/µs (Max)
Propagation Delay tpLH / tpHL (Max): 247ns, 261ns
Pulse Width Distortion (Max): 27ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 2086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.82 EUR
10+3.14 EUR
100+2.18 EUR
500+1.85 EUR
Mindestbestellmenge: 4
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IXTK120N65X2 ixty2n65x2.pdf
IXTK120N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.07 EUR
25+24.87 EUR
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IXFH60N50P3 DS100311BIXFHFTFQ60N50P3.pdf
IXFH60N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.44 EUR
30+10.44 EUR
120+8.9 EUR
Mindestbestellmenge: 2
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IXFH56N30X3 littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758
IXFH56N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.27 EUR
30+10.34 EUR
120+8.82 EUR
510+8.29 EUR
Mindestbestellmenge: 2
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IXFX160N30T DS100127AIXFKFX160N30T.pdf
IXFX160N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.22 EUR
30+19 EUR
120+17.08 EUR
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IXFK160N30T DS100127AIXFKFX160N30T.pdf
IXFK160N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.47 EUR
25+19.55 EUR
100+17.25 EUR
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IXFK48N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4
IXFK48N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT24N90P-TRL littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
Hersteller: IXYS
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP15N50L2 littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTP15N50L2
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.4 EUR
50+9.17 EUR
100+8.47 EUR
Mindestbestellmenge: 2
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IXTA15N50L2-TRL littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTA15N50L2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTY48P05T
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.64 EUR
70+3.79 EUR
Mindestbestellmenge: 3
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IXTA24P085T littelfuse-discrete-mosfets-ixt-24p085t-datasheet?assetguid=80866686-ffb0-4146-82b9-23bb12b38a98
IXTA24P085T
Hersteller: IXYS
Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
Produkt ist nicht verfügbar
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IXFK44N80P littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce
IXFK44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 44A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.97 EUR
25+21.98 EUR
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IXFH24N80P IXFH24N80P.pdf
IXFH24N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.89 EUR
30+12.03 EUR
120+10.31 EUR
510+9.93 EUR
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IXFR44N80P DS99504EIXFR44N80P.pdf
IXFR44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX44N80P littelfuse-discrete-mosfets-ixf-44n80p-datasheet?assetguid=0308fa86-41d8-447d-92c9-57e0fcffa0ce
IXFX44N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.88 EUR
30+21.49 EUR
120+19.72 EUR
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IXTX110N20L2 DS100195IXTKTX110N20L2.pdf
IXTX110N20L2
Hersteller: IXYS
Description: MOSFET N-CH 200V 110A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 1128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.33 EUR
30+35.96 EUR
120+35.83 EUR
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IXTK110N20L2 DS100195IXTKTX110N20L2.pdf
IXTK110N20L2
Hersteller: IXYS
Description: MOSFET N-CH 200V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK90N25L2 Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-90N25-Datasheet.PDF?assetguid=85B50793-C43C-4B40-A84C-3DCCA3D22A7B
IXTK90N25L2
Hersteller: IXYS
Description: MOSFET N-CH 250V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.85 EUR
25+34.79 EUR
100+33.79 EUR
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IXFK320N17T2 DS100188IXFKFX320N17T2.pdf
IXFK320N17T2
Hersteller: IXYS
Description: MOSFET N-CH 170V 320A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.97 EUR
25+31.27 EUR
100+29.87 EUR
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IXFH44N50P description DS99366FIXFHFTFK44N50P.pdf
IXFH44N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY02N120P-TRL littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0
IXTY02N120P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA36P15P-TRL littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTA36P15P-TRL
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.2 EUR
Mindestbestellmenge: 800
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IXTA36P15P-TRL littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTA36P15P-TRL
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 6086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.11 EUR
10+8.24 EUR
100+6.36 EUR
Mindestbestellmenge: 2
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IXTA52P10P-TRL littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b
IXTA52P10P-TRL
Hersteller: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.2 EUR
Mindestbestellmenge: 800
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IXTA52P10P-TRL littelfuse-discrete-mosfets-ixt-52p10p-datasheet?assetguid=b047fbe5-952b-40c8-bfa0-176e9733db4b
IXTA52P10P-TRL
Hersteller: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.13 EUR
10+8.24 EUR
100+6.36 EUR
Mindestbestellmenge: 2
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IXTA26P20P-TRL littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a
IXTA26P20P-TRL
Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA26P20P-TRL littelfuse-discrete-mosfets-ixt-26p20p-datasheet?assetguid=2195210b-d8e6-4e3f-b910-12b7e438e63a
IXTA26P20P-TRL
Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.21 EUR
Mindestbestellmenge: 2
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IXTA06N120P-TRL littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7
IXTA06N120P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.16 EUR
1600+3.15 EUR
Mindestbestellmenge: 800
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IXTA06N120P-TRL littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7
IXTA06N120P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 6703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
10+5.55 EUR
100+3.97 EUR
Mindestbestellmenge: 3
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IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4.16 EUR
Mindestbestellmenge: 800
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IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 1803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.5 EUR
10+6.67 EUR
100+5.09 EUR
Mindestbestellmenge: 3
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IXTK22N100L DS99293DIXTKTX22N100L.pdf
IXTK22N100L
Hersteller: IXYS
Description: MOSFET N-CH 1000V 22A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX20N120P littelfuse-discrete-mosfets-ixf-20n120p-datasheet?assetguid=e6809744-4588-43ea-a419-5e983248ea7f
IXFX20N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.89 EUR
30+27.08 EUR
120+25.8 EUR
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IXSH20N120L2KHV power-semiconductor-sic-mosfet-ixsh20n120l2khv-datasheet?assetguid=e179c676-7e7f-445c-976f-ac44912d8246
IXSH20N120L2KHV
Hersteller: IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.52 EUR
10+6.39 EUR
Mindestbestellmenge: 2
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IXSA20N120L2-7TR power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7
IXSA20N120L2-7TR
Hersteller: IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
Produkt ist nicht verfügbar
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IXSA20N120L2-7TR power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7
IXSA20N120L2-7TR
Hersteller: IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.98 EUR
10+6.72 EUR
100+4.91 EUR
Mindestbestellmenge: 2
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IXTA130N10T littelfuse-discrete-mosfets-ixt-130n10t-1of2-datasheet?assetguid=35a29cb3-cabc-48a7-80a0-8b3ad9bec8fb
IXTA130N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
50+4.45 EUR
100+4.06 EUR
500+3.38 EUR
Mindestbestellmenge: 3
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IXFA130N10T2 littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3
IXFA130N10T2
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.56 EUR
50+5.07 EUR
100+4.64 EUR
Mindestbestellmenge: 2
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IXFH230N10T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXFH230N10T-Datasheet.PDF?assetguid=8D6653DE-0CEB-4D29-BB26-5DD40921D115
IXFH230N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 230A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA130N10T2-TRL littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3
IXFA130N10T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP32P20T Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P20T-Datasheet.PDF?assetguid=41EE09BF-5ADB-4340-95F0-9B4C12E513EA
IXTP32P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
auf Bestellung 407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.87 EUR
50+8.23 EUR
100+7.59 EUR
Mindestbestellmenge: 2
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IXFK140N20P 99219.pdf
IXFK140N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.17 EUR
25+16.58 EUR
100+14.3 EUR
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IXFA38N30X3 littelfuse-discrete-mosfets-ixf-38n30x3-datasheet?assetguid=bf5a0d57-37da-484a-a94b-aa873a26c7d4
IXFA38N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT38N30L2HV littelfuse_discrete_mosfets_n-channel_linear_ixt_38n30_datasheet.pdf?assetguid=44323f9e-8bfe-42f4-980e-ab8e12213bb6
Hersteller: IXYS
Description: MOSFET N-CH 300V 38A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 19A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXKC20N60C
IXKC20N60C
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT120N30X3HV littelfuse-discrete-mosfets-ixf-120n30x3-datasheet?assetguid=a6aee090-17b8-48bf-a452-f0160a553826
IXFT120N30X3HV
Hersteller: IXYS
Description: MOSFET N-CH 300V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.42 EUR
30+19.41 EUR
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IXTH120N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth120n20x4-datasheet?assetguid=8536ac9b-7498-445b-9d59-b42a274a3c4e
IXTH120N20X4
Hersteller: IXYS
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.39 EUR
30+8.79 EUR
120+8.43 EUR
Mindestbestellmenge: 2
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IXTT220N20X4HV littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtt220n20x4hv-datasheet?assetguid=198ffe7f-584b-44cf-b82f-685f31233027
IXTT220N20X4HV
Hersteller: IXYS
Description: MOSFET N-CH 200V 220A X4 TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.41 EUR
30+18.43 EUR
120+16.49 EUR
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IXTH220N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth220n20x4-datasheet?assetguid=06313bbe-84ef-4deb-8e74-35cd13460d56
IXTH220N20X4
Hersteller: IXYS
Description: MOSFET N-CH 200V 220A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.16 EUR
30+18.27 EUR
120+16.32 EUR
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IXTP80N075L2 littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880
IXTP80N075L2
Hersteller: IXYS
Description: MOSFET N-CH 75V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.24 EUR
50+7.25 EUR
100+6.67 EUR
500+5.84 EUR
Mindestbestellmenge: 2
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IXTP80N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_80n12t2_datasheet.pdf?assetguid=179b90c7-53dd-480f-a46b-1d7b2ae9347e
IXTP80N12T2
Hersteller: IXYS
Description: MOSFET N-CH 120V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+2.42 EUR
Mindestbestellmenge: 300
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DCG160X650NA littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd
DCG160X650NA
Hersteller: IXYS
Description: DIODE MOD SIC 650V 80A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227B
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Produkt ist nicht verfügbar
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R1448NC20H LittelfuseDiscreteThyristorsFastThyristorsR1448NC20DatasheetPDF.pdf
R1448NC20H
Hersteller: IXYS
Description: SCR 2KV 2916A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Current - On State (It (AV)) (Max): 1448 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.35 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2916 A
Voltage - Off State: 2 kV
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1002.81 EUR
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IXTP36P15P littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTP36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.86 EUR
50+6.43 EUR
100+5.91 EUR
Mindestbestellmenge: 2
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IXTA36P15P littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTA36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 1242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.11 EUR
50+6.58 EUR
100+6.04 EUR
500+5.2 EUR
Mindestbestellmenge: 2
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IXTP15P15T littelfusediscretemosfetspchannelixt15p15td.pdf
IXTP15P15T
Hersteller: IXYS
Description: MOSFET P-CH 150V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
50+3.42 EUR
100+3.07 EUR
Mindestbestellmenge: 5
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