IXGJ40N60C2D1 IXYS
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-268
Power - Max: 300 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 95 nC
Test Condition: 400V, 30A, 3Ohm, 15V
Switching Energy: 200µJ (off)
Td (on/off) @ 25°C: 18ns/90ns
IGBT Type: PT
Supplier Device Package: TO-268
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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Technische Details IXGJ40N60C2D1 IXYS
Description: IGBT PT 600V 75A TO-268, Power - Max: 300 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 75 A, Part Status: Obsolete, Gate Charge: 95 nC, Test Condition: 400V, 30A, 3Ohm, 15V, Switching Energy: 200µJ (off), Td (on/off) @ 25°C: 18ns/90ns, IGBT Type: PT, Supplier Device Package: TO-268, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Reverse Recovery Time (trr): 25 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Short Tab, Packaging: Tube.
Weitere Produktangebote IXGJ40N60C2D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXGJ40N60C2D1 | Hersteller : IXYS |
IGBT Transistors 40 Amps 600V 2.7 V Rds |
Produkt ist nicht verfügbar |

