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IXTA4N70X2

IXTA4N70X2 IXYS

littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.6 EUR
32+2.27 EUR
34+2.14 EUR
50+2.07 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTA4N70X2 IXYS

Description: MOSFET N-CH 700V 4A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V.

Weitere Produktangebote IXTA4N70X2 nach Preis ab 2.14 EUR bis 2.89 EUR

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IXTA4N70X2 IXTA4N70X2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.6 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXTA4N70X2 IXTA4N70X2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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IXTA4N70X2 IXTA4N70X2 Hersteller : IXYS media-3322168.pdf MOSFETs TO263 700V 4A N-CH X2CLASS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH