IXGH2N250 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 20.31 EUR |
5+ | 14.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXGH2N250 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3, Type of transistor: IGBT, Technology: NPT, Collector-emitter voltage: 2.5kV, Collector current: 2A, Power dissipation: 32W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 13.5A, Mounting: THT, Gate charge: 10.5nC, Kind of package: tube, Turn-on time: 115ns, Turn-off time: 278ns, Features of semiconductor devices: high voltage, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGH2N250 nach Preis ab 14.5 EUR bis 26.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXGH2N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IXGH2N250 | Hersteller : IXYS | IGBT Transistors IGBT NPT-VERY HI VOLTAGE |
auf Bestellung 406 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IXGH2N250 | Hersteller : IXYS |
Description: IGBT 2500V 5.5A 32W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A Supplier Device Package: TO-247AD Gate Charge: 10.5 nC Part Status: Active Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13.5 A Power - Max: 32 W |
Produkt ist nicht verfügbar |