Technische Details IXGP24N120C3 Littelfuse
Description: IGBT 1200V 48A 250W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/93ns, Switching Energy: 1.16mJ (on), 470µJ (off), Test Condition: 600V, 20A, 5Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 250 W.
Weitere Produktangebote IXGP24N120C3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXGP24N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3 Case: TO220-3 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGP24N120C3 | Hersteller : IXYS |
Description: IGBT 1200V 48A 250W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.16mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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IXGP24N120C3 | Hersteller : IXYS | IGBT Transistors 24 Amps 1200V |
Produkt ist nicht verfügbar |
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IXGP24N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3 Case: TO220-3 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
Produkt ist nicht verfügbar |