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IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
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2+35.75 EUR
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IXTP3N120 IXTP3N120 IXYS IXT_3N120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
auf Bestellung 263 Stücke:
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10+7.44 EUR
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IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
auf Bestellung 74 Stücke:
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25+2.95 EUR
28+2.65 EUR
31+2.33 EUR
70+2.22 EUR
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IXTP2R4N120P IXTP2R4N120P IXYS IXT_2R4N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
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10+7.26 EUR
11+6.79 EUR
50+5.61 EUR
100+4.96 EUR
250+4.83 EUR
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MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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IXFX80N50Q3 IXFX80N50Q3 IXYS IXFK(X)80N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX80N50P IXFX80N50P IXYS IXFK(X)80N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VBO25-12NO2 VBO25-12NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
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GBO25-12NO1 GBO25-12NO1 IXYS GBO25-12NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
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VBO25-16AO2 VBO25-16AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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GBO25-16NO1 GBO25-16NO1 IXYS GBO25-16NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
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VBO25-16NO2 VBO25-16NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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VBO25-12AO2 VBO25-12AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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IXBH14N300HV IXYS media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
Produkt ist nicht verfügbar
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IXDD609PI IXDD609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 115ns
Kind of output: non-inverting
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37+1.94 EUR
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55+1.32 EUR
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IXDD609CI IXDD609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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26+2.82 EUR
50+2.72 EUR
100+2.55 EUR
250+2.49 EUR
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IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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24+3.06 EUR
32+2.29 EUR
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IXDD609YI IXDD609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 857 Stücke:
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20+3.63 EUR
23+3.19 EUR
50+2.8 EUR
100+2.63 EUR
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IXDD609D2TR IXDD609D2TR IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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24+2.97 EUR
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IXDD609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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PLB190 PLB190 IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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7+11.73 EUR
10+10.18 EUR
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PLB190S PLB190S IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PLB190STR IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1965Y CPC1965Y IXYS CPC1965G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Case: SIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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11+6.55 EUR
25+6.29 EUR
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PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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12+6.21 EUR
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PM1205 PM1205 IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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12+5.99 EUR
15+5.02 EUR
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CPC1945Y CPC1945Y IXYS CPC1945Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Case: SIP4
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Switching method: zero voltage switching
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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PD1201 PD1201 IXYS PD1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Relay variant: 1-phase
Switched voltage: max. 400V AC
auf Bestellung 185 Stücke:
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7+10.27 EUR
10+8.39 EUR
25+7.44 EUR
100+6.85 EUR
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CPC1943G CPC1943G IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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8+9.21 EUR
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PM1204S PM1204S IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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8+9.52 EUR
50+6.23 EUR
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PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
auf Bestellung 83 Stücke:
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7+10.68 EUR
50+7.01 EUR
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CPC1943GS CPC1943GS IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
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LCA210S LCA210S IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
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CPC1967J CPC1967J IXYS CPC1967.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Case: i4-pac
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Max. operating current: 1350mA
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
Type of relay: solid state
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LCA220 LCA220 IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 100mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
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LCA210 LCA210 IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
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IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Kind of package: tube
Mounting: THT
Case: TO264
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10+16.82 EUR
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IXFX74N50P2 IXFX74N50P2 IXYS IXFK(X)74N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 77mΩ
Drain current: 74A
Drain-source voltage: 500V
Power dissipation: 1.4kW
Case: PLUS247™
Produkt ist nicht verfügbar
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IXGH30N60C3D1 IXGH30N60C3D1 IXYS IXGH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
Produkt ist nicht verfügbar
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IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Gate charge: 37nC
Produkt ist nicht verfügbar
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IXYP24N100A4 IXYS littelfuse-discrete-igbts-ixy-24n100a4-datasheet?assetguid=10de694c-f2b8-4ef8-81d5-7cb713d12062 Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 85A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Produkt ist nicht verfügbar
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IXYP24N100C4 IXYS littelfuse-discrete-igbts-ixy-24n100c4-datasheet?assetguid=9e764d41-4809-4a1d-9928-1cb6ca6c9107 Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 132A
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Produkt ist nicht verfügbar
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MCMA35PD1600TB MCMA35PD1600TB IXYS MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 35A
Case: TO240AA
Max. forward voltage: 1.22V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 55A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.87V
Gate current: 78/200mA
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MCD26-08IO1B MCD26-08IO1B IXYS MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
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MCD44-12IO1B MCD44-12IO1B IXYS MCD44-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 49A
Max. load current: 77A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCD95-16IO1B MCD95-16IO1B IXYS MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 180A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
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MCD56-08IO1B MCD56-08IO1B IXYS MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
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MCD72-12IO1B MCD72-12IO1B IXYS MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
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3+39 EUR
10+35.19 EUR
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MCD162-16io1 MCD162-16io1 IXYS MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
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MCD162-18io1 MCD162-18io1 IXYS MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
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1+76.22 EUR
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IXFX120N30P3 IXFX120N30P3 IXYS IXFK(X)120N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N25P IXFX120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N30T IXFX120N30T IXYS IXFK(X)120N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSA1-18D DSA1-18D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 414 Stücke:
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12+6.06 EUR
18+4.15 EUR
100+3.95 EUR
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IXTP26P10T IXTP26P10T IXYS IXT_26P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
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8+8.94 EUR
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IXTY26P10T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
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IXTY26P10T IXTY26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Produkt ist nicht verfügbar
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IXTA26P10T IXTA26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Produkt ist nicht verfügbar
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IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
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IXTP3N120 IXT_3N120.pdf
IXTP3N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
10+7.44 EUR
50+6.65 EUR
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IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.65 EUR
31+2.33 EUR
70+2.22 EUR
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IXTP2R4N120P IXT_2R4N120P.pdf
IXTP2R4N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.26 EUR
11+6.79 EUR
50+5.61 EUR
100+4.96 EUR
250+4.83 EUR
Mindestbestellmenge: 10
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MKI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MKI75-06A7
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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IXFX80N50Q3 IXFK(X)80N50Q3.pdf
IXFX80N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX80N50P IXFK(X)80N50P.pdf
IXFX80N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VBO25-12NO2 VBO25_ser.pdf
VBO25-12NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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GBO25-12NO1 GBO25-12NO1.pdf
GBO25-12NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.41 EUR
Mindestbestellmenge: 7
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VBO25-16AO2 VBO25_ser.pdf
VBO25-16AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+35.04 EUR
5+33.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBO25-16NO1 GBO25-16NO1.pdf
GBO25-16NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
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VBO25-16NO2 VBO25_ser.pdf
VBO25-16NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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VBO25-12AO2 VBO25_ser.pdf
VBO25-12AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXBH14N300HV media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
Produkt ist nicht verfügbar
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IXDD609PI IXDD609CI.pdf
IXDD609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 115ns
Kind of output: non-inverting
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
50+1.43 EUR
55+1.32 EUR
Mindestbestellmenge: 37
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IXDD609CI IXDD609CI.pdf
IXDD609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
26+2.82 EUR
50+2.72 EUR
100+2.55 EUR
250+2.49 EUR
Mindestbestellmenge: 20
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IXDD609SI IXDD609CI.pdf
IXDD609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
32+2.29 EUR
33+2.22 EUR
Mindestbestellmenge: 24
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IXDD609YI IXDD609CI.pdf
IXDD609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
23+3.19 EUR
50+2.8 EUR
100+2.63 EUR
250+2.6 EUR
Mindestbestellmenge: 20
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IXDD609D2TR IXDD609CI.pdf
IXDD609D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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IXDD609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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PLB190 PLB190.pdf
PLB190
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.73 EUR
10+10.18 EUR
50+8.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PLB190S PLB190.pdf
PLB190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.67 EUR
Mindestbestellmenge: 7
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PLB190STR PLB190.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1965Y CPC1965G.pdf
CPC1965Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Case: SIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.55 EUR
25+6.29 EUR
Mindestbestellmenge: 11
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PM1204 PM1204.pdf
PM1204
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.48 EUR
12+6.21 EUR
50+5.18 EUR
100+4.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PM1205 PM1205.pdf
PM1205
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
15+5.02 EUR
100+4.89 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CPC1945Y CPC1945Y.pdf
CPC1945Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Case: SIP4
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Switching method: zero voltage switching
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PD1201 PD1201.pdf
PD1201
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Relay variant: 1-phase
Switched voltage: max. 400V AC
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
10+8.39 EUR
25+7.44 EUR
100+6.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1943G CPC1943.pdf
CPC1943G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PM1204S PM1204.pdf
PM1204S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
50+6.23 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PM1206 PM1206.pdf
PM1206
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.68 EUR
50+7.01 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1943GS CPC1943.pdf
CPC1943GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.5A
Control current max.: 100mA
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
LCA210S LCA210.pdf
LCA210S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
50+4.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
CPC1967J CPC1967.pdf
CPC1967J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Case: i4-pac
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Max. operating current: 1350mA
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
Type of relay: solid state
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.82 EUR
25+18.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
LCA220 LCA220.pdf
LCA220
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 100mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
13+5.83 EUR
Mindestbestellmenge: 10
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LCA210 LCA210.pdf
LCA210
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 85mA
Control current max.: 100mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Type of relay: solid state
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
Mindestbestellmenge: 18
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IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Kind of package: tube
Mounting: THT
Case: TO264
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.76 EUR
10+16.82 EUR
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IXFX74N50P2 IXFK(X)74N50P2.pdf
IXFX74N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 165nC
On-state resistance: 77mΩ
Drain current: 74A
Drain-source voltage: 500V
Power dissipation: 1.4kW
Case: PLUS247™
Produkt ist nicht verfügbar
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IXGH30N60C3D1 IXGH30N60C3D1.pdf
IXGH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
Produkt ist nicht verfügbar
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Gate charge: 37nC
Produkt ist nicht verfügbar
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IXYP24N100A4 littelfuse-discrete-igbts-ixy-24n100a4-datasheet?assetguid=10de694c-f2b8-4ef8-81d5-7cb713d12062
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 85A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Produkt ist nicht verfügbar
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IXYP24N100C4 littelfuse-discrete-igbts-ixy-24n100c4-datasheet?assetguid=9e764d41-4809-4a1d-9928-1cb6ca6c9107
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 132A
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Produkt ist nicht verfügbar
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MCMA35PD1600TB MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA35PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 35A
Case: TO240AA
Max. forward voltage: 1.22V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 55A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.87V
Gate current: 78/200mA
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.74 EUR
Mindestbestellmenge: 3
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MCD26-08IO1B MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCD26-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MCD44-12IO1B MCD44-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD44-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 49A
Max. load current: 77A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCD95-16IO1B MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD95-16IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 180A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.27 EUR
Mindestbestellmenge: 2
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MCD56-08IO1B MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD56-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.15 EUR
10+28.06 EUR
Mindestbestellmenge: 3
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MCD72-12IO1B MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD72-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.14 EUR
3+39 EUR
10+35.19 EUR
Mindestbestellmenge: 2
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MCD162-16io1 MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf
MCD162-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+81.98 EUR
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MCD162-18io1 MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD162-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+76.22 EUR
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IXFX120N30P3 IXFK(X)120N30P3.pdf
IXFX120N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N25P IXFK(X)120N25P.pdf
IXFX120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX120N30T IXFK(X)120N30T.pdf
IXFX120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSA1-18D DSA1-18D.pdf
DSA1-18D
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
18+4.15 EUR
100+3.95 EUR
Mindestbestellmenge: 12
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IXTP26P10T IXT_26P10T.pdf
IXTP26P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXTY26P10T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTY26P10T IXT_26P10T.pdf
IXTY26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Produkt ist nicht verfügbar
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IXTA26P10T IXT_26P10T.pdf
IXTA26P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Produkt ist nicht verfügbar
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