IXTY48P05T IXYS
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO252
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.64 EUR |
| 70+ | 3.79 EUR |
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Technische Details IXTY48P05T IXYS
Description: MOSFET P-CH 50V 48A TO252, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V.
Weitere Produktangebote IXTY48P05T nach Preis ab 3.91 EUR bis 8.64 EUR
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IXTY48P05T | Hersteller : IXYS |
MOSFETs TrenchP Power MOSFET |
auf Bestellung 10377 Stücke: Lieferzeit 10-14 Tag (e) |
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