Produkte > IXYS > IXTA24N65X2
IXTA24N65X2

IXTA24N65X2 IXYS

littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
Hersteller: IXYS
Description: MOSFET N-CH 650V 24A TO263AA
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.58 EUR
50+6.16 EUR
100+5.64 EUR
500+5.05 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTA24N65X2 IXYS

Description: MOSFET N-CH 650V 24A TO263AA, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 390W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.

Weitere Produktangebote IXTA24N65X2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTA24N65X2 IXTA24N65X2 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXT_24N65X2_Datasheet__2_.PDF MOSFETs TO263 650V 24A N-CH X2CLASS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA24N65X2 IXTA24N65X2 IXYS IXT_24N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 390W
Gate charge: 36nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA24N65X2 Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXT_24N65X2_Datasheet__2_.PDF
IXTA24N65X2
Hersteller: IXYS
MOSFETs TO263 650V 24A N-CH X2CLASS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA24N65X2 IXT_24N65X2.pdf
IXTA24N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 390W
Gate charge: 36nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH