IXGH24N120C3H1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Case: TO247-3
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT; Sonic FRD™
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGH24N120C3H1 IXYS
Description: IGBT 1200V 48A 250W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/93ns, Switching Energy: 1.16mJ (on), 470µJ (off), Test Condition: 600V, 20A, 5Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 250 W.
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IXGH24N120C3H1 | Hersteller : IXYS |
Description: IGBT 1200V 48A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.16mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
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IXGH24N120C3H1 | Hersteller : IXYS |
IGBT Transistors High Frequency Range 40khz C-IGBT w/Diode |
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IXGH24N120C3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Case: TO247-3 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT; Sonic FRD™ Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
Produkt ist nicht verfügbar |