IXGH40N120C3 IXYS
Hersteller: IXYS
Description: IGBT 1200V 75A 380W TO247
Power - Max: 380 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 142 nC
Test Condition: 600V, 30A, 3Ohm, 15V
Switching Energy: 1.8mJ (on), 550µJ (off)
Td (on/off) @ 25°C: 17ns/130ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXGH40N120C3 IXYS
Description: IGBT 1200V 75A 380W TO247, Power - Max: 380 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Active, Gate Charge: 142 nC, Test Condition: 600V, 30A, 3Ohm, 15V, Switching Energy: 1.8mJ (on), 550µJ (off), Td (on/off) @ 25°C: 17ns/130ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXGH40N120C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGH40N120C3 | Hersteller : IXYS |
IGBTs 75Amps 1200V |
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IXGH40N120C3 | Hersteller : IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO247-3 Mounting: THT Gate charge: 142nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 52ns Turn-off time: 475ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |


