IXGH2N250 IXYS
Hersteller: IXYSDescription: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.42 EUR |
| 30+ | 21.38 EUR |
| 120+ | 20.12 EUR |
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Technische Details IXGH2N250 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3, Type of transistor: IGBT, Technology: NPT, Collector-emitter voltage: 2.5kV, Collector current: 2A, Power dissipation: 32W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 13.5A, Mounting: THT, Gate charge: 10.5nC, Kind of package: tube, Turn-on time: 115ns, Turn-off time: 278ns, Features of semiconductor devices: high voltage, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGH2N250 nach Preis ab 24.89 EUR bis 36.2 EUR
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Trans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247 |
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IXGH2N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH2N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |