IXGA20N120B3 IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 36A TO-263AA
Power - Max: 180 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Part Status: Active
Gate Charge: 51 nC
Test Condition: 600V, 16A, 15Ohm, 15V
Switching Energy: 920µJ (on), 560µJ (off)
Td (on/off) @ 25°C: 16ns/150ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details IXGA20N120B3 IXYS
Description: IGBT PT 1200V 36A TO-263AA, Power - Max: 180 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 36 A, Part Status: Active, Gate Charge: 51 nC, Test Condition: 600V, 16A, 15Ohm, 15V, Switching Energy: 920µJ (on), 560µJ (off), Td (on/off) @ 25°C: 16ns/150ns, IGBT Type: PT, Supplier Device Package: TO-263AA, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXGA20N120B3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGA20N120B3 | IXYS |
IGBTs GenX3 1200V IGBTs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGA20N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGA20N120B3 |
|
Hersteller: IXYS
IGBTs GenX3 1200V IGBTs
IGBTs GenX3 1200V IGBTs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGA20N120B3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH