auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.25 EUR |
| 10+ | 7.73 EUR |
| 100+ | 6.93 EUR |
| 500+ | 6.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXGA20N120A3 IXYS
Description: IGBT PT 1200V 40A TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-263AA, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/290ns, Switching Energy: 2.85mJ (on), 6.47mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 50 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 180 W.
Weitere Produktangebote IXGA20N120A3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXGA20N120A3 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
IXGA20N120A3 Produktcode: 56134
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller : IXYS |
Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-263 Vces: 1200 Vce: 2,5 Ic 25: 40 Ic 100: 20 Pd 25: 180 td(on)/td(off) 100-150 Grad: 16/290 |
Produkt ist nicht verfügbar
|
|
 |
IXGA20N120A3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 50nC Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 1.2kV Turn-on time: 66ns Turn-off time: 1.53µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXGA20N120A3 | Hersteller : IXYS |
Description: IGBT PT 1200V 40A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/290ns Switching Energy: 2.85mJ (on), 6.47mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
|
|
|
IXGA20N120A3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 50nC Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 1.2kV Turn-on time: 66ns Turn-off time: 1.53µs |
Produkt ist nicht verfügbar |