IXGX50N120C3H1 IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
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Technische Details IXGX50N120C3H1 IXYS
Description: IGBT PT 1200V 95A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 31ns/123ns, Switching Energy: 2mJ (on), 630µJ (off), Test Condition: 600V, 40A, 2Ohm, 15V, Gate Charge: 196 nC, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 460 W.
Weitere Produktangebote IXGX50N120C3H1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGX50N120C3H1 | IXYS |
IGBTs High Frequency Range 40khz C-IGBT w/Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGX50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 460W Case: PLUS247™ Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGX50N120C3H1 |
|
Hersteller: IXYS
IGBTs High Frequency Range 40khz C-IGBT w/Diode
IGBTs High Frequency Range 40khz C-IGBT w/Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGX50N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: PLUS247™
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: PLUS247™
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH