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IXTK82N25P IXTK82N25P IXYS IXTK82N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
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IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
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IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
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IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXFT20N100P IXFT20N100P IXYS IXF_20N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXGA20N100-TRL IXGA20N100-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1kV; 40A; 150W; TO263
Type of transistor: IGBT
Power dissipation: 150W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1kV
Collector current: 40A
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IXFT320N10T2 IXFT320N10T2 IXYS IXFH(T)320N10T2.pdf IXFT320N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFX420N10T IXFX420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
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IXGK100N170 IXGK100N170 IXYS IXGK(X)100N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: TO264
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
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IXTT12N150 IXTT12N150 IXYS IXT_12N150.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.2µs
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
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IXTT12N150HV IXTT12N150HV IXYS IXTT12N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268HV
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
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MCC161-20io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2kV
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MCC161-22IO1 IXYS MCC161-22IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 6.48kA
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DSS10-01AS-TRL IXYS DSS10-01AS_2021.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Leakage current: 0.3mA
Capacitance: 223pF
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DSS10-01AS-TUB IXYS DSS10-01A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. load current: 35A
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
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DSEC30-12A DSEC30-12A IXYS Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet?assetguid=449d027a-83b1-47f6-b255-dd89c85a9bad description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; Ifsm: 90A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 90A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTA80N12T2 IXTA80N12T2 IXYS IXTA(P)80N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO263
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
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IXFR40N90P IXFR40N90P IXYS IXFR40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 21A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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UGE3126AY4 UGE3126AY4 IXYS UGE3126AY4.pdf Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Body dimensions: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
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CLA30E1200PB CLA30E1200PB IXYS CLA30E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO220AB
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
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CLA30MT1200NPB CLA30MT1200NPB IXYS CLA30MT1200NPB.pdf Category: Triacs
Description: Triac; 1.2kV; 15A; Igt: 40/60mA; TO220AB; tube; Ifsm: 145A
Max. forward impulse current: 0.145kA
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 15A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
Mounting: THT
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CLA30MT1200NPZ-TUB CLA30MT1200NPZ-TUB IXYS CLA30MT1200NPZ.pdf Category: Triacs
Description: Triac; 1.2kV; 15A; Igt: 40/60mA; TO263ABHV; tube; Ifsm: 145A
Max. forward impulse current: 0.145kA
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 15A
Kind of package: tube
Case: TO263ABHV
Typ of triac: standard
Mounting: SMD
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CLA30E1200NPZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Load current: 30A
Max. off-state voltage: 1.2kV
Case: D2PAK
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS CLA30E1200NPZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: two gate polarities
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
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VUO122-12NO7 VUO122-12NO7 IXYS VUO122-12NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Leads: wire Ø 1.5mm
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.13V
Load current: 125A
Max. forward impulse current: 1kA
Max. off-state voltage: 1.2kV
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Case: ISOPLUS264™
Reverse recovery time: 250ns
Power dissipation: 625W
Gate charge: 250nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.15Ω
Mounting: THT
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IX526119 IXYS Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
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VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/thyristor/IGBT
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
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IXFK40N90P IXFK40N90P IXYS IXFK(X)40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTH110N10L2 IXTH110N10L2 IXYS IXTH(T)110N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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LF21904NTR LF21904NTR IXYS LF21904NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF2103NTR LF2103NTR IXYS LF2103NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
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LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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IXFN200N10P IXFN200N10P IXYS IXFN200N10P.pdf description Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXXK300N60B3 IXXK300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Case: TO264
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 137ns
Turn-off time: 430ns
Gate charge: 460nC
Gate-emitter voltage: ±20V
Collector current: 300A
Collector-emitter voltage: 600V
Pulsed collector current: 1.14kA
Power dissipation: 2.3kW
Kind of package: tube
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IXFH180N20X3 IXFH180N20X3 IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
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DCK30C1200HB IXYS DCK30C1200HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 44A; TO247-3; Ir: 2uA
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 2µA
Max. forward voltage: 1.7V
Load current: 44A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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DCG45X1200NA DCG45X1200NA IXYS DCG45X1200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 22Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Max. forward voltage: 2.2V
Load current: 22A x2
Max. load current: 44A
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTP12N70X2 IXTP12N70X2 IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 180W
Gate charge: 19nC
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IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
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IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Mounting: THT
Power dissipation: 250W
Gate charge: 78nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.7mΩ
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IXTP12N70X2M IXTP12N70X2M IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 40W
Gate charge: 19nC
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IXGF25N250 IXYS littelfuse-discrete-igbts-ixgf25n250-datasheet?assetguid=6c4037df-b10b-40b6-8c4b-e3224d5cb52a Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Mounting: THT
Kind of package: tube
Case: i4-pac
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 2.5kV
Power dissipation: 114W
Gate charge: 75nC
Pulsed collector current: 200A
Type of transistor: IGBT
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IXCP10M90S IXCP10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S IXCY10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL IXCY10M90S-TRL IXYS littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXGN320N60A3 IXGN320N60A3 IXYS IXGN320N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
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IXGN100N170 IXGN100N170 IXYS IXGN100N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3 IXYS IXGN400N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
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IXGN400N60B3 IXGN400N60B3 IXYS IXGN400N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Technology: GenX3™; PT
Mechanical mounting: screw
Power dissipation: 1kW
Pulsed collector current: 1.5kA
Gate-emitter voltage: ±20V
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IXGN200N170 IXGN200N170 IXYS IXGN200N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
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IXTP140P05T IXTP140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
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IXTH140P05T IXTH140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
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IXTH140P10T IXTH140P10T IXYS IXT_140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
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IXTK82N25P IXTK82N25P-DTE.pdf
IXTK82N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
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IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
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IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
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IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXFT20N100P IXF_20N100P.pdf
IXFT20N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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IXGA20N100-TRL
IXGA20N100-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1kV; 40A; 150W; TO263
Type of transistor: IGBT
Power dissipation: 150W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1kV
Collector current: 40A
Produkt ist nicht verfügbar
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IXFT320N10T2 IXFH(T)320N10T2.pdf IXFT320N10T2.pdf
IXFT320N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFX420N10T IXFK420N10T_IXFX420N10T.pdf
IXFX420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; Trench™
Reverse recovery time: 140ns
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IXGK100N170 IXGK(X)100N170.pdf
IXGK100N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 830W
Gate charge: 425nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 285ns
Kind of package: tube
Case: TO264
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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IXTT12N150 IXT_12N150.pdf
IXTT12N150
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.2µs
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
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IXTT12N150HV IXTT12N150HV.pdf
IXTT12N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268HV
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
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MCC161-20io1 PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2kV
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MCC161-22IO1 MCC161-22IO1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 6.48kA
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DSS10-01AS-TRL DSS10-01AS_2021.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Leakage current: 0.3mA
Capacitance: 223pF
Produkt ist nicht verfügbar
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DSS10-01AS-TUB DSS10-01A.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. load current: 35A
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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DSEC30-12A description Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet?assetguid=449d027a-83b1-47f6-b255-dd89c85a9bad
DSEC30-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; Ifsm: 90A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 90A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXTA80N12T2 IXTA(P)80N12T2.pdf
IXTA80N12T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO263
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P.pdf
IXFR40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 21A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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UGE3126AY4 UGE3126AY4.pdf
UGE3126AY4
Hersteller: IXYS
Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Body dimensions: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
Produkt ist nicht verfügbar
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CLA30E1200PB CLA30E1200PB.pdf
CLA30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO220AB
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
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CLA30MT1200NPB CLA30MT1200NPB.pdf
CLA30MT1200NPB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 15A; Igt: 40/60mA; TO220AB; tube; Ifsm: 145A
Max. forward impulse current: 0.145kA
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 15A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
Mounting: THT
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CLA30MT1200NPZ-TUB CLA30MT1200NPZ.pdf
CLA30MT1200NPZ-TUB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 15A; Igt: 40/60mA; TO263ABHV; tube; Ifsm: 145A
Max. forward impulse current: 0.145kA
Gate current: 40/60mA
Max. off-state voltage: 1.2kV
Max. load current: 15A
Kind of package: tube
Case: TO263ABHV
Typ of triac: standard
Mounting: SMD
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CLA30E1200NPZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Load current: 30A
Max. off-state voltage: 1.2kV
Case: D2PAK
Produkt ist nicht verfügbar
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CLA30E1200NPZ-TUB CLA30E1200NPZ.pdf
CLA30E1200NPZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: two gate polarities
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
Produkt ist nicht verfügbar
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VUO122-12NO7 VUO122-12NO7.pdf
VUO122-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Leads: wire Ø 1.5mm
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.13V
Load current: 125A
Max. forward impulse current: 1kA
Max. off-state voltage: 1.2kV
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Produkt ist nicht verfügbar
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Case: ISOPLUS264™
Reverse recovery time: 250ns
Power dissipation: 625W
Gate charge: 250nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.15Ω
Mounting: THT
Produkt ist nicht verfügbar
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IX526119
Hersteller: IXYS
Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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VVZB135-16IOXT VVZB135-16IOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Pulsed collector current: 225A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/thyristor/IGBT
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Produkt ist nicht verfügbar
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IXFK40N90P IXFK(X)40N90P.pdf
IXFK40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH(T)110N10L2.pdf
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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LF21904NTR LF21904NTR.pdf
LF21904NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LF2103NTR LF2103NTR.pdf
LF2103NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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LF21064NTR LF21064NTR.pdf
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IXFN200N10P description IXFN200N10P.pdf
IXFN200N10P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXXK300N60B3 IXXK(X)300N60B3.pdf
IXXK300N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Case: TO264
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 137ns
Turn-off time: 430ns
Gate charge: 460nC
Gate-emitter voltage: ±20V
Collector current: 300A
Collector-emitter voltage: 600V
Pulsed collector current: 1.14kA
Power dissipation: 2.3kW
Kind of package: tube
Produkt ist nicht verfügbar
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IXFH180N20X3 IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
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DCK30C1200HB DCK30C1200HB.pdf
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 44A; TO247-3; Ir: 2uA
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 2µA
Max. forward voltage: 1.7V
Load current: 44A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DCG45X1200NA DCG45X1200NA.pdf
DCG45X1200NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 22Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Max. forward voltage: 2.2V
Load current: 22A x2
Max. load current: 44A
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTP12N70X2 littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTP12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 180W
Gate charge: 19nC
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IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
Produkt ist nicht verfügbar
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IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Mounting: THT
Power dissipation: 250W
Gate charge: 78nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.7mΩ
Produkt ist nicht verfügbar
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IXTP12N70X2M littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTP12N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Power dissipation: 40W
Gate charge: 19nC
Produkt ist nicht verfügbar
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IXGF25N250 littelfuse-discrete-igbts-ixgf25n250-datasheet?assetguid=6c4037df-b10b-40b6-8c4b-e3224d5cb52a
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Mounting: THT
Kind of package: tube
Case: i4-pac
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 2.5kV
Power dissipation: 114W
Gate charge: 75nC
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXCP10M90S IXCP10M90S.pdf
IXCP10M90S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S IXCP10M90S.pdf
IXCY10M90S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e
IXCY10M90S-TRL
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IXGN320N60A3 IXGN320N60A3.pdf
IXGN320N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXGN100N170 IXGN100N170.pdf
IXGN100N170
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3.pdf
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXGN400N60B3 IXGN400N60B3.pdf
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Technology: GenX3™; PT
Mechanical mounting: screw
Power dissipation: 1kW
Pulsed collector current: 1.5kA
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXGN200N170 IXGN200N170.pdf
IXGN200N170
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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IXGN82N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTP140P05T IXT_140P05T.pdf
IXTP140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
auf Bestellung 211 Stücke:
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IXTH140P05T IXT_140P05T.pdf
IXTH140P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
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IXTH140P10T IXT_140P10T.pdf
IXTH140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
auf Bestellung 2 Stücke:
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