| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IX4426MTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...30V Case: DFN8 Kind of output: inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4426N | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: low-side; MOSFET gate driver Kind of output: inverting Kind of package: tube Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1130 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4427MTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Type of integrated circuit: driver Kind of output: non-inverting Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 774 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4427N | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Type of integrated circuit: driver Kind of output: non-inverting Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1759 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4427NTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Type of integrated circuit: driver Kind of output: non-inverting Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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IX4428MTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...30V Case: DFN8 Kind of output: inverting; non-inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX4428N | IXYS |
IX4428N MOSFET/IGBT drivers |
auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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IX9907N | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: tube Integrated circuit features: linear dimming; PWM Operating voltage: 650V DC Output current: 1.7A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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IX9908N | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: tube Integrated circuit features: linear dimming; PWM Operating voltage: 650V DC Output current: 1.7A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX9915N | IXYS |
IX9915N Integrated circuits - others |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA12IF1200HB | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 13A Power dissipation: 85W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 27nC Kind of package: tube Turn-off time: 350ns Technology: Planar; Sonic FRD™; XPT™ Turn-on time: 110ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA20PG1200DHGLB | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Collector current: 23A Power dissipation: 130W Case: SMPD-B Gate-emitter voltage: ±20V Pulsed collector current: 45A Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Technology: ISOPLUS™; Sonic FRD™ Electrical mounting: SMT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Technology: ISOPLUS™; Sonic FRD™ Power dissipation: 147W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA37IF1200HJ | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 37A Power dissipation: 195W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-off time: 350ns Technology: Planar; Sonic FRD™; XPT™ Turn-on time: 110ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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IXA70I1200NA | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 65A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw Technology: XPT™ Features of semiconductor devices: high voltage Power dissipation: 350W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBA16N170AHV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 65nC Turn-on time: 43ns Turn-off time: 370ns Power dissipation: 150W Collector current: 10A Pulsed collector current: 40A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBF20N300 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 105nC Turn-on time: 64ns Turn-off time: 0.3µs Power dissipation: 150W Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 130A Collector-emitter voltage: 3kV Technology: BiMOSFET™ Case: ISOPLUS i4-pac™ x024c Features of semiconductor devices: high voltage Type of transistor: IGBT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH10N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Gate charge: 30nC Turn-on time: 63ns Turn-off time: 1.8µs Collector current: 10A Power dissipation: 140W Pulsed collector current: 40A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Kind of package: tube Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH10N300HV | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247HV Gate charge: 46nC Turn-on time: 805ns Turn-off time: 2.13µs Collector current: 10A Power dissipation: 180W Pulsed collector current: 88A Gate-emitter voltage: ±20V Collector-emitter voltage: 3kV Kind of package: tube Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH16N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Turn-on time: 220ns Gate charge: 72nC Turn-off time: 940ns Collector current: 16A Technology: BiMOSFET™; FRED Gate-emitter voltage: ±20V Pulsed collector current: 120A Power dissipation: 250W Features of semiconductor devices: high voltage Collector-emitter voltage: 1.7kV Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH24N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Power dissipation: 250W Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBK55N300 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO264 Gate charge: 335nC Turn-off time: 475ns Turn-on time: 637ns Gate-emitter voltage: ±20V Collector current: 55A Pulsed collector current: 600A Power dissipation: 625W Collector-emitter voltage: 3kV Kind of package: tube Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBN42N170A | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Power dissipation: 313W Collector current: 21A Pulsed collector current: 265A Gate-emitter voltage: ±20V Technology: BiMOSFET™ Max. off-state voltage: 1.7kV Features of semiconductor devices: high voltage Type of semiconductor module: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBN75N170 | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Power dissipation: 625W Collector current: 75A Pulsed collector current: 680A Gate-emitter voltage: ±20V Technology: BiMOSFET™ Max. off-state voltage: 1.7kV Features of semiconductor devices: high voltage Type of semiconductor module: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBN75N170A | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Collector current: 42A Case: SOT227B Application: for UPS; motors Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Mechanical mounting: screw Power dissipation: 500W Technology: BiMOSFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-12R | IXYS |
IXBOD1-12R Thyristors - others |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-13R | IXYS |
IXBOD1-13R Thyristors - others |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-16RD | IXYS |
IXBOD1-16RD Thyristors - others |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-18R | IXYS |
IXBOD1-18R Thyristors - others |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-18RD | IXYS |
IXBOD1-18RD Thyristors - others |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-21R | IXYS |
IXBOD1-21R Thyristors - others |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXBOD1-26RD | IXYS |
IXBOD1-26RD Thyristors - others |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBOD1-36R | IXYS |
Category: Thyristors - othersDescription: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV Type of thyristor: BOD x4 Mounting: THT Max. load current: 0.7A Case: BOD Breakover voltage: 3.6kV Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBOD1-38R | IXYS |
Category: Thyristors - othersDescription: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV Type of thyristor: BOD x4 Mounting: THT Max. load current: 0.7A Case: BOD Breakover voltage: 3.8kV Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBT10N170 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Gate charge: 30nC Turn-on time: 63ns Turn-off time: 1.8µs Power dissipation: 140W Collector current: 10A Pulsed collector current: 40A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBT16N170A | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 150W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Turn-on time: 43ns Gate charge: 65nC Turn-off time: 370ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBT16N170AHV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV Technology: BiMOSFET™ Mounting: SMD Case: TO268HV Kind of package: tube Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 40A Power dissipation: 150W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Turn-on time: 43ns Gate charge: 65nC Turn-off time: 370ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBT24N170 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Collector current: 24A Power dissipation: 250W Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Pulsed collector current: 230A Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBT2N250 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268 Mounting: SMD Features of semiconductor devices: high voltage Type of transistor: IGBT Gate charge: 10.6nC Turn-off time: 252ns Turn-on time: 310ns Power dissipation: 32W Collector current: 2A Pulsed collector current: 13A Gate-emitter voltage: ±20V Collector-emitter voltage: 2.5kV Kind of package: tube Technology: BiMOSFET™ Case: TO268 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBX75N170A | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Gate charge: 358nC Turn-on time: 65ns Turn-off time: 595ns Power dissipation: 1.04kW Collector current: 65A Pulsed collector current: 300A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXCP10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA Case: TO220AB Mounting: THT Operating voltage: 450V DC Kind of integrated circuit: current regulator Type of integrated circuit: driver Operating temperature: -55...150°C Operating current: 2...100mA Power dissipation: 40W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 507 Stücke: Lieferzeit 7-14 Tag (e) |
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IXCY10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA Case: TO252 Mounting: SMD Operating voltage: 450V DC Kind of integrated circuit: current regulator Type of integrated circuit: driver Operating temperature: -55...150°C Operating current: 2...100mA Power dissipation: 40W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 116 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXCY10M90S | IXYS |
IXCY10M90S Integrated circuits - others |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD604D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 79ns Turn-on time: 81ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 146 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD604SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 79ns Turn-on time: 81ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 597 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD604SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 79ns Turn-on time: 81ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 732 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Output current: -9...9A Turn-off time: 105ns Turn-on time: 115ns Number of channels: 1 Supply voltage: 4.5...35V Kind of integrated circuit: gate driver; low-side Kind of output: non-inverting Anzahl je Verpackung: 1 Stücke |
auf Bestellung 712 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD609D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Supply voltage: 4.5...35V Case: DFN8 Kind of output: non-inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -9...9A Turn-off time: 105ns Turn-on time: 115ns Number of channels: 1 Kind of integrated circuit: gate driver; low-side Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD609PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 105ns Turn-on time: 115ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 379 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDD609SI | IXYS |
IXDD609SI MOSFET/IGBT drivers |
auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD609SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 105ns Turn-on time: 115ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDD609YI | IXYS |
IXDD609YI MOSFET/IGBT drivers |
auf Bestellung 857 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD614CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1049 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD614SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD614YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 540 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDD630CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 135ns Turn-on time: 135ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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IXDF602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 93ns Turn-on time: 93ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDF602SIA | IXYS |
IXDF602SIA MOSFET/IGBT drivers |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| IX4426MTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 80+ | 0.9 EUR |
| 81+ | 0.89 EUR |
| 88+ | 0.82 EUR |
| 90+ | 0.8 EUR |
| IX4426N |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1130 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 73+ | 0.99 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| IX4427MTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 774 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 59+ | 1.23 EUR |
| 69+ | 1.05 EUR |
| 100+ | 0.84 EUR |
| 250+ | 0.76 EUR |
| IX4427N |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1759 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 94+ | 0.77 EUR |
| 104+ | 0.69 EUR |
| IX4427NTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.67 EUR |
| 69+ | 1.05 EUR |
| 78+ | 0.92 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.77 EUR |
| 250+ | 0.69 EUR |
| 500+ | 0.68 EUR |
| IX4428MTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| 23+ | 3.1 EUR |
| 50+ | 1.43 EUR |
| 62+ | 1.16 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.69 EUR |
| IX4428N |
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Hersteller: IXYS
IX4428N MOSFET/IGBT drivers
IX4428N MOSFET/IGBT drivers
auf Bestellung 670 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 95+ | 0.76 EUR |
| 99+ | 0.73 EUR |
| 100+ | 0.72 EUR |
| IX9907N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| IX9908N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
Output current: 1.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 97+ | 0.74 EUR |
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 300+ | 0.54 EUR |
| IX9915N |
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Hersteller: IXYS
IX9915N Integrated circuits - others
IX9915N Integrated circuits - others
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 132+ | 0.54 EUR |
| IXA12IF1200HB |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.75 EUR |
| 16+ | 4.73 EUR |
| 30+ | 4.06 EUR |
| 120+ | 3.58 EUR |
| 510+ | 3.55 EUR |
| IXA20PG1200DHGLB |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Collector current: 23A
Power dissipation: 130W
Case: SMPD-B
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Collector current: 23A
Power dissipation: 130W
Case: SMPD-B
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.13 EUR |
| 7+ | 10.64 EUR |
| 10+ | 10.37 EUR |
| IXA30RG1200DHGLB |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.64 EUR |
| IXA37IF1200HJ |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.48 EUR |
| 10+ | 22.52 EUR |
| 30+ | 20.21 EUR |
| IXA70I1200NA |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Technology: XPT™
Features of semiconductor devices: high voltage
Power dissipation: 350W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 44.66 EUR |
| 3+ | 40.15 EUR |
| 10+ | 38.62 EUR |
| IXBA16N170AHV |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 65nC
Turn-on time: 43ns
Turn-off time: 370ns
Power dissipation: 150W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 65nC
Turn-on time: 43ns
Turn-off time: 370ns
Power dissipation: 150W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.81 EUR |
| 50+ | 24.02 EUR |
| IXBF20N300 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 73.87 EUR |
| 3+ | 67.57 EUR |
| 10+ | 65.06 EUR |
| IXBH10N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Power dissipation: 140W
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Power dissipation: 140W
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.16 EUR |
| 30+ | 10.47 EUR |
| IXBH10N300HV |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Power dissipation: 180W
Pulsed collector current: 88A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Power dissipation: 180W
Pulsed collector current: 88A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 102.19 EUR |
| 3+ | 90.22 EUR |
| 10+ | 81.08 EUR |
| 30+ | 80.27 EUR |
| IXBH16N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
Collector current: 16A
Technology: BiMOSFET™; FRED
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
Collector current: 16A
Technology: BiMOSFET™; FRED
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.96 EUR |
| 10+ | 13.63 EUR |
| 30+ | 11.17 EUR |
| IXBH24N170 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Power dissipation: 250W
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Power dissipation: 250W
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 10+ | 23.45 EUR |
| 30+ | 23.44 EUR |
| IXBK55N300 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 114.17 EUR |
| 10+ | 111.54 EUR |
| IXBN42N170A |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 313W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 313W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 43.5 EUR |
| 10+ | 42.8 EUR |
| IXBN75N170 |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 625W
Collector current: 75A
Pulsed collector current: 680A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Power dissipation: 625W
Collector current: 75A
Pulsed collector current: 680A
Gate-emitter voltage: ±20V
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 114.07 EUR |
| 10+ | 112.21 EUR |
| IXBN75N170A |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 75.73 EUR |
| 3+ | 66.92 EUR |
| 10+ | 60.06 EUR |
| IXBOD1-12R |
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Hersteller: IXYS
IXBOD1-12R Thyristors - others
IXBOD1-12R Thyristors - others
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 87.2 EUR |
| IXBOD1-13R |
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Hersteller: IXYS
IXBOD1-13R Thyristors - others
IXBOD1-13R Thyristors - others
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 88.95 EUR |
| IXBOD1-16RD |
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Hersteller: IXYS
IXBOD1-16RD Thyristors - others
IXBOD1-16RD Thyristors - others
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 102.47 EUR |
| IXBOD1-18R |
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Hersteller: IXYS
IXBOD1-18R Thyristors - others
IXBOD1-18R Thyristors - others
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 87.2 EUR |
| IXBOD1-18RD |
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Hersteller: IXYS
IXBOD1-18RD Thyristors - others
IXBOD1-18RD Thyristors - others
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 90.03 EUR |
| 20+ | 89.85 EUR |
| IXBOD1-21R |
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Hersteller: IXYS
IXBOD1-21R Thyristors - others
IXBOD1-21R Thyristors - others
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 88.95 EUR |
| IXBOD1-26RD |
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Hersteller: IXYS
IXBOD1-26RD Thyristors - others
IXBOD1-26RD Thyristors - others
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 118.8 EUR |
| IXBOD1-36R |
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Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 146.72 EUR |
| 3+ | 128.7 EUR |
| 10+ | 116.09 EUR |
| 20+ | 111.83 EUR |
| IXBOD1-38R |
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Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 145.43 EUR |
| 3+ | 128.7 EUR |
| 10+ | 115.83 EUR |
| 20+ | 111.54 EUR |
| IXBT10N170 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Power dissipation: 140W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Power dissipation: 140W
Collector current: 10A
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.44 EUR |
| 8+ | 9.5 EUR |
| IXBT16N170A |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.67 EUR |
| 10+ | 14.07 EUR |
| IXBT16N170AHV |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.67 EUR |
| 10+ | 14.07 EUR |
| IXBT24N170 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.65 EUR |
| 10+ | 18.36 EUR |
| 30+ | 17.67 EUR |
| IXBT2N250 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-off time: 252ns
Turn-on time: 310ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-off time: 252ns
Turn-on time: 310ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 3+ | 23.84 EUR |
| 10+ | 20.45 EUR |
| IXBX75N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 358nC
Turn-on time: 65ns
Turn-off time: 595ns
Power dissipation: 1.04kW
Collector current: 65A
Pulsed collector current: 300A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 358nC
Turn-on time: 65ns
Turn-off time: 595ns
Power dissipation: 1.04kW
Collector current: 65A
Pulsed collector current: 300A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 33.91 EUR |
| IXCP10M45S |
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Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 507 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 28+ | 2.57 EUR |
| 50+ | 2.46 EUR |
| IXCY10M45S |
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Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Operating voltage: 450V DC
Kind of integrated circuit: current regulator
Type of integrated circuit: driver
Operating temperature: -55...150°C
Operating current: 2...100mA
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.27 EUR |
| 29+ | 2.49 EUR |
| 33+ | 2.19 EUR |
| 70+ | 2.12 EUR |
| IXCY10M90S |
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Hersteller: IXYS
IXCY10M90S Integrated circuits - others
IXCY10M90S Integrated circuits - others
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.54 EUR |
| 19+ | 3.86 EUR |
| 20+ | 3.65 EUR |
| 2520+ | 3.56 EUR |
| IXDD604D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 37+ | 1.93 EUR |
| 50+ | 1.43 EUR |
| IXDD604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.07 EUR |
| 48+ | 1.52 EUR |
| 53+ | 1.37 EUR |
| IXDD604SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 597 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 28+ | 2.59 EUR |
| IXDD604SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 732 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 43+ | 1.69 EUR |
| 50+ | 1.44 EUR |
| 55+ | 1.3 EUR |
| IXDD609CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Anzahl je Verpackung: 1 Stücke
auf Bestellung 712 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.65 EUR |
| 27+ | 2.73 EUR |
| 28+ | 2.59 EUR |
| 100+ | 2.55 EUR |
| 250+ | 2.49 EUR |
| IXDD609D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Case: DFN8
Kind of output: non-inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.97 EUR |
| 25+ | 2.86 EUR |
| 32+ | 2.23 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.32 EUR |
| IXDD609PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 379 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 48+ | 1.5 EUR |
| 54+ | 1.34 EUR |
| IXDD609SI |
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Hersteller: IXYS
IXDD609SI MOSFET/IGBT drivers
IXDD609SI MOSFET/IGBT drivers
auf Bestellung 670 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.82 EUR |
| 30+ | 2.43 EUR |
| 32+ | 2.3 EUR |
| 1000+ | 2.23 EUR |
| IXDD609SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.86 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.32 EUR |
| IXDD609YI |
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Hersteller: IXYS
IXDD609YI MOSFET/IGBT drivers
IXDD609YI MOSFET/IGBT drivers
auf Bestellung 857 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.63 EUR |
| 25+ | 2.87 EUR |
| 27+ | 2.72 EUR |
| 1000+ | 2.62 EUR |
| IXDD614CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 18+ | 4.02 EUR |
| IXDD614PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1049 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 35+ | 2.07 EUR |
| 37+ | 1.97 EUR |
| IXDD614SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 22+ | 3.36 EUR |
| IXDD614YI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 540 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| 16+ | 4.76 EUR |
| 50+ | 4.06 EUR |
| IXDD630CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.48 EUR |
| 10+ | 7.82 EUR |
| IXDF602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 51+ | 1.4 EUR |
| IXDF602SIA |
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Hersteller: IXYS
IXDF602SIA MOSFET/IGBT drivers
IXDF602SIA MOSFET/IGBT drivers
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.64 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.9 EUR |
| 300+ | 0.86 EUR |






















