IXGR24N120C3D1
Hersteller:
Trans IGBT Chip N-CH 1200V 48A 200000mW ISOPLUS 247 Транзистори
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Technische Details IXGR24N120C3D1
Description: IGBT PT 1200V 48A ISOPLUS247, Switching Energy: 1.37mJ (on), 470µJ (off), Td (on/off) @ 25°C: 16ns/93ns, IGBT Type: PT, Supplier Device Package: ISOPLUS247™, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A, Reverse Recovery Time (trr): 220 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 200 W, Current - Collector Pulsed (Icm): 96 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 48 A, Part Status: Active, Gate Charge: 79 nC, Test Condition: 600V, 20A, 5Ohm, 15V.
Weitere Produktangebote IXGR24N120C3D1
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IXGR24N120C3D1 | Hersteller : IXYS |
Description: IGBT PT 1200V 48A ISOPLUS247 Switching Energy: 1.37mJ (on), 470µJ (off) Td (on/off) @ 25°C: 16ns/93ns IGBT Type: PT Supplier Device Package: ISOPLUS247™ Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Reverse Recovery Time (trr): 220 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 200 W Current - Collector Pulsed (Icm): 96 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 48 A Part Status: Active Gate Charge: 79 nC Test Condition: 600V, 20A, 5Ohm, 15V |
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IXGR24N120C3D1 | Hersteller : IXYS |
 IGBTs 48 Amps 1200V 2.75 Rds |
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IXGR24N120C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 54ns Turn-off time: 430ns |
Produkt ist nicht verfügbar |