Produkte > IXYS > Alle Produkte des Herstellers IXYS (20179) > Seite 102 nach 337

Wählen Sie Seite:   [  << Vorherige Seite ]  1 33 66 97 98 99 100 101 102 103 104 105 106 107 132 165 198 231 264 297 330 337  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
IXTP30N25L2 IXTP30N25L2 IXYS media?resourcetype=datasheets&itemid=8a2ca46a-7756-449e-84fc-309c9a333b9f&filename=littelfuse-discrete-mosfets-n-channel-linear-ixt-30n25l2-datasheet Description: MOSFET N-CH 250V 30A TO220AB
Produkt ist nicht verfügbar
IXTA32P20T-TRL IXTA32P20T-TRL IXYS Description: MOSFET P-CH 200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar
N4340TE180 IXYS Description: SCR 1.8KV 8545A W82
Produkt ist nicht verfügbar
N4340TE220 IXYS Description: SCR 2.2KV 8545A W82
Produkt ist nicht verfügbar
N4340TJ180 IXYS Description: SCR 1.8KV 8545A W81
Produkt ist nicht verfügbar
N4340TJ220 IXYS Description: SCR 2.2KV 8545A W81
Produkt ist nicht verfügbar
DSEP90-12AZ-TUB DSEP90-12AZ-TUB IXYS Description: DIODE GEN PURP 1.2KV 90A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 48pF @ 600V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.2 EUR
10+ 17.65 EUR
IXGK400N30B3 IXGK400N30B3 IXYS Description: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
MDMA60B1200MB IXYS Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Box
Produkt ist nicht verfügbar
MDD72-12N1B MDD72-12N1B IXYS MDD72-12N1B.pdf Description: DIODE MOD GP 1200V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
1+57.53 EUR
36+ 47.7 EUR
IXTQ48N65X2M IXYS Description: DISCRETE MOSFET 48A 650V X2 TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
30+17.56 EUR
Mindestbestellmenge: 30
IXTQ130N20T IXYS Description: MOSFET N-CH 200V 130A TO3P
Produkt ist nicht verfügbar
W2340JK120 IXYS Description: DIODE GEN PURP 1.2KV 2340A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2340A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 1200 V
Produkt ist nicht verfügbar
MCMA260PD1800YB MCMA260PD1800YB IXYS media?resourcetype=datasheets&amp;itemid=214f7e0b-4391-44de-94d9-b2e861640996&amp;filename=littelfuse%2520power%2520semiconductors%2520mcma260pd1800yb%2520datasheet.pdf Description: SCR MODULE 1.8KV 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 260 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 408 A
Voltage - Off State: 1.8 kV
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+168.19 EUR
MCMA200PD1800YB IXYS MCMA200PD1800YB.pdf Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.8 kV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+117.73 EUR
10+ 106.68 EUR
IXTT140N075L2HV-TR IXYS Description: DISC MOSFET N-CH LINEAR L2 TO-26
Produkt ist nicht verfügbar
IXTT140N075L2HV IXYS Description: MOSFET N-CH 75V 140A TO268HV
Produkt ist nicht verfügbar
MCD552-16IO2 IXYS Description: MCD 552 - 16 IO2
Produkt ist nicht verfügbar
DSS16-01AS-TRL DSS16-01AS-TRL IXYS media?resourcetype=datasheets&itemid=9f12db7d-520a-411d-8ce4-abd30d92f84d&filename=power_semiconductor_discrete_diode_dss16-01as_datasheet.pdf Description: DIODE SCHOTTKY 100V 16A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
DNA40U2200GU DNA40U2200GU IXYS media?resourcetype=datasheets&itemid=cf81d105-78b5-47af-93e5-c4b7e07db20a&filename=littelfuse%2520power%2520semiconductors%2520dna40u2200gu%2520datasheet.pdf Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 1506 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.42 EUR
14+ 29.71 EUR
112+ 25.99 EUR
504+ 22.17 EUR
IXTY1N80P-TRL IXYS Description: MOSFET N-CH 800V 1A TO252
Produkt ist nicht verfügbar
MCMA200PD1600YB MCMA200PD1600YB IXYS MCMA200PD1600YB.pdf Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+122.11 EUR
10+ 114.71 EUR
STS802U2SRP IXYS media?resourcetype=datasheets&itemid=c4fba1a9-3d58-4c64-a908-4b7290790f33&filename=littelfuse-thyristor-sts802u2srp-datasheet Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.23 EUR
5000+ 2.14 EUR
Mindestbestellmenge: 2500
STS802U2SRP IXYS media?resourcetype=datasheets&itemid=c4fba1a9-3d58-4c64-a908-4b7290790f33&filename=littelfuse-thyristor-sts802u2srp-datasheet Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 12598 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.58 EUR
10+ 3.85 EUR
100+ 3.11 EUR
500+ 2.77 EUR
1000+ 2.37 EUR
Mindestbestellmenge: 4
IXFT26N100XHV IXFT26N100XHV IXYS Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100935A(IXFT-FH26N100X---HV).pdf Description: MOSFET N-CH 1000V 26A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.74 EUR
10+ 29.72 EUR
IXTA64N10L2-TRL IXTA64N10L2-TRL IXYS Description: MOSFET N-CH 100V 64A TO263
Produkt ist nicht verfügbar
DHG30IM600PC-TUB DHG30IM600PC-TUB IXYS DHG30IM600PC.pdf Description: POWER DIODE DISCRETES-SONIC TO-2
Produkt ist nicht verfügbar
DHG30IM600PC-TRL DHG30IM600PC-TRL IXYS DHG30IM600PC.pdf Description: DIODE GEN PURP 600V 30A TO263
Produkt ist nicht verfügbar
IXYA8N250CHV IXYA8N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf Description: IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.1 EUR
10+ 23.98 EUR
100+ 20.26 EUR
QJ6025LH4TP QJ6025LH4TP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.84 EUR
10+ 10.64 EUR
100+ 8.72 EUR
500+ 7.42 EUR
1000+ 6.33 EUR
Mindestbestellmenge: 2
QJ6025NH4RP QJ6025NH4RP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+7.51 EUR
Mindestbestellmenge: 500
QJ6025NH4RP QJ6025NH4RP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.19 EUR
10+ 10.12 EUR
100+ 8.38 EUR
Mindestbestellmenge: 2
QJ6025RH4TP QJ6025RH4TP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.82 EUR
10+ 9.72 EUR
100+ 7.96 EUR
500+ 6.78 EUR
1000+ 5.78 EUR
Mindestbestellmenge: 2
QJ6025NH4TP QJ6025NH4TP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.6 EUR
10+ 10.47 EUR
100+ 8.67 EUR
500+ 7.55 EUR
1000+ 6.58 EUR
Mindestbestellmenge: 2
IXFT78N60X3HV IXFT78N60X3HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft78n60x3hv_datasheet.pdf.pdf Description: MOSFET ULTRA 600V 78A TO268HV
Produkt ist nicht verfügbar
R0964LC12E IXYS Description: SCR 1.2KV 1971A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10800A @ 50Hz
Current - On State (It (AV)) (Max): 964 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.96 V
Current - Off State (Max): 70 mA
Supplier Device Package: W10
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 1971 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+618.04 EUR
MDC600-22IO1W IXYS Description: MOD BIPOLAR DIODE 2200V
Produkt ist nicht verfügbar
N6012ZD040 IXYS Description: SCR 400MV 11795A W46
Produkt ist nicht verfügbar
IXTP28N15P IXYS Description: MOSFET N-CH TO-220
Produkt ist nicht verfügbar
N3165HA260 IXYS Description: SCR 2.6KV 6230A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - On State (It (AV)) (Max): 3165 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 6230 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
N3165HA280 IXYS Description: SCR 2.8KV 6230A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - On State (It (AV)) (Max): 3165 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 6230 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
MDMA110P1600TG MDMA110P1600TG IXYS MDMA110P1600TG.pdf Description: DIODE MODULE 1.6KV 110A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 110 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
1+70.21 EUR
10+ 64.75 EUR
N2830HE260 IXYS Description: SCR 2.6KV 5585A W80
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - On State (It (AV)) (Max): 2830 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W80
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5585 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
DFE240X600NA DFE240X600NA IXYS media?resourcetype=datasheets&itemid=5feac88a-b7aa-4d9e-91e0-6524932e5d38&filename=littelfuse%2520power%2520semiconductors%2520dfe240x600na%2520datasheet.pdf Description: DIODE MOD GP 600V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
1+62.48 EUR
10+ 55.51 EUR
100+ 48.55 EUR
IXTD3N50P-2J IXYS Description: MOSFET N-CH 500V 3A DIE
Produkt ist nicht verfügbar
IXTM67N10 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt___n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 67A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFM67N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh75n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 67A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFT320N10T2-TRL IXYS Description: MOSFET N-CH 100V 320A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1kW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
STP802U2SRP IXYS media?resourcetype=datasheets&itemid=8bfa922f-512f-4095-bee0-385789b17272&filename=littelfuse-thyristor-stp802u2srp-datasheet Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.16 EUR
5000+ 2.08 EUR
Mindestbestellmenge: 2500
STP802U2SRP IXYS media?resourcetype=datasheets&itemid=8bfa922f-512f-4095-bee0-385789b17272&filename=littelfuse-thyristor-stp802u2srp-datasheet Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 12600 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.28 EUR
Mindestbestellmenge: 4
MCC162-18IO1B MCC162-18IO1B IXYS media?resourcetype=datasheets&amp;itemid=39564359-d67a-4cc3-b2ec-a1b9c4f6f8d0&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc162-14io1b_mcc162-16io1b_mcc162-18io1b_mcd162-16io1b%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
MTC120WX75GD-SMD IXYS Description: IGBT MOD MOSFET SIXPACK ISOPLUS
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
13+57.64 EUR
Mindestbestellmenge: 13
GWM160-0055X1-SMDSAM IXYS GWM160-0055X1.pdf Description: MOSFET 6N-CH 55V 150A ISOPLUS
Produkt ist nicht verfügbar
MCD600-22IO1W IXYS Description: MOD SCR HI POWER 1200V
Produkt ist nicht verfügbar
IXTK210P10T IXYS media?resourcetype=datasheets&itemid=cce7c83f-1d9e-454b-a7cb-d2902cd95200&filename=littelfuse_discrete_mosfets_p-channel_ixt_210p10t_datasheet.pdf Description: MOSFET P-CH -100V -210A TO-264
Packaging: Tube
Produkt ist nicht verfügbar
IXTK3N250L IXYS media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
IXFM15N60 IXYS IXFH,IXFM_15N60,%20IXFH,IXFM_20N60.pdf Description: MOSFET N-CH 600V 15A TO204AE
Produkt ist nicht verfügbar
IXFT52N30Q TRL IXYS IXF(H,K,T)52N30Q.pdf Description: MOSFET N-CH 300V 52A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268 (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
IXFX52N30Q IXYS Description: MOSFET N-CH 300V 52A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Power Dissipation (Max): 360W (Tc)
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
MDD26-18N1B MDD26-18N1B IXYS MDD26-18N1B.pdf Description: DIODE MODULE 1.8KV 36A TO240AA
Produkt ist nicht verfügbar
IXTP30N25L2 media?resourcetype=datasheets&itemid=8a2ca46a-7756-449e-84fc-309c9a333b9f&filename=littelfuse-discrete-mosfets-n-channel-linear-ixt-30n25l2-datasheet
IXTP30N25L2
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO220AB
Produkt ist nicht verfügbar
IXTA32P20T-TRL
IXTA32P20T-TRL
Hersteller: IXYS
Description: MOSFET P-CH 200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar
N4340TE180
Hersteller: IXYS
Description: SCR 1.8KV 8545A W82
Produkt ist nicht verfügbar
N4340TE220
Hersteller: IXYS
Description: SCR 2.2KV 8545A W82
Produkt ist nicht verfügbar
N4340TJ180
Hersteller: IXYS
Description: SCR 1.8KV 8545A W81
Produkt ist nicht verfügbar
N4340TJ220
Hersteller: IXYS
Description: SCR 2.2KV 8545A W81
Produkt ist nicht verfügbar
DSEP90-12AZ-TUB
DSEP90-12AZ-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 90A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 48pF @ 600V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.2 EUR
10+ 17.65 EUR
IXGK400N30B3
IXGK400N30B3
Hersteller: IXYS
Description: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
MDMA60B1200MB
Hersteller: IXYS
Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Box
Produkt ist nicht verfügbar
MDD72-12N1B MDD72-12N1B.pdf
MDD72-12N1B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+57.53 EUR
36+ 47.7 EUR
IXTQ48N65X2M
Hersteller: IXYS
Description: DISCRETE MOSFET 48A 650V X2 TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+17.56 EUR
Mindestbestellmenge: 30
IXTQ130N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 130A TO3P
Produkt ist nicht verfügbar
W2340JK120
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 2340A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2340A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 1200 V
Produkt ist nicht verfügbar
MCMA260PD1800YB media?resourcetype=datasheets&amp;itemid=214f7e0b-4391-44de-94d9-b2e861640996&amp;filename=littelfuse%2520power%2520semiconductors%2520mcma260pd1800yb%2520datasheet.pdf
MCMA260PD1800YB
Hersteller: IXYS
Description: SCR MODULE 1.8KV 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 260 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 408 A
Voltage - Off State: 1.8 kV
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+168.19 EUR
MCMA200PD1800YB MCMA200PD1800YB.pdf
Hersteller: IXYS
Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.8 kV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+117.73 EUR
10+ 106.68 EUR
IXTT140N075L2HV-TR
Hersteller: IXYS
Description: DISC MOSFET N-CH LINEAR L2 TO-26
Produkt ist nicht verfügbar
IXTT140N075L2HV
Hersteller: IXYS
Description: MOSFET N-CH 75V 140A TO268HV
Produkt ist nicht verfügbar
MCD552-16IO2
Hersteller: IXYS
Description: MCD 552 - 16 IO2
Produkt ist nicht verfügbar
DSS16-01AS-TRL media?resourcetype=datasheets&itemid=9f12db7d-520a-411d-8ce4-abd30d92f84d&filename=power_semiconductor_discrete_diode_dss16-01as_datasheet.pdf
DSS16-01AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 16A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
DNA40U2200GU media?resourcetype=datasheets&itemid=cf81d105-78b5-47af-93e5-c4b7e07db20a&filename=littelfuse%2520power%2520semiconductors%2520dna40u2200gu%2520datasheet.pdf
DNA40U2200GU
Hersteller: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 1506 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+33.42 EUR
14+ 29.71 EUR
112+ 25.99 EUR
504+ 22.17 EUR
IXTY1N80P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 800V 1A TO252
Produkt ist nicht verfügbar
MCMA200PD1600YB MCMA200PD1600YB.pdf
MCMA200PD1600YB
Hersteller: IXYS
Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+122.11 EUR
10+ 114.71 EUR
STS802U2SRP media?resourcetype=datasheets&itemid=c4fba1a9-3d58-4c64-a908-4b7290790f33&filename=littelfuse-thyristor-sts802u2srp-datasheet
Hersteller: IXYS
Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.23 EUR
5000+ 2.14 EUR
Mindestbestellmenge: 2500
STS802U2SRP media?resourcetype=datasheets&itemid=c4fba1a9-3d58-4c64-a908-4b7290790f33&filename=littelfuse-thyristor-sts802u2srp-datasheet
Hersteller: IXYS
Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 12598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.58 EUR
10+ 3.85 EUR
100+ 3.11 EUR
500+ 2.77 EUR
1000+ 2.37 EUR
Mindestbestellmenge: 4
IXFT26N100XHV Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100935A(IXFT-FH26N100X---HV).pdf
IXFT26N100XHV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 26A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+33.74 EUR
10+ 29.72 EUR
IXTA64N10L2-TRL
IXTA64N10L2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 64A TO263
Produkt ist nicht verfügbar
DHG30IM600PC-TUB DHG30IM600PC.pdf
DHG30IM600PC-TUB
Hersteller: IXYS
Description: POWER DIODE DISCRETES-SONIC TO-2
Produkt ist nicht verfügbar
DHG30IM600PC-TRL DHG30IM600PC.pdf
DHG30IM600PC-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 600V 30A TO263
Produkt ist nicht verfügbar
IXYA8N250CHV littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf
IXYA8N250CHV
Hersteller: IXYS
Description: IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+26.1 EUR
10+ 23.98 EUR
100+ 20.26 EUR
QJ6025LH4TP
QJ6025LH4TP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.84 EUR
10+ 10.64 EUR
100+ 8.72 EUR
500+ 7.42 EUR
1000+ 6.33 EUR
Mindestbestellmenge: 2
QJ6025NH4RP
QJ6025NH4RP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+7.51 EUR
Mindestbestellmenge: 500
QJ6025NH4RP
QJ6025NH4RP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.19 EUR
10+ 10.12 EUR
100+ 8.38 EUR
Mindestbestellmenge: 2
QJ6025RH4TP
QJ6025RH4TP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.82 EUR
10+ 9.72 EUR
100+ 7.96 EUR
500+ 6.78 EUR
1000+ 5.78 EUR
Mindestbestellmenge: 2
QJ6025NH4TP
QJ6025NH4TP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.6 EUR
10+ 10.47 EUR
100+ 8.67 EUR
500+ 7.55 EUR
1000+ 6.58 EUR
Mindestbestellmenge: 2
IXFT78N60X3HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft78n60x3hv_datasheet.pdf.pdf
IXFT78N60X3HV
Hersteller: IXYS
Description: MOSFET ULTRA 600V 78A TO268HV
Produkt ist nicht verfügbar
R0964LC12E
Hersteller: IXYS
Description: SCR 1.2KV 1971A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10800A @ 50Hz
Current - On State (It (AV)) (Max): 964 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.96 V
Current - Off State (Max): 70 mA
Supplier Device Package: W10
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 1971 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+618.04 EUR
MDC600-22IO1W
Hersteller: IXYS
Description: MOD BIPOLAR DIODE 2200V
Produkt ist nicht verfügbar
N6012ZD040
Hersteller: IXYS
Description: SCR 400MV 11795A W46
Produkt ist nicht verfügbar
IXTP28N15P
Hersteller: IXYS
Description: MOSFET N-CH TO-220
Produkt ist nicht verfügbar
N3165HA260
Hersteller: IXYS
Description: SCR 2.6KV 6230A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - On State (It (AV)) (Max): 3165 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 6230 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
N3165HA280
Hersteller: IXYS
Description: SCR 2.8KV 6230A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - On State (It (AV)) (Max): 3165 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 6230 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
MDMA110P1600TG MDMA110P1600TG.pdf
MDMA110P1600TG
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 110A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 110 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+70.21 EUR
10+ 64.75 EUR
N2830HE260
Hersteller: IXYS
Description: SCR 2.6KV 5585A W80
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - On State (It (AV)) (Max): 2830 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W80
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5585 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
DFE240X600NA media?resourcetype=datasheets&itemid=5feac88a-b7aa-4d9e-91e0-6524932e5d38&filename=littelfuse%2520power%2520semiconductors%2520dfe240x600na%2520datasheet.pdf
DFE240X600NA
Hersteller: IXYS
Description: DIODE MOD GP 600V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+62.48 EUR
10+ 55.51 EUR
100+ 48.55 EUR
IXTD3N50P-2J
Hersteller: IXYS
Description: MOSFET N-CH 500V 3A DIE
Produkt ist nicht verfügbar
IXTM67N10 littelfuse_discrete_mosfets_n-channel_standard_ixt___n10_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 100V 67A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFM67N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh75n10_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 100V 67A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFT320N10T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1kW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
STP802U2SRP media?resourcetype=datasheets&itemid=8bfa922f-512f-4095-bee0-385789b17272&filename=littelfuse-thyristor-stp802u2srp-datasheet
Hersteller: IXYS
Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.16 EUR
5000+ 2.08 EUR
Mindestbestellmenge: 2500
STP802U2SRP media?resourcetype=datasheets&itemid=8bfa922f-512f-4095-bee0-385789b17272&filename=littelfuse-thyristor-stp802u2srp-datasheet
Hersteller: IXYS
Description: 1.5AMP SENSITIVE DUAL SCR IN SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Independent - All SCRs
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Off State: 800 V
auf Bestellung 12600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.79 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.28 EUR
Mindestbestellmenge: 4
MCC162-18IO1B media?resourcetype=datasheets&amp;itemid=39564359-d67a-4cc3-b2ec-a1b9c4f6f8d0&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc162-14io1b_mcc162-16io1b_mcc162-18io1b_mcd162-16io1b%2520datasheet.pdf
MCC162-18IO1B
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
MTC120WX75GD-SMD
Hersteller: IXYS
Description: IGBT MOD MOSFET SIXPACK ISOPLUS
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+57.64 EUR
Mindestbestellmenge: 13
GWM160-0055X1-SMDSAM GWM160-0055X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 55V 150A ISOPLUS
Produkt ist nicht verfügbar
MCD600-22IO1W
Hersteller: IXYS
Description: MOD SCR HI POWER 1200V
Produkt ist nicht verfügbar
IXTK210P10T media?resourcetype=datasheets&itemid=cce7c83f-1d9e-454b-a7cb-d2902cd95200&filename=littelfuse_discrete_mosfets_p-channel_ixt_210p10t_datasheet.pdf
Hersteller: IXYS
Description: MOSFET P-CH -100V -210A TO-264
Packaging: Tube
Produkt ist nicht verfügbar
IXTK3N250L media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
IXFM15N60 IXFH,IXFM_15N60,%20IXFH,IXFM_20N60.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A TO204AE
Produkt ist nicht verfügbar
IXFT52N30Q TRL IXF(H,K,T)52N30Q.pdf
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268 (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
IXFX52N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Power Dissipation (Max): 360W (Tc)
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
MDD26-18N1B MDD26-18N1B.pdf
MDD26-18N1B
Hersteller: IXYS
Description: DIODE MODULE 1.8KV 36A TO240AA
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 33 66 97 98 99 100 101 102 103 104 105 106 107 132 165 198 231 264 297 330 337  [ Nächste Seite >> ]