Technische Details IXGH6N170 Littelfuse
Description: IGBT NPT 1700V 12A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 40ns/250ns, Switching Energy: 1.5mJ (off), Test Condition: 1360V, 6A, 33Ohm, 15V, Gate Charge: 20 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 75 W.
Weitere Produktangebote IXGH6N170
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IXGH6N170 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 6A Power dissipation: 75W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 20nC Kind of package: tube Turn-on time: 85ns Turn-off time: 0.6µs Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : IXYS |
Description: IGBT NPT 1700V 12A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 40ns/250ns Switching Energy: 1.5mJ (off) Test Condition: 1360V, 6A, 33Ohm, 15V Gate Charge: 20 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 24 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : IXYS |
IGBTs 12 Amps 1700 V 4 V Rds |
Produkt ist nicht verfügbar |
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IXGH6N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 6A Power dissipation: 75W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 20nC Kind of package: tube Turn-on time: 85ns Turn-off time: 0.6µs Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |