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IXTA1R6N100D2 IXTA1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS IXTA1R6N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 970ns
Gate charge: 27nC
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CPC1117NTR CPC1117NTR IXYS CPC1117N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1125N CPC1125N IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1125NTR CPC1125NTR IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: buck chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: boost chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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IXFN80N50 IXFN80N50 IXYS IXFN80N50.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Reverse recovery time: 250ns
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CPC1014NTR CPC1014NTR IXYS CPC1014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.4A
On-state resistance: 2Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
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IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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25+2.89 EUR
31+2.35 EUR
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70+1.63 EUR
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IXTY1R6N50D2 IXTY1R6N50D2 IXYS IXTA(P,Y)1R6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Power dissipation: 100W
Case: TO252
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Gate-source voltage: ±20V
Reverse recovery time: 400ns
On-state resistance: 2.3Ω
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MCC312-12io1 MCC312-12io1 IXYS MCC312-12IO1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXDN604SIA IXDN604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
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IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
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IXTP4N70X2M IXTP4N70X2M IXYS IXTP4N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
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IXTY18P10T IXTY18P10T IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate-source voltage: ±15V
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
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IXTY15P15T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 15A; 150W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 150V
Drain current: 15A
Gate-source voltage: -15...15V
On-state resistance: 0.24Ω
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IXTY18P10T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 18A; 83W; DPAK,TO252AA
Type of transistor: P-MOSFET
Power dissipation: 83W
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 18A
Gate-source voltage: 15V
On-state resistance: 0.12Ω
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IXTY10P15T IXTY10P15T IXYS IXT_10P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate-source voltage: ±15V
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
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IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 150W
Case: TO252
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate-source voltage: ±15V
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
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IXTY1N80P IXTY1N80P IXYS IXTA(P,U,Y)1N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO252
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Reverse recovery time: 700ns
On-state resistance: 14Ω
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IXTY1N100P IXTY1N100P IXYS IXTA(P,Y)1N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Power dissipation: 50W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Reverse recovery time: 750ns
On-state resistance: 15Ω
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MMIX1Y100N120C3H1 IXYS MMIX1Y100N120C3H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
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CMA80PD1600NA CMA80PD1600NA IXYS CMA80PD1600NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Mechanical mounting: screw
Load current: 80A
Gate current: 100/200mA
Max. load current: 126A
Threshold on-voltage: 0.86V
Max. forward voltage: 1.29V
Max. forward impulse current: 1.07kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: SOT227B
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
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MCC72-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC72-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXDN604SI IXDN604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 878 Stücke:
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23+3.19 EUR
50+2.7 EUR
100+2.52 EUR
200+2.35 EUR
300+2.3 EUR
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IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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DSEI2X121-02A DSEI2X121-02A IXYS DSEI2x121-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Max. forward impulse current: 1.3kA
Kind of package: tube
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CPC1130NTR CPC1130NTR IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114N CPC1114N IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114NTR CPC1114NTR IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS45-16IO1 CS45-16IO1 IXYS CS45-08IO1-DTE.pdf CS45-16IO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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CS45-16IO1R CS45-16IO1R IXYS CS45-16io1R.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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CS45-12IO1 CS45-12IO1 IXYS CS45-08IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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CS45-08io1 CS45-08io1 IXYS CS45-08IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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IXFP30N25X3 IXFP30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
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IXFY30N25X3 IXFY30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
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FMM50-025TF FMM50-025TF IXYS DS100040A-(FMM50-025TF).pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Kind of channel: enhancement
Technology: HiPerFET™; Trench
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET x2
Gate charge: 78nC
Reverse recovery time: 84ns
On-state resistance: 60mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 125W
Pulsed drain current: 130A
Drain-source voltage: 250V
Polarisation: unipolar
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IXTP170N075T2 IXTP170N075T2 IXYS IXTA(P)170N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
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IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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DSEP15-06A DSEP15-06A IXYS DSEP15-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.35V
Load current: 15A
Max. forward impulse current: 110A
Case: TO220AC
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Kind of package: tube
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 35ns
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IXTP48P05T IXTP48P05T IXYS IXT_48P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTY48P05T IXTY48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTA48P05T IXTA48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
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IXTA48P05T-TRL IXYS littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
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IXTY48P05T-TRL IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS DSA120X200LB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Semiconductor structure: double independent
Case: SMPD
Mounting: SMD
Type of diode: Schottky rectifying
Power dissipation: 185W
Max. forward voltage: 0.67V
Max. off-state voltage: 200V
Load current: 65A x2
Max. forward impulse current: 700A
Kind of package: tube
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DSEI30-10AR DSEI30-10AR IXYS 93021.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 200A; ISOPLUS247™; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
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NCD2400MTR IXYS NCD2400M.pdf Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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IXFN360N15T2 IXFN360N15T2 IXYS IXFN360N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Power dissipation: 1.07kW
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXBF20N360 IXBF20N360 IXYS IXBF20N360.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Mounting: THT
Gate charge: 110nC
Power dissipation: 230W
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
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IXBX50N360HV IXBX50N360HV IXYS IXBX50N360HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Mounting: THT
Gate charge: 0.21µC
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
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CPC3720CTR CPC3720CTR IXYS CPC3720.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
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MCC95-16io1B MCC95-16io1B IXYS MCC95-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MDD95-16N1B MDD95-16N1B IXYS MDD95-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.6kV
Load current: 120A
Max. load current: 180A
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MDD95-12N1B MDD95-12N1B IXYS MDD95-12N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.2kV
Load current: 120A
Max. load current: 180A
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IXTA1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTA1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
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IXTA1R6N100D2HV IXTA1R6N100D2HV.pdf
IXTA1R6N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 970ns
Gate charge: 27nC
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CPC1117NTR CPC1117N.pdf
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1125N CPC1125N.pdf
CPC1125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1125NTR CPC1125N.pdf
CPC1125NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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MDI550-12A4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: buck chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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MID550-12A4
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: boost chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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IXFN80N50 description IXFN80N50.pdf
IXFN80N50
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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CPC1014NTR CPC1014N.pdf
CPC1014NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.4A
On-state resistance: 2Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Produkt ist nicht verfügbar
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IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
25+2.89 EUR
31+2.35 EUR
50+1.8 EUR
70+1.63 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IXTY1R6N50D2 IXTA(P,Y)1R6N50D2.pdf
IXTY1R6N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Power dissipation: 100W
Case: TO252
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Gate-source voltage: ±20V
Reverse recovery time: 400ns
On-state resistance: 2.3Ω
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
21+3.43 EUR
25+2.87 EUR
30+2.76 EUR
50+2.6 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
MCC312-12io1 MCC312-12IO1.pdf
MCC312-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+206.35 EUR
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IXDN604SIA IXDD604PI.pdf
IXDN604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.47 EUR
53+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
30+2.4 EUR
34+2.12 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.6 EUR
32+2.29 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXTP4N70X2M IXTP4N70X2M.pdf
IXTP4N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
Produkt ist nicht verfügbar
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IXTY18P10T IXT_18P10T.pdf
IXTY18P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate-source voltage: ±15V
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
26+2.85 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTY15P15T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 15A; 150W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 150V
Drain current: 15A
Gate-source voltage: -15...15V
On-state resistance: 0.24Ω
Produkt ist nicht verfügbar
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IXTY18P10T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 18A; 83W; DPAK,TO252AA
Type of transistor: P-MOSFET
Power dissipation: 83W
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 18A
Gate-source voltage: 15V
On-state resistance: 0.12Ω
Produkt ist nicht verfügbar
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IXTY10P15T IXT_10P15T.pdf
IXTY10P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate-source voltage: ±15V
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Produkt ist nicht verfügbar
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IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 150W
Case: TO252
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate-source voltage: ±15V
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
Produkt ist nicht verfügbar
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IXTY1N80P IXTA(P,U,Y)1N80P.pdf
IXTY1N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO252
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Reverse recovery time: 700ns
On-state resistance: 14Ω
Produkt ist nicht verfügbar
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IXTY1N100P IXTA(P,Y)1N100P.pdf
IXTY1N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Power dissipation: 50W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Reverse recovery time: 750ns
On-state resistance: 15Ω
Produkt ist nicht verfügbar
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MMIX1Y100N120C3H1 MMIX1Y100N120C3H1.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
Produkt ist nicht verfügbar
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CMA80PD1600NA CMA80PD1600NA.pdf
CMA80PD1600NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Mechanical mounting: screw
Load current: 80A
Gate current: 100/200mA
Max. load current: 126A
Threshold on-voltage: 0.86V
Max. forward voltage: 1.29V
Max. forward impulse current: 1.07kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: SOT227B
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
Produkt ist nicht verfügbar
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MCC72-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC72-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXDN604SI IXDD604PI.pdf
IXDN604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
50+2.7 EUR
100+2.52 EUR
200+2.35 EUR
300+2.3 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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DSEI2X121-02A DSEI2x121-02A.pdf
DSEI2X121-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Max. forward impulse current: 1.3kA
Kind of package: tube
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.99 EUR
5+32.38 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CPC1130NTR CPC1130N.pdf
CPC1130NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1114N CPC1114N.pdf
CPC1114N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1114NTR CPC1114N.pdf
CPC1114NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CS45-16IO1 description CS45-08IO1-DTE.pdf CS45-16IO1.pdf
CS45-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
10+7.21 EUR
11+6.68 EUR
13+5.91 EUR
15+5.48 EUR
30+5.21 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
CS45-16IO1R CS45-16io1R.pdf
CS45-16IO1R
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.65 EUR
9+8.01 EUR
11+7.11 EUR
30+6.64 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CS45-12IO1 CS45-08IO1-DTE.pdf
CS45-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.44 EUR
12+6.08 EUR
14+5.25 EUR
30+4.76 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CS45-08io1 CS45-08IO1-DTE.pdf
CS45-08io1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Produkt ist nicht verfügbar
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IXFP30N25X3 IXFA(P,Y)30N25X3.pdf
IXFP30N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.54 EUR
15+4.83 EUR
Mindestbestellmenge: 10
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IXFY30N25X3 IXFA(P,Y)30N25X3.pdf
IXFY30N25X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.62 EUR
15+4.96 EUR
25+4.63 EUR
Mindestbestellmenge: 13
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FMM50-025TF DS100040A-(FMM50-025TF).pdf
FMM50-025TF
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Kind of channel: enhancement
Technology: HiPerFET™; Trench
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET x2
Gate charge: 78nC
Reverse recovery time: 84ns
On-state resistance: 60mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 125W
Pulsed drain current: 130A
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.82 EUR
4+22.19 EUR
10+19.68 EUR
25+17.62 EUR
Mindestbestellmenge: 3
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IXTP170N075T2 IXTA(P)170N075T2.pdf
IXTP170N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.88 EUR
25+2.9 EUR
50+2.89 EUR
Mindestbestellmenge: 15
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IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
Mindestbestellmenge: 24
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DSEP15-06A DSEP15-06A.pdf
DSEP15-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.35V
Load current: 15A
Max. forward impulse current: 110A
Case: TO220AC
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Kind of package: tube
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 35ns
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
31+2.35 EUR
34+2.16 EUR
41+1.74 EUR
50+1.69 EUR
Mindestbestellmenge: 23
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IXTP48P05T IXT_48P05T.pdf
IXTP48P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
20+3.68 EUR
50+3.12 EUR
100+3.02 EUR
Mindestbestellmenge: 15
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IXTY48P05T IXT_48P05T.pdf
IXTY48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTA48P05T IXT_48P05T.pdf
IXTA48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 30ns
Gate charge: 53nC
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTA48P05T-TRL littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTY48P05T-TRL littelfusediscretemosfetspchannelixt48p05td.pdf
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSA120X200LB-TUB DSA120X200LB.pdf
DSA120X200LB-TUB
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Semiconductor structure: double independent
Case: SMPD
Mounting: SMD
Type of diode: Schottky rectifying
Power dissipation: 185W
Max. forward voltage: 0.67V
Max. off-state voltage: 200V
Load current: 65A x2
Max. forward impulse current: 700A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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DSEI30-10AR 93021.pdf
DSEI30-10AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 200A; ISOPLUS247™; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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NCD2400MTR NCD2400M.pdf
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
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IXFN360N15T2 IXFN360N15T2.pdf
IXFN360N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Power dissipation: 1.07kW
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXBF20N360 IXBF20N360.pdf
IXBF20N360
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Mounting: THT
Gate charge: 110nC
Power dissipation: 230W
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Produkt ist nicht verfügbar
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IXBX50N360HV IXBX50N360HV.pdf
IXBX50N360HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV
Mounting: THT
Gate charge: 0.21µC
Turn-on time: 889ns
Turn-off time: 1.88µs
Power dissipation: 660W
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Produkt ist nicht verfügbar
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CPC3720CTR CPC3720.pdf
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
182+0.39 EUR
199+0.36 EUR
226+0.32 EUR
250+0.29 EUR
Mindestbestellmenge: 103
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MCC95-16io1B MCC95-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.01 EUR
5+42.86 EUR
Mindestbestellmenge: 2
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MDD95-16N1B MDD95-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.6kV
Load current: 120A
Max. load current: 180A
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.04 EUR
Mindestbestellmenge: 2
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MDD95-12N1B MDD95-12N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD95-12N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 120A; TO240AA; Ufmax: 1.13V
Kind of package: bulk
Case: TO240AA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Max. off-state voltage: 1.2kV
Load current: 120A
Max. load current: 180A
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.54 EUR
5+34.39 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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