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IXFN210N30X3 IXYS IXFN210N30X3 Transistor modules MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
30+50.05 EUR
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IXFN220N20X3 IXFN220N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A88A74D1A18BF&compId=IXFN220N20X3.pdf?ci_sign=dca2a6ff4e3c80e41699692c4799b3d0cdfcd691 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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1+71.5 EUR
2+36.82 EUR
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IXFN230N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn230n20t_datasheet.pdf.pdf IXFN230N20T Transistor modules MOSFET
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IXFN240N15T2 IXFN240N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF632B0BFD4D820&compId=IXFN240N15T2.pdf?ci_sign=ff1aa251ad84ebead4a899a8d1f4d4e5b551871d Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 460nC
Reverse recovery time: 140ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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1+71.5 EUR
2+35.75 EUR
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IXFN240N25X3 IXYS IXFN240N25X3 Transistor modules MOSFET
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IXFN24N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn24n100_datasheet.pdf.pdf description IXFN24N100 Transistor modules MOSFET
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IXFN26N100P IXFN26N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7491E14C33820&compId=IXFN26N100P.pdf?ci_sign=bdfeb01acf554089de2652a27d870b4b6759604a Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
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2+38.08 EUR
3+38.07 EUR
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IXFN26N120P IXFN26N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 255nC
Reverse recovery time: 300ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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2+39.27 EUR
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IXFN27N120SK IXFN27N120SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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IXFN300N10P IXYS DS100016AIXFN300N10P.pdf IXFN300N10P Transistor modules MOSFET
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IXFN300N20X3 IXYS IXFN300N20X3 Transistor modules MOSFET
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IXFN30N120P IXFN30N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN320N17T2 IXYS DS100189(IXFN320N17T2).pdf IXFN320N17T2 Transistor modules MOSFET
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IXFN32N100P IXFN32N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN32N100Q3 IXFN32N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN32N120P IXFN32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83FC27C19F820&compId=IXFN32N120P.pdf?ci_sign=21e350967878f792e5cbabfa7c9da6eeff737a7c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN32N80P IXYS IXFN32N80P.pdf IXFN32N80P Transistor modules MOSFET
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IXFN340N07 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn340n07_datasheet.pdf.pdf IXFN340N07 Transistor modules MOSFET
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IXFN360N10T IXFN360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 525nC
Reverse recovery time: 130ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
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3+27.96 EUR
5+27.71 EUR
10+26.88 EUR
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IXFN360N15T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn360n15t2_datasheet.pdf.pdf IXFN360N15T2 Transistor modules MOSFET
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IXFN36N100 IXFN36N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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1+88.87 EUR
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IXFN38N100P IXYS IXFN38N100P Transistor modules MOSFET
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IXFN400N15X3 IXFN400N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8C41411F51820&compId=IXFN400N15X3.pdf?ci_sign=13beb68d32a85f3cbcfc07159506072e1f87ebdc Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 365nC
Reverse recovery time: 132ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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2+52.51 EUR
5+51.42 EUR
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IXFN40N110P IXFN40N110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA812D6D7BDF820&compId=IXFN40N110P.pdf?ci_sign=6226376dd3ad6996a210b08f7f2500c2f3b3461c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IXFN40N110Q3 IXFN40N110Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA817BC850F1820&compId=IXFN40N110Q3.pdf?ci_sign=2c2fccbdd7e7ae4e20d8d950b06dc1a068f013a8 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 300nC
Reverse recovery time: 434ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IXFN40N90P IXYS DS100062AIXFN40N90P.pdf IXFN40N90P Transistor modules MOSFET
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IXFN420N10T IXFN420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN44N100P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n100p_datasheet.pdf.pdf IXFN44N100P Transistor modules MOSFET
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IXFN44N100Q3 IXFN44N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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1+71.53 EUR
300+68.78 EUR
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IXFN44N80P IXFN44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 200nC
Reverse recovery time: 250ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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2+37.29 EUR
3+35.26 EUR
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IXFN44N80Q3 IXFN44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN48N60P IXFN48N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9735B5A4BF820&compId=IXFN48N60P.pdf?ci_sign=3767de0c252b66993db8e840b8859a54ca75ee30 description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Pulsed drain current: 110A
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
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IXFN50N120SIC IXYS media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet IXFN50N120SIC Transistor modules MOSFET
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Gate charge: 115nC
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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1+90.88 EUR
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IXFN520N075T2 IXFN520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C436477B578BF&compId=IXFN520N075T2.pdf?ci_sign=da0994bc8236c5e5fae595d8fdc5eb075706d345 Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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IXFN52N100X IXFN52N100X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN52N90P IXFN52N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA73091FE0E9820&compId=IXFN52N90P.pdf?ci_sign=c876402e11ac92f3ff5099168a1ab66cd6829552 Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
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IXFN56N90P IXFN56N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA736A212647820&compId=IXFN56N90P.pdf?ci_sign=1704c2b3eb20115a665fadc521e3f11698690767 Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN60N80P IXFN60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F24B9F9CDFB820&compId=IXFN60N80P.pdf?ci_sign=559fd8e3a46ccaf185911c21319f68de98543251 description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 250nC
Reverse recovery time: 250ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 244 Stücke:
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2+47.43 EUR
5+45.62 EUR
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IXFN62N80Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn62n80q3_datasheet.pdf.pdf IXFN62N80Q3 Transistor modules MOSFET
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IXFN64N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8 description IXFN64N50P Transistor modules MOSFET
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IXFN64N60P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn64n60p_datasheet.pdf.pdf description IXFN64N60P Transistor modules MOSFET
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IXFN66N85X IXFN66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA70A95430AF820&compId=IXFN66N85X.pdf?ci_sign=2d203018ce9c13744ae92c3349badbac31ecd4da Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
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2+46.48 EUR
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IXFN80N50 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50_datasheet.pdf.pdf description IXFN80N50 Transistor modules MOSFET
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IXFN80N50P IXYS media?resourcetype=datasheets&itemid=0b471f88-2d6e-442f-90e8-b1ac1356d3ae&filename=littelfuse-discrete-mosfets-n-channel-hiperfets-ixfn80n50p-datasheet IXFN80N50P Transistor modules MOSFET
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IXFN80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q3_datasheet.pdf.pdf IXFN80N50Q3 Transistor modules MOSFET
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IXFN80N60P3 IXFN80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Electrical mounting: screw
Reverse recovery time: 250ns
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
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IXFN82N60P IXYS description IXFN82N60P Transistor modules MOSFET
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IXFN82N60Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn82n60q3_datasheet.pdf.pdf IXFN82N60Q3 Transistor modules MOSFET
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IXFN90N170SK IXFN90N170SK IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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IXFN90N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn90n85x_datasheet.pdf.pdf IXFN90N85X Transistor modules MOSFET
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IXFN94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn94n50p2_datasheet.pdf.pdf IXFN94N50P2 Transistor modules MOSFET
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IXFP102N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_102n15t_datasheet.pdf.pdf IXFP102N15T THT N channel transistors
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IXFP10N60P IXFP10N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.49 EUR
23+3.13 EUR
27+2.73 EUR
28+2.59 EUR
50+2.5 EUR
Mindestbestellmenge: 21
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IXFP10N80P IXFP10N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
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IXFP110N15T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf IXFP110N15T2 THT N channel transistors
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IXFP12N50P IXFP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
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IXFP12N65X2 IXFP12N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
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15+5.03 EUR
25+2.96 EUR
26+2.8 EUR
100+2.7 EUR
Mindestbestellmenge: 15
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IXFP12N65X2M IXFP12N65X2M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 300 Stücke
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IXFP130N10T2 IXFP130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
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16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
21+3.45 EUR
50+3.32 EUR
Mindestbestellmenge: 16
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IXFN210N30X3
Hersteller: IXYS
IXFN210N30X3 Transistor modules MOSFET
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.5 EUR
30+50.05 EUR
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IXFN220N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A88A74D1A18BF&compId=IXFN220N20X3.pdf?ci_sign=dca2a6ff4e3c80e41699692c4799b3d0cdfcd691 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFN220N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 204nC
Reverse recovery time: 128ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Anzahl Preis
1+71.5 EUR
2+36.82 EUR
30+35.39 EUR
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IXFN230N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn230n20t_datasheet.pdf.pdf
Hersteller: IXYS
IXFN230N20T Transistor modules MOSFET
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IXFN240N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF632B0BFD4D820&compId=IXFN240N15T2.pdf?ci_sign=ff1aa251ad84ebead4a899a8d1f4d4e5b551871d
IXFN240N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 460nC
Reverse recovery time: 140ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Anzahl Preis
1+71.5 EUR
2+35.75 EUR
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IXFN240N25X3
Hersteller: IXYS
IXFN240N25X3 Transistor modules MOSFET
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IXFN24N100 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn24n100_datasheet.pdf.pdf
Hersteller: IXYS
IXFN24N100 Transistor modules MOSFET
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IXFN26N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7491E14C33820&compId=IXFN26N100P.pdf?ci_sign=bdfeb01acf554089de2652a27d870b4b6759604a
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 197nC
Reverse recovery time: 300ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Anzahl Preis
2+38.08 EUR
3+38.07 EUR
Mindestbestellmenge: 2
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IXFN26N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c
IXFN26N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 255nC
Reverse recovery time: 300ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
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Anzahl Preis
2+39.27 EUR
Mindestbestellmenge: 2
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IXFN27N120SK
IXFN27N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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IXFN300N10P DS100016AIXFN300N10P.pdf
Hersteller: IXYS
IXFN300N10P Transistor modules MOSFET
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IXFN300N20X3
Hersteller: IXYS
IXFN300N20X3 Transistor modules MOSFET
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IXFN30N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA839D0576CD820&compId=IXFN30N120P.pdf?ci_sign=3c2a02af2466d777f644912c92670b8e0f9fb4b3
IXFN30N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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IXFN320N17T2 DS100189(IXFN320N17T2).pdf
Hersteller: IXYS
IXFN320N17T2 Transistor modules MOSFET
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IXFN32N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA74E5CF81FB820&compId=IXFN32N100P.pdf?ci_sign=c6d0cb810ecde8e0355671243a182c74de859f98
IXFN32N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN32N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7571BA8393820&compId=IXFN32N100Q3.pdf?ci_sign=fd58e0d88c30b499af20f812a74ae8d4f3224225
IXFN32N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83FC27C19F820&compId=IXFN32N120P.pdf?ci_sign=21e350967878f792e5cbabfa7c9da6eeff737a7c
IXFN32N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN32N80P IXFN32N80P.pdf
Hersteller: IXYS
IXFN32N80P Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN340N07 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn340n07_datasheet.pdf.pdf
Hersteller: IXYS
IXFN340N07 Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN360N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C5891EC71D8BF&compId=IXFN360N10T.pdf?ci_sign=f49be72713bf6a9d89a1f56881e5f6829ccb1185
IXFN360N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 525nC
Reverse recovery time: 130ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+27.96 EUR
5+27.71 EUR
10+26.88 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFN360N15T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn360n15t2_datasheet.pdf.pdf
Hersteller: IXYS
IXFN360N15T2 Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN36N100 description pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004
IXFN36N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+88.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN38N100P
Hersteller: IXYS
IXFN38N100P Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN400N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8C41411F51820&compId=IXFN400N15X3.pdf?ci_sign=13beb68d32a85f3cbcfc07159506072e1f87ebdc
IXFN400N15X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 365nC
Reverse recovery time: 132ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+52.51 EUR
5+51.42 EUR
Mindestbestellmenge: 2
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IXFN40N110P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA812D6D7BDF820&compId=IXFN40N110P.pdf?ci_sign=6226376dd3ad6996a210b08f7f2500c2f3b3461c
IXFN40N110P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFN40N110Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA817BC850F1820&compId=IXFN40N110Q3.pdf?ci_sign=2c2fccbdd7e7ae4e20d8d950b06dc1a068f013a8
IXFN40N110Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 300nC
Reverse recovery time: 434ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN40N90P DS100062AIXFN40N90P.pdf
Hersteller: IXYS
IXFN40N90P Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN420N10T pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3
IXFN420N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN44N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n100p_datasheet.pdf.pdf
Hersteller: IXYS
IXFN44N100P Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN44N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA77628F9891820&compId=IXFN44N100Q3.pdf?ci_sign=50013891e5e63e84eaa5c1c71ffceb0e2e5badb1
IXFN44N100Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.53 EUR
300+68.78 EUR
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IXFN44N80P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C9A3C8EBA98BF&compId=IXFN44N80P.pdf?ci_sign=e5454b9129ad828efae0eebe210c810d51dfce0d
IXFN44N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 200nC
Reverse recovery time: 250ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+37.29 EUR
3+35.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62
IXFN44N80Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN48N60P description pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9735B5A4BF820&compId=IXFN48N60P.pdf?ci_sign=3767de0c252b66993db8e840b8859a54ca75ee30
IXFN48N60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Pulsed drain current: 110A
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN50N120SIC media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet
Hersteller: IXYS
IXFN50N120SIC Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Gate charge: 115nC
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+90.88 EUR
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IXFN520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C436477B578BF&compId=IXFN520N075T2.pdf?ci_sign=da0994bc8236c5e5fae595d8fdc5eb075706d345
IXFN520N075T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN52N100X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910
IXFN52N100X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN52N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA73091FE0E9820&compId=IXFN52N90P.pdf?ci_sign=c876402e11ac92f3ff5099168a1ab66cd6829552
IXFN52N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN56N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA736A212647820&compId=IXFN56N90P.pdf?ci_sign=1704c2b3eb20115a665fadc521e3f11698690767
IXFN56N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN60N80P description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F24B9F9CDFB820&compId=IXFN60N80P.pdf?ci_sign=559fd8e3a46ccaf185911c21319f68de98543251
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 250nC
Reverse recovery time: 250ns
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 244 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+47.43 EUR
5+45.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN62N80Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn62n80q3_datasheet.pdf.pdf
Hersteller: IXYS
IXFN62N80Q3 Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN64N50P description Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN64N50P-Datasheet.PDF?assetguid=C3F76E7E-02FB-4FB9-BB27-8D8D85DFFDE8
Hersteller: IXYS
IXFN64N50P Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN64N60P description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn64n60p_datasheet.pdf.pdf
Hersteller: IXYS
IXFN64N60P Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA70A95430AF820&compId=IXFN66N85X.pdf?ci_sign=2d203018ce9c13744ae92c3349badbac31ecd4da
IXFN66N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+46.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN80N50 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50_datasheet.pdf.pdf
Hersteller: IXYS
IXFN80N50 Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN80N50P media?resourcetype=datasheets&itemid=0b471f88-2d6e-442f-90e8-b1ac1356d3ae&filename=littelfuse-discrete-mosfets-n-channel-hiperfets-ixfn80n50p-datasheet
Hersteller: IXYS
IXFN80N50P Transistor modules MOSFET
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IXFN80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q3_datasheet.pdf.pdf
Hersteller: IXYS
IXFN80N50Q3 Transistor modules MOSFET
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IXFN80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f
IXFN80N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Electrical mounting: screw
Reverse recovery time: 250ns
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
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IXFN82N60P description
Hersteller: IXYS
IXFN82N60P Transistor modules MOSFET
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IXFN82N60Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn82n60q3_datasheet.pdf.pdf
Hersteller: IXYS
IXFN82N60Q3 Transistor modules MOSFET
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IXFN90N170SK media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf
IXFN90N170SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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IXFN90N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn90n85x_datasheet.pdf.pdf
Hersteller: IXYS
IXFN90N85X Transistor modules MOSFET
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IXFN94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn94n50p2_datasheet.pdf.pdf
Hersteller: IXYS
IXFN94N50P2 Transistor modules MOSFET
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IXFP102N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_102n15t_datasheet.pdf.pdf
Hersteller: IXYS
IXFP102N15T THT N channel transistors
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IXFP10N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3172A28B93820&compId=IXFA(P)10N60P.pdf?ci_sign=de7479bbe4bb559868fc81e62408fc15628ae2c2
IXFP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.49 EUR
23+3.13 EUR
27+2.73 EUR
28+2.59 EUR
50+2.5 EUR
Mindestbestellmenge: 21
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IXFP10N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3202DD9D8B820&compId=IXFA(H%2CP%2CQ)10N80P.pdf?ci_sign=74d432002548a9e884f59b77ee568fc4a0192e9f
IXFP10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
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IXFP110N15T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
Hersteller: IXYS
IXFP110N15T2 THT N channel transistors
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IXFP12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
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IXFP12N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99097C8FFDBA138BF&compId=IXF_12N65X2.pdf?ci_sign=ce18cc3b712789b5603f50a0d9269fb42c4ab943
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.03 EUR
25+2.96 EUR
26+2.8 EUR
100+2.7 EUR
Mindestbestellmenge: 15
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IXFP12N65X2M pVersion=0046&contRep=ZT&docId=005056AB82531EE99097D0E76B22B8BF&compId=IXFP12N65X2M.pdf?ci_sign=4004da86a326be7c04a430838db3746583c9ea73
IXFP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 300 Stücke
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IXFP130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFP130N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
21+3.45 EUR
50+3.32 EUR
Mindestbestellmenge: 16
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