IXGA20N120A3 IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 377 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 7.14 EUR |
| 12+ | 6.42 EUR |
| 15+ | 4.83 EUR |
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Technische Details IXGA20N120A3 IXYS
Description: IGBT PT 1200V 40A TO263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-263AA, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/290ns, Switching Energy: 2.85mJ (on), 6.47mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 50 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 180 W.
Weitere Produktangebote IXGA20N120A3 nach Preis ab 4.83 EUR bis 14.92 EUR
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IXGA20N120A3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGA20N120A3 | Hersteller : IXYS |
IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A |
auf Bestellung 40 Stücke: Lieferzeit 14-28 Tag (e) |
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IXGA20N120A3 Produktcode: 56134 |
Hersteller : IXYS |
Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-263 Vces: 1200 Vce: 2,5 Ic 25: 40 Ic 100: 20 Pd 25: 180 td(on)/td(off) 100-150 Grad: 16/290 |
Produkt ist nicht verfügbar
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IXGA20N120A3 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXGA20N120A3 | Hersteller : IXYS |
Description: IGBT PT 1200V 40A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/290ns Switching Energy: 2.85mJ (on), 6.47mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
Produkt ist nicht verfügbar |