| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXGL75N250 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™ Type of transistor: IGBT Power dissipation: 430W Case: ISOPLUS264™ Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 580A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1542ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFH96N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 600W Gate charge: 145nC |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP48N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 60nC Reverse recovery time: 130ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Drain-source voltage: 200V Drain current: 230A Case: PLUS247™ Polarisation: unipolar On-state resistance: 7.5mΩ Power dissipation: 1.67kW Kind of channel: enhancement Gate charge: 358nC Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MEK600-04DA | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Case: Y4-M6 Max. forward voltage: 1.2V Max. off-state voltage: 0.4kV Load current: 600A Max. forward impulse current: 3kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| ZY180RM | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ZY180R480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ZY180R350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ZY180L350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ZY180L480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PLA191S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Mounting: SMT Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 5kV Turn-on time: 3ms Switched voltage: max. 400V AC; max. 400V DC Case: DIP6 Max. operating current: 250mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Type of relay: solid state Manufacturer series: OptoMOS |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PLA191STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTP14N60PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Gate charge: 36nC Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO264 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTL2N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXTL2N470 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.7kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSP25-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube Max. off-state voltage: 1.6kV Load current: 28A x2 Kind of package: tube Semiconductor structure: double series Case: ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. forward impulse current: 0.3kA Max. forward voltage: 1.23V Power dissipation: 100W |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSP25-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W Max. off-state voltage: 1.6kV Load current: 25A Kind of package: tube Semiconductor structure: double series Case: TO247-3 Type of diode: rectifying Mounting: THT Max. forward impulse current: 0.3kA Max. forward voltage: 1.23V Power dissipation: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSP25-16AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Max. off-state voltage: 1.6kV Load current: 25A Semiconductor structure: double series Case: D3PAK Type of diode: rectifying Mounting: SMD Max. forward impulse current: 0.3kA Max. forward voltage: 1.16V Power dissipation: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DSP25-16AT-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V Max. off-state voltage: 1.6kV Load current: 25A Kind of package: reel; tape Case: D3PAK; TO268AA Type of diode: rectifying Mounting: SMD Max. forward impulse current: 325A Max. forward voltage: 1.23V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 62nC Turn-on time: 460ns Turn-off time: 705ns Collector current: 12A Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 160W Collector-emitter voltage: 3kV Technology: BiMOSFET™; FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LF2101NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Mounting: SMD Type of integrated circuit: driver Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape Operating temperature: -40...125°C Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LAA108S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LAA108STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MWI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MKI75-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MWI30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 30A Power dissipation: 140W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 60A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Case: TO263 On-state resistance: 96mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Power dissipation: 540W Gate charge: 54nC Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP01N100D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO220AB On-state resistance: 80Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 2ns |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH1N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Case: TO247HV Mounting: THT On-state resistance: 50Ω Power dissipation: 195W Drain-source voltage: 3kV Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.8µs Drain current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT1N300P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us Case: TO268HV Mounting: SMD On-state resistance: 50Ω Power dissipation: 195W Drain-source voltage: 3kV Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.8µs Drain current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN102N30P | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Electrical mounting: screw Kind of channel: enhancement Mechanical mounting: screw Technology: HiPerFET™; Polar™ Case: SOT227B Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Polarisation: unipolar Gate charge: 224nC Reverse recovery time: 200ns On-state resistance: 33mΩ Gate-source voltage: ±30V Drain current: 86A Drain-source voltage: 300V Pulsed drain current: 250A Power dissipation: 570W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB Kind of channel: enhancement Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 87nC On-state resistance: 18mΩ Drain current: 102A Drain-source voltage: 150V Power dissipation: 455W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264 Kind of channel: enhancement Mounting: THT Technology: PolarHT™ Case: TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 224nC Reverse recovery time: 250ns On-state resistance: 33mΩ Gate-source voltage: ±20V Drain current: 102A Drain-source voltage: 300V Power dissipation: 700W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Kind of channel: enhancement Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 87nC Reverse recovery time: 97ns On-state resistance: 18mΩ Drain current: 102A Drain-source voltage: 150V Power dissipation: 455W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTR102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Reverse recovery time: 450ns Power dissipation: 330W Gate charge: 152nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 54A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 33mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT60N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYH120N65B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 1.36kW; TO247-3 Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 760A Power dissipation: 1.36kW Collector-emitter voltage: 650V Type of transistor: IGBT Mounting: THT Kind of package: tube Gate charge: 250nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXYH12N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3 Collector current: 12A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 48A Technology: XPT™ Power dissipation: 310W Collector-emitter voltage: 2.5kV Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Kind of package: tube Turn-on time: 12ns Gate charge: 56nC Turn-off time: 167ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXYH120N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3 Collector current: 120A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 790A Power dissipation: 830W Collector-emitter voltage: 650V Type of transistor: IGBT Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXYH12N250CHV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 28A; TO247AD Collector current: 28A Case: TO247AD Collector-emitter voltage: 2.5kV Type of transistor: IGBT Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXYH12N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV Collector current: 12A Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 80A Technology: XPT™ Power dissipation: 310W Collector-emitter voltage: 2.5kV Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Kind of package: tube Turn-on time: 32ns Gate charge: 56nC Turn-off time: 333ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LAA108PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Case: DIP8 Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x2.16mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Kind of output: MOSFET Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DSP45-18A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 45A Semiconductor structure: double Kind of package: tube Max. forward impulse current: 0.48kA Case: TO247-3 Max. forward voltage: 1.26V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTH30N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.215Ω Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSI30-12AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: D2PAK; TO263AB Max. forward voltage: 1.29V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA260N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 260A Power dissipation: 480W Case: TO263 On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTA260N055T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 260A Power dissipation: 480W Case: TO263-7 On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH260N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 260A Power dissipation: 480W Case: TO247-3 On-state resistance: 3.3mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PLA132S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Contacts configuration: SPST-NO Operating temperature: -40...85°C Case: DIP6 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Turn-off time: 2ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 1Ω Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
PAA132S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PAA132STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| PLA132STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Contacts configuration: SPST-NO Operating temperature: -40...85°C Case: DIP6 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Turn-off time: 2ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 1Ω Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MCC56-14io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPG30C300PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.26V Load current: 15A x2 Power dissipation: 90W Max. forward impulse current: 0.24kA Max. off-state voltage: 300V |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPG20C300PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.27V Load current: 10A x2 Power dissipation: 65W Max. forward impulse current: 140A Max. off-state voltage: 300V |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DSSK28-01AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A Semiconductor structure: common cathode Capacitance: 334pF Max. forward voltage: 0.82V Leakage current: 0.5mA Max. forward impulse current: 230A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXGL75N250 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH30N450HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYT30N450HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFH96N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 600W
Gate charge: 145nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 600W
Gate charge: 145nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP48N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFX230N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Drain-source voltage: 200V
Drain current: 230A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 7.5mΩ
Power dissipation: 1.67kW
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Drain-source voltage: 200V
Drain current: 230A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 7.5mΩ
Power dissipation: 1.67kW
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
| MEK600-04DA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZY180RM |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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Stück im Wert von UAH
| ZY180R480 |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| ZY180R350 |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| ZY180L350 |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| ZY180L480 |
|
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| PLA191S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA191STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IXTP14N60PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK150N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXTL2N450 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTL2N470 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSP25-16AR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube
Max. off-state voltage: 1.6kV
Load current: 28A x2
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 100W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube
Max. off-state voltage: 1.6kV
Load current: 28A x2
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 100W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| DSP25-16A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 160W
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| DSP25-16AT-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
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| DSP25-16AT-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
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| IXBH12N300 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
Produkt ist nicht verfügbar
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| LF2101NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
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| LAA108S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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| LAA108STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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| MKI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MWI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MKI75-06A7 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MWI30-06A7 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| IXTA34N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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| IXTP01N100D |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH1N300P3HV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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| IXTT1N300P3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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| IXFN102N30P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
Category: Transistor modules
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
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| IXFP102N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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| IXTK102N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
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| IXTP102N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTR102N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 450ns
Power dissipation: 330W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 450ns
Power dissipation: 330W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
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| IXFT60N50P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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| IXYH120N65B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
Produkt ist nicht verfügbar
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| IXYH12N250C |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
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| IXYH120N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 790A
Power dissipation: 830W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 790A
Power dissipation: 830W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
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| IXYH12N250CHV |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 28A; TO247AD
Collector current: 28A
Case: TO247AD
Collector-emitter voltage: 2.5kV
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 28A; TO247AD
Collector current: 28A
Case: TO247AD
Collector-emitter voltage: 2.5kV
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| IXYH12N250CV1HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Collector current: 12A
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 32ns
Gate charge: 56nC
Turn-off time: 333ns
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Collector current: 12A
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 32ns
Gate charge: 56nC
Turn-off time: 333ns
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| LAA108PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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| DSP45-18A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
Produkt ist nicht verfügbar
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| IXTH30N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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| DSI30-12AS-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| IXTA260N055T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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| IXTA260N055T2-7 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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| IXTH260N055T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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| PLA132S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
| PAA132S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| PAA132STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| PLA132STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MCC56-14io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG30C300PB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Load current: 15A x2
Power dissipation: 90W
Max. forward impulse current: 0.24kA
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Load current: 15A x2
Power dissipation: 90W
Max. forward impulse current: 0.24kA
Max. off-state voltage: 300V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG20C300PB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
| DSSK28-01AS-TRL |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: common cathode
Capacitance: 334pF
Max. forward voltage: 0.82V
Leakage current: 0.5mA
Max. forward impulse current: 230A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: common cathode
Capacitance: 334pF
Max. forward voltage: 0.82V
Leakage current: 0.5mA
Max. forward impulse current: 230A
Kind of package: reel; tape
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