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IXTA130N10T7 IXYS IXTA130N10T7.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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DSP25-12AT-TUB DSP25-12AT-TUB IXYS DSP25-12AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Semiconductor structure: double series
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
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10+7.82 EUR
11+6.91 EUR
30+6.32 EUR
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LIA136 IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136S IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135 IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136STR IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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IXGA48N60A3 IXGA48N60A3 IXYS IXGA(P,H)48N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
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PLA192S PLA192S IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA192STR IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1708J CPC1708J IXYS CPC1708.pdf Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 20ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
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IXTK32P60P IXTK32P60P IXYS IXTK32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Case: TO264
Kind of channel: enhancement
Mounting: THT
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VHFD29-16IO1 IXYS VHFD29.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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DSSK48-003BS DSSK48-003BS IXYS DSSK48-003BS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
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IXTH75N10L2 IXTH75N10L2 IXYS IXT_75N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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IXTA24N65X2 IXTA24N65X2 IXYS IXT_24N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXYH50N120C3D1 IXYH50N120C3D1 IXYS IXYH50N120C3d1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
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IXGN50N120C3H1 IXGN50N120C3H1 IXYS IXGN50N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
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IXYH50N120C3 IXYH50N120C3 IXYS IXYH50N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXYR50N120C3D1 IXYR50N120C3D1 IXYS IXYR50N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
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IXGH50N120C3 IXGH50N120C3 IXYS IXGH50N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Collector-emitter voltage: 1.2kV
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IXGK50N120C3H1 IXGK50N120C3H1 IXYS IXGK(X)50N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXGX50N120C3H1 IXGX50N120C3H1 IXYS IXGK(X)50N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: PLUS247™
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
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IXTH24N65X2 IXTH24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXYH16N250C IXYS DS100793A(IXYH16N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
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IXYH16N250CV1HV IXYH16N250CV1HV IXYS IXYH16N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
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CPC1788J CPC1788J IXYS CPC1788.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 20ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
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CPC1705Y CPC1705Y IXYS CPC1705y.pdf Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Turn-off time: 12ms
Turn-on time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
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PLA171P PLA171P IXYS PLA171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
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PLB171P PLB171P IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
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PLA134 PLA134 IXYS PLA134.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
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CPC1981Y CPC1981Y IXYS CPC1981.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 180mA
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 18Ω
Switched voltage: max. 1kV AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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IXBF42N300 IXBF42N300 IXYS IXBF42N300.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
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LCA210LS LCA210LS IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
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LCA220STR IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
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LCA210L LCA210L IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA210LSTR IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA210STR IXYS LCA210L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA220S LCA220S IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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IXTP8N70X2M IXTP8N70X2M IXYS IXTP8N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Power dissipation: 32W
auf Bestellung 288 Stücke:
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IXFP14N85XM IXFP14N85XM IXYS IXFP14N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
Power dissipation: 38W
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IXYK120N120C3 IXYK120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 319 Stücke:
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IXYX120N120B3 IXYX120N120B3 IXYS IXYX120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
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2+40.27 EUR
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IXYX120N120C3 IXYX120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
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3+36.57 EUR
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IXFT120N15P IXFT120N15P IXYS IXF_120N15P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 150nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 600W
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.54 EUR
10+10.34 EUR
30+8.12 EUR
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IXFT120N25X3HV IXFT120N25X3HV IXYS IXFH(T,Q)120N25X3_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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5+14.81 EUR
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IXDN609SI IXDN609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1287 Stücke:
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24+3.06 EUR
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IXDN609SIA IXDN609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 143 Stücke:
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38+1.93 EUR
51+1.42 EUR
55+1.32 EUR
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IXTH2N300P3HV IXTH2N300P3HV IXYS IXTH(T)2N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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DSA30C60PB DSA30C60PB IXYS DSA30C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 327 Stücke:
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44+1.63 EUR
49+1.47 EUR
55+1.3 EUR
61+1.17 EUR
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DSI45-16A DSI45-16A IXYS DSI45-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 227 Stücke:
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14+5.36 EUR
17+4.4 EUR
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30+3.63 EUR
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DSI45-12A DSI45-12A IXYS DSI45-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
auf Bestellung 480 Stücke:
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DSI45-16AR DSI45-16AR IXYS DSI45-16AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
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13+5.58 EUR
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DSEP15-12CR DSEP15-12CR IXYS DSEP15-12CR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXGA12N120A3 IXGA12N120A3 IXYS IXGA(p,h)12N120A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGA12N120A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Type of transistor: IGBT
Kind of package: reel; tape
Gate charge: 20.4nC
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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MEK350-02DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
Produkt ist nicht verfügbar
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IXCP10M45S IXCP10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
auf Bestellung 403 Stücke:
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22+3.3 EUR
29+2.52 EUR
30+2.46 EUR
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IXCY10M45S IXCY10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
auf Bestellung 30 Stücke:
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23+3.15 EUR
30+2.39 EUR
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IXCY10M45S-TRL IXYS 98704.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
Produkt ist nicht verfügbar
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IXBH42N170 IXBH42N170 IXYS IXBH42N170_IXBT42N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTA130N10T7 IXTA130N10T7.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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DSP25-12AT-TUB DSP25-12AT.pdf
DSP25-12AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Semiconductor structure: double series
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
10+7.82 EUR
11+6.91 EUR
30+6.32 EUR
Mindestbestellmenge: 9
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LIA136 LIA135.pdf
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA136S LIA135.pdf
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA135 LIA135.pdf
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA136STR LIA135.pdf
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXGA48N60A3 IXGA(P,H)48N60A3.pdf
IXGA48N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
auf Bestellung 169 Stücke:
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Anzahl Preis
12+6.39 EUR
13+5.72 EUR
16+4.68 EUR
50+4.13 EUR
Mindestbestellmenge: 12
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PLA192S PLA192.pdf
PLA192S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PLA192STR PLA192.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1708J CPC1708.pdf
CPC1708J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 20ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.08 EUR
10+20.76 EUR
25+19.49 EUR
100+17.55 EUR
Mindestbestellmenge: 3
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IXTK32P60P IXTK32P60P.pdf
IXTK32P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Case: TO264
Kind of channel: enhancement
Mounting: THT
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.92 EUR
10+19.2 EUR
Mindestbestellmenge: 4
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VHFD29-16IO1 VHFD29.pdf
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Produkt ist nicht verfügbar
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DSSK48-003BS DSSK48-003BS.pdf
DSSK48-003BS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
64+1.13 EUR
66+1.09 EUR
100+1.07 EUR
Mindestbestellmenge: 61
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IXTH75N10L2 IXT_75N10L2.pdf
IXTH75N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXTA24N65X2 IXT_24N65X2.pdf
IXTA24N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXYH50N120C3D1 IXYH50N120C3d1.pdf
IXYH50N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.3 EUR
7+11.77 EUR
Mindestbestellmenge: 6
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IXGN50N120C3H1 IXGN50N120C3H1.pdf
IXGN50N120C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Power dissipation: 460W
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH50N120C3 IXYH50N120C3.pdf
IXYH50N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYR50N120C3D1 IXYR50N120C3D1.pdf
IXYR50N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH50N120C3 IXGH50N120C3.pdf
IXGH50N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGK50N120C3H1 IXGK(X)50N120C3H1.pdf
IXGK50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGX50N120C3H1 IXGK(X)50N120C3H1.pdf
IXGX50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: PLUS247™
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXTH24N65X2 IXT_24N65X2.pdf
IXTH24N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXYH16N250C DS100793A(IXYH16N250C)_.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXYH16N250CV1HV IXYH16N250CV1HV.pdf
IXYH16N250CV1HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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CPC1788J CPC1788.pdf
CPC1788J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 20ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.92 EUR
Mindestbestellmenge: 3
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CPC1705Y CPC1705y.pdf
CPC1705Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Turn-off time: 12ms
Turn-on time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.34 EUR
10+9.21 EUR
25+8.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PLA171P PLA171.pdf
PLA171P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.37 EUR
10+8.05 EUR
50+6.69 EUR
100+6.19 EUR
Mindestbestellmenge: 9
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PLB171P PLB171.pdf
PLB171P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.36 EUR
10+10.67 EUR
Mindestbestellmenge: 6
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PLA134 PLA134.pdf
PLA134
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.06 EUR
Mindestbestellmenge: 4
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CPC1981Y CPC1981.pdf
CPC1981Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 180mA
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 18Ω
Switched voltage: max. 1kV AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXBF42N300 IXBF42N300.pdf
IXBF42N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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LCA210LS LCA210L.pdf
LCA210LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA220STR LCA220.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA210L LCA210L.pdf
LCA210L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA210LSTR LCA210L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA210STR LCA210L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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LCA220S LCA220.pdf
LCA220S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Produkt ist nicht verfügbar
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IXTP8N70X2M IXTP8N70X2M.pdf
IXTP8N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Power dissipation: 32W
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
27+2.73 EUR
30+2.4 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXFP14N85XM IXFP14N85XM.pdf
IXFP14N85XM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
Power dissipation: 38W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.01 EUR
14+5.41 EUR
15+4.78 EUR
Mindestbestellmenge: 12
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IXYK120N120C3 IXYK(x)120N120C3.pdf
IXYK120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.36 EUR
5+30.66 EUR
10+30.49 EUR
Mindestbestellmenge: 3
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IXYX120N120B3 IXYX120N120B3.pdf
IXYX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.27 EUR
3+36.26 EUR
10+32.03 EUR
Mindestbestellmenge: 2
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IXYX120N120C3 IXYK(x)120N120C3.pdf
IXYX120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; XPT™
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.91 EUR
3+36.57 EUR
Mindestbestellmenge: 2
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IXFT120N15P IXF_120N15P.pdf
IXFT120N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 150nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 600W
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.54 EUR
10+10.34 EUR
30+8.12 EUR
Mindestbestellmenge: 6
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IXFT120N25X3HV IXFH(T,Q)120N25X3_HV.pdf
IXFT120N25X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.81 EUR
Mindestbestellmenge: 5
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IXDN609SI IXDD609CI.pdf
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
32+2.27 EUR
34+2.12 EUR
50+2.04 EUR
Mindestbestellmenge: 24
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IXDN609SIA IXDD609CI.pdf
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
51+1.42 EUR
55+1.32 EUR
Mindestbestellmenge: 38
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IXTH2N300P3HV IXTH(T)2N300P3HV.pdf
IXTH2N300P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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DSA30C60PB DSA30C60PB.pdf
DSA30C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
55+1.3 EUR
61+1.17 EUR
Mindestbestellmenge: 44
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DSI45-16A DSI45-16A.pdf
DSI45-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
17+4.4 EUR
19+3.86 EUR
30+3.63 EUR
Mindestbestellmenge: 14
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DSI45-12A DSI45-12A.pdf
DSI45-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
20+3.7 EUR
30+3.33 EUR
Mindestbestellmenge: 16
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DSI45-16AR DSI45-16AR.pdf
DSI45-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
Mindestbestellmenge: 13
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DSEP15-12CR DSEP15-12CR.pdf
DSEP15-12CR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IXGA12N120A3 IXGA(p,h)12N120A3.pdf
IXGA12N120A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGA12N120A3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Type of transistor: IGBT
Kind of package: reel; tape
Gate charge: 20.4nC
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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MEK350-02DA PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
Produkt ist nicht verfügbar
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IXCP10M45S IXCP10M90S.pdf
IXCP10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
29+2.52 EUR
30+2.46 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXCY10M45S IXCP10M90S.pdf
IXCY10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
30+2.39 EUR
Mindestbestellmenge: 23
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IXCY10M45S-TRL 98704.pdf
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
Produkt ist nicht verfügbar
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IXBH42N170 IXBH42N170_IXBT42N170.pdf
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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