Technische Details IXGK72N60B3H1 Littelfuse
Description: IGBT PT 600V 75A TO-264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 31ns/152ns, Switching Energy: 1.4mJ (on), 1mJ (off), Test Condition: 480V, 50A, 3Ohm, 15V, Gate Charge: 225 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 450 A, Power - Max: 540 W.
Weitere Produktangebote IXGK72N60B3H1
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IXGK72N60B3H1 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns Anzahl je Verpackung: 1 Stücke |
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IXGK72N60B3H1 | Hersteller : IXYS |
Description: IGBT PT 600V 75A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 31ns/152ns Switching Energy: 1.4mJ (on), 1mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 225 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 450 A Power - Max: 540 W |
Produkt ist nicht verfügbar |
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IXGK72N60B3H1 | Hersteller : IXYS |
IGBTs Mid-Frequency Range 15khz-40khz w/ Diode |
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IXGK72N60B3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns |
Produkt ist nicht verfügbar |