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IXTA8N65X2 IXTA8N65X2 IXYS IXT_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXXH110N65C4 IXXH110N65C4 IXYS IXXH110N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 167nC
Pulsed collector current: 600A
Turn-on time: 71ns
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IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO263
Mounting: SMD
Kind of package: tube
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 19nC
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IXYP15N65C3 IXYP15N65C3 IXYS IXYP15N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
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IXYP15N65C3D1 IXYP15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 102ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
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IXYP15N65C3D1M IXYP15N65C3D1M IXYS IXYP15N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
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DSS16-0045A DSS16-0045A IXYS DSS16-0045A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Max. load current: 35A
Power dissipation: 105W
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DSS16-0045AS-TUB IXYS DSS16-0045A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
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IXFA20N50P3 IXFA20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH20N50P3 IXFH20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFP20N50P3M IXFP20N50P3M IXYS IXFP20N50P3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFQ20N50P3 IXFQ20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA4N65X2 IXTA4N65X2 IXYS IXT_4N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
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IXTY4N65X2 IXTY4N65X2 IXYS IXT_4N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
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IXKC40N60C IXYS description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
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IXKN40N60C IXKN40N60C IXYS IXKN40N60C.pdf Category: Transistor modules
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Type of semiconductor module: MOSFET transistor
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IXKR40N60C IXKR40N60C IXYS IXKR40N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 650ns
Features of semiconductor devices: super junction coolmos
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CPC1008N CPC1008N IXYS littelfuse-integrated-circuits-cpc1008n-datasheet?assetguid=55b0a818-3bfd-483f-9372-c078b9202476 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 150mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
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CPC1008NTR CPC1008NTR IXYS CPC1008N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 150mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
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IXFP5N100P IXFP5N100P IXYS IXFA(H,P)5N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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CPC1017N CPC1017N IXYS cpc1017n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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IXXH30N60B3 IXXH30N60B3 IXYS IXXH30N60B3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 115A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247AD
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
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CPC1035N CPC1035N IXYS cpc1035n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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CPC1035NTR CPC1035NTR IXYS CPC1035N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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IXTK90P20P IXTK90P20P IXYS IXTK90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
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IXGX120N120A3 IXGX120N120A3 IXYS IXGK(x)120N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 105ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1365ns
Gate-emitter voltage: ±20V
Collector current: 120A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 830W
Gate charge: 420nC
Technology: GenX3™; PT
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IXGX120N120B3 IXGX120N120B3 IXYS IXGK(x)120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: PLUS247™
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 370A
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IXGX120N60A3 IXGX120N60A3 IXYS IXGX120N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 123ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 830ns
Gate-emitter voltage: ±20V
Collector current: 120A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 780W
Gate charge: 450nC
Technology: GenX3™; PT
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IXYH24N90C3 IXYH24N90C3 IXYS IXYH24N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
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IXYH24N90C3D1 IXYH24N90C3D1 IXYS IXYH24N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
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IXTA20N65X IXTA20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
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IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
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IXTH20N65X IXTH20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
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IXTH20N65X2 IXTH20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 27nC
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IXTP20N65X IXTP20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
Produkt ist nicht verfügbar
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IXTP20N65X2 IXTP20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 27nC
Produkt ist nicht verfügbar
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IXYH50N65C3H1 IXYH50N65C3H1 IXYS IXYH50N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
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IXFR15N100Q3 IXFR15N100Q3 IXYS IXFR15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXFA7N80P IXFA7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
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IXFP7N80P IXFP7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
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IXFA24N60X IXFA24N60X IXYS IXFA(H,P,Q)24N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Gate charge: 47nC
Features of semiconductor devices: ultra junction x-class
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IXFA12N65X2 IXFA12N65X2 IXYS IXF_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXFP12N65X2 IXFP12N65X2 IXYS IXF_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
auf Bestellung 214 Stücke:
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50+3.69 EUR
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IXFP12N65X2M IXFP12N65X2M IXYS IXFP12N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXTA12N65X2 IXTA12N65X2 IXYS IXT_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
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IXTH12N65X2 IXTH12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
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IXTP12N65X2 IXTP12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP12N65X2M IXTP12N65X2M IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 17.7nC
Produkt ist nicht verfügbar
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IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Collector-emitter voltage: 650V
Gate charge: 34nC
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate-emitter voltage: ±20V
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IXFH30N60P IXFH30N60P IXYS IXFH(T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXFH30N60X IXFH30N60X IXYS IXFH(T,Q)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
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IXFP30N60X IXFP30N60X IXYS IXFA(P)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
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IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
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IXKH30N60C5 IXKH30N60C5 IXYS IXKH30N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Gate charge: 53nC
Features of semiconductor devices: super junction coolmos
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IXTH30N60L2 IXTH30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
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IXFA18N60X IXFA18N60X IXYS IXFA(H,P)18N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
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23+3.76 EUR
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IXFH18N60P IXFH18N60P IXYS IXFH18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Produkt ist nicht verfügbar
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IXTQ18N60P IXTQ18N60P IXYS IXTQ18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
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IXBH10N170 IXBH10N170 IXYS IXBH(T)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 30nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 63ns
Kind of package: tube
Case: TO247-3
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
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IXBH10N300HV IXBH10N300HV IXYS IXBA(H)10N300HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 180W
Gate charge: 46nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 88A
Type of transistor: IGBT
Turn-on time: 805ns
Kind of package: tube
Case: TO247HV
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
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IXTA8N65X2 IXT_8N65X2.pdf
IXTA8N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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26+3.33 EUR
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IXXH110N65C4 IXXH110N65C4.pdf
IXXH110N65C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 167nC
Pulsed collector current: 600A
Turn-on time: 71ns
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60+12.26 EUR
120+12.02 EUR
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IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO263
Mounting: SMD
Kind of package: tube
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 200W
Gate charge: 19nC
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25+3.44 EUR
29+3.01 EUR
50+2.73 EUR
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IXYP15N65C3 IXYP15N65C3.pdf
IXYP15N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
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IXYP15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYP15N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 102ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
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IXYP15N65C3D1M IXYP15N65C3D1M.pdf
IXYP15N65C3D1M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-off time: 122ns
Technology: GenX3™; Planar; XPT™
Turn-on time: 36ns
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DSS16-0045A DSS16-0045A.pdf
DSS16-0045A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Max. load current: 35A
Power dissipation: 105W
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DSS16-0045AS-TUB DSS16-0045A.pdf
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
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IXFA20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFA20N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFH20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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11+8.2 EUR
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IXFP20N50P3M IXFP20N50P3M.pdf
IXFP20N50P3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFQ20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFQ20N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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12+7.52 EUR
13+6.56 EUR
30+5.58 EUR
60+4.99 EUR
120+4.74 EUR
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IXTA4N65X2 IXT_4N65X2.pdf
IXTA4N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
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IXTY4N65X2 IXT_4N65X2.pdf
IXTY4N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
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4+21.28 EUR
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IXKC40N60C description
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
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IXKN40N60C IXKN40N60C.pdf
IXKN40N60C
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXKR40N60C IXKR40N60C.pdf
IXKR40N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 650ns
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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CPC1008N littelfuse-integrated-circuits-cpc1008n-datasheet?assetguid=55b0a818-3bfd-483f-9372-c078b9202476
CPC1008N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 150mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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CPC1008NTR CPC1008N.pdf
CPC1008NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 150mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXFP5N100P IXFA(H,P)5N100P.pdf
IXFP5N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
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10+8.73 EUR
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CPC1017N cpc1017n.pdf
CPC1017N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 1929 Stücke:
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27+3.24 EUR
30+2.88 EUR
100+2.69 EUR
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IXXH30N60B3 IXXH30N60B3-DTE.pdf
IXXH30N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 115A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247AD
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 224 Stücke:
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10+8.75 EUR
11+7.88 EUR
13+6.96 EUR
30+6.25 EUR
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CPC1035N cpc1035n.pdf
CPC1035N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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14+6.26 EUR
17+5.07 EUR
100+4.74 EUR
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CPC1035NTR CPC1035N.pdf
CPC1035NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXTK90P20P IXTK90P20P.pdf
IXTK90P20P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Produkt ist nicht verfügbar
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IXGX120N120A3 IXGK(x)120N120A3.pdf
IXGX120N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 105ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1365ns
Gate-emitter voltage: ±20V
Collector current: 120A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 830W
Gate charge: 420nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGX120N120B3 IXGK(x)120N120B3.pdf
IXGX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: PLUS247™
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 370A
Produkt ist nicht verfügbar
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IXGX120N60A3 IXGX120N60A3.pdf
IXGX120N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Pulsed collector current: 600A
Type of transistor: IGBT
Turn-on time: 123ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 830ns
Gate-emitter voltage: ±20V
Collector current: 120A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 780W
Gate charge: 450nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXYH24N90C3 IXYH24N90C3.pdf
IXYH24N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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IXYH24N90C3D1 IXYH24N90C3D1.pdf
IXYH24N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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IXTA20N65X IXTA(H,P)20N65X.pdf
IXTA20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
Produkt ist nicht verfügbar
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IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
auf Bestellung 10 Stücke:
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10+8.51 EUR
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IXTH20N65X IXTA(H,P)20N65X.pdf
IXTH20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
auf Bestellung 246 Stücke:
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7+12.38 EUR
10+11 EUR
30+10.16 EUR
120+9.07 EUR
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IXTH20N65X2 IXTA(H,P)20N65X2.pdf
IXTH20N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 27nC
Produkt ist nicht verfügbar
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IXTP20N65X IXTA(H,P)20N65X.pdf
IXTP20N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 35nC
Produkt ist nicht verfügbar
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IXTP20N65X2 IXTA(H,P)20N65X2.pdf
IXTP20N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Gate charge: 27nC
Produkt ist nicht verfügbar
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IXYH50N65C3H1 IXYH50N65C3H1.pdf
IXYH50N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
auf Bestellung 77 Stücke:
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6+14.79 EUR
10+12.22 EUR
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IXFR15N100Q3 IXFR15N100Q3.pdf
IXFR15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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4+27.11 EUR
10+23.42 EUR
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IXFA7N80P IXFA7N80P_IXFP7N80P.pdf
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
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IXFP7N80P IXFA7N80P_IXFP7N80P.pdf
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
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IXFA24N60X IXFA(H,P,Q)24N60X.pdf
IXFA24N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Gate charge: 47nC
Features of semiconductor devices: ultra junction x-class
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IXFA12N65X2 IXF_12N65X2.pdf
IXFA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXFP12N65X2 IXF_12N65X2.pdf
IXFP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXFP12N65X2M IXFP12N65X2M.pdf
IXFP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXTA12N65X2 IXT_12N65X2.pdf
IXTA12N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH12N65X2 IXT_12N65X2.pdf
IXTH12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Gate charge: 17.7nC
Produkt ist nicht verfügbar
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IXTP12N65X2 IXT_12N65X2.pdf
IXTP12N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTP12N65X2M littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTP12N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 17.7nC
Produkt ist nicht verfügbar
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IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Collector-emitter voltage: 650V
Gate charge: 34nC
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXFH30N60P IXFH(T,V)30N60P_S.pdf
IXFH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
Produkt ist nicht verfügbar
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IXFH30N60X IXFH(T,Q)30N60X.pdf
IXFH30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFP30N60X IXFA(P)30N60X.pdf
IXFP30N60X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
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IXKH30N60C5 IXKH30N60C5.pdf
IXKH30N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Gate charge: 53nC
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTH30N60L2 IXT_30N60L2.pdf
IXTH30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXFA18N60X IXFA(H,P)18N60X.pdf
IXFA18N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Features of semiconductor devices: ultra junction x-class
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IXFH18N60P IXFH18N60P.pdf
IXFH18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Produkt ist nicht verfügbar
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IXTQ18N60P IXTQ18N60P.pdf
IXTQ18N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXBH10N170 IXBH(T)10N170.pdf
IXBH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 30nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 63ns
Kind of package: tube
Case: TO247-3
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
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IXBH10N300HV IXBA(H)10N300HV.pdf
IXBH10N300HV
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 180W
Gate charge: 46nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 88A
Type of transistor: IGBT
Turn-on time: 805ns
Kind of package: tube
Case: TO247HV
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
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