IXGA20N120B3-TRL IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 36A TO-263
Power - Max: 180 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Part Status: Active
Gate Charge: 51 nC
Test Condition: 600V, 16A, 15Ohm, 15V
Switching Energy: 920µJ (on), 560µJ (off)
Td (on/off) @ 25°C: 16ns/150ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Reverse Recovery Time (trr): 31 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
IGBT Type: PT
Supplier Device Package: TO-263 (D2Pak)
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Technische Details IXGA20N120B3-TRL IXYS
Description: IGBT PT 1200V 36A TO-263, Power - Max: 180 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 36 A, Part Status: Active, Gate Charge: 51 nC, Test Condition: 600V, 16A, 15Ohm, 15V, Switching Energy: 920µJ (on), 560µJ (off), Td (on/off) @ 25°C: 16ns/150ns, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A, Reverse Recovery Time (trr): 31 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), IGBT Type: PT, Supplier Device Package: TO-263 (D2Pak).
Weitere Produktangebote IXGA20N120B3-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXGA20N120B3-TRL | IXYS |
IGBTs IXGA20N120B3 TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGA20N120B3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 36A Power dissipation: 180W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Turn-off time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXGA20N120B3-TRL |
|
Hersteller: IXYS
IGBTs IXGA20N120B3 TRL
IGBTs IXGA20N120B3 TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGA20N120B3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Power dissipation: 180W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Turn-off time: 150ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Power dissipation: 180W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Turn-off time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH