IXGP20N120B3 Ixys Corporation
| Anzahl | Privatkunde |
|---|---|
| 12+ | 15.95 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
12 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXGP20N120B3 Ixys Corporation
Description: IGBT PT 1200V 36A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/150ns, Switching Energy: 920µJ (on), 560µJ (off), Test Condition: 600V, 16A, 15Ohm, 15V, Gate Charge: 51 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 180 W.
Weitere Produktangebote IXGP20N120B3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGP20N120B3 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXGP20N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)