IXGP20N120B3 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
Turn-off time: 720ns
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Technische Details IXGP20N120B3 IXYS
Description: IGBT PT 1200V 36A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/150ns, Switching Energy: 920µJ (on), 560µJ (off), Test Condition: 600V, 16A, 15Ohm, 15V, Gate Charge: 51 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 180 W.
Weitere Produktangebote IXGP20N120B3 nach Preis ab 6.01 EUR bis 12.8 EUR
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IXGP20N120B3 | Hersteller : IXYS |
Description: IGBT PT 1200V 36A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/150ns Switching Energy: 920µJ (on), 560µJ (off) Test Condition: 600V, 16A, 15Ohm, 15V Gate Charge: 51 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 180 W |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGP20N120B3 | Hersteller : Ixys Corporation |
Trans IGBT Chip N-CH 1200V 36A 180W 3-Pin(3+Tab) TO-220 |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGP20N120B3 | Hersteller : IXYS |
IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A |
Produkt ist nicht verfügbar |