| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFK80N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO264P On-state resistance: 38mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH80N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET On-state resistance: 38mΩ Reverse recovery time: 200ns Mounting: THT Power dissipation: 890W Gate charge: 0.14µC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 80A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO247-3 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH80N65X2-4 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4 Type of transistor: N-MOSFET On-state resistance: 38mΩ Reverse recovery time: 200ns Mounting: THT Power dissipation: 890W Gate charge: 0.14µC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 80A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO247-4 |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH80N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 137nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 465ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT80N65X2HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO268 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCC56-16io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.6kA Gate current: 100/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH120N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3 Type of transistor: IGBT Power dissipation: 1.36kW Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 260A Collector-emitter voltage: 650V Pulsed collector current: 620A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFB44N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTP44N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO220AB On-state resistance: 30mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMIX1F44N100Q3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 110A Power dissipation: 694W Case: SMPD Gate-source voltage: ±30V On-state resistance: 245mΩ Mounting: SMD Gate charge: 264nC Kind of channel: enhancement Technology: HiPerFET™; Q3-Class Reverse recovery time: 300ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA4N100P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO263 Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFA4N100Q | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 150W Case: TO263AA Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Technology: HiPerFET™ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFP4N100PM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.1A Pulsed drain current: 8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTH4N100L | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 290W Case: TO247-3 Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.1µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFB44N100Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 264nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXGA48N60C3-TRL | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 75A; 300W; D2PAK Type of transistor: IGBT Power dissipation: 300W Case: D2PAK Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Collector-emitter voltage: 600V Pulsed collector current: 250A Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTA110N055T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTQ36P15P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO3P Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MCMA550PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Case: SimBus F Electrical mounting: Press-Fit; screw Max. load current: 864A Max. forward impulse current: 13kA Load current: 550A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DSEI12-10A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 75A Case: TO220AC Max. forward voltage: 2.7V Heatsink thickness: 2.29...2.79mm Power dissipation: 78W Reverse recovery time: 50ns Technology: FRED |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1001N | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V Insulation voltage: 1.5kV Type of optocoupler: optocoupler Turn-on time: 1µs Case: SOP4 Turn-off time: 30µs Number of channels: 1 Mounting: SMD Collector-emitter voltage: 30V CTR@If: 100-800%@0.2mA Kind of output: transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CPC1001NTR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Operating temperature: -40...85°C Insulation voltage: 1.5kV Type of optocoupler: optocoupler Turn-on time: 1µs Switched voltage: max. 30V DC Case: SOP4 Max. operating current: 0.1A Turn-off time: 30µs Number of channels: 1 Control current max.: 5mA Mounting: SMD CTR@If: 100-800%@0.2mA Kind of output: transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH44N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 658W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; Polar™ |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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PBB150P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PBB150 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PBB150PTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PBB150S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PBB150STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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CPC1303GRTR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4 Number of channels: 1 Mounting: SMD Collector-emitter voltage: 30V CTR@If: 200-2500%@0.2mA Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Turn-on time: 2µs Case: SO4 Turn-off time: 8µs |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1301G | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4 Case: DIP4 Turn-off time: 60µs Turn-on time: 1µs Kind of output: Darlington Trigger current: 50mA Slew rate: 0.25V/μs Number of channels: 1 Max. off-state voltage: 5V CTR@If: 1000-8000%@1mA Collector-emitter voltage: 350V Insulation voltage: 5kV Mounting: THT Type of optocoupler: optocoupler |
auf Bestellung 409 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA127L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA127S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP6 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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LCB127S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NC Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP6 Max. operating current: 200mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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CS60-16IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube Type of thyristor: thyristor Mounting: THT Gate current: 200mA Max. load current: 75A Max. forward impulse current: 1.4A Load current: 60A Max. off-state voltage: 1.6kV Case: PLUS247™ Kind of package: tube |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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LBB127P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS Max. operating current: 200mA Body dimensions: 9.66x6.35x2.16mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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CS60-14io1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube Type of thyristor: thyristor Mounting: THT Gate current: 200mA Max. load current: 75A Max. forward impulse current: 1.4A Load current: 60A Max. off-state voltage: 1.4kV Case: ISOPLUS247™ Kind of package: tube |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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PAA127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS Max. operating current: 200mA Body dimensions: 9.65x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 280V AC; max. 280V DC Turn-off time: 0.5ms Turn-on time: 500µs Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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LBA127L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Max. operating current: 200mA Body dimensions: 9.66x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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LBA127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Max. operating current: 200mA Body dimensions: 9.66x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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LBA127LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Max. operating current: 200mA Body dimensions: 9.66x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD56-16N1B | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V Mechanical mounting: screw Max. forward voltage: 1.14V Load current: 71A Max. load current: 150A Max. forward impulse current: 1.19kA Max. off-state voltage: 1.6kV Kind of package: bulk Case: TO240AA Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCD95-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 116A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.25kA Electrical mounting: FASTON connectors; screw Max. load current: 182A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA120PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 120A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 2.2kA Electrical mounting: FASTON connectors; screw Max. load current: 190A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA150PD2200YB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 150A Case: TO240AA Max. forward voltage: 1.18V Max. forward impulse current: 4.3kA Electrical mounting: FASTON connectors; screw Max. load current: 235A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA40PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 40A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors; screw Max. load current: 63A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA55PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 55A Case: TO240AA Max. forward voltage: 1.2V Max. forward impulse current: 1kA Electrical mounting: FASTON connectors; screw Max. load current: 86A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA75PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 75A Case: TO240AA Max. forward voltage: 1.21V Max. forward impulse current: 1.4kA Electrical mounting: FASTON connectors; screw Max. load current: 118A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA95PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 95A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.7kA Electrical mounting: FASTON connectors; screw Max. load current: 149A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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MCD224-20io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.03V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 390A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.72V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCD224-22io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.03V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 390A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.72V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
MCD310-22io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCD225-14io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCD255-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
MCD310-08io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
MCD310-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
MCD310-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MCMA265PD1600KB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 268A Case: Y1-CU Max. forward voltage: 1.15V Max. forward impulse current: 8.5kA Electrical mounting: screw Max. load current: 421A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCD255-12io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK80N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 30.02 EUR |
| 4+ | 25.2 EUR |
| 5+ | 24.35 EUR |
| IXFH80N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.14 EUR |
| 6+ | 16.71 EUR |
| IXFH80N65X2-4 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.9 EUR |
| 10+ | 16.15 EUR |
| IXTH80N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT80N65X2HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC56-16io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 45.04 EUR |
| 7+ | 42.02 EUR |
| 10+ | 40.71 EUR |
| IXYH120N65C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 260A
Collector-emitter voltage: 650V
Pulsed collector current: 620A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 260A
Collector-emitter voltage: 650V
Pulsed collector current: 620A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFB44N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP44N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO220AB
On-state resistance: 30mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.28 EUR |
| 46+ | 1.87 EUR |
| 51+ | 1.69 EUR |
| 100+ | 1.58 EUR |
| MMIX1F44N100Q3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 77.73 EUR |
| 3+ | 68.62 EUR |
| 10+ | 61.67 EUR |
| 20+ | 57.58 EUR |
| IXFA4N100P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA4N100Q |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFP4N100PM |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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| IXTH4N100L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFB44N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
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| IXGA48N60C3-TRL |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 75A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTA110N055T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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| IXTQ36P15P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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| MCMA550PD1600PTSF |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 864A
Max. forward impulse current: 13kA
Load current: 550A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 864A
Max. forward impulse current: 13kA
Load current: 550A
Produkt ist nicht verfügbar
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| DSEI12-10A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.22 EUR |
| 27+ | 3.2 EUR |
| 33+ | 2.65 EUR |
| CPC1001N |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Case: SOP4
Turn-off time: 30µs
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Case: SOP4
Turn-off time: 30µs
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
Kind of output: transistor
Produkt ist nicht verfügbar
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| CPC1001NTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Switched voltage: max. 30V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 30µs
Number of channels: 1
Control current max.: 5mA
Mounting: SMD
CTR@If: 100-800%@0.2mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Switched voltage: max. 30V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 30µs
Number of channels: 1
Control current max.: 5mA
Mounting: SMD
CTR@If: 100-800%@0.2mA
Kind of output: transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXFH44N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.97 EUR |
| 6+ | 15.12 EUR |
| PBB150P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| PBB150 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| PBB150PTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| PBB150S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| PBB150STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1303GRTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.06 EUR |
| 31+ | 2.82 EUR |
| CPC1301G |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4
Case: DIP4
Turn-off time: 60µs
Turn-on time: 1µs
Kind of output: Darlington
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 1
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Insulation voltage: 5kV
Mounting: THT
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; DIP4
Case: DIP4
Turn-off time: 60µs
Turn-on time: 1µs
Kind of output: Darlington
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 1
Max. off-state voltage: 5V
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Insulation voltage: 5kV
Mounting: THT
Type of optocoupler: optocoupler
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.13 EUR |
| 61+ | 1.39 EUR |
| 69+ | 1.24 EUR |
| 100+ | 1.23 EUR |
| LCA127L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.34 EUR |
| 50+ | 8.75 EUR |
| LCA127S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.1 EUR |
| 50+ | 8.59 EUR |
| LCB127 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| LCA127 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.28 EUR |
| LCB127S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| CS60-16IO1 |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 22.71 EUR |
| 5+ | 18.72 EUR |
| 10+ | 16.78 EUR |
| LBB127P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.23 EUR |
| 10+ | 14.13 EUR |
| 50+ | 12.61 EUR |
| CS60-14io1 |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 22.36 EUR |
| 10+ | 20.06 EUR |
| PAA127 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.98 EUR |
| 50+ | 8.51 EUR |
| LBA127L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 23.6 EUR |
| 50+ | 15.47 EUR |
| LBA127 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.17 EUR |
| 10+ | 14.01 EUR |
| 50+ | 12.55 EUR |
| LBA127LS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| MDD56-16N1B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Mechanical mounting: screw
Max. forward voltage: 1.14V
Load current: 71A
Max. load current: 150A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Mechanical mounting: screw
Max. forward voltage: 1.14V
Load current: 71A
Max. load current: 150A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| MCD95-16io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA120PD2200TB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA150PD2200YB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.18V
Max. forward impulse current: 4.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 235A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.18V
Max. forward impulse current: 4.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 235A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA40PD2200TB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 40A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 63A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 40A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 63A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA55PD2200TB |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 55A
Case: TO240AA
Max. forward voltage: 1.2V
Max. forward impulse current: 1kA
Electrical mounting: FASTON connectors; screw
Max. load current: 86A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 55A
Case: TO240AA
Max. forward voltage: 1.2V
Max. forward impulse current: 1kA
Electrical mounting: FASTON connectors; screw
Max. load current: 86A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA75PD2200TB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Max. load current: 118A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Max. load current: 118A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA95PD2200TB |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 149A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 149A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD224-20io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
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| MCD224-22io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
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| MCD310-22io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCD225-14io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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| MCD255-16io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD310-08io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCD310-16io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCD310-18io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCMA265PD1600KB |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Electrical mounting: screw
Max. load current: 421A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Electrical mounting: screw
Max. load current: 421A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD255-12io1 |
![]() |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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