IXGH50N90B2 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Technology: HiPerFAST™; XPT™
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 48ns
Gate charge: 135nC
Turn-off time: 820ns
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 900V
Pulsed collector current: 200A
Power dissipation: 400W
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.15 EUR |
| 10+ | 7.19 EUR |
| 11+ | 6.79 EUR |
| 30+ | 6.55 EUR |
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Technische Details IXGH50N90B2 IXYS
Description: IGBT 900V 75A 400W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/350ns, Switching Energy: 4.7mJ (off), Test Condition: 720V, 50A, 5Ohm, 15V, Gate Charge: 135 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 400 W.
Weitere Produktangebote IXGH50N90B2 nach Preis ab 6.55 EUR bis 21.33 EUR
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IXGH50N90B2 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3 Mounting: THT Technology: HiPerFAST™; XPT™ Type of transistor: IGBT Kind of package: tube Turn-on time: 48ns Gate charge: 135nC Turn-off time: 820ns Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 900V Pulsed collector current: 200A Power dissipation: 400W Case: TO247-3 |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH50N90B2 | Hersteller : IXYS |
Description: IGBT 900V 75A 400W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/350ns Switching Energy: 4.7mJ (off) Test Condition: 720V, 50A, 5Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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Trans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD |
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