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MXHV9910BTR MXHV9910BTR IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFP60N25X3 IXFP60N25X3 IXYS IXFA(P,Q)60N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 250 Stücke:
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8+9.38 EUR
9+8.51 EUR
11+6.98 EUR
50+6.55 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS IXFP60N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 20 Stücke:
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8+9.45 EUR
9+8.58 EUR
11+7.04 EUR
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CPC1965G CPC1965G IXYS CPC1965G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Relay variant: 1-phase
Switched voltage: max. 260V AC
auf Bestellung 225 Stücke:
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16+4.48 EUR
18+4 EUR
25+3.68 EUR
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IXTA76P10T IXTA76P10T IXYS IXT_76P10T_HV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
Mounting: SMD
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 197nC
On-state resistance: 25mΩ
Reverse recovery time: 70ns
Kind of package: tube
auf Bestellung 137 Stücke:
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10+7.58 EUR
11+6.72 EUR
12+6.03 EUR
25+5 EUR
50+4.69 EUR
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IXTA76N25T IXTA76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 92nC
On-state resistance: 44mΩ
Reverse recovery time: 148ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTA76P10T-TRL IXYS littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXBA14N300HV IXYS littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: tube
Type of transistor: IGBT
Gate charge: 62nC
Collector current: 38A
Power dissipation: 200W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IXFN56N90P IXFN56N90P IXYS IXFN56N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXBT14N300HV IXYS littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Type of transistor: IGBT
Case: TO268HV
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
Collector-emitter voltage: 3kV
Kind of package: tube
Produkt ist nicht verfügbar
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MCC132-12io1 MCC132-12io1 IXYS L079.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 5.08kA
Kind of package: bulk
Semiconductor structure: double series
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2+70.64 EUR
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MCC132-08io1 MCC132-08io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16io1 IXYS MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-14io1 IXYS MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-18io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-18IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-14IO1B IXYS MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 300 Stücke:
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7+11.38 EUR
10+9.42 EUR
30+7.99 EUR
Mindestbestellmenge: 7
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CMA80MT1600NHB IXYS CMA80MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB IXYS CMA60MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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DSP8-12A DSP8-12A IXYS DSP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 350 Stücke:
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21+3.45 EUR
25+2.92 EUR
29+2.53 EUR
36+1.99 EUR
50+1.87 EUR
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
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17+4.33 EUR
20+3.73 EUR
22+3.4 EUR
25+2.97 EUR
100+2.73 EUR
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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IX4427N IX4427N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 557 Stücke:
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66+1.09 EUR
93+0.78 EUR
101+0.71 EUR
104+0.69 EUR
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IX4427NTR IX4427NTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 1910 Stücke:
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49+1.49 EUR
71+1.02 EUR
84+0.86 EUR
98+0.73 EUR
105+0.68 EUR
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IX4427MTR IX4427MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 2212 Stücke:
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58+1.24 EUR
80+0.9 EUR
90+0.8 EUR
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IXGH16N170 IXGH16N170 IXYS IXGH16N170-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
auf Bestellung 298 Stücke:
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7+11.17 EUR
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IXGH16N170A IXGH16N170A IXYS IXGH(t)16N170A_H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXBT16N170AHV IXBT16N170AHV IXYS IXBA16N170AHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Case: TO268HV
Kind of package: tube
Mounting: SMD
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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5+15.67 EUR
10+14.07 EUR
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IXBT16N170A IXBT16N170A IXYS IXBH(T)16N170A.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Case: TO268
Kind of package: tube
Mounting: SMD
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 8 Stücke:
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5+15.67 EUR
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IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
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3+45.82 EUR
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IXGP20N120A3 IXGP20N120A3 IXYS IXG_20N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Turn-off time: 1.53µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
auf Bestellung 12 Stücke:
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9+7.98 EUR
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IXGP20N120B3 IXGP20N120B3 IXYS IXGA(P)20N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 720ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
auf Bestellung 37 Stücke:
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IXYP20N120C3 IXYP20N120C3 IXYS IXYH(P)20N120C3_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 200ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Produkt ist nicht verfügbar
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IXYH40N120C3 IXYH40N120C3 IXYS IXYH40N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 175A
Produkt ist nicht verfügbar
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IXGH40N120A2 IXGH40N120A2 IXYS IXGH(T)40N120A2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IXGH40N120B2D1 IXGH40N120B2D1 IXYS IXGH40N120B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXGH40N120C3 IXGH40N120C3 IXYS IXGH40N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS IXGH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Produkt ist nicht verfügbar
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IXYH40N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 275A
Produkt ist nicht verfügbar
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IXYH40N120B3 IXYH40N120B3 IXYS IXYH40N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS IXYH40N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Produkt ist nicht verfügbar
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IXYH40N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 136A
Pulsed collector current: 250A
Produkt ist nicht verfügbar
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IXYH40N120B4H1 IXYS PdfFile_145990.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 240A
Produkt ist nicht verfügbar
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IXYH40N120C3D1 IXYH40N120C3D1 IXYS IXYH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IXYH40N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 230A
Produkt ist nicht verfügbar
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IXYH40N120C4H1 IXYS ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 230A
Produkt ist nicht verfügbar
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IXYT40N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 140A
Pulsed collector current: 275A
Produkt ist nicht verfügbar
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IXYT40N120A4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Collector current: 140A
Produkt ist nicht verfügbar
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DSEI60-12A DSEI60-12A IXYS DSEI60-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 55 Stücke:
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10+7.74 EUR
11+7.08 EUR
Mindestbestellmenge: 10
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IXFK48N50 IXFK48N50 IXYS IXFK48N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA200N055T2 IXTA200N055T2 IXYS IXTA(P)200N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH10N100D2 IXTH10N100D2 IXYS IXTH(T)10N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D IXTT10N100D IXYS IXTH(T)10N100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTT10N100D2 IXTT10N100D2 IXYS IXTH(T)10N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
auf Bestellung 32 Stücke:
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10+7.28 EUR
11+6.55 EUR
13+5.79 EUR
30+5.31 EUR
Mindestbestellmenge: 10
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DMA50P1200HR DMA50P1200HR IXYS DMA50P1200HR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. forward impulse current: 555A
Kind of package: tube
Power dissipation: 210W
auf Bestellung 42 Stücke:
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6+13.13 EUR
7+11.83 EUR
10+10.45 EUR
30+9.58 EUR
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MCMA50P1200TA MCMA50P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
auf Bestellung 24 Stücke:
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3+27.71 EUR
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MXHV9910BTR MXHV9910.pdf
MXHV9910BTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFP60N25X3 IXFA(P,Q)60N25X3.pdf
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 250 Stücke:
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Anzahl Preis
8+9.38 EUR
9+8.51 EUR
11+6.98 EUR
50+6.55 EUR
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IXFP60N25X3M IXFP60N25X3M.pdf
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 20 Stücke:
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Anzahl Preis
8+9.45 EUR
9+8.58 EUR
11+7.04 EUR
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CPC1965G CPC1965G.pdf
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Relay variant: 1-phase
Switched voltage: max. 260V AC
auf Bestellung 225 Stücke:
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Anzahl Preis
16+4.48 EUR
18+4 EUR
25+3.68 EUR
Mindestbestellmenge: 16
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IXTA76P10T IXT_76P10T_HV.pdf
IXTA76P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
Mounting: SMD
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 197nC
On-state resistance: 25mΩ
Reverse recovery time: 70ns
Kind of package: tube
auf Bestellung 137 Stücke:
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Anzahl Preis
10+7.58 EUR
11+6.72 EUR
12+6.03 EUR
25+5 EUR
50+4.69 EUR
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IXTA76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTA76N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 92nC
On-state resistance: 44mΩ
Reverse recovery time: 148ns
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
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IXTA76P10T-TRL littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXBA14N300HV littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: tube
Type of transistor: IGBT
Gate charge: 62nC
Collector current: 38A
Power dissipation: 200W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IXFN56N90P IXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXBT14N300HV littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Type of transistor: IGBT
Case: TO268HV
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
Collector-emitter voltage: 3kV
Kind of package: tube
Produkt ist nicht verfügbar
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MCC132-12io1 L079.pdf PCN241015_Y4-M6 screw.pdf
MCC132-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 5.08kA
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 3 Stücke:
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Anzahl Preis
2+70.64 EUR
Mindestbestellmenge: 2
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MCC132-08io1 PCN241015_Y4-M6 screw.pdf
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.03 EUR
Mindestbestellmenge: 2
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MCC132-16io1 MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-14io1 MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-18io1 PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-18IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-14IO1B MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-16IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.38 EUR
10+9.42 EUR
30+7.99 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CMA80MT1600NHB CMA80MT1600NHB.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB CMA60MT1600NHB.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA60MT1600NHR CMA60MT1600NHR.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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DSP8-12A DSP8-12A.pdf
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
25+2.92 EUR
29+2.53 EUR
36+1.99 EUR
50+1.87 EUR
Mindestbestellmenge: 21
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DSP8-12AS-TRL DSP8-12AS.pdf
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
20+3.73 EUR
22+3.4 EUR
25+2.97 EUR
100+2.73 EUR
Mindestbestellmenge: 17
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DSP8-12AS-TUB DSP8-12AS.pdf
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Produkt ist nicht verfügbar
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IX4427N IX4426-27-28.pdf
IX4427N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
93+0.78 EUR
101+0.71 EUR
104+0.69 EUR
Mindestbestellmenge: 66
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IX4427NTR IX4426-27-28.pdf
IX4427NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
71+1.02 EUR
84+0.86 EUR
98+0.73 EUR
105+0.68 EUR
Mindestbestellmenge: 49
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IX4427MTR IX4426-27-28.pdf
IX4427MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 2212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
80+0.9 EUR
90+0.8 EUR
Mindestbestellmenge: 58
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IXGH16N170 IXGH16N170-DTE.pdf
IXGH16N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.81 EUR
7+11.17 EUR
10+10.27 EUR
30+10.24 EUR
Mindestbestellmenge: 6
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IXGH16N170A IXGH(t)16N170A_H1.pdf
IXGH16N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXBT16N170AHV IXBA16N170AHV.pdf
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Case: TO268HV
Kind of package: tube
Mounting: SMD
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
10+14.07 EUR
Mindestbestellmenge: 5
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IXBT16N170A IXBH(T)16N170A.pdf
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Case: TO268
Kind of package: tube
Mounting: SMD
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
Mindestbestellmenge: 5
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IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+51.91 EUR
3+45.82 EUR
Mindestbestellmenge: 2
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IXGP20N120A3 IXG_20N120A3.pdf
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Kind of package: tube
Turn-off time: 1.53µs
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Turn-on time: 66ns
Gate charge: 50nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.98 EUR
Mindestbestellmenge: 9
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IXGP20N120B3 IXGA(P)20N120B3.pdf
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 720ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Turn-on time: 61ns
Gate charge: 51nC
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
Mindestbestellmenge: 8
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IXYP20N120C3 IXYH(P)20N120C3_HV.pdf
IXYP20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Kind of package: tube
Turn-off time: 200ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Collector-emitter voltage: 1.2kV
Turn-on time: 60ns
Gate charge: 53nC
Produkt ist nicht verfügbar
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IXYH40N120C3 IXYH40N120C3.pdf
IXYH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 175A
Produkt ist nicht verfügbar
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IXGH40N120A2 IXGH(T)40N120A2.pdf
IXGH40N120A2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IXGH40N120B2D1 IXGH40N120B2D1.pdf
IXGH40N120B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXGH40N120C3 IXGH40N120C3.pdf
IXGH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXGH40N120C3D1 IXGH40N120C3D1.pdf
IXGH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Produkt ist nicht verfügbar
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IXYH40N120A4 littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 275A
Produkt ist nicht verfügbar
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IXYH40N120B3 IXYH40N120B3.pdf
IXYH40N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXYH40N120B3D1 IXYH40N120B3D1.pdf
IXYH40N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Produkt ist nicht verfügbar
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IXYH40N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 136A
Pulsed collector current: 250A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH40N120B4H1 PdfFile_145990.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 240A
Produkt ist nicht verfügbar
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IXYH40N120C3D1 IXYH40N120C3D1.pdf
IXYH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IXYH40N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 230A
Produkt ist nicht verfügbar
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IXYH40N120C4H1 ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 230A
Produkt ist nicht verfügbar
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IXYT40N120A4HV littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 140A
Pulsed collector current: 275A
Produkt ist nicht verfügbar
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IXYT40N120A4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Collector current: 140A
Produkt ist nicht verfügbar
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DSEI60-12A DSEI60-12A.pdf
DSEI60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.74 EUR
11+7.08 EUR
Mindestbestellmenge: 10
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IXFK48N50 IXFK48N50.pdf
IXFK48N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA200N055T2 IXTA(P)200N055T2.pdf
IXTA200N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH10N100D2 IXTH(T)10N100D2.pdf
IXTH10N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D IXTH(T)10N100D.pdf
IXTT10N100D
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTT10N100D2 IXTH(T)10N100D2.pdf
IXTT10N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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DMA50P1200HB
DMA50P1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
13+5.79 EUR
30+5.31 EUR
Mindestbestellmenge: 10
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DMA50P1200HR DMA50P1200HR.pdf
DMA50P1200HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. forward impulse current: 555A
Kind of package: tube
Power dissipation: 210W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.13 EUR
7+11.83 EUR
10+10.45 EUR
30+9.58 EUR
Mindestbestellmenge: 6
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MCMA50P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA50P1200TA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.71 EUR
Mindestbestellmenge: 3
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