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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.54 EUR |
| 10+ | 11.67 EUR |
| 120+ | 11.65 EUR |
| 510+ | 11.42 EUR |
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Technische Details IXGH6N170 IXYS
Description: IGBT NPT 1700V 12A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 40ns/250ns, Switching Energy: 1.5mJ (off), Test Condition: 1360V, 6A, 33Ohm, 15V, Gate Charge: 20 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 75 W.
Weitere Produktangebote IXGH6N170
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGH6N170 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 1700V 12A 75W 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : IXYS |
Description: IGBT NPT 1700V 12A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 40ns/250ns Switching Energy: 1.5mJ (off) Test Condition: 1360V, 6A, 33Ohm, 15V Gate Charge: 20 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 24 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 20nC Turn-on time: 85ns Turn-off time: 0.6µs Power dissipation: 75W Collector current: 6A Pulsed collector current: 24A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |



