IXGH24N120C3H1 IXYS
Hersteller: IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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Technische Details IXGH24N120C3H1 IXYS
Description: IGBT 1200V 48A 250W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/93ns, Switching Energy: 1.16mJ (on), 470µJ (off), Test Condition: 600V, 20A, 5Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 250 W.
Weitere Produktangebote IXGH24N120C3H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGH24N120C3H1 | Hersteller : IXYS |
IGBTs High Frequency Range 40khz C-IGBT w/Diode |
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IXGH24N120C3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT; Sonic FRD™ Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns |
Produkt ist nicht verfügbar |