Technische Details IXGH10N170A Littelfuse
Description: IGBT NPT 1700V 10A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 46ns/190ns, Switching Energy: 380µJ (off), Test Condition: 850V, 10A, 22Ohm, 15V, Gate Charge: 29 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 140 W.
Weitere Produktangebote IXGH10N170A
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IXGH10N170A | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1700V 10A 110W 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXGH10N170A | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Technology: NPT Mounting: THT Kind of package: tube Gate charge: 29nC Turn-on time: 107ns Turn-off time: 240ns Collector current: 5A Pulsed collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 140W Collector-emitter voltage: 1.7kV Case: TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH10N170A | Hersteller : IXYS |
Description: IGBT NPT 1700V 10A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/190ns Switching Energy: 380µJ (off) Test Condition: 850V, 10A, 22Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 20 A Power - Max: 140 W |
Produkt ist nicht verfügbar |
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IXGH10N170A | Hersteller : IXYS |
IGBTs 20 Amps 1700 V 7 V Rds |
Produkt ist nicht verfügbar |
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IXGH10N170A | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Technology: NPT Mounting: THT Kind of package: tube Gate charge: 29nC Turn-on time: 107ns Turn-off time: 240ns Collector current: 5A Pulsed collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 140W Collector-emitter voltage: 1.7kV Case: TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |