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LAA110PLTR IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110PTR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Case: TO247-3
Power dissipation: 155W
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IXFA3N120 IXFA3N120 IXYS IXFA3N120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 3A
Gate charge: 39nC
Power dissipation: 200W
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7+10.75 EUR
8+9.61 EUR
9+8.91 EUR
10+7.88 EUR
20+7.82 EUR
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IXFK80N65X2 IXFK80N65X2 IXYS IXF_80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Mounting: THT
Case: TO264P
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 0.14µC
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4+21.18 EUR
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IXFH80N65X2 IXFH80N65X2 IXYS IXF_80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Technology: HiPerFET™; X2-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
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IXFH80N65X2-4 IXFH80N65X2-4 IXYS IXFH80N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXTH80N65X2 IXTH80N65X2 IXYS IXTH80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Technology: X2-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Reverse recovery time: 465ns
On-state resistance: 38mΩ
Drain current: 80A
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 137nC
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IXFT80N65X2HV IXFT80N65X2HV IXYS IXFT80N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Technology: HiPerFET™; X2-Class
Mounting: SMD
Case: TO268
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
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DCG160X650NA DCG160X650NA IXYS littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd Category: Diode modules
Description: Module: diode; double independent; 650V; If: 80Ax2; SOT227B; screw
Technology: SiC
Max. off-state voltage: 650V
Load current: 80A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.35V
Max. load current: 160A
Kind of package: tube
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
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IXFH46N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet?assetguid=516ae25a-80b7-429d-bae3-33030177c1a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Technology: HiPerFET™; X3-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 40nC
Reverse recovery time: 165ns
On-state resistance: 73mΩ
Drain current: 46A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYP48N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP48N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
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IXYA48N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA48N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
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IXYH90N65A5 IXYS IXYH90N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 260nC
Turn-off time: 420ns
Gate-emitter voltage: ±20V
Power dissipation: 650W
Collector current: 90A
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Type of transistor: IGBT
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IXTH05N250P3HV IXTH05N250P3HV IXYS IXTH05N250P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Case: TO247HV
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.5nC
Reverse recovery time: 1.2µs
Drain current: 0.33A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Power dissipation: 104W
On-state resistance: 110Ω
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Technology: Polar3™
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MCC162-16io1 MCC162-16io1 IXYS MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MCC95-14io1B MCC95-14io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MCC56-16io1B MCC56-16io1B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MCC95-12io1B MCC95-12io1B IXYS MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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IXYH120N65C3 IXYS littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 260A
Pulsed collector current: 620A
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IXFB44N100P IXFB44N100P IXYS IXFB44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXTP44N10T IXTP44N10T IXYS IXTP(Y)44N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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MMIX1F44N100Q3
+1
 		MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFA4N100P IXFA4N100P IXYS IXFA(P)4N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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IXFA4N100Q IXFA4N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFP4N100PM IXFP4N100PM IXYS IXFP4N100PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXTH4N100L IXTH4N100L IXYS IXTH4N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
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IXFB44N100Q3 IXFB44N100Q3 IXYS IXFB44N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
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IXTP260N055T2 IXTP260N055T2 IXYS IXTA(P)260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of channel: enhancement
Mounting: THT
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IXGA48N60C3-TRL IXYS littelfuse-discrete-igbts-ixg-48n60c3-datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 250A
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IXTA110N055T2 IXTA110N055T2 IXYS IXTA(P)110N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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IXTQ36P15P IXTQ36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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MCMA550PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Electrical mounting: Press-Fit; screw
Case: SimBus F
Max. forward impulse current: 13kA
Max. off-state voltage: 1.6kV
Load current: 550A
Max. load current: 864A
Semiconductor structure: double series
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DSEI12-10A DSEI12-10A IXYS Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
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CPC1001N CPC1001N IXYS 1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Case: SOP4
Turn-off time: 30µs
Turn-on time: 1µs
Kind of output: transistor
Number of channels: 1
CTR@If: 100-800%@0.2mA
Collector-emitter voltage: 30V
Insulation voltage: 1.5kV
Mounting: SMD
Type of optocoupler: optocoupler
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CPC1001NTR CPC1001NTR IXYS CPC1001N.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Case: SOP4
Mounting: SMD
Kind of output: transistor
Type of optocoupler: optocoupler
Operating temperature: -40...85°C
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
Switched voltage: max. 30V DC
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
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IXFH44N50P IXFH44N50P IXYS IXFK44N50P.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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PBB150P PBB150P IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150 PBB150 IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150PTR IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150S PBB150S IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PBB150STR IXYS PBB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1303GRTR CPC1303GRTR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Case: SO4
Turn-off time: 8µs
Turn-on time: 2µs
Kind of output: transistor
Number of channels: 1
CTR@If: 200-2500%@0.2mA
Collector-emitter voltage: 30V
Insulation voltage: 5kV
Mounting: SMD
Type of optocoupler: optocoupler
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CPC1301G CPC1301G IXYS CPC1301G.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4
Case: DIP4
Turn-off time: 60µs
Turn-on time: 1µs
Kind of output: Darlington
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 1
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Insulation voltage: 5kV
Mounting: THT
Type of optocoupler: optocoupler
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LCA127L LCA127L IXYS LCA127L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
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LCA127S LCA127S IXYS LCA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
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LCB127 LCB127 IXYS LCB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
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LCA127 LCA127 IXYS LCA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
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LCB127S LCB127S IXYS LCB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
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CS60-16IO1 CS60-16IO1 IXYS CS60-16IO1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
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LBB127P LBB127P IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
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CS60-14io1 CS60-14io1 IXYS CS60-14io1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
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PAA127 PAA127 IXYS PAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
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LBA127L LBA127L IXYS LBA127L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
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LBA127 LBA127 IXYS LBA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
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LBA127LS LBA127LS IXYS LBA127L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
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2+35.75 EUR
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MDD56-16N1B MDD56-16N1B IXYS MDD56-16N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Kind of package: bulk
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MCD95-16io1 IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA120PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LAA110PLTR LAA110L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110PTR LAA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Case: TO247-3
Power dissipation: 155W
Produkt ist nicht verfügbar
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IXFA3N120 IXFA3N120.pdf
IXFA3N120
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 3A
Gate charge: 39nC
Power dissipation: 200W
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.75 EUR
8+9.61 EUR
9+8.91 EUR
10+7.88 EUR
20+7.82 EUR
Mindestbestellmenge: 7
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IXFK80N65X2 IXF_80N65X2.pdf
IXFK80N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Mounting: THT
Case: TO264P
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 0.14µC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.23 EUR
4+21.18 EUR
5+20.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH80N65X2 IXF_80N65X2.pdf
IXFH80N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Technology: HiPerFET™; X2-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.01 EUR
Mindestbestellmenge: 6
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IXFH80N65X2-4 IXFH80N65X2-4.pdf
IXFH80N65X2-4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.27 EUR
6+14.14 EUR
10+13.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTH80N65X2 IXTH80N65X2.pdf
IXTH80N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Technology: X2-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Reverse recovery time: 465ns
On-state resistance: 38mΩ
Drain current: 80A
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 137nC
Produkt ist nicht verfügbar
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IXFT80N65X2HV IXFT80N65X2HV.pdf
IXFT80N65X2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Technology: HiPerFET™; X2-Class
Mounting: SMD
Case: TO268
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Gate-source voltage: ±30V
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DCG160X650NA littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd
DCG160X650NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 80Ax2; SOT227B; screw
Technology: SiC
Max. off-state voltage: 650V
Load current: 80A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.35V
Max. load current: 160A
Kind of package: tube
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFH46N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet?assetguid=516ae25a-80b7-429d-bae3-33030177c1a6
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Technology: HiPerFET™; X3-Class
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 40nC
Reverse recovery time: 165ns
On-state resistance: 73mΩ
Drain current: 46A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP48N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP48N65A5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA48N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA48N65A5Datasheet.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 48A; 326W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: tube
Gate charge: 0.1µC
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector current: 48A
Pulsed collector current: 236A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH90N65A5 IXYH90N65A5.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 260nC
Turn-off time: 420ns
Gate-emitter voltage: ±20V
Power dissipation: 650W
Collector current: 90A
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH05N250P3HV IXTH05N250P3HV.pdf
IXTH05N250P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Case: TO247HV
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.5nC
Reverse recovery time: 1.2µs
Drain current: 0.33A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Power dissipation: 104W
On-state resistance: 110Ω
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Technology: Polar3™
Produkt ist nicht verfügbar
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MCC162-16io1 MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf
MCC162-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+81.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC95-14io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-14io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.4 EUR
5+41 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCC56-16io1B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.48 EUR
5+32.9 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCC95-12io1B MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.83 EUR
3+39.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-16io1B MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.68 EUR
5+32.49 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXYH120N65C3 littelfuse-discrete-igbts-ixyh120n65c3-datasheet?assetguid=3a25f202-33cd-4cf6-bacc-7b1739e41fec
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 260A
Pulsed collector current: 620A
Produkt ist nicht verfügbar
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IXFB44N100P IXFB44N100P.pdf
IXFB44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+34.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTP44N10T IXTP(Y)44N10T.pdf
IXTP44N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
39+1.84 EUR
52+1.4 EUR
100+1.26 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+65.32 EUR
3+57.66 EUR
10+51.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFA4N100P IXFA(P)4N100P.pdf
IXFA4N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFA4N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf
IXFA4N100Q
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFP4N100PM IXFP4N100PM.pdf
IXFP4N100PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXTH4N100L IXTH4N100L.pdf
IXTH4N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
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IXFB44N100Q3 IXFB44N100Q3.pdf
IXFB44N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP260N055T2 IXTA(P)260N055T2.pdf
IXTP260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of channel: enhancement
Mounting: THT
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
14+5.16 EUR
50+4.98 EUR
Mindestbestellmenge: 12
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IXGA48N60C3-TRL littelfuse-discrete-igbts-ixg-48n60c3-datasheet.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 250A
Produkt ist nicht verfügbar
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IXTA110N055T2 IXTA(P)110N055T2.pdf
IXTA110N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
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IXTQ36P15P IXT_36P15P.pdf
IXTQ36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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MCMA550PD1600PTSF
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Electrical mounting: Press-Fit; screw
Case: SimBus F
Max. forward impulse current: 13kA
Max. off-state voltage: 1.6kV
Load current: 550A
Max. load current: 864A
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSEI12-10A description Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251
DSEI12-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
27+2.69 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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CPC1001N 1
CPC1001N
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Case: SOP4
Turn-off time: 30µs
Turn-on time: 1µs
Kind of output: transistor
Number of channels: 1
CTR@If: 100-800%@0.2mA
Collector-emitter voltage: 30V
Insulation voltage: 1.5kV
Mounting: SMD
Type of optocoupler: optocoupler
auf Bestellung 570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
74+0.97 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
CPC1001NTR CPC1001N.pdf
CPC1001NTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Case: SOP4
Mounting: SMD
Kind of output: transistor
Type of optocoupler: optocoupler
Operating temperature: -40...85°C
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
Switched voltage: max. 30V DC
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
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IXFH44N50P description IXFK44N50P.pdf
IXFH44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.48 EUR
30+10.1 EUR
Mindestbestellmenge: 6
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PBB150P PBB150.pdf
PBB150P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBB150 PBB150.pdf
PBB150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBB150PTR PBB150.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBB150S PBB150.pdf
PBB150S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PBB150STR PBB150.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1303GRTR CPC1303GR.pdf
CPC1303GRTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Case: SO4
Turn-off time: 8µs
Turn-on time: 2µs
Kind of output: transistor
Number of channels: 1
CTR@If: 200-2500%@0.2mA
Collector-emitter voltage: 30V
Insulation voltage: 5kV
Mounting: SMD
Type of optocoupler: optocoupler
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
52+1.4 EUR
Mindestbestellmenge: 38
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CPC1301G CPC1301G.pdf
CPC1301G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4
Case: DIP4
Turn-off time: 60µs
Turn-on time: 1µs
Kind of output: Darlington
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 1
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Insulation voltage: 5kV
Mounting: THT
Type of optocoupler: optocoupler
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
61+1.17 EUR
69+1.04 EUR
100+1.03 EUR
Mindestbestellmenge: 40
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LCA127L LCA127L.pdf
LCA127L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.11 EUR
50+4 EUR
Mindestbestellmenge: 12
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LCA127S LCA127.pdf
LCA127S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.01 EUR
50+3.93 EUR
Mindestbestellmenge: 12
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LCB127 LCB127.pdf
LCB127
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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LCA127 LCA127.pdf
LCA127
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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LCB127S LCB127.pdf
LCB127S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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CS60-16IO1 CS60-16IO1.pdf
CS60-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.08 EUR
5+15.73 EUR
10+14.1 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
LBB127P LBB127.pdf
LBB127P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.37 EUR
12+6.49 EUR
50+5.79 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
CS60-14io1 CS60-14io1.pdf
CS60-14io1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.79 EUR
10+16.86 EUR
30+16.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PAA127 PAA127.pdf
PAA127
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.91 EUR
50+7.15 EUR
Mindestbestellmenge: 7
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LBA127L LBA127L.pdf
LBA127L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.81 EUR
50+7.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
LBA127 LBA127.pdf
LBA127
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.31 EUR
12+6.41 EUR
50+5.75 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
LBA127LS LBA127L.pdf
LBA127LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MDD56-16N1B MDD56-16N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD56-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MCD95-16io1 PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA120PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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