 
IXTP24N65X2 Ixys Corporation
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 22+ | 6.7 EUR | 
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Technische Details IXTP24N65X2 Ixys Corporation
Description: MOSFET N-CH 650V 24A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V. 
Weitere Produktangebote IXTP24N65X2 nach Preis ab 4.16 EUR bis 10.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
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|   | IXTP24N65X2 | Hersteller : IXYS |  Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke | auf Bestellung 31 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IXTP24N65X2 | Hersteller : IXYS |  Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class | auf Bestellung 31 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | IXTP24N65X2 | Hersteller : IXYS |  Description: MOSFET N-CH 650V 24A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V | auf Bestellung 1055 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IXTP24N65X2 | Hersteller : Littelfuse |  Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||
|   | IXTP24N65X2 | Hersteller : IXYS |  MOSFETs TO220  650V   24A N-CH X2CLASS | Produkt ist nicht verfügbar |