| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IXTH40N50L2 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.17Ω Mounting: THT Gate charge: 0.32µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ40N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 0.32µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT40N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 0.32µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY14N60X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 180W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 18A |
auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN420N10T | IXYS |
Category: Transistor modules Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 420A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 2.3mΩ Pulsed drain current: 1kA Power dissipation: 1.07kW Technology: GigaMOS™; HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 140ns Gate charge: 670nC |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH24N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ460P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P Technology: Polar2™ Drain current: 24A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO3P On-state resistance: 0.27Ω Reverse recovery time: 400ns Mounting: THT Power dissipation: 480W Gate charge: 48nC Polarisation: unipolar |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN210N30X3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 210A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4.6mΩ Pulsed drain current: 650A Power dissipation: 695W Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate charge: 375nC Reverse recovery time: 190ns Gate-source voltage: ±20V Mechanical mounting: screw |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LF2304NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYH30N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector current: 30A Collector-emitter voltage: 650V Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH64N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 64A Power dissipation: 890W Case: TO247-3 On-state resistance: 51mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 450ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN140N30P | IXYS |
 Category: Transistor modulesDescription: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 110A Electrical mounting: screw On-state resistance: 24mΩ Pulsed drain current: 300A Power dissipation: 700W Technology: HiPerFET™; Polar™ Gate-source voltage: ±30V Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhancement Case: SOT227B Reverse recovery time: 200ns Gate charge: 185nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN132N50P3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 112A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 39mΩ Pulsed drain current: 330A Power dissipation: 1.5kW Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 250nC |
auf Bestellung 276 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN210N20P | IXYS |
Category: Transistor modules Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 188A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 10.5mΩ Pulsed drain current: 600A Power dissipation: 1.07kW Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate charge: 255nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN44N100P | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 110A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 0.35µC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH15N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3 Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 760mΩ Power dissipation: 543W Gate charge: 97nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 15A |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA5N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263 Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO263 Power dissipation: 250W Gate charge: 33.4nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP05N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 30Ω Reverse recovery time: 750ns Power dissipation: 50W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP05N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 40W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA05N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO263 On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 40W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP05N100M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP On-state resistance: 17Ω Reverse recovery time: 710ns Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH15N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3 Mounting: THT Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO247-3 On-state resistance: 1.05Ω Reverse recovery time: 250ns Power dissipation: 690W Gate charge: 64nC Polarisation: unipolar Technology: HiPerFET™; Q3-Class Drain current: 15A |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT15N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268 Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO268 On-state resistance: 1.05Ω Power dissipation: 690W Gate charge: 64nC Polarisation: unipolar Drain current: 15A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSEC16-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8Ax2; Ifsm: 40A; TO220AB; tube; 60W Reverse recovery time: 40ns Mounting: THT Max. forward impulse current: 40A Max. forward voltage: 2.94V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Heatsink thickness: 1.14...1.39mm Load current: 8A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSEC16-12AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W Reverse recovery time: 40ns Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 1.96V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 8A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: D2PAK Type of diode: rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP4N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14.2nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 560ns Features of semiconductor devices: standard power mosfet |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK44N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.42Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO264 On-state resistance: 0.4Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA4N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14.2nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 560ns Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH14N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO247-3 On-state resistance: 720mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: TO264 On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN44N80Q3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhancement Reverse recovery time: 300ns Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO247-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of channel: enhancement Reverse recovery time: 145ns Features of semiconductor devices: ultra junction x-class Kind of package: tube |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Gate charge: 37nC Features of semiconductor devices: ultra junction x-class |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP22N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET On-state resistance: 0.145Ω Reverse recovery time: 145ns Mounting: THT Power dissipation: 37W Gate charge: 37nC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 22A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO220AB |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLA100E1200KB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube Mounting: THT Case: TO264 Type of thyristor: thyristor Max. forward impulse current: 1.19kA Gate current: 80mA Max. off-state voltage: 1.2kV Load current: 100A Max. load current: 160A Kind of package: tube |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1972G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Operating temperature: -40...85°C Mounting: THT Relay variant: 1-phase Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 800V AC Case: DIP6 Max. operating current: 250mA Control current max.: 50mA Type of relay: solid state |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH10N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 300W Gate charge: 40nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 10A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP10N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Power dissipation: 300W Gate charge: 40nC Polarisation: unipolar Drain current: 10A |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA10N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Kind of channel: enhancement Mounting: SMD Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Kind of package: tube Case: TO263 Polarisation: unipolar Gate charge: 40nC Drain current: 10A Power dissipation: 300W Drain-source voltage: 800V |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 908 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Technology: Polar™ Drain current: 12A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±30V On-state resistance: 0.5Ω Reverse recovery time: 300ns |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLA50E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT Type of thyristor: standard Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: TO247AD Mounting: THT Max. forward impulse current: 0.65kA Kind of package: tube |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLA50E1200TC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 555A |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CLA50E1200TC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 555A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PD2401 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Case: DIP4 Max. operating current: 1A Control current max.: 100mA Type of relay: solid state |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSS16-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V Power dissipation: 105W Case: TO220AC Mounting: THT Max. off-state voltage: 0.1kV Load current: 16A Max. load current: 35A Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 230A Max. forward voltage: 0.64V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFK80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 80A Power dissipation: 1.3kW Case: TO264 On-state resistance: 77mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 540W Case: ISOPLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN80N60P3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 960W Case: SOT227B On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhancement Reverse recovery time: 250ns Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar3™ Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 80A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CLA80E1200HF | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™ Mounting: THT Max. forward impulse current: 765A Gate current: 38mA Max. off-state voltage: 1.2kV Load current: 80A Max. load current: 126A Kind of package: tube Case: PLUS247™ Type of thyristor: standard |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH10N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 380W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 300ns |
auf Bestellung 287 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH40N50L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ40N50L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT40N50L2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY14N60X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN420N10T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 140ns
Gate charge: 670nC
Category: Transistor modules
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 140ns
Gate charge: 670nC
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH24N50L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ460P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Technology: Polar2™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3P
On-state resistance: 0.27Ω
Reverse recovery time: 400ns
Mounting: THT
Power dissipation: 480W
Gate charge: 48nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Technology: Polar2™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3P
On-state resistance: 0.27Ω
Reverse recovery time: 400ns
Mounting: THT
Power dissipation: 480W
Gate charge: 48nC
Polarisation: unipolar
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN210N30X3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| LF2304NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH64N65X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN140N30P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Electrical mounting: screw
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 200ns
Gate charge: 185nC
Category: Transistor modules
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Electrical mounting: screw
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 200ns
Gate charge: 185nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN132N50P3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 39mΩ
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 250nC
Category: Transistor modules
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 39mΩ
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 250nC
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN210N20P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN44N100P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Category: Transistor modules
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH15N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 760mΩ
Power dissipation: 543W
Gate charge: 97nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 15A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 760mΩ
Power dissipation: 543W
Gate charge: 97nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 15A
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA5N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Power dissipation: 250W
Gate charge: 33.4nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Power dissipation: 250W
Gate charge: 33.4nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 5A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP05N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 30Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 30Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP05N100 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.75A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.75A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA05N100 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 40W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.75A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP05N100M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.7A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
On-state resistance: 17Ω
Reverse recovery time: 710ns
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH15N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 1.05Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 15A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 1.05Ω
Reverse recovery time: 250ns
Power dissipation: 690W
Gate charge: 64nC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 15A
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFT15N100Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 1.05Ω
Power dissipation: 690W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 1.05Ω
Power dissipation: 690W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 15A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEC16-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; Ifsm: 40A; TO220AB; tube; 60W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.39mm
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; Ifsm: 40A; TO220AB; tube; 60W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.39mm
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DSEC16-12AS-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 1.96V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 1.96V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP4N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK44N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK44N80Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFR24N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK24N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
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Im Einkaufswagen
Stück im Wert von UAH
| IXTA4N80P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH24N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH14N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFX34N80 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR44N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX44N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK34N80 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN44N80Q3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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Im Einkaufswagen
Stück im Wert von UAH
| IXFH22N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP22N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Gate charge: 37nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Gate charge: 37nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 223 Stücke:
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| IXFP22N65X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
On-state resistance: 0.145Ω
Reverse recovery time: 145ns
Mounting: THT
Power dissipation: 37W
Gate charge: 37nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
On-state resistance: 0.145Ω
Reverse recovery time: 145ns
Mounting: THT
Power dissipation: 37W
Gate charge: 37nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
auf Bestellung 238 Stücke:
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| CLA100E1200KB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Mounting: THT
Case: TO264
Type of thyristor: thyristor
Max. forward impulse current: 1.19kA
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Mounting: THT
Case: TO264
Type of thyristor: thyristor
Max. forward impulse current: 1.19kA
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
auf Bestellung 31 Stücke:
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| CPC1972G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
Control current max.: 50mA
Type of relay: solid state
auf Bestellung 234 Stücke:
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| IXFH10N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 40nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 40nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
auf Bestellung 251 Stücke:
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| IXFP10N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Power dissipation: 300W
Gate charge: 40nC
Polarisation: unipolar
Drain current: 10A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Power dissipation: 300W
Gate charge: 40nC
Polarisation: unipolar
Drain current: 10A
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA10N80P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Polarisation: unipolar
Gate charge: 40nC
Drain current: 10A
Power dissipation: 300W
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Polarisation: unipolar
Gate charge: 40nC
Drain current: 10A
Power dissipation: 300W
Drain-source voltage: 800V
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SIATR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXTP12N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA50E1200HB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Max. forward impulse current: 0.65kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Max. forward impulse current: 0.65kA
Kind of package: tube
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA50E1200TC-TUB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA50E1200TC-TRL |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PD2401 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
auf Bestellung 39 Stücke:
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| DSS16-01A |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Power dissipation: 105W
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Max. load current: 35A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.64V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Power dissipation: 105W
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Max. load current: 35A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.64V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| IXFK80N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFR80N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN80N60P3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 960W
Case: SOT227B
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 960W
Case: SOT227B
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX80N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA80E1200HF |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™
Mounting: THT
Max. forward impulse current: 765A
Gate current: 38mA
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Kind of package: tube
Case: PLUS247™
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™
Mounting: THT
Max. forward impulse current: 765A
Gate current: 38mA
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Kind of package: tube
Case: PLUS247™
Type of thyristor: standard
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH10N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)