Produkte > IXG

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
IXG100IF1200HFIXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Produkt ist nicht verfügbar
IXG100NA60UIXYSMODULE
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
IXG50I4500KNIXYSDescription: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Produkt ist nicht verfügbar
IXG50I4500KNIXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
Produkt ist nicht verfügbar
IXG611P1IXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8DIP
Produkt ist nicht verfügbar
IXG611S1IXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
Produkt ist nicht verfügbar
IXG611S1T/RIXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
Produkt ist nicht verfügbar
IXG70IF1200NAIXYSDescription: IGBT MODULE - OTHERS SMPD-B
Produkt ist nicht verfügbar
IXG70IF1200NAIXYSIGBT Modules IGBT MODULE - OTHERS
Produkt ist nicht verfügbar
IXG70IF1200NAIXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXG70IF1200NAIXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
Produkt ist nicht verfügbar
IXGA 15N120CIXYSLittelfuse
Produkt ist nicht verfügbar
IXGA10N60
Produktcode: 98637		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGA120N30TCIXYSDescription: IGBT 300V 120A 250W TO263AA
Produkt ist nicht verfügbar
IXGA12N100IXYSDescription: IGBT 1000V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA12N100IXYSIGBT Transistors 24Amps 1000V
Produkt ist nicht verfügbar
IXGA12N100AIXYSIGBT Transistors
Produkt ist nicht verfügbar
IXGA12N120A2IXYSIGBT Transistors 24 Amps 1200V 2.7 Rds
Produkt ist nicht verfügbar
IXGA12N120A2IXYSDescription: IGBT 1200V 24A 75W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/680ns
Switching Energy: 5.4mJ (off)
Test Condition: 960V, 12A, 100Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
Produkt ist nicht verfügbar
IXGA12N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGA12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA12N120A3IXYSIGBT Transistors 1200V, 12A IGBT; G Series
auf Bestellung 1253 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.09 EUR
10+ 11.86 EUR
50+ 10.06 EUR
100+ 9.57 EUR
250+ 9.31 EUR
500+ 9.15 EUR
1000+ 8.94 EUR
Mindestbestellmenge: 4
IXGA12N120A3IXYSDescription: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA12N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Produkt ist nicht verfügbar
IXGA12N120A3-TRLIXYSDescription: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA12N120A3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 22A 100W 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXGA12N120A3-TRLIXYSIGBT Transistors IXGA12N120A3 TRL
Produkt ist nicht verfügbar
IXGA12N60BIXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA12N60BD1IXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA12N60CIXYSIGBT Transistors 24 Amps 600V 2.7 Rds
Produkt ist nicht verfügbar
IXGA12N60CIXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA12N60CD1IXYSIGBT Transistors 24 Amps 600V 2.7 Rds
Produkt ist nicht verfügbar
IXGA12N60CD1IXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGA150N30TCIXYSDescription: IGBT 300V 150A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: TO-263AA
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
IXGA15N100CIXYSDescription: IGBT 1000V 30A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 850µJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA15N100CIXYSIGBT Transistors 30 Amps 1000V 3.5 Rds
Produkt ist nicht verfügbar
IXGA15N120BIXYSDescription: IGBT 1200V 30A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA15N120BIXYSIGBT Transistors 30 Amps 1200V 3.2 Rds
Produkt ist nicht verfügbar
IXGA15N120BLittelfuseTrans IGBT Chip N-CH 1200V 30A 150000mW 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXGA16N60B2IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA16N60C2IXYSIGBT Transistors 16 Amps 600V 3.0V Rds
Produkt ist nicht verfügbar
IXGA16N60C2IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3.0V Rds
Produkt ist nicht verfügbar
IXGA16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA20N100IXYSIGBT Transistors 40 Amps 1000V 3 Rds
Produkt ist nicht verfügbar
IXGA20N100IXYSDescription: IGBT 1000V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA20N100-TRLLittelfuseLittelfuse DISC IGBT NPT-VERY HI VOLTAGE
Produkt ist nicht verfügbar
IXGA20N120LittelfuseTrans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXGA20N120IXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
Produkt ist nicht verfügbar
IXGA20N120IXYSDescription: IGBT 1200V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA20N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
Type of transistor: IGBT
Gate charge: 50nC
Produkt ist nicht verfügbar
IXGA20N120A3IXYSDescription: IGBT PT 1200V 40A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Produkt ist nicht verfügbar
IXGA20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA20N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
Type of transistor: IGBT
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGA20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA20N120A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
auf Bestellung 40 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.92 EUR
10+ 14.9 EUR
50+ 11.91 EUR
Mindestbestellmenge: 4
IXGA20N120A3
Produktcode: 56134		IXYSTransistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-263
Vces: 1200
Vce: 2,5
Ic 25: 40
Ic 100: 20
Pd 25: 180
td(on)/td(off) 100-150 Grad: 16/290
Produkt ist nicht verfügbar
IXGA20N120A3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXGA20N120A3-TRLIXYSIGBT Transistors IXGA20N120A3 TRL
Produkt ist nicht verfügbar
IXGA20N120A3-TRLIXYSDescription: IXGA20N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Produkt ist nicht verfügbar
IXGA20N120BIXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
Produkt ist nicht verfügbar
IXGA20N120BIXYSDescription: IGBT 1200V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA20N120B3IXYSDescription: IGBT 1200V 36A 180W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
Produkt ist nicht verfügbar
IXGA20N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
Type of transistor: IGBT
Gate charge: 51nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGA20N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
Type of transistor: IGBT
Gate charge: 51nC
Produkt ist nicht verfügbar
IXGA20N120B3IXYSIGBT Modules GenX3 1200V IGBTs
Produkt ist nicht verfügbar
IXGA20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA20N120B3-TRLIXYSIGBT Transistors IXGA20N120B3 TRL
Produkt ist nicht verfügbar
IXGA20N120B3-TRLIXYSDescription: IXGA20N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
Produkt ist nicht verfügbar
IXGA20N250HVIXYSDescription: DISC IGBT NPT-VERY HI VOLTAGE TO
Produkt ist nicht verfügbar
IXGA20N250HVLittelfuseHigh Voltage IGBT
Produkt ist nicht verfügbar
IXGA20N250HVIXYSIGBT Transistors IGBT NPT-VERY HIVOLT
auf Bestellung 43 Stücke:
Lieferzeit 14-28 Tag (e)
1+140.61 EUR
10+ 127.82 EUR
25+ 123.55 EUR
50+ 121.16 EUR
100+ 116.12 EUR
250+ 114.32 EUR
500+ 112.55 EUR
IXGA20N250HV-TRLIXYSIGBT Transistors DISC IGBT NPT-VERY HI VOLTAGE
Produkt ist nicht verfügbar
IXGA20N250HV-TRLIXYSDescription: DISC IGBT NPT VERY HI VOLTAGE TO
Produkt ist nicht verfügbar
IXGA20N60BIXYSIGBT Transistors 40 Amps 600V 2 Rds
Produkt ist nicht verfügbar
IXGA20N60BIXYSDescription: IGBT 600V 40A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA24N120C3IXYSDescription: IGBT 1200V 48A 250W TO263
Produkt ist nicht verfügbar
IXGA24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA24N120C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO263
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
Produkt ist nicht verfügbar
IXGA24N120C3IXYSIGBT Modules 40khz PT IGBTs Power Device
Produkt ist nicht verfügbar
IXGA24N120C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO263
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGA24N60CIXYSDescription: IGBT 600V 48A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGA28N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGA30N120B3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGA30N120B3 - IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
IXGA30N120B3IXYSIGBT Transistors GenX3 1200V IGBT
auf Bestellung 3995 Stücke:
Lieferzeit 14-28 Tag (e)
3+19.06 EUR
10+ 16.77 EUR
50+ 14.25 EUR
100+ 13.73 EUR
500+ 13.47 EUR
1000+ 13.21 EUR
Mindestbestellmenge: 3
IXGA30N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGA30N120B3LittelfuseTrans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA30N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
IXGA30N120B3IXYSDescription: IGBT 1200V 60A 300W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
auf Bestellung 145 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.9 EUR
50+ 15.09 EUR
100+ 13.5 EUR
Mindestbestellmenge: 2
IXGA30N120B3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXGA30N120B3-TRLIXYSDescription: IXGA30N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGA30N120B3-TRLIXYSIGBT Transistors IXGA30N120B3 TRL
Produkt ist nicht verfügbar
IXGA30N120B3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 60A 300W 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXGA30N60C3IXYSDescription: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGA30N60C3C1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
Produkt ist nicht verfügbar
IXGA30N60C3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
auf Bestellung 300 Stücke:
Lieferzeit 14-28 Tag (e)
IXGA30N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA30N60C3C1IXYSDescription: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGA30N60C3D4IXYSIGBT Transistors 600V 30A
Produkt ist nicht verfügbar
IXGA30N60C3D4LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXGA30N60C3D4IXYSDescription: IGBT 600V 60A 220W TO263
Produkt ist nicht verfügbar
IXGA36N60A3IXYSIGBT Transistors Disc IGBT PT-Low Frequency TO-263D2
Produkt ist nicht verfügbar
IXGA36N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGA42N30C3IXYSIXGA42N30C3 SMD IGBT transistors
Produkt ist nicht verfügbar
IXGA42N30C3IXYSDescription: IGBT 300V 223W TO263AA
Produkt ist nicht verfügbar
IXGA48N60A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.46 EUR
13+ 5.81 EUR
17+ 4.22 EUR
Mindestbestellmenge: 12
IXGA48N60A3IXYSDescription: IGBT 600V 120A 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGA48N60A3IXYSIGBT Transistors 48 Amps 600V
auf Bestellung 491 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.3 EUR
10+ 12.01 EUR
50+ 10.19 EUR
100+ 8.87 EUR
250+ 8.24 EUR
500+ 8.19 EUR
1000+ 6.99 EUR
Mindestbestellmenge: 4
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA48N60A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 213 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.46 EUR
13+ 5.81 EUR
17+ 4.22 EUR
Mindestbestellmenge: 12
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXGA48N60A3-TRLIXYSDescription: IXGA48N60A3 TRL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 4745 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.2 EUR
10+ 11.91 EUR
100+ 9.64 EUR
Mindestbestellmenge: 2
IXGA48N60A3-TRLIXYSDescription: IXGA48N60A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
800+8.56 EUR
1600+ 7.33 EUR
2400+ 6.91 EUR
Mindestbestellmenge: 800
IXGA48N60A3-TRLIXYSIGBT Transistors IXGA48N60A3 TRL
auf Bestellung 643 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.3 EUR
10+ 12.01 EUR
25+ 11.62 EUR
100+ 9.72 EUR
250+ 9.41 EUR
500+ 8.63 EUR
800+ 6.97 EUR
Mindestbestellmenge: 4
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
IXGA48N60B3IXYSIGBT Transistors 48 Amps 600V
Produkt ist nicht verfügbar
IXGA48N60B3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA48N60B3IXYSDescription: IGBT 600V 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGA48N60B3-TRLIXYSDescription: IXGA48N60B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGA48N60B3-TRLIXYSIGBT Transistors IXGA48N60B3 TRL
Produkt ist nicht verfügbar
IXGA48N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXGA48N60C3IXYSIGBT Transistors 48 Amps 600V
Produkt ist nicht verfügbar
IXGA48N60C3IXYSDescription: IGBT 600V 75A 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGA48N60C3-TRLIXYSIGBT Transistors IXGA48N60C3 TRL
Produkt ist nicht verfügbar
IXGA48N60C3-TRLIXYSDescription: IXGA48N60C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGA4N100IXYSDescription: IGBT 1000V 8A 40W TO263AA
Produkt ist nicht verfügbar
IXGA4N100IXYSIGBT Transistors 8 Amps 1000V 2.7 Rds
Produkt ist nicht verfügbar
IXGA50N60C4IXYSDescription: IGBT 600V 90A 300W TO263
Produkt ist nicht verfügbar
IXGA7N60BIXYSIGBT Transistors 14 Amps 600V 2.0 Rds
Produkt ist nicht verfügbar
IXGA7N60BIXYSDescription: IGBT 600V 14A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
Produkt ist nicht verfügbar
IXGA7N60BD1IXYSDescription: IGBT 600V 14A 80W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 10ns/100ns
Switching Energy: 300µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
IXGA7N60CIXYSDescription: IGBT 600V 14A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/65ns
Switching Energy: 70µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
Produkt ist nicht verfügbar
IXGA7N60CIXYSIGBT Transistors 14 Amps 600V 2.7 Rds
Produkt ist nicht verfügbar
IXGA7N60CD1IXYSDescription: IGBT 600V 14A 75W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 10ns/65ns
Switching Energy: 120µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 75 W
Produkt ist nicht verfügbar
IXGA7N60CD1IXYSIGBT Transistors 14 Amps 600V 2.7 Rds
Produkt ist nicht verfügbar
IXGA8N100IXYSIGBT Transistors 16 Amps 1000V 2.7 Rds
Produkt ist nicht verfügbar
IXGA8N100IXYSDescription: IGBT 1000V 16A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/600ns
Switching Energy: 2.3mJ (off)
Test Condition: 800V, 8A, 120Ohm, 15V
Gate Charge: 26.5 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 54 W
Produkt ist nicht verfügbar
IXGA90N33TCIXYSDescription: IGBT 330V 90A 200W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
Supplier Device Package: TO-263AA
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGB200N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 1250mW 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXGB200N60B3IXYSIGBT Transistors GenX3 600V IGBT
auf Bestellung 23 Stücke:
Lieferzeit 14-28 Tag (e)
IXGB200N60B3IXYSDescription: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXGB75N60BD1IXYSDescription: IGBT 600V 120A 360W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 62ns/220ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 75A, 5Ohm, 15V
Gate Charge: 248 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
Produkt ist nicht verfügbar
IXGC12N60CIXYSDescription: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
Produkt ist nicht verfügbar
IXGC12N60CD1IXYSDescription: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
Produkt ist nicht verfügbar
IXGC16N60B2IXYSDescription: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
Produkt ist nicht verfügbar
IXGC16N60B2D1IXYSDescription: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
Produkt ist nicht verfügbar
IXGC16N60C2IXYSIGBT Transistors 8 Amps 600V 3 V Rds
Produkt ist nicht verfügbar
IXGC16N60C2IXYSDescription: IGBT 600V 20A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
Produkt ist nicht verfügbar
IXGC16N60C2D1IXYSDescription: IGBT 600V 20A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
Produkt ist nicht verfügbar
IXGC16N60C2D1IXYSIGBT Transistors 8 Amps 600V 3 V Rds
Produkt ist nicht verfügbar
IXGE200N60BIXYSIGBT Transistors 175 Amps 600V 2.1 Rds
Produkt ist nicht verfügbar
IXGE200N60BIXYSDescription: IGBT MOD 600V 160A ISOPLUS227
Packaging: Tube
Package / Case: ISOPLUS227™
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: ISOPLUS227™
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Produkt ist nicht verfügbar
IXGF20N250IXYSIGBT Transistors DiscIGBT NPT-Very Hi Voltage I4-PAK ISO+
Produkt ist nicht verfügbar
IXGF20N250IXYSDescription: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGF20N300IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
2+52.05 EUR
Mindestbestellmenge: 2
IXGF20N300LittelfuseTrans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF20N300IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
2+52.05 EUR
Mindestbestellmenge: 2
IXGF20N300IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
Produkt ist nicht verfügbar
IXGF20N300LittelfuseTrans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF20N300IXYSDescription: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
1+123.03 EUR
25+ 103.08 EUR
100+ 96.21 EUR
IXGF25N250LittelfuseTrans IGBT Chip N-CH 2500V 30A 114000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF25N250IXYSIGBT Transistors IGBT NPT-VERY HIVOLT
Produkt ist nicht verfügbar
IXGF25N250IXYSDescription: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
Produkt ist nicht verfügbar
IXGF25N250
Produktcode: 149950		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGF25N300IXYSDescription: IGBT 3000V 27A 114W I4-PAK
Produkt ist nicht verfügbar
IXGF25N300LittelfuseTrans IGBT Chip N-CH 3000V 27A 114000mW 3-Pin ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF25N300IXYSIGBT Transistors
Produkt ist nicht verfügbar
IXGF30N400
Produktcode: 167341		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGF30N400LittelfuseTrans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF30N400IXYSIGBT Transistors IGBT NPT-HI VOLTAGE
Produkt ist nicht verfügbar
IXGF30N400IXYSDescription: IGBT 4000V 30A 160W I4-PAK
Produkt ist nicht verfügbar
IXGF30N400LittelfuseTrans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF32N170LittelfuseTrans IGBT Chip 1700V 44A 200000mW 3-Pin ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF32N170IXYSIGBT Transistors 26 Amps 1700V 3.5 V Rds
auf Bestellung 151 Stücke:
Lieferzeit 14-28 Tag (e)
1+60.09 EUR
10+ 53.38 EUR
50+ 52.03 EUR
100+ 46.67 EUR
500+ 40.07 EUR
IXGF32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGF32N170IXYSDescription: IGBT 1700V 44A 200W I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 10.6mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 200 W
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
1+59.67 EUR
25+ 49.45 EUR
100+ 46.36 EUR
IXGF32N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGF32N170 - IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.5
DC-Kollektorstrom: 44
Anzahl der Pins: 3
Bauform - Transistor: ISOPLUS i4-PAC
Kollektor-Emitter-Spannung V(br)ceo: 1.7
Verlustleistung Pd: 200
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXGF32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGF36N300LittelfuseTrans IGBT Chip N-CH 3000V 36A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
Produkt ist nicht verfügbar
IXGF36N300IXYSIGBT Transistors
Produkt ist nicht verfügbar
IXGF36N300IXYSDescription: IGBT 3000V 36A 160W I4-PAK
Produkt ist nicht verfügbar
IXGH100N30C3IXYSIGBT Transistors 100 Amps 300V
Produkt ist nicht verfügbar
IXGH100N30C3IXYSDescription: IGBT 300V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/105ns
Switching Energy: 230µJ (on), 520µJ (off)
Test Condition: 200V, 50A, 2Ohm, 15V
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 460 W
Produkt ist nicht verfügbar
IXGH10N100IXYSDescription: IGBT 1000V 20A 100W TO247AD
Produkt ist nicht verfügbar
IXGH10N100IXYSIGBT Transistors 1000V 20A
Produkt ist nicht verfügbar
IXGH10N100AIXYSIGBT Transistors 10 Amps 1000V 4 Rds
Produkt ist nicht verfügbar
IXGH10N100AIXYSDescription: IGBT 1000V 20A 100W TO247AD
Produkt ist nicht verfügbar
IXGH10N100AU1IXYSDescription: IGBT 1000V 20A 100W TO247AD
Produkt ist nicht verfügbar
IXGH10N100U1IXYSDescription: IGBT 1000V 20A 100W TO247AD
Produkt ist nicht verfügbar
IXGH10N170IXYSIGBT Transistors 20 Amps 1700 V 4 V Rds
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.91 EUR
10+ 20.7 EUR
30+ 19.76 EUR
120+ 17.13 EUR
Mindestbestellmenge: 3
IXGH10N170IXYSDescription: IGBT 1700V 20A 110W TO247
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.98 EUR
Mindestbestellmenge: 2
IXGH10N170IXYSIXGH10N170 THT IGBT transistors
Produkt ist nicht verfügbar
IXGH10N170AIXYSIXGH10N170A THT IGBT transistors
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
8+10.2 EUR
10+ 7.29 EUR
Mindestbestellmenge: 8
IXGH10N170ALittelfuseTrans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH10N170ALittelfuseTrans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH10N170AIXYSIGBT Transistors 20 Amps 1700 V 7 V Rds
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
3+25.58 EUR
10+ 23.11 EUR
30+ 22.05 EUR
120+ 19.14 EUR
Mindestbestellmenge: 3
IXGH10N170AIXYSDescription: IGBT 1700V 10A 140W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
2+24 EUR
10+ 21.69 EUR
Mindestbestellmenge: 2
IXGH10N300Ixys CorporationTrans IGBT Chip N-CH 3000V 18A 100mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH10N300IXYSDescription: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH120N30B3IXYSDescription: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
Produkt ist nicht verfügbar
IXGH120N30B3IXYSIGBT Transistors 120 Amps 300V
Produkt ist nicht verfügbar
IXGH120N30B3IXYSIXGH120N30B3 THT IGBT transistors
Produkt ist nicht verfügbar
IXGH120N30C3IXYSIXGH120N30C3 THT IGBT transistors
Produkt ist nicht verfügbar
IXGH120N30C3IXYSIGBT Transistors 120 Amps 300V
Produkt ist nicht verfügbar
IXGH120N30C3IXYSDescription: IGBT 300V 75A 540W TO247
Produkt ist nicht verfügbar
IXGH12N100IXYSIGBT Transistors 24Amps 1000V
Produkt ist nicht verfügbar
IXGH12N100IXYSDescription: IGBT 1000V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH12N120A2D1IXYSMOSFET 24 Amps 1200V 2.7 Rds
Produkt ist nicht verfügbar
IXGH12N120A2D1IXYSDescription: IGBT 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
IXGH12N120A3IXYSIGBT Modules GenX3 1200V IGBTs
Produkt ist nicht verfügbar
IXGH12N120A3IXYSDescription: IGBT 1200V 22A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Produkt ist nicht verfügbar
IXGH12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH12N60BIXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH12N60BD1IXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH12N60CIXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH12N60CD1IXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH12N90CIXYSIGBT Transistors 24 Amps 900V 3 Rds
Produkt ist nicht verfügbar
IXGH12N90CIXYSDescription: IGBT 900V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/135ns
Switching Energy: 320µJ (off)
Test Condition: 720V, 12A, 22Ohm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGH15N120BIXYSDescription: IGBT 1200V 30A 180W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
Produkt ist nicht verfügbar
IXGH15N120BIXYSIGBT Transistors 30 Amps 1200V 3.2 Rds
Produkt ist nicht verfügbar
IXGH15N120B2D1IXYSIGBT Transistors 30 Amps 1200V 2.7 V Rds
Produkt ist nicht verfügbar
IXGH15N120B2D1IXYSDescription: IGBT 1200V 30A 192W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 165 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/165ns
Switching Energy: 1.4mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 192 W
Produkt ist nicht verfügbar
IXGH15N120BD1IXYSDescription: IGBT 1200V 30A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH15N120BD1IXYSIGBT Transistors 30 Amps 1200V 3.2 Rds
Produkt ist nicht verfügbar
IXGH15N120CIXYSDescription: IGBT 1200V 30A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH15N120CD1IXYSMODULE
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH15N120CD1IXYSIGBT Transistors 30 Amps 1200V 3.8 Rds
Produkt ist nicht verfügbar
IXGH15N120CD1IXYSDescription: IGBT 1200V 30A 150W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH16N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH16N170IXYSIGBT Transistors 32 Amps 1700 V 3.5 V Rds
auf Bestellung 1129 Stücke:
Lieferzeit 14-28 Tag (e)
2+30.6 EUR
10+ 28.6 EUR
30+ 24.91 EUR
60+ 24.75 EUR
120+ 24.41 EUR
Mindestbestellmenge: 2
IXGH16N170IXYSDescription: IGBT 1700V 32A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/400ns
Switching Energy: 9.3mJ (off)
Test Condition: 1360V, 16A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
auf Bestellung 4130 Stücke:
Lieferzeit 21-28 Tag (e)
1+30.11 EUR
10+ 26.52 EUR
100+ 22.94 EUR
500+ 20.79 EUR
1000+ 19.07 EUR
IXGH16N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH16N170 - IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 190W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 32A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH16N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH16N170
Produktcode: 119539		IXYSTransistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 1700 V
Vce: 3,5 V
Ic 25: 32 A
Ic 100: 16 A
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH16N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH16N170AIXYSDescription: IGBT 1700V 16A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
auf Bestellung 1003 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.62 EUR
10+ 27.85 EUR
100+ 24.09 EUR
500+ 21.83 EUR
1000+ 20.02 EUR
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH16N170AIXYSIGBT Transistors 32 Amps 1700 V 5 V Rds
auf Bestellung 299 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.14 EUR
10+ 28.31 EUR
30+ 24.67 EUR
60+ 24.47 EUR
510+ 22.18 EUR
1020+ 21.89 EUR
Mindestbestellmenge: 2
IXGH16N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH16N170AH1IXYSDescription: IGBT 1700V 16A 190W TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH16N170AH1IXYSIGBT Transistors 11 Amps 1700V 5 Rds
Produkt ist nicht verfügbar
IXGH16N170AH1LittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH16N60B2IXYSIGBT Transistors 600V 16A
Produkt ist nicht verfügbar
IXGH16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH16N60B2D1IXYSIGBT Transistors 16 Amps 600V 2.3 V Rds
Produkt ist nicht verfügbar
IXGH16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3 V Rds
Produkt ist nicht verfügbar
IXGH16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH17N100LittelfuseTrans IGBT Chip N-CH 1000V 34A 150000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH17N100IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH17N100IXYSIGBT Transistors 17 Amps 1000V 4 Rds
Produkt ist nicht verfügbar
IXGH17N100Aixys07+
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH17N100AIXYSIGBT Transistors 17 Amps 1000V
Produkt ist nicht verfügbar
IXGH17N100AIXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH17N100AU1IXYSIGBT Transistors 17 Amps 1000V
Produkt ist nicht verfügbar
IXGH17N100AU1IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH17N100U1IXYSIGBT Transistors 17 Amps 1000V
Produkt ist nicht verfügbar
IXGH17N100U1IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH1961LittelfuseIXGH1961
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
39+4.01 EUR
Mindestbestellmenge: 39
IXGH1961LittelfuseIXGH1961
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
32+4.99 EUR
Mindestbestellmenge: 32
IXGH20N100IXYSDescription: IGBT 1000V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N120IXYSDescription: IGBT 1200V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N120IXYSIGBT Transistors 40 Amps 1200V 3 V Rds
Produkt ist nicht verfügbar
IXGH20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.88 EUR
12+ 6.28 EUR
13+ 5.93 EUR
30+ 5.85 EUR
Mindestbestellmenge: 10
IXGH20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH20N120A3IXYSDescription: IGBT 1200V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.33 EUR
30+ 14.63 EUR
120+ 13.09 EUR
510+ 11.55 EUR
Mindestbestellmenge: 2
IXGH20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.88 EUR
12+ 6.28 EUR
13+ 5.93 EUR
30+ 5.85 EUR
Mindestbestellmenge: 10
IXGH20N120A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
auf Bestellung 271 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.82 EUR
30+ 15.03 EUR
120+ 13.6 EUR
510+ 12.97 EUR
Mindestbestellmenge: 3
IXGH20N120A3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH20N120A3 - IGBT, 40A, 2.5V, 180W, 1.2kV, TO-247AD, 3 Pins
Kollektor-Emitter-Spannung, max.: 1.2
Verlustleistung: 180
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 40
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Sättigungsspannung: 2.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXGH20N120BIXYSDescription: IGBT 1200V 40A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH20N120BD1IXYSIGBT Transistors 20 Amps 1200V 3.40 Rds
Produkt ist nicht verfügbar
IXGH20N120BD1IXYSDescription: IGBT 1200V 40A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Gate Charge: 72 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH20N120IHIXYSMOSFET 20 Amps 1200V
Produkt ist nicht verfügbar
IXGH20N120IHIXYSDescription: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
IXGH20N140C3H1IXYSDescription: IGBT 1400V 42A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/110ns
Switching Energy: 1.35mJ (on), 440µJ (off)
Test Condition: 700V, 20A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH20N140C3H1IXYSIGBT Transistors GenX3 1400V IGBTs w/ Diode
Produkt ist nicht verfügbar
IXGH20N160IXYSIGBT Transistors 600V 40A
Produkt ist nicht verfügbar
IXGH20N160IXYSDescription: IGBT 600V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
IXGH20N60IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N60AIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N60AU1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N60BIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N60BD1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH20N60BU1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH22N140IHIXYSMOSFET 22 Amps 1400V
Produkt ist nicht verfügbar
IXGH22N140IHIXYSDescription: IGBT 1400V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1400 V
Produkt ist nicht verfügbar
IXGH240N30PBIXYSIGBT Transistors 240 Amps 300V
Produkt ist nicht verfügbar
IXGH240N30PBIXYSDescription: IGBT 300V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
IXGH24N120C3IXYSIGBT Transistors 48 Amps 1200V
auf Bestellung 508 Stücke:
Lieferzeit 14-28 Tag (e)
3+20.7 EUR
10+ 19.08 EUR
120+ 15.78 EUR
270+ 14.33 EUR
510+ 13.47 EUR
1020+ 12.43 EUR
Mindestbestellmenge: 3
IXGH24N120C3IXYSDescription: IGBT 1200V 48A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
auf Bestellung 1178 Stücke:
Lieferzeit 21-28 Tag (e)
2+20.36 EUR
30+ 16.25 EUR
120+ 14.54 EUR
510+ 12.83 EUR
1020+ 11.55 EUR
Mindestbestellmenge: 2
IXGH24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Produkt ist nicht verfügbar
IXGH24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH24N120C3H1IXYSIGBT Transistors High Frequency Range 40khz C-IGBT w/Diode
Produkt ist nicht verfügbar
IXGH24N120C3H1IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH24N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Produkt ist nicht verfügbar
IXGH24N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH24N120IHIXYSIGBT Transistors 24 Amps 1200V
Produkt ist nicht verfügbar
IXGH24N120IHIXYSDescription: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH24N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.56 EUR
Mindestbestellmenge: 4
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH24N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH24N170 - IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 50A
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH24N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.56 EUR
Mindestbestellmenge: 4
IXGH24N170IXYSIGBT Transistors 50 Amps 1700V 3.3 V Rds
auf Bestellung 104 Stücke:
Lieferzeit 14-28 Tag (e)
2+50.83 EUR
10+ 44.8 EUR
30+ 42.35 EUR
60+ 41.13 EUR
120+ 38.71 EUR
510+ 35.07 EUR
1020+ 32.92 EUR
Mindestbestellmenge: 2
IXGH24N170IXYSDescription: IGBT 1700V 50A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 42ns/200ns
Switching Energy: 8mJ (off)
Test Condition: 1360V, 50A, 5Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
1+50 EUR
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH24N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH24N170AIXYSIGBT Transistors 24 Amps 1200 V 5 V Rds
Produkt ist nicht verfügbar
IXGH24N170AIXYSDescription: IGBT 1700V 24A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH24N170ALittelfuseTrans IGBT Chip N-CH 1700V 25A 250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH24N170ALittelfuseTrans IGBT Chip N-CH 1700V 25A 250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH24N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGH24N170AH1IXYSDescription: IGBT 1700V 24A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH24N170AH1IXYSIGBT Transistors High Voltage IGBT w/ Diode
Produkt ist nicht verfügbar
IXGH24N60AIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH24N60AIXYSMODULE
auf Bestellung 92 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH24N60AU1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 1.5mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH24N60BIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH24N60BU1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH24N60CIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH24N60C4IXYSDescription: IGBT 600V 56A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH24N60C4D1IXYSDescription: IGBT 600V 56A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH24N60CD1
Produktcode: 36487		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH24N60CD1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH25N100IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH25N100IXYSIGBT Transistors 1000V 50A
Produkt ist nicht verfügbar
IXGH25N100AIXYSIGBT Transistors HIGH SPEED IGBT 1000V 50A
Produkt ist nicht verfügbar
IXGH25N100AIXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH25N100AU1IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH25N100AU1IXYSIGBT Transistors 1000V 50A
Produkt ist nicht verfügbar
IXGH25N100U1IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH25N100U1IXYSIGBT Transistors 1000V 50A
Produkt ist nicht verfügbar
IXGH25N120IXYSDescription: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH25N120IXYSIGBT Transistors 50 Amps 1200V 3 Rds
Produkt ist nicht verfügbar
IXGH25N120AIXYSDescription: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH25N120AIXYSIGBT Transistors 25 Amps 1200V
Produkt ist nicht verfügbar
IXGH25N160LITTELFUSEDescription: LITTELFUSE - IXGH25N160 - TRANSISTOR, IGBT, 1.6KV, 75A, TO-247
Kollektor-Emitter-Spannung, max.: 1.6
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 75
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXGH25N160IXYSIGBT Transistors 75 Amps 1600V 2.5 Rds
auf Bestellung 224 Stücke:
Lieferzeit 14-28 Tag (e)
2+39.42 EUR
10+ 34.71 EUR
30+ 33.8 EUR
60+ 31.93 EUR
120+ 30.03 EUR
270+ 29.09 EUR
510+ 27.92 EUR
Mindestbestellmenge: 2
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH25N160IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300mW 3-Pin(3+Tab) TO-247
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+16.37 EUR
Mindestbestellmenge: 30
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH25N160IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300mW 3-Pin(3+Tab) TO-247
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+20 EUR
Mindestbestellmenge: 30
IXGH25N160IXYSDescription: IGBT 1600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH25N250LittelfuseTrans IGBT Chip N-CH 2500V 60A 250mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH25N250LittelfuseTrans IGBT Chip N-CH 2500V 60A 250000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH25N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGH25N250IXYSDescription: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH25N250IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
Produkt ist nicht verfügbar
IXGH25N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH26N50TO-220
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
30+5.05 EUR
31+ 4.81 EUR
50+ 4.58 EUR
Mindestbestellmenge: 30
IXGH28N120BIXYSIGBT Transistors 28 Amps 1200V 3.50 Rds
Produkt ist nicht verfügbar
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
30+5.06 EUR
31+ 4.82 EUR
50+ 4.6 EUR
Mindestbestellmenge: 30
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH28N120BIxysTrans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH28N120BD1IXYSDescription: IGBT 1200V 50A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 2.2mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH28N120BD1LittelfuseTrans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH28N120BD1IXYSIGBT Transistors 28 Amps 1200V 3.50 Rds
Produkt ist nicht verfügbar
IXGH28N140B3H1IXYSIGBT Transistors Mid-Frequency Range 15khz-40khz w/ Diode
Produkt ist nicht verfügbar
IXGH28N140B3H1IXYSDescription: IGBT 1400V 60A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH28N60A3IXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
Produkt ist nicht verfügbar
IXGH28N60A3IXYSDescription: IGBT
Produkt ist nicht verfügbar
IXGH28N60BIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/175ns
Switching Energy: 2mJ (off)
Test Condition: 480V, 28A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH28N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH28N60B3D1IXYSDescription: IGBT 600V 66A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 340µJ (on), 650µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
auf Bestellung 109 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.53 EUR
30+ 15.58 EUR
Mindestbestellmenge: 2
IXGH28N60B3D1IXYSIGBT Transistors 28 Amps 600V
auf Bestellung 179 Stücke:
Lieferzeit 14-28 Tag (e)
3+19.68 EUR
10+ 16.85 EUR
30+ 15.31 EUR
120+ 14.46 EUR
510+ 14.2 EUR
1020+ 13.91 EUR
2520+ 13.65 EUR
Mindestbestellmenge: 3
IXGH28N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
IXGH28N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 66A 190000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH28N60BD1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/175ns
Switching Energy: 2mJ (off)
Test Condition: 480V, 28A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH28N90BIXYSIGBT Transistors 51 Amps 900V 2.5 Rds
Produkt ist nicht verfügbar
IXGH28N90BIXYSDescription: IGBT 900V 51A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 1.2mJ (off)
Test Condition: 720V, 28A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH2N250IXYSDescription: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
Produkt ist nicht verfügbar
IXGH2N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.31 EUR
5+ 14.5 EUR
Mindestbestellmenge: 4
IXGH2N250LittelfuseTrans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH2N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)
4+20.31 EUR
5+ 14.5 EUR
Mindestbestellmenge: 4
IXGH2N250IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
auf Bestellung 406 Stücke:
Lieferzeit 14-28 Tag (e)
2+39.42 EUR
10+ 34.71 EUR
30+ 33.8 EUR
60+ 31.93 EUR
120+ 30.03 EUR
270+ 29.09 EUR
510+ 27.3 EUR
Mindestbestellmenge: 2
IXGH2N250LittelfuseTrans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N120B3LittelfuseTrans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N120B3IXYSIGBT Transistors IGBT PT-MID FREQUNCY
Produkt ist nicht verfügbar
IXGH30N120B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH30N120B3D1IXYSIGBT Transistors 60 Amps 1200V
auf Bestellung 151 Stücke:
Lieferzeit 14-28 Tag (e)
2+26.49 EUR
10+ 24.75 EUR
30+ 21.48 EUR
60+ 21.45 EUR
120+ 20.2 EUR
270+ 19.84 EUR
510+ 17.91 EUR
Mindestbestellmenge: 2
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH30N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH30N120B3D1IXYSDescription: IGBT 1200V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
auf Bestellung 282 Stücke:
Lieferzeit 21-28 Tag (e)
1+26.31 EUR
30+ 21.31 EUR
120+ 20.06 EUR
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH30N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Produkt ist nicht verfügbar
IXGH30N120B3D1 Транзистор IGBT 1200V 300W TO247AD
Produktcode: 162398		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH30N120BD1IXYSDescription: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
IXGH30N120BD1IXYSMOSFET 50 Amps 1200V 3.5 V Rds
Produkt ist nicht verfügbar
IXGH30N120C3H1IXYSIGBT Modules High Frequency Range 40khz C-IGBT w/Diode
Produkt ist nicht verfügbar
IXGH30N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH30N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
IXGH30N120C3H1IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH30N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH30N120IHIXYSDescription: IGBT 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
IXGH30N60AIXYSDescription: IGBT 600V 50A 200W TO247AD
Produkt ist nicht verfügbar
IXGH30N60BIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH30N60B2IXYSDescription: IGBT 600V 70A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/110ns
Switching Energy: 320µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH30N60B2IXYSIGBT Transistors 30 Amps 600V 1.8 V Rds
Produkt ist nicht verfügbar
IXGH30N60B2D1
Produktcode: 30215		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH30N60B2D1IXYSDescription: IGBT 600V 70A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/110ns
Switching Energy: 320µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH30N60B4IXYSDescription: IGBT 600V 66A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 440µJ (on), 700µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH30N60BD1IXYSDescription: IGBT 600V 60A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH30N60BU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH30N60BU1IXYSIGBT Transistors 60 Amps 600V 1.8 Rds
Produkt ist nicht verfügbar
IXGH30N60C2IXYSDescription: IGBT 600V 70A 190W TO247
Produkt ist nicht verfügbar
IXGH30N60C2D1IXYSDescription: IGBT 600V 70A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/70ns
Switching Energy: 190µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH30N60C2D4IXYSDescription: IGBT 600V 60A TO247AD
Produkt ist nicht verfügbar
IXGH30N60C3IXYSIGBT Modules 30 Amps 600V
Produkt ist nicht verfügbar
IXGH30N60C3IXYS/LittelfuseТранзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
2+4.86 EUR
10+ 4.18 EUR
100+ 3.68 EUR
Mindestbestellmenge: 2
IXGH30N60C3IXYSDescription: IGBT 600V 60A 220W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGH30N60C3LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N60C3C1IXYSDescription: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGH30N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N60C3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
auf Bestellung 49 Stücke:
Lieferzeit 14-28 Tag (e)
IXGH30N60C3C1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH30N60C3C1 - IGBT, Einzeltransistor, Siliziumkarbid, 60A, 3V, 220W, 600V, TO-247, 3 Pins
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 220
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 3
Kollektorstrom: 60
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N60C3D1
Produktcode: 164623		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH30N60C3D1IXYSIGBT Modules High Frequency Range 40khz C-IGBT w/Diod
auf Bestellung 489 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.11 EUR
10+ 14.09 EUR
30+ 14.07 EUR
Mindestbestellmenge: 4
IXGH30N60C3D1LITTELFUSEDescription: LITTELFUSE - IXGH30N60C3D1 - IGBT, 60 A, 2.6 V, 220 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.6V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 220W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
22+7.43 EUR
23+ 6.85 EUR
25+ 6.45 EUR
Mindestbestellmenge: 22
IXGH30N60C3D1IXYSDescription: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
auf Bestellung 1399 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.58 EUR
30+ 15.62 EUR
120+ 13.97 EUR
510+ 12.33 EUR
1020+ 11.1 EUR
Mindestbestellmenge: 2
IXGH31N60IXYSDescription: IGBT 600V 60A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/400ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH31N60IXYSIGBT Transistors 60 Amps 600V 1.7 Rds
Produkt ist nicht verfügbar
IXGH31N60D1IXYSDescription: IGBT 600V 60A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/400ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH31N60D1IXYSIGBT Transistors 60 Amps 600V 1.7 Rds
Produkt ist nicht verfügbar
IXGH31N60U1IXYSIGBT Transistors
Produkt ist nicht verfügbar
IXGH32N100A3IXYSDescription: IGBT 1000V 75A 300W TO247AD
Produkt ist nicht verfügbar
IXGH32N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH32N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
Produkt ist nicht verfügbar
IXGH32N120A3IXYSDescription: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
auf Bestellung 62 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.56 EUR
30+ 20.41 EUR
Mindestbestellmenge: 2
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
16+10.04 EUR
17+ 9.05 EUR
25+ 8.32 EUR
50+ 7.92 EUR
100+ 6.86 EUR
Mindestbestellmenge: 16
IXGH32N120A3IXYSIGBT Transistors 32 Amps 1200V
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
3+25.74 EUR
10+ 22.07 EUR
30+ 20.02 EUR
120+ 18.38 EUR
270+ 17.84 EUR
Mindestbestellmenge: 3
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH32N120A3LITTELFUSEDescription: LITTELFUSE - IXGH32N120A3 - IGBT, 75 A, 2.35 V, 300 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.35V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH32N170LittelfuseTrans IGBT Chip N-CH 1700V 75A 350W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH32N170IXYSIGBT Transistors 72 Amps 1700 V 3.3 V Rds
auf Bestellung 275 Stücke:
Lieferzeit 14-28 Tag (e)
2+51.25 EUR
10+ 49.01 EUR
30+ 44.88 EUR
60+ 43.34 EUR
120+ 42.28 EUR
270+ 40.4 EUR
510+ 38.22 EUR
Mindestbestellmenge: 2
IXGH32N170LittelfuseTrans IGBT Chip N-CH 1700V 75A 350000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH32N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH32N170 - IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 2.5
MSL: MSL 1 - unbegrenzt
Verlustleistung: 350
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 75
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXGH32N170
Produktcode: 140302		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXGH32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
4+22.24 EUR
Mindestbestellmenge: 4
IXGH32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.24 EUR
Mindestbestellmenge: 4
IXGH32N170IXYSDescription: IGBT 1700V 75A 350W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
1+55.72 EUR
IXGH32N170A
Produktcode: 129525		Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 1700 V
Vce: 5 V
Ic 25: 32 A
Ic 100: 21 A
td(on)/td(off) 100-150 Grad: 46/260
Produkt ist nicht verfügbar
IXGH32N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH32N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGH32N170AIXYSDescription: IGBT 1700V 32A 350W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
Produkt ist nicht verfügbar
IXGH32N170ALittelfuseTrans IGBT Chip N-CH 1700V 32A 350W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH32N170AIXYSIGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A
auf Bestellung 300 Stücke:
Lieferzeit 294-308 Tag (e)
1+58.89 EUR
IXGH32N170ALittelfuseTrans IGBT Chip N-CH 1700V 32A 350000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH32N60AIXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH32N60AU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/120ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60AU1IXYSIGBT Transistors 32 Amps 600V
Produkt ist nicht verfügbar
IXGH32N60BIXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH32N60BIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 800µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60BD1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60BU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60BU1IXYSIGBT Transistors 60 Amps 600V 2.3 Rds
Produkt ist nicht verfügbar
IXGH32N60CIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60CIXYSIGBT Transistors 60 Amps 600V 2.5 Rds
Produkt ist nicht verfügbar
IXGH32N60CD1IXYSMODULE
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH32N60CD1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH32N60CD1IXYSIGBT Transistors 60 Amps 600V 2.5 Rds
Produkt ist nicht verfügbar
IXGH32N60CD1 (IGBT-Transistor)
Produktcode: 49455		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
IXGH32N90B2IXYSDescription: IGBT 900V 64A 300W TO247
Produkt ist nicht verfügbar
IXGH32N90B2IXYSIGBT Transistors 32 Amps 900V 2.7 Rds
Produkt ist nicht verfügbar
IXGH32N90B2D1IXYSDescription: IGBT 900V 64A 300W TO247
Produkt ist nicht verfügbar
IXGH32N90B2D1IXYSIGBT Transistors 32 Amps 900V 2.7 Rds
Produkt ist nicht verfügbar
IXGH34N60B2IXYSDescription: IGBT 600V 70A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 13ns/150ns
Switching Energy: 640µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGH35N120BIXYSDescription: IGBT 1200V 70A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH35N120BIXYSIGBT Transistors 70 Amps 1200V 3.3 Rds
Produkt ist nicht verfügbar
IXGH35N120CIXYSDescription: IGBT 1200V 70A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH35N120CIXYSMODULE
auf Bestellung 86 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH35N120C транзистор IGBT
Produktcode: 109599		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH36N60A3IXYSIGBT Transistors GenX3 600V IGBTs
Produkt ist nicht verfügbar
IXGH36N60A3IXYSDescription: IGBT 600V 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGH36N60A3D4IXYSIGBT Transistors 36 Amps 600V 2 Rds
auf Bestellung 43 Stücke:
Lieferzeit 14-28 Tag (e)
IXGH36N60A3D4IXYSDescription: IGBT 600V 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 3 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
Produkt ist nicht verfügbar
IXGH36N60B3LITTELFUSEDescription: LITTELFUSE - IXGH36N60B3 - TRANSISTOR, IGBT, 600V, 92A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 250
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 92
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.5
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXGH36N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.12 EUR
12+ 6.41 EUR
15+ 4.88 EUR
16+ 4.6 EUR
Mindestbestellmenge: 11
IXGH36N60B3LittelfuseTrans IGBT Chip N-CH 600V 92A 250000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH36N60B3IXYSIGBT Transistors GenX3 600V IGBTs
auf Bestellung 1049 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.25 EUR
30+ 12.87 EUR
120+ 11.02 EUR
510+ 9.8 EUR
1020+ 8.68 EUR
2520+ 7.98 EUR
Mindestbestellmenge: 4
IXGH36N60B3IXYSDescription: IGBT 600V 92A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH36N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.12 EUR
12+ 6.41 EUR
15+ 4.88 EUR
16+ 4.6 EUR
Mindestbestellmenge: 11
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250000mW 3-Pin(3+Tab) TO-247
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
3+58.52 EUR
Mindestbestellmenge: 3
IXGH36N60B3C1IXYSIGBT Transistors 75Amps 600V
Produkt ist nicht verfügbar
IXGH36N60B3C1IXYSDescription: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH36N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXGH36N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
IXGH36N60B3D1IXYSDescription: IGBT 600V 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH36N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 36A 250000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH36N60B3D1IXYSIGBT Transistors 36 Amps 600V
Produkt ist nicht verfügbar
IXGH36N60B3D4IXYSIGBT Transistors 200 Amps 600V
Produkt ist nicht verfügbar
IXGH36N60B3D4IXYSDescription: IGBT 600V 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH38N60IXYSDescription: IGBT 600V 76A 200W TO247AD
Produkt ist nicht verfügbar
IXGH38N60U1IXYSDescription: IGBT 600V 76A 200W TO247AD
Produkt ist nicht verfügbar
IXGH39N60BIXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/250ns
Switching Energy: 4mJ (off)
Test Condition: 480V, 39A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH39N60BD1IXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/250ns
Switching Energy: 4mJ (off)
Test Condition: 480V, 39A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH39N60BD1
Produktcode: 25259		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH39N60BD1
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH40N120A2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH40N120A2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
Produkt ist nicht verfügbar
IXGH40N120A2IXYSIGBT Transistors SGL IGBT 1200V, 80A
auf Bestellung 122 Stücke:
Lieferzeit 14-28 Tag (e)
2+35.65 EUR
10+ 31.41 EUR
30+ 28.5 EUR
60+ 27.53 EUR
120+ 26.62 EUR
270+ 26.31 EUR
1020+ 26.29 EUR
Mindestbestellmenge: 2
IXGH40N120A2LittelfuseTrans IGBT Chip N-CH 1200V 75A 360000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH40N120A2IXYSDescription: IGBT 1200V 75A 360W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/420ns
Switching Energy: 15mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 360 W
Produkt ist nicht verfügbar
IXGH40N120B2D1IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/290ns
Switching Energy: 4.5mJ (on), 3mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
auf Bestellung 630 Stücke:
Lieferzeit 21-28 Tag (e)
1+47.06 EUR
30+ 38.1 EUR
120+ 35.86 EUR
510+ 32.5 EUR
IXGH40N120B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH40N120B2D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH40N120B2D1 - IGBT, 75 A, 2.9 V, 380 W, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 2.9
MSL: MSL 1 - unbegrenzt
Verlustleistung: 380
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 75
SVHC: No SVHC (07-Jul-2017)
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH40N120B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
Produkt ist nicht verfügbar
IXGH40N120B2D1IXYSIGBT Transistors IGBT, Diode 1200V, 75A
auf Bestellung 85 Stücke:
Lieferzeit 14-28 Tag (e)
2+47.4 EUR
10+ 41.76 EUR
30+ 39.52 EUR
60+ 38.35 EUR
120+ 36.09 EUR
270+ 35 EUR
510+ 33.05 EUR
Mindestbestellmenge: 2
IXGH40N120B2D1LittelfuseTrans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
IXGH40N120C3IXYSIGBT Transistors 75Amps 1200V
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
2+27.98 EUR
10+ 24.67 EUR
30+ 24 EUR
60+ 22.62 EUR
120+ 21.61 EUR
Mindestbestellmenge: 2
IXGH40N120C3IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
300+20.5 EUR
Mindestbestellmenge: 300
IXGH40N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 380W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH40N120C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH40N120C3D1 - IGBT, 75 A, 4.4 V, 380 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 4.4V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 380W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH40N120C3D1IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
auf Bestellung 289 Stücke:
Lieferzeit 21-28 Tag (e)
1+33.59 EUR
30+ 27.18 EUR
120+ 25.58 EUR
IXGH40N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH40N120C3D1
Produktcode: 182236		Verschiedene Bauteile > Verschiedene Bauteile 1
Produkt ist nicht verfügbar
IXGH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
IXGH40N120C3D1IXYSIGBT Transistors 75Amps 1200V
auf Bestellung 436 Stücke:
Lieferzeit 14-28 Tag (e)
2+33.83 EUR
10+ 29.82 EUR
30+ 27.4 EUR
60+ 27.35 EUR
120+ 25.74 EUR
510+ 25.43 EUR
Mindestbestellmenge: 2
IXGH40N30BD1IXYSMODULE
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH40N60IXYSIGBT Transistors G-series
Produkt ist nicht verfügbar
IXGH40N60IXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH40N60AIXYSIGBT Transistors G-series
Produkt ist nicht verfügbar
IXGH40N60AIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH40N60A3D1Littelfuse- TO-247
Produkt ist nicht verfügbar
IXGH40N60A3D1IXYSDescription: IGBT 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
IXGH40N60A3D1IXYSMOSFET 40 Amps 600V 1.25 Rds
Produkt ist nicht verfügbar
IXGH40N60BIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 2.7mJ (off)
Test Condition: 480V, 40A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH40N60B2IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/130ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 30A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH40N60B2D1
Produktcode: 67024		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH40N60B2D1IXYSIGBT Transistors 40 Amps 600V 1.7 V Rds
Produkt ist nicht verfügbar
IXGH40N60B2D1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/130ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 30A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH40N60CIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 850µJ (off)
Test Condition: 480V, 40A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH40N60CIXYSIGBT Transistors 75 Amps 600V 2.5 Rds
Produkt ist nicht verfügbar
IXGH40N60C2
auf Bestellung 17 Stücke:
Lieferzeit 21-28 Tag (e)
IXGH40N60C2IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH40N60C2IXYSIGBT Transistors 40 Amps 600V 2.7 V Rds
Produkt ist nicht verfügbar
IXGH40N60C2
Produktcode: 30177		Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 2,5
Ic 25: 75
Ic 100: 40
Produkt ist nicht verfügbar
IXGH40N60C2D1IXYSIGBT Transistors 75 Amps 600V 2.7 V Rds
Produkt ist nicht verfügbar
IXGH40N60C2D1IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH41N60IXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 41A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/600ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 41A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGH42N30C3IXYSIGBT Transistors 42 Amps 300V
Produkt ist nicht verfügbar
IXGH42N30C3IXYSDescription: IGBT 300V 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/113ns
Switching Energy: 120µJ (on), 150µJ (off)
Test Condition: 200V, 21A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 223 W
Produkt ist nicht verfügbar
IXGH45N120IXYSDescription: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60A3IXYSDescription: IGBT 600V 120A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 2830 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.64 EUR
30+ 13.29 EUR
120+ 11.89 EUR
510+ 10.49 EUR
1020+ 9.44 EUR
2010+ 8.85 EUR
Mindestbestellmenge: 2
IXGH48N60A3IXYSIGBT Transistors 75 Amps 600V 1.05 V Rds
auf Bestellung 543 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.74 EUR
10+ 14.38 EUR
30+ 13.03 EUR
120+ 11.96 EUR
270+ 10.74 EUR
510+ 9.78 EUR
1020+ 9.05 EUR
Mindestbestellmenge: 4
IXGH48N60A3
Produktcode: 133424		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH48N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 120A 300W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60A3LITTELFUSEDescription: LITTELFUSE - IXGH48N60A3 - TRANSISTOR, IGBT, 600V, 120A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 120
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.18
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXGH48N60A3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
IXGH48N60A3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60A3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH48N60A3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60A3D1IXYSDescription: IGBT 600V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 264 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.27 EUR
30+ 18.57 EUR
120+ 16.61 EUR
Mindestbestellmenge: 2
IXGH48N60A3D1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
Produkt ist nicht verfügbar
IXGH48N60B3IXYSDescription: IGBT 600V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60B3IXYSIGBT Modules 48 Amps 600V
Produkt ist nicht verfügbar
IXGH48N60B3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
Produkt ist nicht verfügbar
IXGH48N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
3+26.23 EUR
Mindestbestellmenge: 3
IXGH48N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
3+26.23 EUR
Mindestbestellmenge: 3
IXGH48N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60B3C1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.71 EUR
9+ 8.17 EUR
10+ 7.72 EUR
Mindestbestellmenge: 7
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.71 EUR
9+ 8.17 EUR
10+ 7.72 EUR
Mindestbestellmenge: 7
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60B3D1LITTELFUSEDescription: LITTELFUSE - IXGH48N60B3D1 - TRANSISTOR, IGBT, 600V, 48A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 48
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.8
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXGH48N60B3D1IXYSDescription: IGBT 600V 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60B3D1IXYSIGBT Transistors 75 Amps 600V 1.05 V Rds
auf Bestellung 669 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.92 EUR
10+ 23.01 EUR
30+ 18.69 EUR
120+ 17.08 EUR
270+ 16.69 EUR
510+ 15.05 EUR
1020+ 13.05 EUR
Mindestbestellmenge: 3
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60B3D1Ixys CorporationTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
30+13 EUR
60+ 11.68 EUR
120+ 10.62 EUR
180+ 9.75 EUR
Mindestbestellmenge: 30
IXGH48N60C3
Produktcode: 155510		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH48N60C3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH48N60C3 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 75
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.3
Betriebstemperatur, max.: 150
Produktpalette: GenX3
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH48N60C3IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60C3IXYSIGBT Transistors 48 Amps 600V
Produkt ist nicht verfügbar
IXGH48N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60C3C1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60C3C1IXYSIGBT Transistors 75Amps 600V
auf Bestellung 60 Stücke:
Lieferzeit 14-28 Tag (e)
IXGH48N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH48N60C3D1IXYSDescription: IGBT PT 600V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH48N60C3D1IXYSIGBT Transistors 30 Amps 600V
auf Bestellung 1260 Stücke:
Lieferzeit 301-315 Tag (e)
3+23.43 EUR
10+ 23.19 EUR
30+ 18.51 EUR
Mindestbestellmenge: 3
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH48N60C3D1
Produktcode: 108583		IXYSTransistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH48N60C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH48N60C3D1 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.3V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH48N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXGH48N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+ 23.84 EUR
6+ 11.91 EUR
IXGH4N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
IXGH4N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH4N250CIXYSDescription: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGH4N250CIXYSIGBT Modules High Voltage IGBTs
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
IXGH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
IXGH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH50N120C3IXYSDescription: IGBT 1200V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
1+39.34 EUR
IXGH50N120C3IXYSIGBT Transistors 75Amps 1200V
Produkt ist nicht verfügbar
IXGH50N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 460mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH50N60AIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGH50N60BIXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH50N60B2IXYSDescription: IGBT 600V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/190ns
Switching Energy: 550µJ (off)
Test Condition: 480V, 40A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGH50N60C2IXYSDescription: IGBT 600V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/115ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGH50N60C4IXYSDescription: IGBT 600V 90A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/270ns
Switching Energy: 950µJ (on), 840µJ (off)
Test Condition: 400V, 36A, 10Ohm, 15V
Gate Charge: 113 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH50N90B2IXYSDescription: IGBT 900V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGH50N90B2IXYSIGBT Transistors 50 Amps 900V 2.7 Rds
Produkt ist nicht verfügbar
IXGH50N90B2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.87 EUR
10+ 7.36 EUR
Mindestbestellmenge: 7
IXGH50N90B2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.87 EUR
10+ 7.36 EUR
Mindestbestellmenge: 7
IXGH50N90B2D1LittelfuseTrans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH50N90B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
Produkt ist nicht verfügbar
IXGH50N90B2D1LITTELFUSEDescription: LITTELFUSE - IXGH50N90B2D1 - IGBT, 75 A, 2.2 V, 400 W, 900 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 400W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: HiPerFAST Series
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
IXGH50N90B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH50N90B2D1LittelfuseTrans IGBT Chip N-CH 900V 75A 400W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH50N90B2D1IXYSDescription: IGBT PT 900V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
auf Bestellung 296 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.64 EUR
30+ 20.76 EUR
120+ 19.54 EUR
Mindestbestellmenge: 2
IXGH50N90B2D1IXYSIGBT Transistors 50 Amps 900V 2.7 Rds
auf Bestellung 258 Stücke:
Lieferzeit 14-28 Tag (e)
3+25.82 EUR
10+ 22.78 EUR
30+ 19.71 EUR
60+ 19.66 EUR
510+ 17.81 EUR
1020+ 16.35 EUR
Mindestbestellmenge: 3
IXGH56N60A3IXYSDescription: IGBT 600V 150A 330W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
Produkt ist nicht verfügbar
IXGH56N60A3IXYSIGBT Modules GenX3 600V IGBTs
Produkt ist nicht verfügbar
IXGH56N60A3LittelfuseTrans IGBT Chip N-CH 600V 150A 330000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH56N60B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-24
Produkt ist nicht verfügbar
IXGH56N60B3IXYSIGBT Transistors Disc IGBT PT-Mid Frequency TO-247AD
Produkt ist nicht verfügbar
IXGH56N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 56A 330000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH56N60B3D1IXYSDescription: IGBT 600V 330W TO247
Produkt ist nicht verfügbar
IXGH56N60B3D1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
Produkt ist nicht verfügbar
IXGH60N30C3IXYSIGBT Transistors 60 Amps 300V
auf Bestellung 44 Stücke:
Lieferzeit 14-28 Tag (e)
IXGH60N30C3LittelfuseTrans IGBT Chip N-CH 300V 75A 300000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH60N30C3IXYSDescription: IGBT 300V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/108ns
Switching Energy: 150µJ (on), 300µJ (off)
Test Condition: 200V, 30A, 5Ohm, 15V
Gate Charge: 101 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH60N60IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGH60N60IXYSIGBT Transistors HIGH SPEED IGBT N-CHAN 600V 75A
Produkt ist nicht verfügbar
IXGH60N60B2IXYSDescription: IGBT 600V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXGH60N60C2
Produktcode: 30178		Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 2,5
Ic 25: 75
Ic 100: 60
Pd 25: 480
verfügbar 1 Stück:
1+3.92 EUR
IXGH60N60C2IXYSIGBT Transistors 60 Amps 600V 2.5 V Rds
Produkt ist nicht verfügbar
IXGH60N60C2IXYSDescription: IGBT 600V 75A 480W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Produkt ist nicht verfügbar
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH60N60C3IXYSDescription: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 380 W
Produkt ist nicht verfügbar
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH60N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Produkt ist nicht verfügbar
IXGH60N60C3
Produktcode: 113398		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH60N60C3IXYSIGBT Transistors GenX3 600V IGBT
Produkt ist nicht verfügbar
IXGH60N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH60N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 380W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH60N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.27 EUR
9+ 8.31 EUR
Mindestbestellmenge: 6
IXGH60N60C3D1
Produktcode: 148221		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH60N60C3D1IXYSIGBT Modules 60 Amps 600V
auf Bestellung 1412 Stücke:
Lieferzeit 14-28 Tag (e)
2+26.6 EUR
10+ 22.8 EUR
30+ 18.62 EUR
120+ 18.54 EUR
Mindestbestellmenge: 2
IXGH60N60C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH60N60C3D1 - IGBT, 75 A, 2.2 V, 380 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 380W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
Produkt ist nicht verfügbar
IXGH60N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 271 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.27 EUR
9+ 8.31 EUR
Mindestbestellmenge: 6
IXGH60N60C3D1IXYSDescription: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 380 W
Produkt ist nicht verfügbar
IXGH64N60A3IXYSIGBT Modules GenX3 600V IGBTs
Produkt ist nicht verfügbar
IXGH64N60A3IXYSDescription: IGBT 600V 460W TO247
Produkt ist nicht verfügbar
IXGH64N60A3LittelfuseTrans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH64N60B3IXYSDescription: IGBT 600V 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
IXGH64N60B3IXYSIGBT Modules GenX3 600V IGBTs
Produkt ist nicht verfügbar
IXGH6N170IXYSIGBT Transistors 12 Amps 1700 V 4 V Rds
auf Bestellung 120 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.53 EUR
10+ 29.9 EUR
30+ 28.65 EUR
120+ 25.25 EUR
510+ 22.46 EUR
1020+ 21.19 EUR
2520+ 20.46 EUR
Mindestbestellmenge: 2
IXGH6N170LittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH6N170IXYSIXGH6N170 THT IGBT transistors
Produkt ist nicht verfügbar
IXGH6N170IXYSDescription: IGBT 1700V 12A 75W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/250ns
Switching Energy: 1.5mJ (off)
Test Condition: 1360V, 6A, 33Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 75 W
Produkt ist nicht verfügbar
IXGH6N170LittelfuseTrans IGBT Chip N-CH 1700V 6A 75mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH6N170AIXYSIXGH6N170A THT IGBT transistors
Produkt ist nicht verfügbar
IXGH6N170AIXYSDescription: IGBT 1700V 6A 75W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 590µJ (on), 180µJ (off)
Test Condition: 850V, 6A, 33Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 14 A
Power - Max: 75 W
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
1+34.61 EUR
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH6N170AIXYSIGBT Transistors 12 Amps 1700 V 7 V Rds
auf Bestellung 90 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.53 EUR
10+ 29.9 EUR
30+ 28.65 EUR
120+ 25.25 EUR
Mindestbestellmenge: 2
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH72N60A3LittelfuseTrans IGBT Chip N-CH 600V 78A 540mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH72N60A3IXYSIGBT Transistors 72 Amps 600V 1.35 Rds
auf Bestellung 465 Stücke:
Lieferzeit 14-28 Tag (e)
2+27.72 EUR
10+ 23.74 EUR
30+ 21.55 EUR
120+ 19.81 EUR
270+ 18.62 EUR
510+ 17.45 EUR
1020+ 16.35 EUR
Mindestbestellmenge: 2
IXGH72N60A3LittelfuseTrans IGBT Chip N-CH 600V 78A 540000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH72N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 235 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.84 EUR
8+ 9.42 EUR
9+ 8.91 EUR
Mindestbestellmenge: 6
IXGH72N60A3IXYSDescription: IGBT 600V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.46 EUR
10+ 24.81 EUR
IXGH72N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.84 EUR
8+ 9.42 EUR
9+ 8.91 EUR
Mindestbestellmenge: 6
IXGH72N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 540000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXGH72N60B3IXYSDescription: IGBT 600V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/150ns
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
Produkt ist nicht verfügbar
IXGH72N60C3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A
Produkt ist nicht verfügbar
IXGH72N60C3IXYSDescription: IGBT 600V 75A 540W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 174 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 540 W
Produkt ist nicht verfügbar
IXGH72N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGH72N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Produkt ist nicht verfügbar
IXGH72N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 540W 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH72N60C3
Produktcode: 73163		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGH85N30C3IXYSIGBT Transistors 85 Amps 300V
Produkt ist nicht verfügbar
IXGH85N30C3IXYSDescription: IGBT 300V 75A 333W TO247AD
Produkt ist nicht verfügbar
IXGH90N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
Produkt ist nicht verfügbar
IXGH90N60B3IXYSDescription: IGBT 600V 75A 660W TO247
Produkt ist nicht verfügbar
IXGH90N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 660000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXGH90N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
Produkt ist nicht verfügbar
IXGI48N60C3IXYSLittelfuse
Produkt ist nicht verfügbar
IXGJ40N60C2D1IXYSIGBT Transistors 40 Amps 600V 2.7 V Rds
Produkt ist nicht verfügbar
IXGJ40N60C2D1IXYSDescription: IGBT 600V 75A 300W TO268
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK 50N60A2D1IXYSLittelfuse
Produkt ist nicht verfügbar
IXGK100N170IXYSIGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
1+103.22 EUR
10+ 86.48 EUR
IXGK100N170LittelfuseTrans IGBT Chip N-CH 1700V 170A 830W 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK100N170LittelfuseTrans IGBT Chip N-CH 1700V 170A 830000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK100N170IXYSDescription: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
1+102.41 EUR
IXGK100N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
2+44.07 EUR
Mindestbestellmenge: 2
IXGK100N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.07 EUR
Mindestbestellmenge: 2
IXGK120N120A3IXYSDescription: IGBT PT 1200V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
auf Bestellung 53 Stücke:
Lieferzeit 21-28 Tag (e)
1+90.32 EUR
25+ 74.88 EUR
IXGK120N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK120N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
IXGK120N120A3IXYSIGBT Transistors 120 Amps 1200V
Produkt ist nicht verfügbar
IXGK120N120A3LittelfuseTrans IGBT Chip N-CH 1200V 240A 830W 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK120N120A3LittelfuseTrans IGBT Chip N-CH 1200V 240A 830000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK120N120B3IXYSIGBT Transistors 200Amps 1200V
auf Bestellung 16 Stücke:
Lieferzeit 14-28 Tag (e)
1+87.67 EUR
10+ 77.9 EUR
25+ 72.67 EUR
50+ 71.4 EUR
100+ 70.15 EUR
250+ 69.78 EUR
500+ 68.17 EUR
IXGK120N120B3IXYSDescription: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
300+63.14 EUR
Mindestbestellmenge: 300
IXGK120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
IXGK120N60BIXYSDescription: IGBT 600V 200A 660W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
Produkt ist nicht verfügbar
IXGK120N60B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
Produkt ist nicht verfügbar
IXGK120N60C2IXYSDescription: IGBT 600V 75A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/120ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 370 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 830 W
Produkt ist nicht verfügbar
IXGK28N140B3H1IXYSDescription: IGBT 1400V 60A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK28N140B3H1
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IXGK28N140B3H1IXYSIGBT Transistors 28 Amps 1400V
auf Bestellung 39 Stücke:
Lieferzeit 14-28 Tag (e)
IXGK300N60B3IXYSIGBT Modules 300 Amps 600V 1.6 Rds
Produkt ist nicht verfügbar
IXGK300N60B3IXYSDescription: IGBT 600V 1000W TO264AA
Packaging: Tube
Produkt ist nicht verfügbar
IXGK320N60A3IXYSIGBT Transistors 320 Amps 600V
auf Bestellung 25 Stücke:
Lieferzeit 14-28 Tag (e)
IXGK320N60A3IXYSDescription: IGBT 600V 320A 1000W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Gate Charge: 560 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1000 W
Produkt ist nicht verfügbar
IXGK320N60B3LittelfuseTrans IGBT Chip N-CH 600V 500A 1700000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK320N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
IXGK320N60B3IXYSIGBT Modules GenX3 600V IGBTs
auf Bestellung 187 Stücke:
Lieferzeit 14-28 Tag (e)
1+61.26 EUR
10+ 54.42 EUR
25+ 50.78 EUR
50+ 49.22 EUR
100+ 47.61 EUR
250+ 44.41 EUR
500+ 43.91 EUR
IXGK320N60B3IXYSDescription: IGBT 600V 500A 1700W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
Produkt ist nicht verfügbar
IXGK320N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK35N120BIXYSIGBT Transistors 70 Amps 1200V 3.3 V Rds
Produkt ist nicht verfügbar
IXGK35N120BIXYSDescription: IGBT 1200V 70A 350W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
Produkt ist nicht verfügbar
IXGK35N120BD1IXYSDescription: IGBT 1200V 70A 350W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
Produkt ist nicht verfügbar
IXGK35N120BD1IXYSIGBT Transistors 70 Amps 1200V 3.3 V Rds
Produkt ist nicht verfügbar
IXGK35N120CD1IXYSIGBT Transistors 70 Amps 1200V 4 V Rds
Produkt ist nicht verfügbar
IXGK35N120CD1IXYSDescription: IGBT 1200V 70A 350W PLUS247
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
Produkt ist nicht verfügbar
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK400N30A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 200A
Power dissipation: 1kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 560nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 565ns
Produkt ist nicht verfügbar
IXGK400N30A3IXYSDescription: IGBT PT 300V 400A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Gate Charge: 560 nC
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1000 W
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
1+61.31 EUR
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
7+24.99 EUR
10+ 23.36 EUR
Mindestbestellmenge: 7
IXGK400N30A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 200A
Power dissipation: 1kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 560nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 565ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK400N30A3IXYSIGBT Transistors 400 Amps 300V
auf Bestellung 29 Stücke:
Lieferzeit 14-28 Tag (e)
1+60.53 EUR
10+ 54.86 EUR
25+ 48.7 EUR
100+ 47.74 EUR
250+ 44.77 EUR
500+ 44.25 EUR
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK400N30B3IXYSIGBT Transistors 400 Amps 300V
Produkt ist nicht verfügbar
IXGK400N30B3IXYSDescription: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
IXGK400N30C3IXYSIGBT Transistors 400 Amps 300V
Produkt ist nicht verfügbar
IXGK400N30C3IXYSDescription: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Produkt ist nicht verfügbar
IXGK50N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK50N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
IXGK50N120C3H1IXYSIGBT Modules High Frequency Range 40khz C-IGBT w/Diode
Produkt ist nicht verfügbar
IXGK50N120C3H1IXYSDescription: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
Produkt ist nicht verfügbar
IXGK50N60A2U1IXYSDescription: IGBT 600V 75A 400W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 20ns/410ns
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 50A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGK50N60AU1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK50N60AU1IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGK50N60BIXYSDescription: IGBT 600V 75A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK50N60B2D1IXYSDescription: IGBT 600V 75A 400W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/190ns
Switching Energy: 550µJ (off)
Test Condition: 480V, 40A, 5Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGK50N60BD1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK50N60BU1IXYSIGBT Transistors 75 Amps 600V 2.3 Rds
Produkt ist nicht verfügbar
IXGK50N60BU1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK50N60C2D1IXYSDescription: IGBT 600V 75A 480W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/115ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Produkt ist nicht verfügbar
IXGK50N60C2D1IXYSIGBT Transistors 50 Amps 600V 2.5V Rds
Produkt ist nicht verfügbar
IXGK50N90B2D1IXYSIGBT Transistors 50 Amps 600V 3 Rds
Produkt ist nicht verfügbar
IXGK50N90B2D1IXYSDescription: IGBT 900V 75A 400W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGK55N120A3H1IXYSIGBT Modules Low-Frequency Range Low Vcesat w/ Diode
Produkt ist nicht verfügbar
IXGK55N120A3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK55N120A3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Produkt ist nicht verfügbar
IXGK55N120A3H1IXYSDescription: IGBT 1200V 125A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
IXGK60N60IXYSDescription: IGBT 600V 75A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXGK60N60B2D1IXYSTO-264 09+
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
IXGK60N60B2D1IXYSDescription: IGBT 600V 75A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Produkt ist nicht verfügbar
IXGK60N60B2D1IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGK60N60C2D1IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGK60N60C2D1IXYSDescription: IGBT 600V 75A 480W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
Produkt ist nicht verfügbar
IXGK60N60C2D1IXYSIGBT Transistors 60 Amps 600V 2.5 V Rds
Produkt ist nicht verfügbar
IXGK64N60B3D1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
IXGK64N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK64N60B3D1IXYSDescription: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
IXGK72N60A3H1IXYSDescription: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
Produkt ist nicht verfügbar
IXGK72N60A3H1IXYSIGBT Transistors 75Amps 600V
auf Bestellung 24 Stücke:
Lieferzeit 14-28 Tag (e)
IXGK72N60B3H1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
Produkt ist nicht verfügbar
IXGK72N60B3H1LittelfuseTrans IGBT Chip N-CH 600V 178A 540W 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXGK72N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK72N60B3H1IXYSDescription: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)
300+36.27 EUR
Mindestbestellmenge: 300
IXGK72N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
IXGK72N60C3H1IXYSIGBT Transistors 75Amps 600V
Produkt ist nicht verfügbar
IXGK72N60C3H1IXYSDescription: IGBT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXGK)
Part Status: Active
Produkt ist nicht verfügbar
IXGK75N250IXYSDescription: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
auf Bestellung 294 Stücke:
Lieferzeit 21-28 Tag (e)
1+274.07 EUR
25+ 238.7 EUR
100+ 226.32 EUR
IXGK75N250LittelfuseTrans IGBT Chip N-CH 2500V 170A 780W 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXGK75N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 75A
Power dissipation: 780W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Turn-on time: 280ns
Turn-off time: 725ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK75N250LittelfuseTrans IGBT Chip N-CH 2500V 170A 780000mW 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXGK75N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 75A
Power dissipation: 780W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Turn-on time: 280ns
Turn-off time: 725ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXGK75N250IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
auf Bestellung 436 Stücke:
Lieferzeit 14-28 Tag (e)
1+272.38 EUR
10+ 251.99 EUR
25+ 240.37 EUR
50+ 235.07 EUR
100+ 229.19 EUR
IXGK82N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Produkt ist nicht verfügbar
IXGK82N120A3IXYSIGBT Transistors GenX3 1200V IGBTs
Produkt ist nicht verfügbar
IXGK82N120A3IXYSDescription: IGBT 1200V 260A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXGK82N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK82N120B3IXYSDescription: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXGK82N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGK82N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Produkt ist nicht verfügbar
IXGK82N120B3IXYSIGBT Transistors GenX3 1200V IGBTs
Produkt ist nicht verfügbar
IXGL200N60B3IXYSIGBT Transistors 150Amps 600V
Produkt ist nicht verfügbar
IXGL200N60B3IXYSDescription: IGBT 600V 150A 400W ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXGL50N60BD1IXYSDescription: IGBT 600V ISOPLUS264
Produkt ist nicht verfügbar
IXGL75N250IXYSDescription: IGBT 2500V 110A 430W I5-PAK
Produkt ist nicht verfügbar
IXGM17N100AIXYSDescription: POWER MOSFET TO-3
Produkt ist nicht verfügbar
IXGM20N60IXYSDescription: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGM20N60AIXYSDescription: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGM25N100AIXYSTO-3 9352+
auf Bestellung 70 Stücke:
Lieferzeit 21-28 Tag (e)
IXGM25N100AIXYSDescription: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGM40N60IXYSDescription: IGBT 600V 75A 250W TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGM40N60AIXYSDescription: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Produkt ist nicht verfügbar
IXGM40N60ALIXYSDescription: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
IXGN100N120IXYSIGBT Transistors G-series
Produkt ist nicht verfügbar
IXGN100N120IXYSDescription: IGBT MODULE 1200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
IXGN100N160AIXYSDescription: IGBT MODULE 1600V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Produkt ist nicht verfügbar
IXGN100N160AIXYSIGBT Transistors 100 Amps 1600V
Produkt ist nicht verfügbar
IXGN100N170IXYSIGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A
auf Bestellung 296 Stücke:
Lieferzeit 14-28 Tag (e)
1+140.61 EUR
10+ 127.82 EUR
20+ 125.42 EUR
50+ 123.08 EUR
100+ 115.02 EUR
200+ 112.66 EUR
500+ 110.34 EUR
IXGN100N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 95A
Power dissipation: 735W
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
2+65.74 EUR
Mindestbestellmenge: 2
IXGN100N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 95A
Power dissipation: 735W
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
2+65.74 EUR
Mindestbestellmenge: 2
IXGN100N170LittelfuseTrans IGBT Module N-CH 1700V
Produkt ist nicht verfügbar
IXGN100N170LittelfuseTrans IGBT Module N-CH 1700V
Produkt ist nicht verfügbar
IXGN100N170IXYSDescription: IGBT MOD 1700V 160A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.22 nF @ 25 V
auf Bestellung 286 Stücke:
Lieferzeit 21-28 Tag (e)
1+139.62 EUR
10+ 126.91 EUR
100+ 114.22 EUR
IXGN120N60A3IXYSDescription: IGBT MOD 600V 200A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V
Produkt ist nicht verfügbar
IXGN120N60A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A
Produkt ist nicht verfügbar
IXGN120N60A3D1IXYSDescription: IGBT MOD 600V 200A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V
Produkt ist nicht verfügbar
IXGN120N60A3D1LittelfuseTrans IGBT Module N-CH 600V 200A 595000mW
Produkt ist nicht verfügbar
IXGN120N60A3D1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A
Produkt ist nicht verfügbar
IXGN200N170IXYSIGBT Transistors IGBT NPT-HIVOLTAGE (MINI
auf Bestellung 466 Stücke:
Lieferzeit 14-28 Tag (e)
1+160.11 EUR
10+ 145.55 EUR
20+ 140.69 EUR
50+ 135.82 EUR
100+ 130.99 EUR
200+ 130.08 EUR
IXGN200N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 160A
Power dissipation: 1.25kW
Technology: NPT
Pulsed collector current: 1.05kA
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGN200N170LITTELFUSEDescription: LITTELFUSE - IXGN200N170 - IGBT-Modul, Einfach, 280 A, 2.1 V, 1.25 kW, 150 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: -
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.1V
Dauer-Kollektorstrom: 280A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.1V
Verlustleistung Pd: 1.25kW
euEccn: NLR
Verlustleistung: 1.25kW
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 1.7kV
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 1.7kV
IGBT-Konfiguration: Einfach
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 280A
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
IXGN200N170LittelfuseIGBT Module, High Voltage IGBT
Produkt ist nicht verfügbar
IXGN200N170IXYSDescription: IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXGN200N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 160A
Power dissipation: 1.25kW
Technology: NPT
Pulsed collector current: 1.05kA
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
IXGN200N60IXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
IXGN200N60IXYSIGBT Transistors 200 Amps 600V
Produkt ist nicht verfügbar
IXGN200N60AIXYSMODULE
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN200N60AIXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN200N60AIXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
IXGN200N60A2IXYSDescription: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
Produkt ist nicht verfügbar
IXGN200N60BIXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Produkt ist nicht verfügbar
IXGN200N60BIXYSMODULE
auf Bestellung 268 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN200N60BIXYSTO220
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 830W
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
2+44.94 EUR
Mindestbestellmenge: 2
IXGN200N60B3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
auf Bestellung 211 Stücke:
Lieferzeit 14-28 Tag (e)
1+105.07 EUR
10+ 93.63 EUR
20+ 88.04 EUR
50+ 85.12 EUR
100+ 82.16 EUR
200+ 79.25 EUR
500+ 78.96 EUR
IXGN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 830W
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.94 EUR
Mindestbestellmenge: 2
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN200N60B3
Produktcode: 176713		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN200N60B3IXYSDescription: IGBT MOD 600V 300A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
auf Bestellung 865 Stücke:
Lieferzeit 21-28 Tag (e)
1+104.34 EUR
10+ 92.98 EUR
100+ 81.61 EUR
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN200N60B3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGN200N60B3 - IGBT-Modul, Einfach, 300 A, 1.35 V, 830 W, 150 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: Y-EX
IGBT-Technologie: PT IGBT [Standard]
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.35V
Dauer-Kollektorstrom: 300A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35V
Verlustleistung Pd: 830W
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: IGBT Module GenX3
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Einfach
productTraceability: No
Wandlerpolarität: n-Kanal
DC-Kollektorstrom: 300A
Betriebstemperatur, max.: 150°C
SVHC: Lead (17-Jan-2023)
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
IXGN20N90
Produktcode: 104856		Transistoren > Transistoren IGBT, Leistungsmodule
ZCODE: 8541290010
Produkt ist nicht verfügbar
IXGN320N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN320N60A3IXYSDescription: IGBT MOD 600V 320A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 1405 Stücke:
Lieferzeit 21-28 Tag (e)
1+86.87 EUR
10+ 77.39 EUR
100+ 67.93 EUR
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN320N60A3LITTELFUSEDescription: LITTELFUSE - IXGN320N60A3 - TRANSISTOR, IGBT, 600V, 320A, SOT-227B
tariffCode: 85412900
Transistormontage: Panel
rohsCompliant: YES
IGBT-Technologie: -
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.46V
Dauer-Kollektorstrom: 320A
usEccn: EAR99
IGBT-Anschluss: Tab
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.46V
Verlustleistung Pd: 735W
euEccn: NLR
Verlustleistung: 735W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 600V
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Single
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 320A
Betriebstemperatur, max.: 150°C
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXGN320N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGN320N60A3IXYSIGBT Transistors 320 Amps 600V
auf Bestellung 133 Stücke:
Lieferzeit 14-28 Tag (e)
1+87.46 EUR
10+ 77.92 EUR
20+ 73.29 EUR
50+ 70.85 EUR
100+ 68.41 EUR
200+ 65.94 EUR
500+ 62.89 EUR
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN400N30A3IXYSIGBT Transistors 400 Amps 300V 1.15 V Rds
Produkt ist nicht verfügbar
IXGN400N30A3LittelfuseTrans IGBT Module N-CH 300V 400A 735000mW
Produkt ist nicht verfügbar
IXGN400N30A3IXYSDescription: IGBT MOD 300V 400A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Produkt ist nicht verfügbar
IXGN400N60A3IXYSIGBT Transistors 400 Amps 600V
auf Bestellung 314 Stücke:
Lieferzeit 14-28 Tag (e)
1+123.99 EUR
10+ 103.56 EUR
20+ 99.76 EUR
50+ 97.79 EUR
100+ 97.37 EUR
IXGN400N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGN400N60A3LittelfuseTrans IGBT Module N-CH 600V
Produkt ist nicht verfügbar
IXGN400N60A3IXYSDescription: IGBT MOD 600V 400A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
Produkt ist nicht verfügbar
IXGN400N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXGN400N60A3LittelfuseTrans IGBT Module N-CH 600V
Produkt ist nicht verfügbar
IXGN400N60B3LittelfuseTrans IGBT Module N-CH 600V 430A 1000000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN400N60B3IXYSDescription: IGBT MOD 600V 430A 1000W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
auf Bestellung 285 Stücke:
Lieferzeit 21-28 Tag (e)
1+119.81 EUR
10+ 106.75 EUR
100+ 93.7 EUR
IXGN400N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Technology: GenX3™; PT
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
IXGN400N60B3IXYSIGBT Modules Mid-Frequency Range PT IGBTs
auf Bestellung 121 Stücke:
Lieferzeit 14-28 Tag (e)
1+120.64 EUR
10+ 107.48 EUR
20+ 101.09 EUR
50+ 97.71 EUR
100+ 94.35 EUR
200+ 92.82 EUR
IXGN400N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Technology: GenX3™; PT
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGN40N60CD1IXYSDescription: IGBT MODULE 600V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
IXGN50N120C3H1IXYSIGBT Modules High Frequency Range >40khz CIGBT w/Diode
Produkt ist nicht verfügbar
IXGN50N120C3H1IXYSDescription: IGBT MOD 1200V 95A 460W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
IXGN50N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
2+38.84 EUR
Mindestbestellmenge: 2
IXGN50N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 95A 460000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXGN50N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
2+38.84 EUR
Mindestbestellmenge: 2
IXGN50N60BIXYSDescription: IGBT MOD 600V 75A 300W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
Produkt ist nicht verfügbar
IXGN50N60BD2IXYSDescription: IGBT MOD 600V 75A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
Produkt ist nicht verfügbar
IXGN50N60BD3IXYSDescription: IGBT MOD 600V 75A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
Produkt ist nicht verfügbar
IXGN50N60BD3ABB07+;
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN50N60BD3IXYSMODULE
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IXGN50N60BD3IXYS
auf Bestellung 100 Stücke:
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IXGN60N60IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN60N60IXYSDescription: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Produkt ist nicht verfügbar
IXGN60N60
Produktcode: 173038		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGN60N60IXYSIGBT Transistors ULTRA LOW VCE 600V 100A
Produkt ist nicht verfügbar
IXGN60N60ABB07+;
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN60N60C2IXYS60A/600V/IGBT/1U
auf Bestellung 58 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN60N60C2IXYSDescription: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Produkt ist nicht verfügbar
IXGN60N60C2IXYSIGBT Transistors 60 Amps 600V 1.7 V Rds
Produkt ist nicht verfügbar
IXGN60N60C2D1IXYS60A/600V/IGBT/1U
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN60N60C2D1
Produktcode: 36189		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGN60N60C2D1IXYSSOP8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN60N60C2D1IXYSDescription: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Produkt ist nicht verfügbar
IXGN60N60C2D1IXYSIGBT Transistors 60 Amps 600V 1.7 V Rds
Produkt ist nicht verfügbar
IXGN72N60A3LittelfuseTrans IGBT Module N-CH 600V 160A 360000mW
Produkt ist nicht verfügbar
IXGN72N60A3IXYSDescription: IGBT MOD 600V 160A 360W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Produkt ist nicht verfügbar
IXGN72N60A3IXYSIGBT Transistors 72 Amps 600V
Produkt ist nicht verfügbar
IXGN72N60C3H1IXYSDescription: IGBT MOD 600V 78A 360W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.78 nF @ 25 V
Produkt ist nicht verfügbar
IXGN72N60C3H1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
auf Bestellung 300 Stücke:
Lieferzeit 301-315 Tag (e)
1+85.25 EUR
10+ 75.76 EUR
100+ 64.95 EUR
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
Produkt ist nicht verfügbar
IXGN72N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
Produkt ist nicht verfügbar
IXGN72N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
Produkt ist nicht verfügbar
IXGN80N60A2IXYSDescription: IGBT MOD 600V 160A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Produkt ist nicht verfügbar
IXGN80N60A2D1IXYSDescription: IGBT MOD 600V 160A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 650 µA
Produkt ist nicht verfügbar
IXGN82N120B3H1LittelfuseTrans IGBT Module N-CH 1200V
Produkt ist nicht verfügbar
IXGN82N120B3H1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
Produkt ist nicht verfügbar
IXGN82N120B3H1LittelfuseTrans IGBT Module N-CH 1200V
Produkt ist nicht verfügbar
IXGN82N120B3H1IXYSDescription: IGBT MOD 1200V 145A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
Produkt ist nicht verfügbar
IXGN82N120C3H1IXYSIGBT Transistors 130Amps 1200V
Produkt ist nicht verfügbar
IXGN82N120C3H1LittelfuseTrans IGBT Module N-CH
Produkt ist nicht verfügbar
IXGN82N120C3H1IXYSDescription: IGBT MOD 1200V 130A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
Produkt ist nicht verfügbar
IXGN82N120C3H1LittelfuseTrans IGBT Module N-CH
Produkt ist nicht verfügbar
IXGN82N120C3H1
Produktcode: 179639		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGP10N60AIXYSDescription: IGBT 600V 20A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 10A
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N100IXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N100IXYSIGBT Transistors 24Amps 1000V
Produkt ist nicht verfügbar
IXGP12N100AIXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N100AIXYSIGBT Transistors 24Amps 1000V
Produkt ist nicht verfügbar
IXGP12N100AU1IXYSIGBT Transistors 24Amps 1000V
Produkt ist nicht verfügbar
IXGP12N100AU1IXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 4mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N120A2IXYSDescription: IGBT 1200V 24A 75W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/680ns
Switching Energy: 5.4mJ (off)
Test Condition: 960V, 12A, 100Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
Produkt ist nicht verfügbar
IXGP12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Produkt ist nicht verfügbar
IXGP12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGP12N120A3IXYSIGBT Modules GenX3 1200V IGBTs
auf Bestellung 80 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.19 EUR
10+ 9.15 EUR
100+ 6.86 EUR
250+ 6.68 EUR
500+ 6.21 EUR
1000+ 5.25 EUR
2500+ 4.99 EUR
Mindestbestellmenge: 6
IXGP12N120A3IXYSDescription: IGBT 1200V 22A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Gate Charge: 20.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXGP12N60BIXYSDescription: IGBT 600V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N60CIXYSDescription: IGBT 600V 24A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP12N60CD1IXYSDescription: IGBT 600V 24A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
IXGP15N100CIXYSIGBT Transistors 30 Amps 1000V 3.5 Rds
Produkt ist nicht verfügbar
IXGP15N100CIXYSDescription: IGBT 1000V 30A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 850µJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP15N120BIXYSDescription: IGBT 1200V 30A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP15N120CIXYSDescription: IGBT 1200V 30A 200W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
Produkt ist nicht verfügbar
IXGP16N60B2IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP16N60B2D1
Produktcode: 122366		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXGP16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP16N60C2IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP16N60C2IXYSIGBT Transistors 16 Amps 600V 3.0 V Rds
Produkt ist nicht verfügbar
IXGP16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3.0 V Rds
Produkt ist nicht verfügbar
IXGP16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP20N100IXYSIGBT Transistors 40 Amps 1000V 3 Rds
Produkt ist nicht verfügbar
IXGP20N100IXYSDescription: IGBT 1000V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP20N120IXYSDescription: IGBT 1200V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP20N120Ixys CorporationTrans IGBT Chip N-CH 1200V 40A 150W 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXGP20N120LittelfuseTrans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXGP20N120IXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
Produkt ist nicht verfügbar
IXGP20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.79 EUR
12+ 6.11 EUR
15+ 4.86 EUR
16+ 4.6 EUR
Mindestbestellmenge: 11
IXGP20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXGP20N120A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
Produkt ist nicht verfügbar
IXGP20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.79 EUR
12+ 6.11 EUR
15+ 4.86 EUR
16+ 4.6 EUR
Mindestbestellmenge: 11
IXGP20N120A3IXYSDescription: IGBT 1200V 40A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
auf Bestellung 36 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.83 EUR
Mindestbestellmenge: 2
IXGP20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180W 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXGP20N120BIXYSDescription: IGBT 1200V 40A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGP20N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.79 EUR
12+ 6.11 EUR
15+ 4.86 EUR
16+ 4.6 EUR
Mindestbestellmenge: 11
IXGP20N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.79 EUR
12+ 6.11 EUR
15+ 4.86 EUR
16+ 4.6 EUR
Mindestbestellmenge: 11
IXGP20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
IXGP20N120B3IXYSDescription: IGBT 1200V 36A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
auf Bestellung 38 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.83 EUR
Mindestbestellmenge: 2
IXGP20N120B3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
Produkt ist nicht verfügbar
IXGP20N120BD1IXYSDescription: IGBT 1200V 40A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGP20N60BIXYSDescription: IGBT 600V 40A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO220-3
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXGP24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
IXGP24N120C3IXYSIGBT Transistors 24 Amps 1200V
Produkt ist nicht verfügbar
IXGP24N120C3IXYSDescription: IGBT 1200V 48A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGP24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO220-3
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Produkt ist nicht verfügbar
IXGP24N60CIXYSDescription: IGBT 600V 48A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IXGP24N60C4IXYSDescription: IGBT 600V 56A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGP24N60C4D1IXYSDescription: IGBT 600V 56A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/192ns
Switching Energy: 350µJ (on), 340µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGP28N120BIXYSDescription: IGBT 1200V 50A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 2mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
IXGP28N60A3IXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
Produkt ist nicht verfügbar
IXGP28N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
Produkt ist nicht verfügbar
IXGP28N60A3MIXYSDescription: DISC IGBT PT-LOW FREQUENCY TO-22
Produkt ist nicht verfügbar
IXGP28N60A3MIXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
Produkt ist nicht verfügbar
IXGP2N100IXYSIGBT Transistors 4 Amps 1000V 2.7 Rds
Produkt ist nicht verfügbar
IXGP2N100IXYSDescription: IGBT 1000V 4A 25W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/300ns
Switching Energy: 560µJ (off)
Test Condition: 800V, 2A, 150Ohm, 15V
Gate Charge: 7.8 nC
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 25 W
Produkt ist nicht verfügbar
IXGP2N100AIXYSDescription: IGBT 1000V 4A 25W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/300ns
Switching Energy: 260µJ (off)
Test Condition: 800V, 2A, 150Ohm, 15V
Gate Charge: 7.8 nC
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 25 W
Produkt ist nicht verfügbar