IXGH120N30C3 IXYS
Hersteller: IXYSDescription: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/109ns
Switching Energy: 230µJ (on), 730µJ (off)
Test Condition: 200V, 60A, 2Ohm, 15V
Gate Charge: 230 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 540 W
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Technische Details IXGH120N30C3 IXYS
Description: IGBT 300V 75A 540W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 28ns/109ns, Switching Energy: 230µJ (on), 730µJ (off), Test Condition: 200V, 60A, 2Ohm, 15V, Gate Charge: 230 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 540 W.
Weitere Produktangebote IXGH120N30C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXGH120N30C3 | Hersteller : IXYS |
IGBTs 120 Amps 300V |
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IXGH120N30C3 | Hersteller : IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 300V Collector current: 120A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 66ns Turn-off time: 233ns |
Produkt ist nicht verfügbar |

