IXGH50N120C3
Hersteller:
IGBT PT 1200V 50A TO-247 Група товару: Транзистори Од. вим: шт
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Technische Details IXGH50N120C3
Description: IGBT PT 1200V 75A TO-247AD, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Gate Charge: 196 nC, Test Condition: 600V, 40A, 2Ohm, 15V, Switching Energy: 2.2mJ (on), 630µJ (off), Td (on/off) @ 25°C: 20ns/123ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 460 W, Current - Collector Pulsed (Icm): 250 A.
Weitere Produktangebote IXGH50N120C3
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IXGH50N120C3 | Hersteller : IXYS |
Description: IGBT PT 1200V 75A TO-247AD Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Gate Charge: 196 nC Test Condition: 600V, 40A, 2Ohm, 15V Switching Energy: 2.2mJ (on), 630µJ (off) Td (on/off) @ 25°C: 20ns/123ns IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 460 W Current - Collector Pulsed (Icm): 250 A |
Produkt ist nicht verfügbar |
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IXGH50N120C3 | Hersteller : IXYS |
IGBTs 75Amps 1200V |
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IXGH50N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 460W Case: TO247-3 Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 55ns Turn-off time: 485ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 250A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |