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IXSH80N120L2KHV IXYS IXSH80N120L2KHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
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DSEP30-12A DSEP30-12A IXYS DSEP30-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP30-12CR DSEP30-12CR IXYS media?resourcetype=datasheets&itemid=4c065f49-4633-4e89-8717-37676123569f&filename=Littelfuse-Power-Semiconductors-DSEP30-12CR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Reverse recovery time: 15ns
Technology: HiPerDynFRED
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DSEP30-12AR DSEP30-12AR IXYS DSEP30-12AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP30-12B DSEP30-12B IXYS DSEP30-12B.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 3.75V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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IXFL100N50P IXFL100N50P IXYS IXFL100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Case: ISOPLUS264™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 52mΩ
Drain current: 68A
Power dissipation: 625W
Drain-source voltage: 500V
Kind of package: tube
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MDD44-18N1B MDD44-18N1B IXYS MDD44-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
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DSP8-08A DSP8-08A IXYS Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.16V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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DSP8-08AS-TUB IXYS DSP8-08AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-08AS-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-08S-Datasheet?assetguid=af3f4e23-d4d4-426d-8a6d-319eb7a8b2fc Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TUB IXYS DSP8-08S.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-12S-TRL IXYS DSP8-12S.pdf Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 130A
Kind of package: reel; tape
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DSP8-12S-TUB IXYS DSP8-12S.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 100W
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IXFK180N25T IXFK180N25T IXYS IXFK(X)180N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK250N10P IXFK250N10P IXYS IXFK(X)250N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 6.5mΩ
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 205nC
Polarisation: unipolar
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IXFK230N20T IXFK230N20T IXYS IXFK(X)230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
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IXFK520N075T2 IXFK520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 75V
Drain current: 520A
Gate charge: 545nC
On-state resistance: 2.2mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
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IXFK240N25X3 IXFK240N25X3 IXYS IXFK(X)240N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 240A
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
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IXFK80N50P IXFK80N50P IXYS IXFK(X)80N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 80A
Gate charge: 197nC
On-state resistance: 65mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
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IXFK32N80Q3 IXFK32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 1kW
Gate charge: 0.14µC
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IXTK82N25P IXTK82N25P IXYS IXTK82N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
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IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 200V
Drain current: 220A
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Power dissipation: 960W
Polarisation: unipolar
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IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
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IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXFT20N100P IXFT20N100P IXYS IXF_20N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXGA20N100-TRL IXGA20N100-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1kV; 40A; 150W; TO263
Type of transistor: IGBT
Power dissipation: 150W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1kV
Collector current: 40A
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IXFT320N10T2 IXFT320N10T2 IXYS IXFH(T)320N10T2.pdf IXFT320N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFX420N10T IXFX420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
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IXGK100N170 IXGK100N170 IXYS IXGK(X)100N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: TO264
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
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IXTT12N150 IXTT12N150 IXYS IXT_12N150.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.2µs
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
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IXTT12N150HV IXTT12N150HV IXYS IXTT12N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268HV
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
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MCC161-20io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2kV
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MCC161-22IO1 IXYS MCC161-22IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 6.48kA
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DSS10-01AS-TRL IXYS DSS10-01AS_2021.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Leakage current: 0.3mA
Capacitance: 223pF
Produkt ist nicht verfügbar
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DSS10-01AS-TUB IXYS DSS10-01A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. load current: 35A
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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DSEC30-12A DSEC30-12A IXYS media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXTA80N12T2 IXTA80N12T2 IXYS IXTA(P)80N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO263
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P IXYS IXFR40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 21A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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UGE3126AY4 UGE3126AY4 IXYS UGE3126AY4.pdf Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Body dimensions: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
Produkt ist nicht verfügbar
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CLA30E1200PB CLA30E1200PB IXYS CLA30E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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17+5.31 EUR
19+4.68 EUR
25+3.95 EUR
50+3.52 EUR
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CLA30MT1200NPB CLA30MT1200NPB IXYS CLA30MT1200NPB.pdf Category: Triacs
Description: Triac; 1.2kV; 15A; TO220AB; Igt: 40/60mA; Ifsm: 145A
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO220AB
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CLA30MT1200NPZ-TUB CLA30MT1200NPZ-TUB IXYS CLA30MT1200NPZ.pdf Category: Triacs
Description: Triac; 1.2kV; 15A; TO263ABHV; Igt: 40/60mA; Ifsm: 145A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO263ABHV
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CLA30E1200NPZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Load current: 30A
Max. off-state voltage: 1.2kV
Case: D2PAK
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS CLA30E1200NPZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: two gate polarities
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
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VUO122-12NO7 VUO122-12NO7 IXYS VUO122-12NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Leads: wire Ø 1.5mm
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.13V
Load current: 125A
Max. forward impulse current: 1kA
Max. off-state voltage: 1.2kV
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Case: ISOPLUS264™
Reverse recovery time: 250ns
Power dissipation: 625W
Gate charge: 250nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.15Ω
Mounting: THT
Produkt ist nicht verfügbar
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IX526119 IXYS Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/thyristor/IGBT
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Produkt ist nicht verfügbar
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IXFK40N90P IXFK40N90P IXYS IXFK(X)40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH110N10L2 IXYS IXTH(T)110N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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LF21904NTR LF21904NTR IXYS LF21904NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LF2103NTR LF2103NTR IXYS LF2103NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFN200N10P IXFN200N10P IXYS IXFN200N10P.pdf description Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXSH80N120L2KHV IXSH80N120L2KHV.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSEP30-12A DSEP30-12A.pdf
DSEP30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 217 Stücke:
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DSEP30-12CR media?resourcetype=datasheets&itemid=4c065f49-4633-4e89-8717-37676123569f&filename=Littelfuse-Power-Semiconductors-DSEP30-12CR-Datasheet
DSEP30-12CR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Reverse recovery time: 15ns
Technology: HiPerDynFRED
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7+13.8 EUR
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DSEP30-12AR DSEP30-12AR.pdf
DSEP30-12AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP30-12B DSEP30-12B.pdf
DSEP30-12B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 3.75V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXFL100N50P IXFL100N50P.pdf
IXFL100N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Case: ISOPLUS264™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 52mΩ
Drain current: 68A
Power dissipation: 625W
Drain-source voltage: 500V
Kind of package: tube
Produkt ist nicht verfügbar
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MDD44-18N1B MDD44-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD44-18N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
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DSP8-08A Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de
DSP8-08A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.16V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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23+3.77 EUR
29+3.03 EUR
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DSP8-08AS-TUB DSP8-08AS.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-08AS-TRL Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TRL Littelfuse-Power-Semiconductors-DSP8-08S-Datasheet?assetguid=af3f4e23-d4d4-426d-8a6d-319eb7a8b2fc
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSP8-08S-TUB DSP8-08S.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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DSP8-12S-TRL DSP8-12S.pdf Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 130A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSP8-12S-TUB DSP8-12S.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 100W
Produkt ist nicht verfügbar
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IXFK180N25T IXFK(X)180N25T.pdf
IXFK180N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 18 Stücke:
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IXFK250N10P IXFK(X)250N10P.pdf
IXFK250N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 6.5mΩ
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 205nC
Polarisation: unipolar
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IXFK230N20T IXFK(X)230N20T.pdf
IXFK230N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
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3+31.7 EUR
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IXFK520N075T2 IXFK(X)520N075T2.pdf
IXFK520N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 75V
Drain current: 520A
Gate charge: 545nC
On-state resistance: 2.2mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
auf Bestellung 296 Stücke:
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IXFK240N25X3 IXFK(X)240N25X3.pdf
IXFK240N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 240A
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
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IXFK80N50P IXFK(X)80N50P.pdf
IXFK80N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 80A
Gate charge: 197nC
On-state resistance: 65mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
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4+24.18 EUR
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IXFK32N80Q3 IXFK(X)32N80Q3.pdf
IXFK32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 1kW
Gate charge: 0.14µC
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IXTK82N25P IXTK82N25P-DTE.pdf
IXTK82N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
auf Bestellung 279 Stücke:
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IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 200V
Drain current: 220A
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Power dissipation: 960W
Polarisation: unipolar
auf Bestellung 44 Stücke:
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4+22.32 EUR
10+20.02 EUR
25+18.65 EUR
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IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
auf Bestellung 7 Stücke:
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4+25.54 EUR
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IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFT20N100P IXF_20N100P.pdf
IXFT20N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXGA20N100-TRL
IXGA20N100-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1kV; 40A; 150W; TO263
Type of transistor: IGBT
Power dissipation: 150W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1kV
Collector current: 40A
Produkt ist nicht verfügbar
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IXFT320N10T2 IXFH(T)320N10T2.pdf IXFT320N10T2.pdf
IXFT320N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
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IXFX420N10T IXFK420N10T_IXFX420N10T.pdf
IXFX420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MMIX1F420N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
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IXGK100N170 IXGK(X)100N170.pdf
IXGK100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: TO264
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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IXTT12N150 IXT_12N150.pdf
IXTT12N150
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.2µs
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Produkt ist nicht verfügbar
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IXTT12N150HV IXTT12N150HV.pdf
IXTT12N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268HV
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
Produkt ist nicht verfügbar
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MCC161-20io1 PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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MCC161-22IO1 MCC161-22IO1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 6.48kA
Produkt ist nicht verfügbar
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DSS10-01AS-TRL DSS10-01AS_2021.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Leakage current: 0.3mA
Capacitance: 223pF
Produkt ist nicht verfügbar
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DSS10-01AS-TUB DSS10-01A.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. load current: 35A
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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DSEC30-12A description media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet
DSEC30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXTA80N12T2 IXTA(P)80N12T2.pdf
IXTA80N12T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO263
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P.pdf
IXFR40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 21A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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UGE3126AY4 UGE3126AY4.pdf
UGE3126AY4
Hersteller: IXYS
Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Body dimensions: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
Produkt ist nicht verfügbar
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CLA30E1200PB CLA30E1200PB.pdf
CLA30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.68 EUR
17+5.31 EUR
19+4.68 EUR
25+3.95 EUR
50+3.52 EUR
100+3.18 EUR
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CLA30MT1200NPB CLA30MT1200NPB.pdf
CLA30MT1200NPB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 15A; TO220AB; Igt: 40/60mA; Ifsm: 145A
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO220AB
auf Bestellung 38 Stücke:
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AnzahlPrivatkunde
14+6.41 EUR
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CLA30MT1200NPZ-TUB CLA30MT1200NPZ.pdf
CLA30MT1200NPZ-TUB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 15A; TO263ABHV; Igt: 40/60mA; Ifsm: 145A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO263ABHV
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.27 EUR
12+7.44 EUR
13+6.57 EUR
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CLA30E1200NPZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Load current: 30A
Max. off-state voltage: 1.2kV
Case: D2PAK
Produkt ist nicht verfügbar
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CLA30E1200NPZ-TUB CLA30E1200NPZ.pdf
CLA30E1200NPZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: two gate polarities
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
Produkt ist nicht verfügbar
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VUO122-12NO7 VUO122-12NO7.pdf
VUO122-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Leads: wire Ø 1.5mm
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.13V
Load current: 125A
Max. forward impulse current: 1kA
Max. off-state voltage: 1.2kV
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+52.07 EUR
3+46.86 EUR
10+41.51 EUR
Mindestbestellmenge: 2 Stücke
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Case: ISOPLUS264™
Reverse recovery time: 250ns
Power dissipation: 625W
Gate charge: 250nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.15Ω
Mounting: THT
Produkt ist nicht verfügbar
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IX526119
Hersteller: IXYS
Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VVZB135-16IOXT VVZB135-16IOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/thyristor/IGBT
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Produkt ist nicht verfügbar
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IXFK40N90P IXFK(X)40N90P.pdf
IXFK40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH(T)110N10L2.pdf
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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LF21904NTR LF21904NTR.pdf
LF21904NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LF2103NTR LF2103NTR.pdf
LF2103NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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LF21064NTR LF21064NTR.pdf
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IXFN200N10P description IXFN200N10P.pdf
IXFN200N10P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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