IXGK120N120A3 IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
Description: IGBT PT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 85.64 EUR |
| 25+ | 61.84 EUR |
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Technische Details IXGK120N120A3 IXYS
Description: IGBT PT 1200V 240A TO-264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 40ns/490ns, Switching Energy: 10mJ (on), 33mJ (off), Test Condition: 960V, 100A, 1Ohm, 15V, Gate Charge: 420 nC, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 830 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 420nC Kind of package: tube Collector current: 120A Pulsed collector current: 600A Turn-on time: 105ns Turn-off time: 1365ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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IXGK120N120A3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 420nC Kind of package: tube Collector current: 120A Pulsed collector current: 600A Turn-on time: 105ns Turn-off time: 1365ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V |
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