| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DSP8-12AS-TRL | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120kA Power dissipation: 100W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 792 Stücke: Lieferzeit 7-14 Tag (e) |
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DSS16-0045A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. forward impulse current: 280A Kind of package: tube Power dissipation: 105W Max. load current: 35A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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DSS2X121-0045B | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 45V Load current: 120A x2 Case: SOT227B Max. forward voltage: 0.59V Max. forward impulse current: 1.6kA Electrical mounting: screw Max. load current: 120A Mechanical mounting: screw Features of semiconductor devices: Schottky Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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DSS6-0025BS | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.3V Load current: 6A Max. off-state voltage: 25V Power dissipation: 40W Max. forward impulse current: 120A Case: DPAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 693 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSSK10-018A | IXYS |
DSSK10-018A THT Schottky diodes |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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DSSK16-01A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 100V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Max. forward impulse current: 120A Kind of package: tube Heatsink thickness: 1.14...1.39mm Power dissipation: 90W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSSK48-0025B | IXYS |
DSSK48-0025B THT Schottky diodes |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSSK48-003BS | IXYS | DSSK48-003BS SMD Schottky diodes |
auf Bestellung 558 Stücke: Lieferzeit 7-14 Tag (e) |
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DSSK50-0025B | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 25V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.42V Max. forward impulse current: 330A Power dissipation: 90W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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DSSK50-015A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.68V Max. forward impulse current: 0.45kA Power dissipation: 135W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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DSSK50-01A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.65V Max. forward impulse current: 0.45kA Power dissipation: 135W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSSK60-015A | IXYS |
DSSK60-015A THT Schottky diodes |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSSK70-0015B | IXYS |
DSSK70-0015B THT Schottky diodes |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSSK80-0045B | IXYS |
DSSK80-0045B THT Schottky diodes |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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FBE22-06N1 | IXYS |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 22A Max. forward impulse current: 50A Electrical mounting: THT Case: ISOPLUS i4-pac™ x024a Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 244 Stücke: Lieferzeit 7-14 Tag (e) |
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| FBO40-12N | IXYS |
FBO40-12N SMD/THT sing. phase diode bridge rectif. |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDA217 | IXYS |
FDA217 MOSFET/IGBT drivers |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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FDA217S | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; Ch: 2 Case: SO8 Mounting: SMD Kind of package: tube Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Type of integrated circuit: driver Operating temperature: -40...85°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 179 Stücke: Lieferzeit 7-14 Tag (e) |
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FDM47-06KC5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A Type of transistor: N-MOSFET Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: diode/transistor Features of semiconductor devices: super junction coolmos Topology: buck chopper Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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FMD15-06KC5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A Type of transistor: N-MOSFET Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: diode/transistor Features of semiconductor devices: super junction coolmos Topology: boost chopper Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| FMM22-05PF | IXYS | FMM22-05PF Multi channel transistors |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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| FMM22-06PF | IXYS | FMM22-06PF Multi channel transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| FMM50-025TF | IXYS |
FMM50-025TF Multi channel transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| FMM75-01F | IXYS |
FMM75-01F Multi channel transistors |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| FUO22-12N | IXYS |
FUO22-12N Three phase diode bridge rectifiers |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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FUO22-16N | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a Anzahl je Verpackung: 1 Stücke |
auf Bestellung 142 Stücke: Lieferzeit 7-14 Tag (e) |
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| FUO50-16N | IXYS |
FUO50-16N Three phase diode bridge rectifiers |
auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
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| GBO25-16NO1 | IXYS |
GBO25-16NO1 Flat single phase diode bridge rectif. |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| GUO40-12NO1 | IXYS |
GUO40-12NO1 Three phase diode bridge rectifiers |
auf Bestellung 107 Stücke: Lieferzeit 7-14 Tag (e) |
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| GUO40-16NO1 | IXYS |
GUO40-16NO1 Three phase diode bridge rectifiers |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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IX2120B | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28 Output current: -2...2A Number of channels: 2 Mounting: SMD Supply voltage: 15...20V Voltage class: 1.2kV Kind of package: tube Operating temperature: -40...150°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 232 Stücke: Lieferzeit 7-14 Tag (e) |
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IX2127G | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Output current: -500...250mA Mounting: THT Number of channels: 1 Operating temperature: -40...125°C Case: DIP8 Supply voltage: 9...12V Kind of package: tube Voltage class: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 225 Stücke: Lieferzeit 7-14 Tag (e) |
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IX2127N | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Output current: -500...250mA Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Supply voltage: 9...12V Kind of package: tube Voltage class: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 825 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Kind of package: tube Kind of integrated circuit: gate driver; low-side Type of integrated circuit: driver Mounting: SMD Kind of output: non-inverting Case: SO8 Operating temperature: -40...125°C Output current: -2...2A Number of channels: 2 Supply voltage: 5...24V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1672 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4340N | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Case: SO8 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Kind of output: non-inverting Anzahl je Verpackung: 1 Stücke |
auf Bestellung 874 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4340NE | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Case: SO8-EP Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Kind of output: non-inverting Anzahl je Verpackung: 1 Stücke |
auf Bestellung 920 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4340UE | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1775 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX4426MTR | IXYS |
IX4426MTR MOSFET/IGBT drivers |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX4426N | IXYS |
IX4426N MOSFET/IGBT drivers |
auf Bestellung 1130 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4427MTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Type of integrated circuit: driver Kind of output: non-inverting Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 774 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4427N | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Type of integrated circuit: driver Kind of output: non-inverting Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1759 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4427NTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Type of integrated circuit: driver Kind of output: non-inverting Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX4428MTR | IXYS |
IX4428MTR MOSFET/IGBT drivers |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX4428N | IXYS |
IX4428N MOSFET/IGBT drivers |
auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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IX9907N | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: tube Integrated circuit features: linear dimming; PWM Operating voltage: 650V DC Output current: 1.7A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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IX9908N | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: tube Integrated circuit features: linear dimming; PWM Operating voltage: 650V DC Output current: 1.7A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX9915N | IXYS |
IX9915N Integrated circuits - others |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA12IF1200HB | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 13A Power dissipation: 85W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 27nC Kind of package: tube Turn-off time: 350ns Technology: Planar; Sonic FRD™; XPT™ Turn-on time: 110ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA20PG1200DHGLB | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Collector current: 23A Power dissipation: 130W Case: SMPD-B Gate-emitter voltage: ±20V Pulsed collector current: 45A Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Technology: ISOPLUS™; Sonic FRD™ Electrical mounting: SMT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Technology: ISOPLUS™; Sonic FRD™ Power dissipation: 147W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA37IF1200HJ | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 37A Power dissipation: 195W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-off time: 350ns Technology: Planar; Sonic FRD™; XPT™ Turn-on time: 110ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA70I1200NA | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 65A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw Technology: XPT™ Features of semiconductor devices: high voltage Power dissipation: 350W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBA16N170AHV | IXYS |
IXBA16N170AHV SMD IGBT transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBF20N300 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 105nC Turn-on time: 64ns Turn-off time: 0.3µs Power dissipation: 150W Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 130A Collector-emitter voltage: 3kV Technology: BiMOSFET™ Case: ISOPLUS i4-pac™ x024c Features of semiconductor devices: high voltage Type of transistor: IGBT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH10N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 30nC Turn-on time: 63ns Turn-off time: 1.8µs Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 140W Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH10N300HV | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247HV Kind of package: tube Gate charge: 46nC Turn-on time: 805ns Turn-off time: 2.13µs Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 88A Power dissipation: 180W Collector-emitter voltage: 3kV Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH16N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Turn-on time: 220ns Gate charge: 72nC Turn-off time: 940ns Collector current: 16A Technology: BiMOSFET™; FRED Gate-emitter voltage: ±20V Pulsed collector current: 120A Power dissipation: 250W Features of semiconductor devices: high voltage Collector-emitter voltage: 1.7kV Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBH24N170 | IXYS |
IXBH24N170 THT IGBT transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBK55N300 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO264 Gate charge: 335nC Turn-off time: 475ns Turn-on time: 637ns Gate-emitter voltage: ±20V Collector current: 55A Pulsed collector current: 600A Power dissipation: 625W Collector-emitter voltage: 3kV Kind of package: tube Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBN42N170A | IXYS | IXBN42N170A IGBT modules |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| DSP8-12AS-TRL |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 792 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.37 EUR |
| 24+ | 3 EUR |
| 27+ | 2.73 EUR |
| DSS16-0045A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.5 EUR |
| 52+ | 1.37 EUR |
| DSS2X121-0045B | ![]() |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 42.41 EUR |
| 3+ | 37.49 EUR |
| 10+ | 33.72 EUR |
| DSS6-0025BS |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.3V
Load current: 6A
Max. off-state voltage: 25V
Power dissipation: 40W
Max. forward impulse current: 120A
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 693 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 114+ | 0.63 EUR |
| 131+ | 0.55 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| DSSK10-018A |
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Hersteller: IXYS
DSSK10-018A THT Schottky diodes
DSSK10-018A THT Schottky diodes
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.56 EUR |
| 44+ | 1.63 EUR |
| 250+ | 1.02 EUR |
| DSSK16-01A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| 10+ | 7.15 EUR |
| 50+ | 1.43 EUR |
| DSSK48-0025B |
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Hersteller: IXYS
DSSK48-0025B THT Schottky diodes
DSSK48-0025B THT Schottky diodes
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
| 21+ | 3.4 EUR |
| 50+ | 2.4 EUR |
| DSSK48-003BS |
Hersteller: IXYS
DSSK48-003BS SMD Schottky diodes
DSSK48-003BS SMD Schottky diodes
auf Bestellung 558 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 61+ | 1.19 EUR |
| 64+ | 1.13 EUR |
| 500+ | 1.12 EUR |
| DSSK50-0025B |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; TO247-3; Ufmax: 0.42V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.42V
Max. forward impulse current: 330A
Power dissipation: 90W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 30+ | 2.39 EUR |
| 120+ | 1.94 EUR |
| DSSK50-015A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; TO247-3; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.68V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.88 EUR |
| 14+ | 5.21 EUR |
| 16+ | 4.76 EUR |
| DSSK50-01A |
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Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.65V
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| DSSK60-015A | ![]() |
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Hersteller: IXYS
DSSK60-015A THT Schottky diodes
DSSK60-015A THT Schottky diodes
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.7 EUR |
| 11+ | 6.61 EUR |
| 12+ | 6.25 EUR |
| DSSK70-0015B |
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Hersteller: IXYS
DSSK70-0015B THT Schottky diodes
DSSK70-0015B THT Schottky diodes
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.78 EUR |
| 25+ | 2.93 EUR |
| 26+ | 2.77 EUR |
| DSSK80-0045B |
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Hersteller: IXYS
DSSK80-0045B THT Schottky diodes
DSSK80-0045B THT Schottky diodes
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 3+ | 23.84 EUR |
| 8+ | 8.94 EUR |
| 30+ | 6.31 EUR |
| FBE22-06N1 |
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Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Electrical mounting: THT
Case: ISOPLUS i4-pac™ x024a
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 244 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.24 EUR |
| 10+ | 12.37 EUR |
| FBO40-12N |
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Hersteller: IXYS
FBO40-12N SMD/THT sing. phase diode bridge rectif.
FBO40-12N SMD/THT sing. phase diode bridge rectif.
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.14 EUR |
| 4+ | 17.93 EUR |
| 25+ | 17.27 EUR |
| FDA217 |
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Hersteller: IXYS
FDA217 MOSFET/IGBT drivers
FDA217 MOSFET/IGBT drivers
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.02 EUR |
| 22+ | 3.39 EUR |
| 23+ | 3.2 EUR |
| 250+ | 3.12 EUR |
| FDA217S |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 22+ | 3.35 EUR |
| 23+ | 3.15 EUR |
| 24+ | 3.05 EUR |
| FDM47-06KC5 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.65 EUR |
| 10+ | 10.27 EUR |
| FMD15-06KC5 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.63 EUR |
| 5+ | 17.36 EUR |
| 10+ | 16.06 EUR |
| FMM22-05PF |
Hersteller: IXYS
FMM22-05PF Multi channel transistors
FMM22-05PF Multi channel transistors
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 27.34 EUR |
| 4+ | 20.28 EUR |
| 25+ | 19.49 EUR |
| FMM22-06PF |
Hersteller: IXYS
FMM22-06PF Multi channel transistors
FMM22-06PF Multi channel transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.84 EUR |
| 4+ | 22.15 EUR |
| 250+ | 21.29 EUR |
| FMM50-025TF |
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Hersteller: IXYS
FMM50-025TF Multi channel transistors
FMM50-025TF Multi channel transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.82 EUR |
| 4+ | 18.23 EUR |
| 25+ | 17.62 EUR |
| FMM75-01F |
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Hersteller: IXYS
FMM75-01F Multi channel transistors
FMM75-01F Multi channel transistors
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.85 EUR |
| 4+ | 19.13 EUR |
| 25+ | 18.53 EUR |
| FUO22-12N |
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Hersteller: IXYS
FUO22-12N Three phase diode bridge rectifiers
FUO22-12N Three phase diode bridge rectifiers
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.38 EUR |
| 4+ | 18.63 EUR |
| 5+ | 17.62 EUR |
| 25+ | 17.33 EUR |
| FUO22-16N |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Anzahl je Verpackung: 1 Stücke
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 21.24 EUR |
| 5+ | 18.36 EUR |
| FUO50-16N |
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Hersteller: IXYS
FUO50-16N Three phase diode bridge rectifiers
FUO50-16N Three phase diode bridge rectifiers
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 26.28 EUR |
| 4+ | 22.22 EUR |
| 10+ | 21.58 EUR |
| GBO25-16NO1 |
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Hersteller: IXYS
GBO25-16NO1 Flat single phase diode bridge rectif.
GBO25-16NO1 Flat single phase diode bridge rectif.
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.47 EUR |
| 7+ | 10.81 EUR |
| 112+ | 10.42 EUR |
| GUO40-12NO1 |
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Hersteller: IXYS
GUO40-12NO1 Three phase diode bridge rectifiers
GUO40-12NO1 Three phase diode bridge rectifiers
auf Bestellung 107 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 21.62 EUR |
| GUO40-16NO1 |
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Hersteller: IXYS
GUO40-16NO1 Three phase diode bridge rectifiers
GUO40-16NO1 Three phase diode bridge rectifiers
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 21.62 EUR |
| IX2120B |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Supply voltage: 15...20V
Voltage class: 1.2kV
Kind of package: tube
Operating temperature: -40...150°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 232 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.13 EUR |
| 36+ | 2.03 EUR |
| IX2127G |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 225 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| IX2127N |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Output current: -500...250mA
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 9...12V
Kind of package: tube
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 825 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| IX4310N |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Mounting: SMD
Kind of output: non-inverting
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Mounting: SMD
Kind of output: non-inverting
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1672 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 66+ | 1.1 EUR |
| 78+ | 0.93 EUR |
| 100+ | 0.73 EUR |
| 300+ | 0.61 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| IX4340N |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 874 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 71+ | 1.01 EUR |
| 86+ | 0.84 EUR |
| 100+ | 0.77 EUR |
| 300+ | 0.68 EUR |
| IX4340NE |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 75+ | 0.96 EUR |
| 86+ | 0.83 EUR |
| 106+ | 0.68 EUR |
| IX4340UE |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1775 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 60+ | 1.2 EUR |
| 71+ | 1.02 EUR |
| 85+ | 0.84 EUR |
| 240+ | 0.72 EUR |
| 560+ | 0.71 EUR |
| IX4426MTR |
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Hersteller: IXYS
IX4426MTR MOSFET/IGBT drivers
IX4426MTR MOSFET/IGBT drivers
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 82+ | 0.87 EUR |
| 87+ | 0.83 EUR |
| IX4426N |
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Hersteller: IXYS
IX4426N MOSFET/IGBT drivers
IX4426N MOSFET/IGBT drivers
auf Bestellung 1130 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 103+ | 0.7 EUR |
| IX4427MTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 774 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 59+ | 1.23 EUR |
| 69+ | 1.05 EUR |
| 100+ | 0.84 EUR |
| 250+ | 0.76 EUR |
| IX4427N |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1759 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 94+ | 0.77 EUR |
| 104+ | 0.69 EUR |
| IX4427NTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.67 EUR |
| 69+ | 1.05 EUR |
| 78+ | 0.92 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.77 EUR |
| 250+ | 0.69 EUR |
| 500+ | 0.68 EUR |
| IX4428MTR |
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Hersteller: IXYS
IX4428MTR MOSFET/IGBT drivers
IX4428MTR MOSFET/IGBT drivers
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 23+ | 3.1 EUR |
| 62+ | 1.16 EUR |
| 2000+ | 0.7 EUR |
| IX4428N |
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Hersteller: IXYS
IX4428N MOSFET/IGBT drivers
IX4428N MOSFET/IGBT drivers
auf Bestellung 670 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 95+ | 0.76 EUR |
| 99+ | 0.73 EUR |
| 100+ | 0.72 EUR |
| IX9907N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| IX9908N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 97+ | 0.74 EUR |
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 300+ | 0.54 EUR |
| IX9915N |
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Hersteller: IXYS
IX9915N Integrated circuits - others
IX9915N Integrated circuits - others
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 132+ | 0.54 EUR |
| IXA12IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.75 EUR |
| 16+ | 4.73 EUR |
| 30+ | 4.06 EUR |
| 120+ | 3.58 EUR |
| 510+ | 3.55 EUR |
| IXA20PG1200DHGLB |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Collector current: 23A
Power dissipation: 130W
Case: SMPD-B
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Collector current: 23A
Power dissipation: 130W
Case: SMPD-B
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.13 EUR |
| 7+ | 10.64 EUR |
| 10+ | 10.37 EUR |
| IXA30RG1200DHGLB |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.64 EUR |
| IXA37IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.48 EUR |
| 10+ | 22.52 EUR |
| 30+ | 20.21 EUR |
| IXA70I1200NA |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 44.66 EUR |
| 3+ | 40.15 EUR |
| 10+ | 38.62 EUR |
| IXBA16N170AHV |
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Hersteller: IXYS
IXBA16N170AHV SMD IGBT transistors
IXBA16N170AHV SMD IGBT transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.81 EUR |
| 50+ | 24.02 EUR |
| IXBF20N300 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 73.87 EUR |
| 3+ | 67.57 EUR |
| 10+ | 65.06 EUR |
| IXBH10N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.16 EUR |
| 30+ | 10.47 EUR |
| IXBH10N300HV |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Power dissipation: 180W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Power dissipation: 180W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 102.19 EUR |
| 3+ | 90.22 EUR |
| 10+ | 81.08 EUR |
| 30+ | 80.25 EUR |
| IXBH16N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
Collector current: 16A
Technology: BiMOSFET™; FRED
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
Collector current: 16A
Technology: BiMOSFET™; FRED
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.96 EUR |
| 10+ | 13.63 EUR |
| 30+ | 11.17 EUR |
| IXBH24N170 |
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Hersteller: IXYS
IXBH24N170 THT IGBT transistors
IXBH24N170 THT IGBT transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 30+ | 23.44 EUR |
| IXBK55N300 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 114.17 EUR |
| 10+ | 111.54 EUR |
| IXBN42N170A |
Hersteller: IXYS
IXBN42N170A IGBT modules
IXBN42N170A IGBT modules
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 43.5 EUR |


























