IXGK120N120B3 IXYS
Hersteller: IXYSDescription: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 42.74 EUR |
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Technische Details IXGK120N120B3 IXYS
Description: IGBT 1200V 200A 830W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 36ns/275ns, Switching Energy: 5.5mJ (on), 5.8mJ (off), Test Condition: 600V, 100A, 2Ohm, 15V, Gate Charge: 470 nC, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 370 A, Power - Max: 830 W.
Weitere Produktangebote IXGK120N120B3 nach Preis ab 74.34 EUR bis 88.00 EUR
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IXGK120N120B3 | Hersteller : IXYS |
IGBTs 200Amps 1200V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGK120N120B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 120A Pulsed collector current: 370A Turn-on time: 122ns Turn-off time: 885ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGK120N120B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 120A Pulsed collector current: 370A Turn-on time: 122ns Turn-off time: 885ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |