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IXFY8N65X2 IXFY8N65X2 IXYS IXF_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
auf Bestellung 93 Stücke:
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69+1.24 EUR
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IXTY8N65X2 IXTY8N65X2 IXYS IXT_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFA8N65X2 IXFA8N65X2 IXYS IXF_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
auf Bestellung 424 Stücke:
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74+1.15 EUR
77+1.11 EUR
81+1.06 EUR
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IXTH48N65X2 IXTH48N65X2 IXYS IXTH48N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
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7+12.9 EUR
10+11.66 EUR
30+9.96 EUR
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IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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7+14.04 EUR
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DK208DRP IXYS littelfuse_thyristor_dk208d_datasheet.pdf.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward impulse current: 180A
Kind of package: reel; tape
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IXTP160N04T2 IXTP160N04T2 IXYS IXTA(P)160N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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IXTA160N04T2 IXTA160N04T2 IXYS IXTA(P)160N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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CPC9909N CPC9909N IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 2mA
Mounting: SMD
Operating temperature: -55...85°C
Kind of package: tube
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
auf Bestellung 688 Stücke:
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35+2.46 EUR
39+2.21 EUR
42+2.05 EUR
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CPC9909NE CPC9909NE IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Mounting: SMD
Operating temperature: -55...85°C
Kind of package: tube
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
auf Bestellung 1016 Stücke:
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35+2.45 EUR
37+2.34 EUR
39+2.21 EUR
50+2.09 EUR
100+2.06 EUR
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CPC9909NETR CPC9909NETR IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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CPC9909NTR CPC9909NTR IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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MXHV9910B MXHV9910B IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
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MXHV9910BE IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
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MXHV9910BETR IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
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MXHV9910BTR MXHV9910BTR IXYS MXHV9910.pdf Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
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IXFP60N25X3 IXFP60N25X3 IXYS IXFA(P,Q)60N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 245 Stücke:
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8+11.16 EUR
9+10.13 EUR
11+8.31 EUR
50+7.79 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS IXFP60N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
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8+11.25 EUR
9+10.21 EUR
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CPC1965G CPC1965G IXYS CPC1965G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
auf Bestellung 469 Stücke:
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9+9.77 EUR
10+8.75 EUR
25+8.03 EUR
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IXTA76P10T IXTA76P10T IXYS IXT_76P10T_HV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 25mΩ
Reverse recovery time: 70ns
Gate charge: 197nC
Technology: TrenchP™
Kind of package: tube
auf Bestellung 137 Stücke:
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11+8.5 EUR
12+7.52 EUR
13+6.93 EUR
14+6.13 EUR
25+5.58 EUR
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IXTA76N25T IXTA76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 44mΩ
Reverse recovery time: 148ns
Gate charge: 92nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXTA76P10T-TRL IXTA76P10T-TRL IXYS littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
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IXFN56N90P IXFN56N90P IXYS IXFN56N90P.pdf Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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IXBT14N300HV IXYS littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
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MCC132-12io1 MCC132-12io1 IXYS L079.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
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MCC132-08io1 MCC132-08io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-16io1 IXYS MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
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MCC132-14io1 IXYS MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
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MCC132-18io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-18IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-14IO1B IXYS MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC132-16IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Case: ISO247™
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
auf Bestellung 260 Stücke:
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7+13.54 EUR
10+11.21 EUR
30+9.51 EUR
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CMA80MT1600NHB IXYS CMA80MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
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CMA60MT1600NHB IXYS CMA60MT1600NHB.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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DSP8-12A DSP8-12A IXYS DSP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 100W
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Kind of package: reel; tape
Power dissipation: 100W
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 100W
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IX4427N IX4427N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
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IX4427NTR IX4427NTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
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99+0.87 EUR
103+0.83 EUR
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IX4427MTR IX4427MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
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IXBT16N170AHV IXBT16N170AHV IXYS IXBA16N170AHV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
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IXBT16N170A IXBT16N170A IXYS IXBH(T)16N170A.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
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IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 390mΩ
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 65A
Type of semiconductor module: MOSFET transistor
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXGP20N120A3 IXGP20N120A3 IXYS IXG_20N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
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IXGP20N120B3 IXGP20N120B3 IXYS IXGA(P)20N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 80A
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IXYP20N120C3 IXYP20N120C3 IXYS IXYH(P)20N120C3_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
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IXYH40N120C3 IXYH40N120C3 IXYS IXYH40N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 175A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120A2 IXGH40N120A2 IXYS IXGH(T)40N120A2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120B2D1 IXGH40N120B2D1 IXYS IXGH40N120B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120C3 IXGH40N120C3 IXYS IXGH40N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS IXGH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Pulsed collector current: 275A
Gate-emitter voltage: ±20V
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B3 IXYH40N120B3 IXYS IXYH40N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS IXYH40N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 136A
Collector-emitter voltage: 1.2kV
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IXYH40N120B4H1 IXYS PdfFile_145990.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 240A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120C3D1 IXYH40N120C3D1 IXYS IXYH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
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IXYH40N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Pulsed collector current: 230A
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
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IXFY8N65X2 IXF_8N65X2.pdf
IXFY8N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
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IXTY8N65X2 IXT_8N65X2.pdf
IXTY8N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFA8N65X2 IXF_8N65X2.pdf
IXFA8N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
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IXTH48N65X2 IXTH48N65X2.pdf
IXTH48N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
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IXTQ48N65X2M
IXTQ48N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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6+15.57 EUR
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DK208DRP littelfuse_thyristor_dk208d_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward impulse current: 180A
Kind of package: reel; tape
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IXTP160N04T2 IXTA(P)160N04T2.pdf
IXTP160N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXTA160N04T2 IXTA(P)160N04T2.pdf
IXTA160N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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CPC9909N CPC9909.pdf
CPC9909N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 2mA
Mounting: SMD
Operating temperature: -55...85°C
Kind of package: tube
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
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30+2.88 EUR
35+2.46 EUR
39+2.21 EUR
42+2.05 EUR
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CPC9909NE CPC9909.pdf
CPC9909NE
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Mounting: SMD
Operating temperature: -55...85°C
Kind of package: tube
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
auf Bestellung 1016 Stücke:
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27+3.27 EUR
35+2.45 EUR
37+2.34 EUR
39+2.21 EUR
50+2.09 EUR
100+2.06 EUR
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CPC9909NETR CPC9909.pdf
CPC9909NETR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CPC9909NTR CPC9909.pdf
CPC9909NTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MXHV9910B MXHV9910.pdf
MXHV9910B
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Produkt ist nicht verfügbar
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MXHV9910BE MXHV9910.pdf
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Produkt ist nicht verfügbar
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MXHV9910BETR MXHV9910.pdf
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MXHV9910BTR MXHV9910.pdf
MXHV9910BTR
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 0.28A
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXFP60N25X3 IXFA(P,Q)60N25X3.pdf
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.16 EUR
9+10.13 EUR
11+8.31 EUR
50+7.79 EUR
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IXFP60N25X3M IXFP60N25X3M.pdf
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
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8+11.25 EUR
9+10.21 EUR
11+8.38 EUR
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CPC1965G CPC1965G.pdf
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.77 EUR
10+8.75 EUR
25+8.03 EUR
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IXTA76P10T IXT_76P10T_HV.pdf
IXTA76P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 25mΩ
Reverse recovery time: 70ns
Gate charge: 197nC
Technology: TrenchP™
Kind of package: tube
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
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11+8.5 EUR
12+7.52 EUR
13+6.93 EUR
14+6.13 EUR
25+5.58 EUR
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IXTA76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTA76N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 44mΩ
Reverse recovery time: 148ns
Gate charge: 92nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA76P10T-TRL littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a
IXTA76P10T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN56N90P IXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXBT14N300HV littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
Produkt ist nicht verfügbar
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MCC132-12io1 L079.pdf PCN241015_Y4-M6 screw.pdf
MCC132-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
auf Bestellung 7 Stücke:
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AnzahlPrivatkunde
1+100.06 EUR
6+95.62 EUR
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MCC132-08io1 PCN241015_Y4-M6 screw.pdf
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
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2+73.78 EUR
3+68.89 EUR
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MCC132-16io1 MCC132-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCC132-14io1 MCC132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
Produkt ist nicht verfügbar
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MCC132-18io1 PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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MCC132-18IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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MCC132-14IO1B MCC132-14io1B.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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MCC132-16IO1B PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Case: ISO247™
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.54 EUR
10+11.21 EUR
30+9.51 EUR
Mindestbestellmenge: 7 Stücke
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CMA80MT1600NHB CMA80MT1600NHB.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 325A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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CMA60MT1600NHB CMA60MT1600NHB.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHR CMA60MT1600NHR.pdf
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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DSP8-12A DSP8-12A.pdf
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Kind of package: tube
Power dissipation: 100W
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.11 EUR
25+3.47 EUR
29+3.01 EUR
36+2.37 EUR
50+2.23 EUR
Mindestbestellmenge: 21 Stücke
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DSP8-12AS-TRL DSP8-12AS.pdf
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Kind of package: reel; tape
Power dissipation: 100W
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5.15 EUR
20+4.44 EUR
22+4.05 EUR
25+3.53 EUR
100+3.25 EUR
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DSP8-12AS-TUB DSP8-12AS.pdf
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 100W
Produkt ist nicht verfügbar
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IX4427N IX4426-27-28.pdf
IX4427N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
59+1.45 EUR
81+1.06 EUR
91+0.94 EUR
97+0.88 EUR
Mindestbestellmenge: 59 Stücke
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IX4427NTR IX4426-27-28.pdf
IX4427NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 1841 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
66+1.3 EUR
91+0.94 EUR
96+0.89 EUR
99+0.87 EUR
103+0.83 EUR
250+0.81 EUR
Mindestbestellmenge: 66 Stücke
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IX4427MTR IX4426-27-28.pdf
IX4427MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 2112 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
58+1.48 EUR
80+1.07 EUR
90+0.95 EUR
Mindestbestellmenge: 58 Stücke
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IXBT16N170AHV IXBA16N170AHV.pdf
IXBT16N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+18.65 EUR
10+16.74 EUR
Mindestbestellmenge: 5 Stücke
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IXBT16N170A IXBH(T)16N170A.pdf
IXBT16N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+18.65 EUR
Mindestbestellmenge: 5 Stücke
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IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 390mΩ
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 65A
Type of semiconductor module: MOSFET transistor
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+61.77 EUR
3+54.53 EUR
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IXGP20N120A3 IXG_20N120A3.pdf
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220AB
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IXGP20N120B3 IXGA(P)20N120B3.pdf
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO220-3
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 80A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.13 EUR
Mindestbestellmenge: 8 Stücke
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IXYP20N120C3 IXYH(P)20N120C3_HV.pdf
IXYP20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO220-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Produkt ist nicht verfügbar
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IXYH40N120C3 IXYH40N120C3.pdf
IXYH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 175A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120A2 IXGH(T)40N120A2.pdf
IXGH40N120A2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120B2D1 IXGH40N120B2D1.pdf
IXGH40N120B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120C3 IXGH40N120C3.pdf
IXGH40N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGH40N120C3D1 IXGH40N120C3D1.pdf
IXGH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120A4 littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Pulsed collector current: 275A
Gate-emitter voltage: ±20V
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH40N120B3 IXYH40N120B3.pdf
IXYH40N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B3D1 IXYH40N120B3D1.pdf
IXYH40N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Pulsed collector current: 180A
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 250A
Gate-emitter voltage: ±20V
Collector current: 136A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH40N120B4H1 PdfFile_145990.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Pulsed collector current: 240A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH40N120C3D1 IXYH40N120C3D1.pdf
IXYH40N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Pulsed collector current: 160A
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYH40N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Pulsed collector current: 230A
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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