IXGH120N30B3 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 540W
Kind of package: tube
Gate charge: 225nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 51ns
Turn-off time: 356ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGH120N30B3 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3, Case: TO247-3, Mounting: THT, Type of transistor: IGBT, Power dissipation: 540W, Kind of package: tube, Gate charge: 225nC, Technology: GenX3™; PT, Collector-emitter voltage: 300V, Gate-emitter voltage: ±20V, Collector current: 120A, Pulsed collector current: 480A, Turn-on time: 51ns, Turn-off time: 356ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGH120N30B3
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IXGH120N30B3 | Hersteller : IXYS |
Description: IGBT 300V 75A 540W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 225 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 480 A Power - Max: 540 W |
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IXGH120N30B3 | Hersteller : IXYS |
IGBTs 120 Amps 300V |
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IXGH120N30B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Case: TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 540W Kind of package: tube Gate charge: 225nC Technology: GenX3™; PT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 51ns Turn-off time: 356ns |
Produkt ist nicht verfügbar |