| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DSEI12-12AZ-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 50ns Semiconductor structure: single diode Case: D2PAK; TO263AB Max. forward voltage: 2.6V Max. forward impulse current: 75A Technology: FRED Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DSEI12-12AZ-TUB | IXYS |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 11A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 2.2V Max. forward impulse current: 75A Power dissipation: 78W Technology: FRED Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTA100N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO263 On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 34ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 147W Technology: ISOPLUS™; Sonic FRD™ |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA20PG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Type of semiconductor module: IGBT Power dissipation: 130W Technology: ISOPLUS™; Sonic FRD™ Pulsed collector current: 45A Max. off-state voltage: 1.2kV Electrical mounting: SMT Semiconductor structure: diode/transistor Case: SMPD-B Gate-emitter voltage: ±20V Collector current: 23A Topology: IGBT half-bridge |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA30E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 0.3kA Case: TO247AD Gate current: 28mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: THT |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DCG10P1200HR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 12.5A Semiconductor structure: double series Case: ISO247™ Max. forward voltage: 2.2V Max. forward impulse current: 750A Kind of package: tube Features of semiconductor devices: ultrafast switching |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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DCG17P1200HR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A Semiconductor structure: double series Case: ISO247™ Max. forward voltage: 2.2V Max. forward impulse current: 1kA Kind of package: tube Features of semiconductor devices: ultrafast switching |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN100N50P | IXYS |
 Category: Transistor modulesDescription: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 75A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 250A Power dissipation: 1.04kW Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1973Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 0.35mA Switched voltage: max. 400V AC Manufacturer series: OptoMOS Relay variant: 1-phase On-state resistance: 5Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Turn-on time: 5ms Turn-off time: 3ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
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CPC1302G | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V Kind of output: Darlington Case: DIP8 Mounting: THT Type of optocoupler: optocoupler Number of channels: 2 Collector-emitter voltage: 350V CTR@If: 1000-8000%@1mA Insulation voltage: 3.75kV |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA100PD1200NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw Max. forward impulse current: 1.5kA Gate current: 40/80mA Max. forward voltage: 1.21V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 100A Max. load current: 150A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.83V Case: SOT227B |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGN200N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Power dissipation: 830W Technology: GenX3™; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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DSEI2X61-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 71A x2 Case: SOT227B Max. forward voltage: 0.88V Max. forward impulse current: 0.95kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 142A Kind of package: tube |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEC120-12AK | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W Mounting: THT Kind of package: tube Max. forward voltage: 2.66V Power dissipation: 330W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 60A x2 Semiconductor structure: common cathode; double Case: TO264 Type of diode: rectifying Reverse recovery time: 40ns Max. forward impulse current: 0.5kA |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
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CLA80MT1200NHB | IXYS |
Category: Triacs Description: Triac; 1.2kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 440A Max. forward impulse current: 0.44kA Gate current: 70/90mA Max. off-state voltage: 1.2kV Max. load current: 40A Kind of package: tube Case: TO247-3 Typ of triac: standard Mounting: THT |
Produkt ist nicht verfügbar |
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CLA60MT1200NHB | IXYS |
Category: Triacs Description: Triac; 1.2kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 325A Max. forward impulse current: 325A Gate current: 60/80mA Max. off-state voltage: 1.2kV Max. load current: 30A Kind of package: tube Case: TO247-3 Typ of triac: standard Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CLA60MT1200NHR | IXYS |
Category: Triacs Description: Triac; 1.2kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 325A Max. forward impulse current: 325A Gate current: 60/80mA Max. off-state voltage: 1.2kV Max. load current: 30A Kind of package: tube Case: ISO247™ Typ of triac: standard Mounting: THT |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH230N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 230A Power dissipation: 650W Case: TO247-3 On-state resistance: 4.7mΩ Mounting: THT Kind of channel: enhancement Gate charge: 250nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Reverse recovery time: 82ns |
auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH320N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO247-3 On-state resistance: 3.5mΩ Mounting: THT Gate charge: 430nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCB40P1200LB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCB40P1200LB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSEP8-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Technology: HiPerFRED™ Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO220AC Kind of package: tube Reverse recovery time: 40ns Max. forward voltage: 1.96V Load current: 8A Max. forward impulse current: 40A Power dissipation: 60W |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4426MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Supply voltage: 4.5...30V |
auf Bestellung 1998 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4426NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Supply voltage: 4.5...35V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXBN42N170A | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Collector current: 21A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 265A Power dissipation: 313W Technology: BiMOSFET™ Features of semiconductor devices: high voltage Mechanical mounting: screw |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMIX1G320N60B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 600V Collector current: 180A Power dissipation: 1kW Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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OMA160 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Turn-on time: 125µs Switched voltage: max. 250V AC; max. 250V DC Max. operating current: 50mA Turn-off time: 125µs Control current max.: 50mA On-state resistance: 100Ω |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1560G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Mounting: THT Case: DIP8 Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 0.1ms Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 300mA Turn-off time: 400µs Control current max.: 50mA On-state resistance: 5.6Ω |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEP30-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: TO247-2 Kind of package: tube Max. forward voltage: 2.51V Power dissipation: 165W Reverse recovery time: 25ns Technology: HiPerFRED™ |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEP30-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: TO247-2 Kind of package: tube Max. forward voltage: 1.25V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP30-06BR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; ISOPLUS247™; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: ISOPLUS247™ Kind of package: tube Max. forward voltage: 1.61V Power dissipation: 135W Reverse recovery time: 25ns Technology: HiPerFRED™ |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYH40N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 74nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 81ns Turn-off time: 237ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH40N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 74nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 81ns Turn-off time: 237ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYX140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 122ns Turn-off time: 0.3µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LCC110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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LCC110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Contacts configuration: SPDT Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Mounting: SMT Relay variant: 1-phase; current source |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LCC110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
Produkt ist nicht verfügbar |
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| LCC110PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LCC110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LCC120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 0.17A Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 20Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LCC120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Contacts configuration: SPDT Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.17A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 20Ω Type of relay: solid state Mounting: SMT Relay variant: 1-phase; current source |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
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| LCC120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 0.17A Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 20Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LAA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA Kind of output: MOSFET |
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LAA110PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
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IXFK80N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO264P On-state resistance: 38mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class |
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IXFH80N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET On-state resistance: 38mΩ Reverse recovery time: 200ns Mounting: THT Power dissipation: 890W Gate charge: 0.14µC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 80A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO247-3 |
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IXFH80N65X2-4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4 Type of transistor: N-MOSFET On-state resistance: 38mΩ Reverse recovery time: 200ns Mounting: THT Power dissipation: 890W Gate charge: 0.14µC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 80A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO247-4 |
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IXTH80N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 137nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 465ns |
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IXFT80N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO268 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
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MCC56-16io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V Case: TO240AA Max. forward impulse current: 1.6kA Gate current: 100/200mA Max. forward voltage: 1.57V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 60A Kind of package: bulk Semiconductor structure: double series |
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| IXYH120N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 260A Power dissipation: 1.36kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 620A Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFB44N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
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IXTP44N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO220AB On-state resistance: 30mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 60ns Features of semiconductor devices: thrench gate power mosfet |
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MMIX1F44N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 694W Case: SMPD Gate-source voltage: ±30V On-state resistance: 245mΩ Mounting: SMD Gate charge: 264nC Kind of channel: enhancement Reverse recovery time: 300ns Pulsed drain current: 110A |
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IXFA4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO263 Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
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IXFA4N100Q | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 150W Case: TO263AA Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Technology: HiPerFET™ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP4N100PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.1A Pulsed drain current: 8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 300ns |
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Im Einkaufswagen Stück im Wert von UAH |
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IXTH4N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 290W Case: TO247-3 Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.1µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DSEI12-12AZ-TRL |
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| DSEI12-12AZ-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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| IXTA100N04T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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| IXA30RG1200DHGLB |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| IXA20PG1200DHGLB |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 45A
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Semiconductor structure: diode/transistor
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of semiconductor module: IGBT
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 45A
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Semiconductor structure: diode/transistor
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Topology: IGBT half-bridge
auf Bestellung 22 Stücke:
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| CLA30E1200HB |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.3kA
Case: TO247AD
Gate current: 28mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.3kA
Case: TO247AD
Gate current: 28mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| DCG10P1200HR |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| DCG17P1200HR |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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| IXFN100N50P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1973Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.35mA
Switched voltage: max. 400V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 5Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 5ms
Turn-off time: 3ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.35mA
Switched voltage: max. 400V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 5Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 5ms
Turn-off time: 3ms
Control current max.: 50mA
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| CPC1302G |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA100PD1200NA |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A
Max. load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Case: SOT227B
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A
Max. load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Case: SOT227B
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGN200N60B3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
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| DSEI2X61-02A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEC120-12AK |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.66V
Power dissipation: 330W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO264
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward impulse current: 0.5kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W
Mounting: THT
Kind of package: tube
Max. forward voltage: 2.66V
Power dissipation: 330W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO264
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward impulse current: 0.5kA
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH26N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CLA80MT1200NHB |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA60MT1200NHB |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA60MT1200NHR |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH230N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Reverse recovery time: 82ns
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH320N10T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| MCB40P1200LB-TRR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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| MCB40P1200LB-TUB |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP8-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4426MTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Supply voltage: 4.5...30V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Supply voltage: 4.5...30V
auf Bestellung 1998 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4426NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXBN42N170A |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| MMIX1G320N60B3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| OMA160 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-on time: 125µs
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 50mA
Turn-off time: 125µs
Control current max.: 50mA
On-state resistance: 100Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-on time: 125µs
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 50mA
Turn-off time: 125µs
Control current max.: 50mA
On-state resistance: 100Ω
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1560G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP30-06B |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP30-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP30-06BR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH40N90C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH40N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYX140N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 122ns
Turn-off time: 0.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LCC110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| LCC110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Contacts configuration: SPDT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Contacts configuration: SPDT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| LCC110P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCC110PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCC110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCC120 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCC120S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Contacts configuration: SPDT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.17A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Contacts configuration: SPDT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.17A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
| LCC120STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LAA110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA110PL |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK80N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH80N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH80N65X2-4 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH80N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT80N65X2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC56-16io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Max. forward voltage: 1.57V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Max. forward voltage: 1.57V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 60A
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH120N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 260A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 620A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 260A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 620A
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFB44N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP44N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
| MMIX1F44N100Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 110A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA4N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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| IXFA4N100Q |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFP4N100PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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| IXTH4N100L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH