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IXGP20N120B

IXGP20N120B IXYS



Hersteller: IXYS
Description: IGBT 1200V 40A TO-220-3
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 190 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 72 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 2.1mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Technische Details IXGP20N120B IXYS

Description: IGBT 1200V 40A TO-220-3, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 190 W, Current - Collector Pulsed (Icm): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 72 nC, Test Condition: 960V, 20A, 10Ohm, 15V, Switching Energy: 2.1mJ (off), Td (on/off) @ 25°C: 25ns/150ns, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.

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IXGP20N120B Hersteller : IXYS ixys_99138.pdf IGBTs 40 Amps 1200V 2.5 Rds
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IXGP20N120B Hersteller : IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 150ns
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Gate charge: 72nC
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