auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.41 EUR |
| 10+ | 23.57 EUR |
| 30+ | 17.97 EUR |
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Technische Details IXGH2N250 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3, Mounting: THT, Case: TO247-3, Collector-emitter voltage: 2.5kV, Gate-emitter voltage: ±20V, Collector current: 2A, Pulsed collector current: 13.5A, Turn-on time: 115ns, Turn-off time: 278ns, Type of transistor: IGBT, Power dissipation: 32W, Kind of package: tube, Features of semiconductor devices: high voltage, Gate charge: 10.5nC, Technology: NPT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGH2N250 nach Preis ab 20.12 EUR bis 26.42 EUR
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IXGH2N250 | Hersteller : IXYS |
 Description: IGBT 2500V 5.5A 32W TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A Supplier Device Package: TO-247AD Gate Charge: 10.5 nC Part Status: Active Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13.5 A Power - Max: 32 W |
auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH2N250 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXGH2N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13.5A Turn-on time: 115ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 32W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 10.5nC Technology: NPT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH2N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13.5A Turn-on time: 115ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 32W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 10.5nC Technology: NPT |
Produkt ist nicht verfügbar |