Technische Details IXGH25N250 Littelfuse
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3, Mounting: THT, Case: TO247-3, Collector-emitter voltage: 2.5kV, Gate-emitter voltage: ±20V, Collector current: 25A, Pulsed collector current: 200A, Turn-on time: 301ns, Turn-off time: 409ns, Type of transistor: IGBT, Power dissipation: 250W, Kind of package: tube, Features of semiconductor devices: high voltage, Gate charge: 75nC, Technology: NPT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGH25N250
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IXGH25N250 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 2500V 60A 250000mW 3-Pin(3+Tab) TO-247 |
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IXGH25N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 200A Turn-on time: 301ns Turn-off time: 409ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 75nC Technology: NPT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH25N250 | Hersteller : IXYS |
Description: IGBT 2500V 60A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 75 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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IXGH25N250 | Hersteller : IXYS |
IGBTs TO247 2500V 60A IGBT |
Produkt ist nicht verfügbar |
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IXGH25N250 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 200A Turn-on time: 301ns Turn-off time: 409ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 75nC Technology: NPT |
Produkt ist nicht verfügbar |