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VUO36-16NO8 VUO36-16NO8 IXYS VUO36.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
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MIXG300PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MDD255-12N1 MDD255-12N1 IXYS MDD255-xxN1-DTE.pdf MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-16N1 MDD255-16N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-22N1 MDD255-22N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-20N1 MDD255-20N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-18N1 IXYS MDD255-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-14N1 IXYS MDD255-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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IXTP270N04T4 IXTP270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 48ns
Gate charge: 182nC
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
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20+4.31 EUR
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DSEI60-02A DSEI60-02A IXYS DSEI60-02A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Power dissipation: 150W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.88V
Max. forward impulse current: 540A
Load current: 69A
Max. off-state voltage: 200V
Technology: FRED
auf Bestellung 191 Stücke:
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11+8.08 EUR
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DSEI2X61-10B DSEI2X61-10B IXYS DSEI2X61-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Load current: 60A x2
Max. load current: 120A
Max. off-state voltage: 1kV
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DSEI120-06A DSEI120-06A IXYS DSEI120-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
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CLA16E1200PN CLA16E1200PN IXYS CLA16E1200PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS IXTA380N036T4-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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PM1204S PM1204S IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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IXXN340N65B4 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Collector current: 520A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
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SK230NRP IXYS SK230.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
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SK230RTP IXYS SK230.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
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IXYX50N170C IXYX50N170C IXYS IXYX50N170C.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
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PLA110S PLA110S IXYS PLA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PLA110STR IXYS PLA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCA100 LCA100 IXYS LCA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCA100L LCA100L IXYS LCA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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LCA100S LCA100S IXYS LCA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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LCA100LS LCA100LS IXYS LCA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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DPJ50XS1800NA IXYS Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Kind of package: tube
Reverse recovery time: 30ns
Leakage current: 0.25mA
Max. off-state voltage: 1.8kV
Load current: 25A x2
Max. forward impulse current: 250A
Max. load current: 50A
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
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IXTH4N150 IXTH4N150 IXYS IXTH4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXTA4N150HV IXTA4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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IXTJ4N150 IXTJ4N150 IXYS IXTJ4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
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IXTT4N150HV IXTT4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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FUO50-16N FUO50-16N IXYS FUO50-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
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IXFH20N80P IXFH20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Case: TO247-3
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
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IXFR20N80P IXFR20N80P IXYS IXFR20N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
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IXFT20N80P IXFT20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
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IXFR44N50Q3 IXFR44N50Q3 IXYS IXFR44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Gate charge: 93nC
On-state resistance: 154mΩ
Power dissipation: 300W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFR48N60Q3 IXFR48N60Q3 IXYS IXFR48N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MMIX1T600N04T2MMIX1T600N04T2
MMIX1T600N04T2MMIX1T600N04T2
 MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
auf Bestellung 20 Stücke:
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2+53.16 EUR
3+47.02 EUR
10+42.23 EUR
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DSS2X121-0045B DSS2X121-0045B IXYS DSS2x121-0045B.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X101-02A DSS2X101-02A IXYS DSS2x101-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X101-015A DSS2X101-015A IXYS DSS2X101-015A.pdf description Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X61-01A DSS2X61-01A IXYS DSS2x61-01A.pdf Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X41-01A DSS2X41-01A IXYS DSS2x41-01A.pdf description Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X61-0045A DSS2X61-0045A IXYS DSS2x61-0045A.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X111-008A DSS2X111-008A IXYS DSS2x111-008A.pdf Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS20-0015B DSS20-0015B IXYS DSS20-0015B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
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DSS2X160-0045A DSS2X160-0045A IXYS DSS2X160-0045A.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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DSS2X81-0045B DSS2X81-0045B IXYS DSS2x81-0045B.pdf Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTN110N20L2 IXTN110N20L2 IXYS IXTN110N20L2.pdf Category: Transistor drivers
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 420ns
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 275A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTK110N20L2 IXTK110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
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IXTX110N20L2 IXTX110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
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IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.49 EUR
18+4.75 EUR
25+4.31 EUR
50+4.01 EUR
100+3.81 EUR
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IXTH3N100P IXTH3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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10+8.91 EUR
13+7.06 EUR
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IXTA3N100D2 IXTA3N100D2 IXYS IXTA(P)3N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV IXYS IXTA3N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100P IXTA3N100P IXYS IXTA(H,P)3N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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IXTP3N100P IXTP3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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IXFP18N65X2M IXFP18N65X2M IXYS IXFP18N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
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IXFA18N65X2 IXFA18N65X2 IXYS IXF_18N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 IXFH18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFP18N65X2 IXFP18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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VUO36-16NO8 VUO36.pdf
VUO36-16NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
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MIXG300PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MDD255-12N1 MDD255-xxN1-DTE.pdf MDD255-xxN1-DTE.pdf
MDD255-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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3+199.17 EUR
6+194.67 EUR
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MDD255-16N1 MDD255-xxN1-DTE.pdf
MDD255-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-22N1 MDD255-xxN1-DTE.pdf
MDD255-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-20N1 MDD255-xxN1-DTE.pdf
MDD255-20N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-18N1 MDD255-18N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-14N1 MDD255-14N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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IXTP270N04T4 IXTH(P)270N04T4.pdf
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 48ns
Gate charge: 182nC
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 59 Stücke:
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18+4.78 EUR
20+4.31 EUR
23+3.81 EUR
50+3.53 EUR
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DSEI60-02A description DSEI60-02A.pdf
DSEI60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Power dissipation: 150W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.88V
Max. forward impulse current: 540A
Load current: 69A
Max. off-state voltage: 200V
Technology: FRED
auf Bestellung 191 Stücke:
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10+8.97 EUR
11+8.08 EUR
13+6.74 EUR
30+6.72 EUR
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DSEI2X61-10B DSEI2X61-10B.pdf
DSEI2X61-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Load current: 60A x2
Max. load current: 120A
Max. off-state voltage: 1kV
auf Bestellung 58 Stücke:
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2+46.95 EUR
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DSEI120-06A DSEI120-06A.pdf
DSEI120-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Produkt ist nicht verfügbar
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CLA16E1200PN CLA16E1200PN.pdf
CLA16E1200PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.8 EUR
33+2.64 EUR
50+2.42 EUR
100+2.33 EUR
Mindestbestellmenge: 18 Stücke
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IXTA380N036T4-7 IXTA380N036T4-7.pdf
IXTA380N036T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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PM1204S PM1204.pdf
PM1204S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+20.77 EUR
50+13.6 EUR
Mindestbestellmenge: 5 Stücke
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IXXN340N65B4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Collector current: 520A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SK230NRP SK230.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
Produkt ist nicht verfügbar
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SK230RTP SK230.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXYX50N170C IXYX50N170C.pdf
IXYX50N170C
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
Produkt ist nicht verfügbar
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PLA110S PLA110.pdf
PLA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.62 EUR
50+8.39 EUR
Mindestbestellmenge: 9 Stücke
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PLA110STR PLA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LCA100 LCA100.pdf
LCA100
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCA100L LCA100L.pdf
LCA100L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCA100S LCA100.pdf
LCA100S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCA100LS LCA100L.pdf
LCA100LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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DPJ50XS1800NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Kind of package: tube
Reverse recovery time: 30ns
Leakage current: 0.25mA
Max. off-state voltage: 1.8kV
Load current: 25A x2
Max. forward impulse current: 250A
Max. load current: 50A
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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IXTH4N150 IXTH4N150.pdf
IXTH4N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTA4N150HV IXTA(T)4N150HV.pdf
IXTA4N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTJ4N150 IXTJ4N150.pdf
IXTJ4N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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IXTT4N150HV IXTA(T)4N150HV.pdf
IXTT4N150HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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FUO50-16N FUO50-16N.pdf
FUO50-16N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.8 EUR
4+26.43 EUR
5+25.16 EUR
Mindestbestellmenge: 3 Stücke
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IXFH20N80P IXFH(T,V)20N80P_S.pdf
IXFH20N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Case: TO247-3
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
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7+13.41 EUR
10+10.02 EUR
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IXFR20N80P IXFR20N80P.pdf
IXFR20N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.29 EUR
7+12.83 EUR
10+11.33 EUR
30+10.2 EUR
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IXFT20N80P IXFH(T,V)20N80P_S.pdf
IXFT20N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
Produkt ist nicht verfügbar
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IXFR44N50Q3 IXFR44N50Q3.pdf
IXFR44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Gate charge: 93nC
On-state resistance: 154mΩ
Power dissipation: 300W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFR48N60Q3 IXFR48N60Q3.pdf
IXFR48N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2MMIX1T600N04T2
MMIX1T600N04T2MMIX1T600N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+53.16 EUR
3+47.02 EUR
10+42.23 EUR
Mindestbestellmenge: 2 Stücke
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DSS2X121-0045B description DSS2x121-0045B.pdf
DSS2X121-0045B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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DSS2X101-02A DSS2x101-02A.pdf
DSS2X101-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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DSS2X101-015A description DSS2X101-015A.pdf
DSS2X101-015A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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DSS2X61-01A DSS2x61-01A.pdf
DSS2X61-01A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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DSS2X41-01A description DSS2x41-01A.pdf
DSS2X41-01A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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DSS2X61-0045A description DSS2x61-0045A.pdf
DSS2X61-0045A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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DSS2X111-008A DSS2x111-008A.pdf
DSS2X111-008A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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DSS20-0015B DSS20-0015B.pdf
DSS20-0015B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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DSS2X160-0045A DSS2X160-0045A.pdf
DSS2X160-0045A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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DSS2X81-0045B DSS2x81-0045B.pdf
DSS2X81-0045B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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IXTN110N20L2 IXTN110N20L2.pdf
IXTN110N20L2
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 420ns
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 275A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTK110N20L2 IXT_110N20L2.pdf
IXTK110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
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IXTX110N20L2 IXT_110N20L2.pdf
IXTX110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
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IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.49 EUR
18+4.75 EUR
25+4.31 EUR
50+4.01 EUR
100+3.81 EUR
Mindestbestellmenge: 14 Stücke
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IXTH3N100P IXTA(H,P)3N100P.pdf
IXTH3N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.91 EUR
13+7.06 EUR
30+5.51 EUR
Mindestbestellmenge: 10 Stücke
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IXTA3N100D2 IXTA(P)3N100D2.pdf
IXTA3N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV.pdf
IXTA3N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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IXTA3N100P IXTA(H,P)3N100P.pdf
IXTA3N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Produkt ist nicht verfügbar
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IXTP3N100P IXTA(H,P)3N100P.pdf
IXTP3N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXFP18N65X2M IXFP18N65X2M.pdf
IXFP18N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 IXF_18N65X2.pdf
IXFA18N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 IXF_18N65X2.pdf
IXFH18N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXFP18N65X2 IXF_18N65X2.pdf
IXFP18N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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