.jpg "IXGH90N60B3")
Produktrezensionen
Produktbewertung abgeben
Technische Details IXGH90N60B3 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247, Type of transistor: IGBT, Technology: GenX3™, Collector-emitter voltage: 600V, Collector current: 75A, Power dissipation: 660W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 180A, Mounting: THT, Gate charge: 172nC, Kind of package: tube, Turn-on time: 29ns, Turn-off time: 0.22µs.
Weitere Produktangebote IXGH90N60B3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXGH90N60B3 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247 Type of transistor: IGBT Technology: GenX3™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 660W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 172nC Kind of package: tube Turn-on time: 29ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGH90N60B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH