Technische Details IXGH50N120C3 Littelfuse
Description: IGBT PT 1200V 75A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/123ns, Switching Energy: 2.2mJ (on), 630µJ (off), Test Condition: 600V, 40A, 2Ohm, 15V, Gate Charge: 196 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 460 W.
Weitere Produktangebote IXGH50N120C3
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IXGH50N120C3 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 250A Turn-on time: 55ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH50N120C3 | Hersteller : IXYS |
Description: IGBT PT 1200V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/123ns Switching Energy: 2.2mJ (on), 630µJ (off) Test Condition: 600V, 40A, 2Ohm, 15V Gate Charge: 196 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 250 A Power - Max: 460 W |
Produkt ist nicht verfügbar |
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IXGH50N120C3 | Hersteller : IXYS |
IGBTs 75Amps 1200V |
Produkt ist nicht verfügbar |
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IXGH50N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 250A Turn-on time: 55ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT |
Produkt ist nicht verfügbar |