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Technische Details IXGH40N120B2D1 IXYS
Description: IGBT PT 1200V 75A TO-247AD, Power - Max: 380 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Active, Gate Charge: 138 nC, Test Condition: 960V, 40A, 2Ohm, 15V, Switching Energy: 4.5mJ (on), 3mJ (off), Td (on/off) @ 25°C: 21ns/290ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A, Reverse Recovery Time (trr): 100 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXGH40N120B2D1
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IXGH40N120B2D1 | Hersteller : IXYS |
 Description: IGBT PT 1200V 75A TO-247ADPower - Max: 380 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Active Gate Charge: 138 nC Test Condition: 960V, 40A, 2Ohm, 15V Switching Energy: 4.5mJ (on), 3mJ (off) Td (on/off) @ 25°C: 21ns/290ns IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A Reverse Recovery Time (trr): 100 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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IXGH40N120B2D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO247-3 Mounting: THT Gate charge: 138nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 79ns Turn-off time: 770ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |