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DSB60C30PB DSB60C30PB IXYS DSB60C30PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
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40+2.13 EUR
45+1.9 EUR
51+1.69 EUR
57+1.51 EUR
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DSB60C60PB DSB60C60PB IXYS DSB60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C30HB DSB60C30HB IXYS DSB60C30HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C45HB DSB60C45HB IXYS DSB60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.58V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C45PB DSB60C45PB IXYS DSB60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
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18+4.83 EUR
20+4.27 EUR
50+3.84 EUR
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IXYP8N90C3 IXYP8N90C3 IXYS IXYP(y)8N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
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IXBOD2-56R IXBOD2-56R IXYS _Katalog LF_IXYS_WESTCODE_2021.pdf Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFH120N25X3 IXFH120N25X3 IXYS IXFH(T,Q)120N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXFH120N20P IXFH120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
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IXFH120N15P IXFH120N15P IXYS IXF_120N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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9+9.54 EUR
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DSEI120-12A DSEI120-12A IXYS dsei120-12a.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS DSEI120-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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5+18.37 EUR
6+16.89 EUR
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DSEI12-12A DSEI12-12A IXYS DSEI12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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25+3.49 EUR
27+3.21 EUR
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DSEI12-12AZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
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DSEI12-12AZ-TUB IXYS DSEI12-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
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IXTA100N04T2 IXTA100N04T2 IXYS IXTA(P)100N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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MG06400D-BN4MM IXYS MG06400D-BN4MM.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Max. off-state voltage: 0.6kV
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
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DHG10I1800PA DHG10I1800PA IXYS DHG10I1800PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.33V
Load current: 10A
Max. forward impulse current: 60A
Power dissipation: 85W
Max. off-state voltage: 1.8kV
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Case: TO220AC
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: THT
auf Bestellung 103 Stücke:
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23+3.71 EUR
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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB IXYS DAA10EM1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Max. forward voltage: 1.14V
Load current: 10A
Max. forward impulse current: 130A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
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DAA10EM1800PZ-TRL IXYS media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.21V
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
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DAA10P1800PZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
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DAA10P1800PZ-TUB DAA10P1800PZ-TUB IXYS DAA10P1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Max. forward voltage: 1.53V
Load current: 10A
Max. forward impulse current: 150A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
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DMA10P1800PZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 130A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
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DMA10P1800PZ-TUB IXYS DMA10P1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 100A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
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IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Gate charge: 150nC
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 600V
Power dissipation: 625W
Case: TO247-3
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Mounting: THT
Polarisation: unipolar
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IXFT70N20Q3 IXFT70N20Q3 IXYS IXFH(T)70N20Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 67nC
On-state resistance: 40mΩ
Drain current: 70A
Drain-source voltage: 200V
Power dissipation: 690W
Kind of channel: enhancement
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IXFT70N30Q3 IXFT70N30Q3 IXYS IXFH(T)70N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 54mΩ
Drain current: 70A
Drain-source voltage: 300V
Power dissipation: 830W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CLA30E1200HB CLA30E1200HB IXYS CLA30E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 28mA
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.3kA
Type of thyristor: thyristor
auf Bestellung 280 Stücke:
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12+7.12 EUR
14+6.33 EUR
17+5.14 EUR
18+4.86 EUR
30+4.51 EUR
120+3.88 EUR
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DLA60I1200HA DLA60I1200HA IXYS DLA60I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 850A
Kind of package: tube
Power dissipation: 500W
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10+8.59 EUR
11+7.79 EUR
12+7.29 EUR
13+6.72 EUR
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CLA40E1200HR CLA40E1200HR IXYS CLA40E1200HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
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6+14.68 EUR
7+13.6 EUR
10+11.32 EUR
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DCG10P1200HR DCG10P1200HR IXYS DCG10P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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2+56.91 EUR
3+51.05 EUR
10+47.65 EUR
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DCG17P1200HR DCG17P1200HR IXYS DCG17P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 5 Stücke:
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DPG60C200HB DPG60C200HB IXYS Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 160W
auf Bestellung 268 Stücke:
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11+7.76 EUR
13+6.97 EUR
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DHG40C1200HB DHG40C1200HB IXYS DHG40C1200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 2.24V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
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DMA50I1200HA DMA50I1200HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Kind of package: tube
auf Bestellung 289 Stücke:
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14+6.1 EUR
17+5.3 EUR
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DHG20I1200HA DHG20I1200HA IXYS DHG20I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
auf Bestellung 294 Stücke:
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16+5.63 EUR
20+4.32 EUR
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DCG20C1200HR DCG20C1200HR IXYS DCG20C1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Technology: SiC
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4+24.25 EUR
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DCG35C1200HR DCG35C1200HR IXYS DCG35C1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
auf Bestellung 60 Stücke:
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3+33.45 EUR
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DHG30I1200HA DHG30I1200HA IXYS DHG30I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.95V
Max. forward impulse current: 200A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 180W
auf Bestellung 45 Stücke:
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13+6.74 EUR
14+6.45 EUR
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
auf Bestellung 38 Stücke:
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19+4.63 EUR
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DPG30C200HB DPG30C200HB IXYS Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet?assetguid=C7522524-F8A5-4F62-BC19-FCC564D51D7C Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 90W
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17+5.07 EUR
23+3.87 EUR
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IXA12IF1200HB IXA12IF1200HB IXYS IXA12IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 27nC
Turn-on time: 110ns
Turn-off time: 350ns
Power dissipation: 85W
Collector current: 13A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
auf Bestellung 258 Stücke:
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13+6.84 EUR
16+5.63 EUR
30+4.83 EUR
120+4.26 EUR
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IXTP18P10T IXTP18P10T IXYS IXT_18P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.27 EUR
24+3.68 EUR
29+3 EUR
50+2.38 EUR
100+1.9 EUR
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MCO600-22io1 IXYS Littelfuse-Power-Semiconductors-MCO600-22io1-Datasheet?assetguid=513E57AB-C4CD-4D86-994B-0EA2FF79457F Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCO600-20io1 IXYS Littelfuse-Power-Semiconductors-MCO600-20io1-Datasheet?assetguid=053B5CC5-F625-4018-BAE3-C7C231E84F22 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN100N50P IXFN100N50P IXYS 99497.pdf description Category: Transistor drivers
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Technology: HiPerFET™
Drain current: 75A
Pulsed drain current: 250A
Drain-source voltage: 500V
Power dissipation: 1.04kW
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CPC1973Y CPC1973Y IXYS CPC1973.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.35mA
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 5Ω
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 34 Stücke:
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7+12.98 EUR
10+11.4 EUR
25+10.36 EUR
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CPC1302G CPC1302G IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
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25+3.51 EUR
50+2.49 EUR
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CPC1302GSTR CPC1302GSTR IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-off time: 80µs
Turn-on time: 1µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
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CLA60PD1200NA CLA60PD1200NA IXYS CLA60PD1200NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
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1+85.08 EUR
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 40/80mA
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Max. forward voltage: 1.21V
Load current: 100A
Type of semiconductor module: diode-thyristor
Max. load current: 150A
Max. off-state voltage: 1.2kV
Case: SOT227B
Max. forward impulse current: 1.5kA
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2+48.28 EUR
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CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 57 Stücke:
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3+31.27 EUR
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MMO62-12IO6 MMO62-12IO6 IXYS MMo62-12io6-DTE.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 34 Stücke:
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3+36.85 EUR
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IXGN200N60B3 IXGN200N60B3 IXYS ixgn200n60b3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X61-02A DSEI2X61-02A IXYS DSEI2x61-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
auf Bestellung 121 Stücke:
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3+38.34 EUR
10+35.13 EUR
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DSEP2X91-03A DSEP2X91-03A IXYS DSEP2X91-03A-DTE.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
auf Bestellung 63 Stücke:
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2+49.43 EUR
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DSB60C30PB DSB60C30PB.pdf
DSB60C30PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
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40+2.13 EUR
45+1.9 EUR
51+1.69 EUR
57+1.51 EUR
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DSB60C60PB DSB60C60PB.pdf
DSB60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C30HB DSB60C30HB.pdf
DSB60C30HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C45HB DSB60C45HB.pdf
DSB60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.58V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C45PB DSB60C45PB.pdf
DSB60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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IXYP8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.38 EUR
18+4.83 EUR
20+4.27 EUR
50+3.84 EUR
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IXYP8N90C3 IXYP(y)8N90C3.pdf
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Produkt ist nicht verfügbar
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IXBOD2-56R _Katalog LF_IXYS_WESTCODE_2021.pdf
IXBOD2-56R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFH120N25X3 IXFH(T,Q)120N25X3_HV.pdf
IXFH120N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 292 Stücke:
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5+17.14 EUR
30+14.73 EUR
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IXFH120N20P IXFH(K)120N20P.pdf
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
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6+16.93 EUR
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IXFH120N15P IXF_120N15P.pdf
IXFH120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
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8+11.07 EUR
9+9.54 EUR
10+8.97 EUR
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DSEI120-12A description dsei120-12a.pdf
DSEI120-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
auf Bestellung 234 Stücke:
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6+14.89 EUR
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DSEI120-12AZ-TUB DSEI120-12AZ.pdf
DSEI120-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
auf Bestellung 30 Stücke:
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5+18.37 EUR
6+16.89 EUR
10+14.97 EUR
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DSEI12-12A DSEI12-12A.pdf
DSEI12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 109 Stücke:
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25+3.49 EUR
27+3.21 EUR
30+2.84 EUR
50+2.61 EUR
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DSEI12-12AZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEI12-12AZ-TUB DSEI12-12AZ.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA100N04T2 IXTA(P)100N04T2.pdf
IXTA100N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
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MG06400D-BN4MM MG06400D-BN4MM.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Max. off-state voltage: 0.6kV
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.06 EUR
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IXA20PG1200DHGLB IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA20PG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
auf Bestellung 23 Stücke:
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6+14.43 EUR
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10+12.28 EUR
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DHG10I1800PA DHG10I1800PA.pdf
DHG10I1800PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.33V
Load current: 10A
Max. forward impulse current: 60A
Power dissipation: 85W
Max. off-state voltage: 1.8kV
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Case: TO220AC
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: THT
auf Bestellung 103 Stücke:
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19+4.58 EUR
23+3.71 EUR
50+3.05 EUR
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DAA10EM1800PZ-TUB DAA10EM1800PZ.pdf
DAA10EM1800PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Max. forward voltage: 1.14V
Load current: 10A
Max. forward impulse current: 130A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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DAA10EM1800PZ-TRL media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.21V
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DAA10P1800PZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DAA10P1800PZ-TUB DAA10P1800PZ.pdf
DAA10P1800PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Max. forward voltage: 1.53V
Load current: 10A
Max. forward impulse current: 150A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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DMA10P1800PZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 130A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DMA10P1800PZ-TUB DMA10P1800PZ.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 100A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Gate charge: 150nC
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 600V
Power dissipation: 625W
Case: TO247-3
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFT70N20Q3 IXFH(T)70N20Q3.pdf
IXFT70N20Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 67nC
On-state resistance: 40mΩ
Drain current: 70A
Drain-source voltage: 200V
Power dissipation: 690W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT70N30Q3 IXFH(T)70N30Q3.pdf
IXFT70N30Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 54mΩ
Drain current: 70A
Drain-source voltage: 300V
Power dissipation: 830W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CLA30E1200HB CLA30E1200HB.pdf
CLA30E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 28mA
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.3kA
Type of thyristor: thyristor
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.12 EUR
14+6.33 EUR
17+5.14 EUR
18+4.86 EUR
30+4.51 EUR
120+3.88 EUR
Mindestbestellmenge: 12 Stücke
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DLA60I1200HA DLA60I1200HA.pdf
DLA60I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 850A
Kind of package: tube
Power dissipation: 500W
auf Bestellung 106 Stücke:
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10+8.59 EUR
11+7.79 EUR
12+7.29 EUR
13+6.72 EUR
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CLA40E1200HR CLA40E1200HR.pdf
CLA40E1200HR
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 20 Stücke:
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6+14.68 EUR
7+13.6 EUR
10+11.32 EUR
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DCG10P1200HR DCG10P1200HR.pdf
DCG10P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 10 Stücke:
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2+56.91 EUR
3+51.05 EUR
10+47.65 EUR
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DCG17P1200HR DCG17P1200HR.pdf
DCG17P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 5 Stücke:
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1+140.15 EUR
3+128.31 EUR
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DPG60C200HB Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8
DPG60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 160W
auf Bestellung 268 Stücke:
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11+7.76 EUR
13+6.97 EUR
14+6.16 EUR
30+5.65 EUR
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DHG40C1200HB DHG40C1200HB.pdf
DHG40C1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 2.24V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
auf Bestellung 35 Stücke:
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AnzahlPrivatkunde
12+7.32 EUR
13+6.7 EUR
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DMA50I1200HA
DMA50I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Kind of package: tube
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
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14+6.1 EUR
17+5.3 EUR
30+4.7 EUR
120+3.99 EUR
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DHG20I1200HA DHG20I1200HA.pdf
DHG20I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
auf Bestellung 294 Stücke:
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AnzahlPrivatkunde
16+5.63 EUR
20+4.32 EUR
30+4.11 EUR
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DCG20C1200HR DCG20C1200HR.pdf
DCG20C1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Technology: SiC
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DCG35C1200HR DCG35C1200HR.pdf
DCG35C1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
auf Bestellung 60 Stücke:
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DHG30I1200HA DHG30I1200HA.pdf
DHG30I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.95V
Max. forward impulse current: 200A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 180W
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
auf Bestellung 38 Stücke:
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DPG30C200HB Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet?assetguid=C7522524-F8A5-4F62-BC19-FCC564D51D7C
DPG30C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 90W
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IXA12IF1200HB IXA12IF1200HB.pdf
IXA12IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 27nC
Turn-on time: 110ns
Turn-off time: 350ns
Power dissipation: 85W
Collector current: 13A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
auf Bestellung 258 Stücke:
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120+4.26 EUR
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IXTP18P10T IXT_18P10T.pdf
IXTP18P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
auf Bestellung 341 Stücke:
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29+3 EUR
50+2.38 EUR
100+1.9 EUR
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MCO600-22io1 Littelfuse-Power-Semiconductors-MCO600-22io1-Datasheet?assetguid=513E57AB-C4CD-4D86-994B-0EA2FF79457F
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCO600-20io1 Littelfuse-Power-Semiconductors-MCO600-20io1-Datasheet?assetguid=053B5CC5-F625-4018-BAE3-C7C231E84F22
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN100N50P description 99497.pdf
IXFN100N50P
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Technology: HiPerFET™
Drain current: 75A
Pulsed drain current: 250A
Drain-source voltage: 500V
Power dissipation: 1.04kW
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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LF21844NTR LF21844NTR.pdf
LF21844NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CPC1973Y CPC1973.pdf
CPC1973Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.35mA
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 5Ω
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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CPC1302G CPC1302.pdf
CPC1302G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
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CPC1302GSTR CPC1302.pdf
CPC1302GSTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-off time: 80µs
Turn-on time: 1µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
auf Bestellung 76 Stücke:
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CLA60PD1200NA CLA60PD1200NA.pdf
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 40/80mA
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Max. forward voltage: 1.21V
Load current: 100A
Type of semiconductor module: diode-thyristor
Max. load current: 150A
Max. off-state voltage: 1.2kV
Case: SOT227B
Max. forward impulse current: 1.5kA
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CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 57 Stücke:
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3+31.27 EUR
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MMO62-12IO6 MMo62-12io6-DTE.pdf
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 34 Stücke:
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3+36.85 EUR
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IXGN200N60B3 ixgn200n60b3.pdf
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X61-02A DSEI2x61-02A.pdf
DSEI2X61-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
auf Bestellung 121 Stücke:
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DSEP2X91-03A description DSEP2X91-03A-DTE.pdf
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
auf Bestellung 63 Stücke:
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