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IXTA76P10T-TRL IXTA76P10T-TRL IXYS littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
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IXFN56N90P IXFN56N90P IXYS IXFN56N90P.pdf Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Pulsed drain current: 168A
Type of semiconductor module: MOSFET transistor
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IXBT14N300HV IXYS littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
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MCC132-12io1 MCC132-12io1 IXYS L079.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
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MCC132-08io1 MCC132-08io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-16io1 IXYS MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
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MCC132-14io1 IXYS MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
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MCC132-18io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-18IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-14IO1B IXYS MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-16IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Case: ISO247™
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
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CMA80MT1600NHB IXYS CMA80MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
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CMA60MT1600NHB IXYS CMA60MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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DSP8-12A DSP8-12A IXYS DSP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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IX4427N IX4427N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
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IX4427MTR IX4427MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
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IXBT16N170AHV IXBT16N170AHV IXYS IXBA16N170AHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
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IXBT16N170A IXBT16N170A IXYS IXBH(T)16N170A.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
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IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 390mΩ
Gate charge: 197nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Pulsed drain current: 65A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXGP20N120A3 IXGP20N120A3 IXYS IXG_20N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
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IXGP20N120B3 IXGP20N120B3 IXYS IXGA(P)20N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
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IXYP20N120C3 IXYP20N120C3 IXYS IXYH(P)20N120C3_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
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IXYH40N120C3 IXYH40N120C3 IXYS IXYH40N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 175A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120A2 IXGH40N120A2 IXYS IXGH(T)40N120A2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120B2D1 IXGH40N120B2D1 IXYS IXGH40N120B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120C3 IXGH40N120C3 IXYS IXGH40N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS IXGH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Pulsed collector current: 275A
Gate-emitter voltage: ±20V
Collector current: 140A
Collector-emitter voltage: 1.2kV
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IXYH40N120B3 IXYH40N120B3 IXYS IXYH40N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS IXYH40N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 136A
Collector-emitter voltage: 1.2kV
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IXYH40N120B4H1 IXYS PdfFile_145990.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 240A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120C3D1 IXYH40N120C3D1 IXYS IXYH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Pulsed collector current: 230A
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
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IXYT40N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Pulsed collector current: 275A
Collector current: 140A
Collector-emitter voltage: 1.2kV
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IXYT40N120A4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 140A
Collector-emitter voltage: 1.2kV
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DSEI60-12A DSEI60-12A IXYS DSEI60-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
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IXFK48N50 IXFK48N50 IXYS IXFK48N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
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IX4340N IX4340N IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
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CPC1002NTR CPC1002NTR IXYS CPC1002N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Type of relay: solid state
Max. operating current: 700mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 0.55Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
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IXFK102N30P IXFK102N30P IXYS IXFK102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Power dissipation: 700W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
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FDA217 FDA217 IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
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IXDF602PI IXDF602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602PI IXDN602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN604PI IXDN604PI IXYS IXDD604PI.pdf IXD_604.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
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IXDN609PI IXDN609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI614PI IXDI614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXDI604PI IXDI604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDF604PI IXDF604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD604PI IXDD604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI602PI IXDI602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Gate charge: 70nC
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IXTA76P10T-TRL littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a
IXTA76P10T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN56N90P IXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Pulsed drain current: 168A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXBT14N300HV littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
Produkt ist nicht verfügbar
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MCC132-12io1 L079.pdf PCN241015_Y4-M6 screw.pdf
MCC132-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
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MCC132-08io1 PCN241015_Y4-M6 screw.pdf
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-16io1 MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
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MCC132-14io1 MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
Produkt ist nicht verfügbar
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MCC132-18io1 PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-18IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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MCC132-14IO1B MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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MCC132-16IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Case: ISO247™
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
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CMA80MT1600NHB CMA80MT1600NHB.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
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CMA60MT1600NHB CMA60MT1600NHB.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHR CMA60MT1600NHR.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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DSP8-12A DSP8-12A.pdf
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
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DSP8-12AS-TRL DSP8-12AS.pdf
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
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DSP8-12AS-TUB DSP8-12AS.pdf
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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IX4427N IX4426-27-28.pdf
IX4427N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
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IX4427MTR IX4426-27-28.pdf
IX4427MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IXBT16N170AHV IXBA16N170AHV.pdf
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
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IXBT16N170A IXBH(T)16N170A.pdf
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
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IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 390mΩ
Gate charge: 197nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Pulsed drain current: 65A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXGP20N120A3 IXG_20N120A3.pdf
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Produkt ist nicht verfügbar
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IXGP20N120B3 IXGA(P)20N120B3.pdf
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
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IXYP20N120C3 IXYH(P)20N120C3_HV.pdf
IXYP20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IXYH40N120C3 IXYH40N120C3.pdf
IXYH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 175A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120A2 IXGH(T)40N120A2.pdf
IXGH40N120A2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120B2D1 IXGH40N120B2D1.pdf
IXGH40N120B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120C3 IXGH40N120C3.pdf
IXGH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120C3D1 IXGH40N120C3D1.pdf
IXGH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120A4 littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Pulsed collector current: 275A
Gate-emitter voltage: ±20V
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH40N120B3 IXYH40N120B3.pdf
IXYH40N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B3D1 IXYH40N120B3D1.pdf
IXYH40N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 136A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B4H1 PdfFile_145990.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 240A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH40N120C3D1 IXYH40N120C3D1.pdf
IXYH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Pulsed collector current: 230A
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYT40N120A4HV littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Pulsed collector current: 275A
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYT40N120A4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEI60-12A DSEI60-12A.pdf
DSEI60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
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IXFK48N50 IXFK48N50.pdf
IXFK48N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Produkt ist nicht verfügbar
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IX4340N IX4340.pdf
IX4340N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
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CPC1002NTR CPC1002N.pdf
CPC1002NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Type of relay: solid state
Max. operating current: 700mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 0.55Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IXFK102N30P IXFK102N30P.pdf
IXFK102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Power dissipation: 700W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
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FDA217 FDA217.pdf
FDA217
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
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IXDF602PI IXD_602.pdf
IXDF602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602PI IXD_602.pdf
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN604PI IXDD604PI.pdf IXD_604.pdf
IXDN604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
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IXDN609PI IXDD609CI.pdf
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI614PI IXDD614CI-DTE.pdf
IXDI614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXDI604PI IXDD604PI.pdf
IXDI604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDF604PI IXDD604PI.pdf
IXDF604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 317 Stücke:
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IXDD604PI IXDD604PI.pdf
IXDD604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI602PI IXD_602.pdf
IXDI602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 878 Stücke:
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IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 18 Stücke:
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IXKC19N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Gate charge: 70nC
Produkt ist nicht verfügbar
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