| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.78 EUR |
| 10+ | 12.38 EUR |
| 120+ | 10.77 EUR |
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Technische Details IXGH10N170A IXYS
Description: IGBT NPT 1700V 10A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 46ns/190ns, Switching Energy: 380µJ (off), Test Condition: 850V, 10A, 22Ohm, 15V, Gate Charge: 29 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 140 W.
Weitere Produktangebote IXGH10N170A nach Preis ab 10.75 EUR bis 21.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXGH10N170A | Ixys Corporation |
Trans IGBT Chip N-CH 1700V 10A 110W 3-Pin(3+Tab) TO-247AD |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH10N170A | IXYS |
Description: IGBT NPT 1700V 10A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/190ns Switching Energy: 380µJ (off) Test Condition: 850V, 10A, 22Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 20 A Power - Max: 140 W |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH10N170A | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 5A Power dissipation: 140W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 29nC Kind of package: tube Turn-on time: 107ns Turn-off time: 240ns Features of semiconductor devices: high voltage |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXGH10N170A |
![]() |
Hersteller: Ixys Corporation
Trans IGBT Chip N-CH 1700V 10A 110W 3-Pin(3+Tab) TO-247AD
Trans IGBT Chip N-CH 1700V 10A 110W 3-Pin(3+Tab) TO-247AD
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 21.17 EUR |
| 11+ | 16.93 EUR |
| IXGH10N170A |
![]() |
Hersteller: IXYS
Description: IGBT NPT 1700V 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
Description: IGBT NPT 1700V 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.19 EUR |
| 30+ | 12.63 EUR |
| 120+ | 10.75 EUR |
| IXGH10N170A |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)





