| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXGN100N170 | IXYS |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Features of semiconductor devices: high voltage Technology: NPT Gate-emitter voltage: ±20V Collector current: 95A Pulsed collector current: 600A Power dissipation: 735W Semiconductor structure: single transistor Max. off-state voltage: 1.7kV |
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IXGN400N60A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B Type of semiconductor module: IGBT Power dissipation: 830W Technology: GenX3™; PT Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 0.6kV Electrical mounting: screw Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 190A |
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IXGN400N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of semiconductor module: IGBT Power dissipation: 1kW Technology: GenX3™; PT Mechanical mounting: screw Pulsed collector current: 1.5kA Max. off-state voltage: 0.6kV Electrical mounting: screw Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 200A |
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IXGN200N170 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Technology: NPT Gate-emitter voltage: ±20V Collector current: 160A Pulsed collector current: 1.05kA Power dissipation: 1.25kW Semiconductor structure: single transistor Max. off-state voltage: 1.7kV |
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| IXGN82N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; Ic: 130A; SOT227B; tube Case: SOT227B Kind of package: tube Type of semiconductor module: IGBT Collector current: 130A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTP140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns Technology: TrenchP™ |
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PAA140P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Case: DIP8 Mounting: SMT Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 3ms Switched voltage: max. 400V AC; max. 400V DC Max. operating current: 250mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω |
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| PAA140PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Case: DIP8 Mounting: SMT Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 3ms Switched voltage: max. 400V AC; max. 400V DC Max. operating current: 250mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MCMA140PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk Case: TO240AA Max. off-state voltage: 1.6kV Load current: 140A Semiconductor structure: double series Max. forward voltage: 1.28V Max. load current: 220A Kind of package: bulk Max. forward impulse current: 2.4kA Gate current: 150/200mA Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Threshold on-voltage: 0.85V |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA140P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns |
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IXTT140P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO268 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: SMD Gate charge: 400nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns Technology: TrenchP™ |
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| MDMA140P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Load current: 140A Max. forward voltage: 1.11V Max. forward impulse current: 2.38kA Max. off-state voltage: 1.6kV Kind of package: bulk Case: TO240AA |
Produkt ist nicht verfügbar |
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| MCMA140P1800TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Load current: 140A Gate current: 150/200mA Max. forward voltage: 1.7V Max. off-state voltage: 1.8kV Kind of package: bulk Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTA140P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 298W; D2PAK Type of transistor: P-MOSFET Drain-source voltage: 50V Power dissipation: 298W Case: D2PAK Gate-source voltage: 15V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTH200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 550W Case: TO247-3 On-state resistance: 5.5mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
Produkt ist nicht verfügbar |
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IXFX200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IXTK120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Case: PLUS264™ Mounting: THT Kind of package: tube Power dissipation: 1.04kW Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 300ns |
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IXTK102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 1.04kW Gate charge: 152nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 102A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 30mΩ Reverse recovery time: 450ns |
Produkt ist nicht verfügbar |
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IXTX102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 1.04kW Gate charge: 152nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 102A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 30mΩ Reverse recovery time: 450ns |
Produkt ist nicht verfügbar |
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IXTN102N65X2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 650V Drain current: 76A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 30mΩ Pulsed drain current: 204A Power dissipation: 595W Technology: X2-Class Kind of channel: enhancement Gate charge: 152nC Reverse recovery time: 450ns Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTN120P20T | IXYS |
Category: Transistor modules Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: -200V Drain current: -106A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 30mΩ Pulsed drain current: -400A Power dissipation: 830W Technology: TrenchP™ Kind of channel: enhancement Gate charge: 740nC Reverse recovery time: 300ns Gate-source voltage: ±15V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| IXYP35N65C5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3 Type of transistor: IGBT Power dissipation: 326W Case: TO220-3 Mounting: THT Gate charge: 96nC Kind of package: tube Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 190A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DHG60I600HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 430A; TO247-2; tube; 415W Max. off-state voltage: 0.6kV Load current: 60A Max. forward impulse current: 430A Max. forward voltage: 2.41V Case: TO247-2 Kind of package: tube Technology: Sonic FRD™ Reverse recovery time: 35ns Mounting: THT Power dissipation: 415W Features of semiconductor devices: fast switching Semiconductor structure: single diode Type of diode: rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSA15IM200UC | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 200A Kind of package: reel; tape Power dissipation: 75W |
auf Bestellung 1482 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1225N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Case: SOP4 Mounting: SMT Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 400V AC; max. 400V DC Max. operating current: 120mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 30Ω |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB111 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Case: DIP6 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC Operating temperature: -40...85°C Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Body dimensions: 8.38x6.35x3.3mm Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Kind of output: MOSFET Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
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LCB110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA100L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Mounting: THT Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA100 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Mounting: THT Body dimensions: 9.66x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA100P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Mounting: SMT Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns |
Produkt ist nicht verfügbar |
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IXTP2N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Gate charge: 4.3nC |
Produkt ist nicht verfügbar |
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IXTH62N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 62A Power dissipation: 780W Case: TO247-3 On-state resistance: 50mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 445ns Features of semiconductor devices: ultra junction x-class |
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DSEI30-06A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 37A; Ifsm: 300A; TO247-2; tube; 125W Kind of package: tube Max. forward impulse current: 0.3kA Max. forward voltage: 1.4V Power dissipation: 125W Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 37A Semiconductor structure: single diode Case: TO247-2 Type of diode: rectifying Reverse recovery time: 35ns Mounting: THT |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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| MD16200S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 200A Case: package S Max. forward voltage: 1.5V Max. forward impulse current: 6.5kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Max. load current: 310A |
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| MDMA210P1600YD | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 210A Case: Y4-M6 Max. forward voltage: 1.04V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
Produkt ist nicht verfügbar |
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LCA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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LCA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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LCA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| LCA110LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LCA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
LCA110LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
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DSEK60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 300A; TO247-3; tube; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 0.3kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
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 |
DSEK60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: TO247-3 Kind of package: tube Max. forward voltage: 2.55V Power dissipation: 125W Reverse recovery time: 40ns Technology: FRED |
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 |
IXTR40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 312W Case: ISOPLUS247™ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: PolarP™ Drain-source voltage: -500V Drain current: -22A Reverse recovery time: 477ns Gate charge: 205nC On-state resistance: 0.26Ω Gate-source voltage: ±20V |
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IXTQ82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P Mounting: THT Power dissipation: 500W Gate charge: 142nC Polarisation: unipolar Technology: PolarHT™ Drain current: 82A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO3P On-state resistance: 38mΩ Reverse recovery time: 200ns |
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IXFB100N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Reverse recovery time: 200ns Gate charge: 240nC On-state resistance: 49mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 500V Power dissipation: 1890W |
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IXFB100N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Gate charge: 255nC On-state resistance: 49mΩ Drain current: 100A Drain-source voltage: 500V Power dissipation: 1.56kW |
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IXGK400N30A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Collector-emitter voltage: 300V Power dissipation: 1kW Gate charge: 560nC Technology: GenX3™; PT Pulsed collector current: 1.2kA Type of transistor: IGBT Turn-on time: 0.1µs Kind of package: tube Case: TO264 Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 200A Mounting: THT |
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IXTN80N30L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 80A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 38mΩ Pulsed drain current: 200A Power dissipation: 735W Technology: Linear L2™ Kind of channel: enhancement Gate charge: 660nC Reverse recovery time: 485ns Gate-source voltage: ±30V Mechanical mounting: screw |
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| MIXA225RF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Topology: boost chopper; NTC thermistor Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
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| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 10kA Load current: 425A |
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| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 8kA Load current: 300A |
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| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 15kA Load current: 600A |
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| MIXA300PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 325A Pulsed collector current: 650A Power dissipation: 1.5kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
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| MIXA450PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.1kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
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| MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Type of semiconductor module: IGBT Technology: X2PT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor |
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Im Einkaufswagen Stück im Wert von UAH |
| IXGN100N170 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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| IXGN400N60A3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Type of semiconductor module: IGBT
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 190A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Type of semiconductor module: IGBT
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 190A
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| IXGN400N60B3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Power dissipation: 1kW
Technology: GenX3™; PT
Mechanical mounting: screw
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 200A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Power dissipation: 1kW
Technology: GenX3™; PT
Mechanical mounting: screw
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 200A
Produkt ist nicht verfügbar
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| IXGN200N170 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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| IXGN82N120C3H1 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTP140P05T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH140P05T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH140P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
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| PAA140P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
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| PAA140PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MCMA140PD1600TB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Max. off-state voltage: 1.6kV
Load current: 140A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. load current: 220A
Kind of package: bulk
Max. forward impulse current: 2.4kA
Gate current: 150/200mA
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Max. off-state voltage: 1.6kV
Load current: 140A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. load current: 220A
Kind of package: bulk
Max. forward impulse current: 2.4kA
Gate current: 150/200mA
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Threshold on-voltage: 0.85V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA140P05T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT140P10T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
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| MDMA140P1600TG |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
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| MCMA140P1800TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.7V
Max. off-state voltage: 1.8kV
Kind of package: bulk
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.7V
Max. off-state voltage: 1.8kV
Kind of package: bulk
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA140P05T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 298W; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Power dissipation: 298W
Case: D2PAK
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTH200N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFX200N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTK120P20T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 300ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK102N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 450ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 450ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX102N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 450ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 450ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTN102N65X2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 76A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 30mΩ
Pulsed drain current: 204A
Power dissipation: 595W
Technology: X2-Class
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 450ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 76A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 30mΩ
Pulsed drain current: 204A
Power dissipation: 595W
Technology: X2-Class
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 450ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTN120P20T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -200V
Drain current: -106A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 30mΩ
Pulsed drain current: -400A
Power dissipation: 830W
Technology: TrenchP™
Kind of channel: enhancement
Gate charge: 740nC
Reverse recovery time: 300ns
Gate-source voltage: ±15V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -200V
Drain current: -106A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 30mΩ
Pulsed drain current: -400A
Power dissipation: 830W
Technology: TrenchP™
Kind of channel: enhancement
Gate charge: 740nC
Reverse recovery time: 300ns
Gate-source voltage: ±15V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP35N65C5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| DHG60I600HA |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 430A; TO247-2; tube; 415W
Max. off-state voltage: 0.6kV
Load current: 60A
Max. forward impulse current: 430A
Max. forward voltage: 2.41V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 415W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 430A; TO247-2; tube; 415W
Max. off-state voltage: 0.6kV
Load current: 60A
Max. forward impulse current: 430A
Max. forward voltage: 2.41V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 415W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| DSA15IM200UC |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1482 Stücke:
Lieferzeit 14-21 Tag (e)
| LCB110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1225N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| LCB111 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCB110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA100L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA100 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA100P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH120N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP2N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH62N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
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| DSEI30-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; Ifsm: 300A; TO247-2; tube; 125W
Kind of package: tube
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.4V
Power dissipation: 125W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; Ifsm: 300A; TO247-2; tube; 125W
Kind of package: tube
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.4V
Power dissipation: 125W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| MD16200S-DKM2MM |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
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| MDMA210P1600YD |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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| LCA110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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| LCA110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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| LCA110L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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| LCA110LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LCA110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LCA110LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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| DSEK60-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 300A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.3kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 300A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.3kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEK60-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTR40P50P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTQ82N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Mounting: THT
Power dissipation: 500W
Gate charge: 142nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Mounting: THT
Power dissipation: 500W
Gate charge: 142nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 38mΩ
Reverse recovery time: 200ns
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFB100N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
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| IXFB100N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
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| IXGK400N30A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Collector-emitter voltage: 300V
Power dissipation: 1kW
Gate charge: 560nC
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 0.1µs
Kind of package: tube
Case: TO264
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Collector-emitter voltage: 300V
Power dissipation: 1kW
Gate charge: 560nC
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 0.1µs
Kind of package: tube
Case: TO264
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Mounting: THT
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| IXTN80N30L2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 38mΩ
Pulsed drain current: 200A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 660nC
Reverse recovery time: 485ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 38mΩ
Pulsed drain current: 200A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 660nC
Reverse recovery time: 485ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| MIXA225RF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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| MDNA425P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
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| MDNA300P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 8kA
Load current: 300A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 8kA
Load current: 300A
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| MDNA600P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
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| MIXA300PF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MIXA450PF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXG330PF1200TSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH