Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN56N90P | IXYS |
![]() Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Pulsed drain current: 168A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN60N80P | IXYS |
![]() ![]() Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 53A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.14Ω Pulsed drain current: 150A Power dissipation: 1.04kW Technology: HiPerFET™; Polar™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 250nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 257 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN62N80Q3 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFN64N50P | IXYS |
![]() ![]() Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN64N60P | IXYS |
![]() ![]() Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 96mΩ Pulsed drain current: 150A Power dissipation: 700W Kind of channel: enhancement Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 200nC Technology: HiPerFET™; PolarHV™ Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN66N85X | IXYS |
![]() Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 65A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 140A Power dissipation: 830W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 230nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN80N50 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXFN80N50P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXFN80N50Q3 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFN80N60P3 | IXYS |
![]() Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Pulsed drain current: 200A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFN82N60P | IXYS |
![]() ![]() Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 72A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 75mΩ Gate charge: 240nC Kind of channel: enhancement Reverse recovery time: 200ns Pulsed drain current: 200A Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFN82N60Q3 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFN90N170SK | IXYS |
![]() Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 67A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 23mΩ Technology: SiC Kind of channel: enhancement Gate charge: 376nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFN90N85X | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFN94N50P2 | IXYS |
![]() Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar2™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFP102N15T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFP10N60P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP10N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFP110N15T2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFP12N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 29nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP12N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 238 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP12N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP130N10T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Drain-source voltage: 100V Drain current: 130A Case: TO220AB Polarisation: unipolar On-state resistance: 10.1mΩ Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 130nC Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP130N15X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFP14N60P | IXYS |
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auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP14N85X | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXFP14N85XM | IXYS |
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auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP16N50P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFP16N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB Mounting: THT Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 16A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; Polar3™ Kind of channel: enhancement Gate-source voltage: ±30V Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 225 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP16N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO220AB On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP180N10T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 227 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP18N60X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO220AB On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP18N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 135ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP18N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 135ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP20N50P3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 58W Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 36nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP20N85X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO220AB On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Gate charge: 63nC Reverse recovery time: 190ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP220N06T3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP22N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO220AB On-state resistance: 390mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 159 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP22N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP22N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 37W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Technology: HiPerFET™; X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 278 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP230N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO220AB On-state resistance: 4.2mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP24N60X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO220AB On-state resistance: 0.175Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFP26N30X3 | IXYS |
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auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP26N50P3 | IXYS |
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auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP270N06T3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; TrenchT3™ Reverse recovery time: 47ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFP30N25X3 | IXYS |
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auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP30N25X3M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 36W Case: TO220FP On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP30N60X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO220AB On-state resistance: 155mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 500W Features of semiconductor devices: ultra junction x-class Gate charge: 56nC Reverse recovery time: 145ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP34N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP34N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X2-Class Reverse recovery time: 164ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP34N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X3-Class Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP36N20X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB Reverse recovery time: 75ns Drain-source voltage: 200V Drain current: 36A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 176W Polarisation: unipolar Kind of package: tube Gate charge: 21nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP36N20X3M | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXFP36N30P3 | IXYS |
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auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP36N60X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Mounting: THT Reverse recovery time: 180ns Drain-source voltage: 600V Drain current: 36A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: TO220AB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXFP38N30X3 | IXYS |
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auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP38N30X3M | IXYS |
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auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP3N120 | IXYS |
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Produkt ist nicht verfügbar |
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IXFP44N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: THT Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO220AB Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXFN56N90P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN60N80P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 257 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 47.43 EUR |
10+ | 45.62 EUR |
IXFN62N80Q3 |
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Hersteller: IXYS
IXFN62N80Q3 Transistor modules MOSFET
IXFN62N80Q3 Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN64N50P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN64N60P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 96mΩ
Pulsed drain current: 150A
Power dissipation: 700W
Kind of channel: enhancement
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 200nC
Technology: HiPerFET™; PolarHV™
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 96mΩ
Pulsed drain current: 150A
Power dissipation: 700W
Kind of channel: enhancement
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 200nC
Technology: HiPerFET™; PolarHV™
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN66N85X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 230nC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 230nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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2+ | 46.40 EUR |
IXFN80N50 | ![]() |
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Hersteller: IXYS
IXFN80N50 Transistor modules MOSFET
IXFN80N50 Transistor modules MOSFET
Produkt ist nicht verfügbar
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IXFN80N50P |
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Hersteller: IXYS
IXFN80N50P Transistor modules MOSFET
IXFN80N50P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN80N50Q3 |
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Hersteller: IXYS
IXFN80N50Q3 Transistor modules MOSFET
IXFN80N50Q3 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN80N60P3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN82N60P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 72A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 75mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 200A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 72A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 75mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 200A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN82N60Q3 |
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Hersteller: IXYS
IXFN82N60Q3 Transistor modules MOSFET
IXFN82N60Q3 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN90N170SK |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFN90N85X |
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Hersteller: IXYS
IXFN90N85X Transistor modules MOSFET
IXFN90N85X Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN94N50P2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFP102N15T |
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Hersteller: IXYS
IXFP102N15T THT N channel transistors
IXFP102N15T THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFP10N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.49 EUR |
23+ | 3.13 EUR |
27+ | 2.73 EUR |
28+ | 2.57 EUR |
50+ | 2.50 EUR |
IXFP10N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP110N15T2 |
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Hersteller: IXYS
IXFP110N15T2 THT N channel transistors
IXFP110N15T2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 29nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 29nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP12N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.26 EUR |
25+ | 2.97 EUR |
26+ | 2.82 EUR |
100+ | 2.77 EUR |
250+ | 2.70 EUR |
IXFP12N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 300 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
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IXFP130N10T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Drain-source voltage: 100V
Drain current: 130A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 10.1mΩ
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 130nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Drain-source voltage: 100V
Drain current: 130A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 10.1mΩ
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 130nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.33 EUR |
15+ | 4.79 EUR |
19+ | 3.93 EUR |
20+ | 3.72 EUR |
IXFP130N15X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Anzahl je Verpackung: 300 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 80ns
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 9mΩ
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
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IXFP14N60P |
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Hersteller: IXYS
IXFP14N60P THT N channel transistors
IXFP14N60P THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
5+ | 14.30 EUR |
13+ | 5.51 EUR |
1000+ | 3.40 EUR |
IXFP14N85X |
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Hersteller: IXYS
IXFP14N85X THT N channel transistors
IXFP14N85X THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP14N85XM |
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Hersteller: IXYS
IXFP14N85XM THT N channel transistors
IXFP14N85XM THT N channel transistors
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.51 EUR |
15+ | 4.83 EUR |
IXFP16N50P |
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Hersteller: IXYS
IXFP16N50P THT N channel transistors
IXFP16N50P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP16N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Mounting: THT
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Mounting: THT
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 225 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.11 EUR |
18+ | 4.10 EUR |
19+ | 3.88 EUR |
500+ | 3.73 EUR |
IXFP16N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.92 EUR |
18+ | 4.06 EUR |
19+ | 3.83 EUR |
500+ | 3.72 EUR |
IXFP180N10T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.81 EUR |
12+ | 6.02 EUR |
14+ | 5.12 EUR |
50+ | 5.03 EUR |
IXFP18N60X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
IXFP18N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP18N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP20N50P3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP20N85X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
IXFP220N06T3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.21 EUR |
10+ | 7.15 EUR |
14+ | 5.11 EUR |
50+ | 3.17 EUR |
IXFP22N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 159 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.58 EUR |
20+ | 3.70 EUR |
21+ | 3.50 EUR |
500+ | 3.36 EUR |
IXFP22N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.68 EUR |
17+ | 4.38 EUR |
18+ | 4.13 EUR |
100+ | 3.98 EUR |
IXFP22N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.23 EUR |
20+ | 3.62 EUR |
21+ | 3.42 EUR |
100+ | 3.33 EUR |
500+ | 3.29 EUR |
IXFP230N075T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP24N60X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP26N30X3 |
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Hersteller: IXYS
IXFP26N30X3 THT N channel transistors
IXFP26N30X3 THT N channel transistors
auf Bestellung 222 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.38 EUR |
21+ | 3.52 EUR |
22+ | 3.33 EUR |
50+ | 3.25 EUR |
IXFP26N50P3 |
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Hersteller: IXYS
IXFP26N50P3 THT N channel transistors
IXFP26N50P3 THT N channel transistors
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.01 EUR |
10+ | 7.25 EUR |
11+ | 6.85 EUR |
1000+ | 6.71 EUR |
IXFP26N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.33 EUR |
10+ | 7.15 EUR |
1000+ | 6.88 EUR |
IXFP270N06T3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP30N25X3 |
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Hersteller: IXYS
IXFP30N25X3 THT N channel transistors
IXFP30N25X3 THT N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.02 EUR |
14+ | 5.31 EUR |
15+ | 5.02 EUR |
IXFP30N25X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP30N60X |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP34N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP34N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP34N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP36N20X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Reverse recovery time: 75ns
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Gate charge: 21nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.26 EUR |
22+ | 3.37 EUR |
23+ | 3.19 EUR |
50+ | 3.17 EUR |
100+ | 3.07 EUR |
IXFP36N20X3M |
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Hersteller: IXYS
IXFP36N20X3M THT N channel transistors
IXFP36N20X3M THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP36N30P3 |
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Hersteller: IXYS
IXFP36N30P3 THT N channel transistors
IXFP36N30P3 THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
50+ | 3.62 EUR |
IXFP36N60X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP38N30X3 |
![]() |
Hersteller: IXYS
IXFP38N30X3 THT N channel transistors
IXFP38N30X3 THT N channel transistors
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.39 EUR |
17+ | 4.35 EUR |
18+ | 4.12 EUR |
IXFP38N30X3M |
![]() |
Hersteller: IXYS
IXFP38N30X3M THT N channel transistors
IXFP38N30X3M THT N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 7.09 EUR |
15+ | 4.82 EUR |
16+ | 4.56 EUR |
IXFP3N120 |
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Hersteller: IXYS
IXFP3N120 THT N channel transistors
IXFP3N120 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP44N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO220AB
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO220AB
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH