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LBA716STR IXYS LBA716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Contacts configuration: SPST-NO + SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Manufacturer series: OptoMOS
Case: DIP8
Type of relay: solid state
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LCB716STR IXYS LCB716.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
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IXFX360N10T IXFX360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTA60N10T IXTA60N10T IXYS IXTA(P)60N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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IXFK360N10T IXFK360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXYP60N65A5 IXYS IXYP60N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 134A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA20N65C3-TRL IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 58A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Gate charge: 29nC
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IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 50A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Insulation voltage: 1.5kV
Case: SOP4
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
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CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Insulation voltage: 1.5kV
Case: SOP4
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 3ms
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IXXP12N65B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
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LCA715S LCA715S IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
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LCA715STR IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
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DSEC16-06A DSEC16-06A IXYS Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEC16-06AC DSEC16-06AC IXYS Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 40ns
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Technology: FRED
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MCD200-16IO1 MCD200-16IO1 IXYS MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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IXFP130N15X3 IXFP130N15X3 IXYS IXF_130N15X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: ultra junction x-class
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
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IXFK100N65X2 IXFK100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
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IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Collector current: 250A
Gate-emitter voltage: ±20V
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IXTA12N50P IXTA12N50P IXYS IXTA12N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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PS1201 PS1201 IXYS PS1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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IXYA50N65C5 IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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IXYA50N65C3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
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VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
Mechanical mounting: screw
Gate current: 25/50mA
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VGO36-16IO7 VGO36-16IO7 IXYS VGO36-16io7.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Leads: wire Ø 0.75mm
Mechanical mounting: screw
Gate current: 65mA
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VHF25-08IO7 VHF25-08IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
Mechanical mounting: screw
Gate current: 25/50mA
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IXTH1N200P3 IXTH1N200P3 IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXTH1N200P3HV IXTH1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXBT24N170 IXBT24N170 IXYS IXBH(t)24N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
Features of semiconductor devices: high voltage
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DSEP2X101-04A DSEP2X101-04A IXYS DSEP2X101-04A.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.4kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.73V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 132 Stücke:
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LBA110STR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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DSEI2X30-06C DSEI2X30-06C IXYS DSEI2X3x.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Kind of package: tube
Technology: FRED
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IXTK120N25P IXTK120N25P IXYS IXTK120N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
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IXTH120P065T IXTH120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
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IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
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IXTA120P065T IXTA120P065T IXYS IXT_120P065T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
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IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
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IXTP3N120 IXTP3N120 IXYS IXT_3N120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
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IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
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IXTP2R4N120P IXTP2R4N120P IXYS IXT_2R4N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
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100+4.96 EUR
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MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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IXFX80N50Q3 IXFX80N50Q3 IXYS IXFK(X)80N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFX80N50P IXFX80N50P IXYS IXFK(X)80N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VBO25-12NO2 VBO25-12NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBO25-12NO1 GBO25-12NO1 IXYS GBO25-12NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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VBO25-16AO2 VBO25-16AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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GBO25-16NO1 GBO25-16NO1 IXYS GBO25-16NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
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VBO25-16NO2 VBO25-16NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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VBO25-12AO2 VBO25-12AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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IXBH14N300HV IXYS media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
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IXDD609PI IXDD609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 115ns
Kind of output: non-inverting
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IXDD609CI IXDD609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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LBA716STR LBA716.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Contacts configuration: SPST-NO + SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Manufacturer series: OptoMOS
Case: DIP8
Type of relay: solid state
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LCB716STR LCB716.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Contacts configuration: SPST-NC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Turn-on time: 3ms
Manufacturer series: OptoMOS
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Produkt ist nicht verfügbar
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IXFX360N10T IXFK(X)360N10T.pdf
IXFX360N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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6+13.56 EUR
10+11.74 EUR
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IXTA60N10T IXTA(P)60N10T.pdf
IXTA60N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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IXFK360N10T IXFK(X)360N10T.pdf
IXFK360N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXYP60N65A5 IXYP60N65A5.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 134A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
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IXYA60N65A5-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 395W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Gate charge: 128nC
Produkt ist nicht verfügbar
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IXYA20N65C3-TRL littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 58A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Gate charge: 29nC
Produkt ist nicht verfügbar
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IXYP20N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 50A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
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CPC1006N CPC1006N.pdf
CPC1006N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Insulation voltage: 1.5kV
Case: SOP4
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
auf Bestellung 2145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
59+1.23 EUR
Mindestbestellmenge: 56
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CPC1018N cpc1018n.pdf
CPC1018N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Insulation voltage: 1.5kV
Case: SOP4
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 3ms
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
50+2.26 EUR
Mindestbestellmenge: 24
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IXXP12N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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LCA715S LCA715.pdf
LCA715S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.14 EUR
10+8.04 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCA715STR LCA715.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.15Ω
Max. operating current: 2.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Produkt ist nicht verfügbar
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DSEC16-06A Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5
DSEC16-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
25+2.87 EUR
35+2.1 EUR
Mindestbestellmenge: 21
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DSEC16-06AC Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7
DSEC16-06AC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 40ns
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Technology: FRED
Produkt ist nicht verfügbar
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MCD200-16IO1 MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD200-16IO1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+96.67 EUR
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IXFP130N15X3 IXF_130N15X3.pdf
IXFP130N15X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: ultra junction x-class
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Produkt ist nicht verfügbar
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IXFK100N65X2 IXFK(X)100N65X2.pdf
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Collector current: 250A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA12N50P IXTA12N50P-DTE.pdf
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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PS1201 PS1201.pdf
PS1201
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
25+5.18 EUR
100+4.66 EUR
Mindestbestellmenge: 14
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IXYA50N65C5
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
Produkt ist nicht verfügbar
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IXYA50N65C3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
Produkt ist nicht verfügbar
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VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
Mechanical mounting: screw
Gate current: 25/50mA
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.69 EUR
5+17.37 EUR
10+15.7 EUR
Mindestbestellmenge: 4
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VGO36-16IO7 VGO36-16io7.pdf
VGO36-16IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Leads: wire Ø 0.75mm
Mechanical mounting: screw
Gate current: 65mA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.59 EUR
5+20.45 EUR
Mindestbestellmenge: 4
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VHF25-08IO7 VHF25-ser.pdf
VHF25-08IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
Mechanical mounting: screw
Gate current: 25/50mA
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.79 EUR
5+16.6 EUR
10+14.93 EUR
Mindestbestellmenge: 4
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IXTH1N200P3 IXTA(H)1N200P3HV.pdf
IXTH1N200P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
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IXTH1N200P3HV IXTA(H)1N200P3HV.pdf
IXTH1N200P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
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IXBT24N170 IXBH(t)24N170.pdf
IXBT24N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
Features of semiconductor devices: high voltage
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.65 EUR
10+18.36 EUR
Mindestbestellmenge: 4
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DSEP2X101-04A DSEP2X101-04A.pdf
DSEP2X101-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.4kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.73V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+99.23 EUR
10+45.09 EUR
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LBA110STR LBA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DSEI2X30-06C DSEI2X3x.pdf
DSEI2X30-06C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.4V
Max. forward impulse current: 260A
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Kind of package: tube
Technology: FRED
Produkt ist nicht verfügbar
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IXTK120N25P IXTK120N25P-DTE.pdf
IXTK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.66 EUR
10+13.74 EUR
Mindestbestellmenge: 5
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IXTH120P065T IXT_120P065T.pdf
IXTH120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.41 EUR
10+7.58 EUR
30+6.61 EUR
Mindestbestellmenge: 8
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IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.59 EUR
13+5.78 EUR
50+4.89 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTA120P065T IXT_120P065T.pdf
IXTA120P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
13+5.68 EUR
50+4.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXTP3N120 IXT_3N120.pdf
IXTP3N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
10+7.44 EUR
50+6.65 EUR
Mindestbestellmenge: 9
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IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.65 EUR
31+2.33 EUR
70+2.22 EUR
Mindestbestellmenge: 25
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IXTP2R4N120P IXT_2R4N120P.pdf
IXTP2R4N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.26 EUR
11+6.79 EUR
50+5.61 EUR
100+4.96 EUR
250+4.83 EUR
Mindestbestellmenge: 10
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MKI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MKI75-06A7
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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IXFX80N50Q3 IXFK(X)80N50Q3.pdf
IXFX80N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX80N50P IXFK(X)80N50P.pdf
IXFX80N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VBO25-12NO2 VBO25_ser.pdf
VBO25-12NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.45 EUR
5+22.68 EUR
Mindestbestellmenge: 3
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GBO25-12NO1 GBO25-12NO1.pdf
GBO25-12NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.41 EUR
Mindestbestellmenge: 7
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VBO25-16AO2 VBO25_ser.pdf
VBO25-16AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+34.28 EUR
5+33.46 EUR
Mindestbestellmenge: 3
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GBO25-16NO1 GBO25-16NO1.pdf
GBO25-16NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
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VBO25-16NO2 VBO25_ser.pdf
VBO25-16NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VBO25-12AO2 VBO25_ser.pdf
VBO25-12AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBH14N300HV media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
Produkt ist nicht verfügbar
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IXDD609PI IXDD609CI.pdf
IXDD609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 115ns
Kind of output: non-inverting
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
50+1.43 EUR
54+1.34 EUR
Mindestbestellmenge: 37
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IXDD609CI IXDD609CI.pdf
IXDD609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
26+2.82 EUR
50+2.72 EUR
100+2.55 EUR
250+2.49 EUR
Mindestbestellmenge: 20
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IXDD609SI IXDD609CI.pdf
IXDD609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
31+2.33 EUR
33+2.23 EUR
50+2.22 EUR
Mindestbestellmenge: 24
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