auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6 EUR |
| 50+ | 3.08 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.45 EUR |
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Technische Details IXTA110N055T2 IXYS
Description: MOSFET N-CH 55V 110A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V.
Weitere Produktangebote IXTA110N055T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA110N055T2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA110N055T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA110N055T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 55V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA110N055T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
Produkt ist nicht verfügbar |